Spec. No. : C103J3 Issued Date : 2017.07.20 Revised Date : Page No. : 1/ 9 CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTE020N06KJ3 BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=8A 60V 24.5A 8.5A 13.1 mΩ(typ) Features • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • ESD protected gate • RoHS compliant package Symbol Outline MTE020N06KJ3 TO-252(DPAK) G D S G：Gate D：Drain S：Source Ordering Information Device Package TO-252 MTE020N06KJ3-0-T3-G (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name MTE020N06KJ3 CYStek Product Specification Spec. No. : C103J3 Issued Date : 2017.07.20 Revised Date : Page No. : 2/ 9 CYStech Electronics Corp. Absolute Maximum Ratings (TC=25°C) Parameter Drain-Source Voltage (Note 1) Gate-Source Voltage Continuous Drain Current @TC=25°C, VGS=10V Continuous Drain Current @TC=100°C, VGS=10V Continuous Drain Current @TA=25°C, VGS=10V Continuous Drain Current @TA=70°C, VGS=10V Pulsed Drain Current Single Pulse Avalanche Current Single Pulse Avalanche Energy @ L=0.5mH, ID=20 Amps, VDD=30V Repetitive Avalanche Energy TC=25°C TC=100°C Power Dissipation TA=25°C TA=70°C Operating Junction and Storage Temperature Symbol Limits VDS VGS IDM IAS 60 ±20 24.5* 15.5* 8.5 6.8 98* 20 EAS 100 (Note 3) EAR (Note 1) PD 2.1 21 8.4 2.5 1.6 -55~+150 (Note 1) ID (Note 1) (Note 2) IDSM (Note 2) (Note 3) (Note 4) (Note 1) (Note 2) PDSM (Note 2) Tj, Tstg Unit V A mJ W *Drain current limited by maximum junction temperature Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max (Note 2) Symbol RθJC RθJA Value 6 50 Unit °C/W Note : 1.The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. 2. The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150 °C. The value in any given application depends on the user’s specific board design. 3. Pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and low duty cycles to keep initial TJ=25°C. 4. 100% tested by condition of VDD=15V, ID=2.4A, L=1mH, VGS=10V. MTE020N06KJ3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C103J3 Issued Date : 2017.07.20 Revised Date : Page No. : 3/ 9 Characteristics (Tj=25°C, unless otherwise specified) Symbol Static BVDSS ∆BVDSS/∆Tj VGS(th) *GFS IGSS IDSS Min. Typ. Max. Unit 60 2 - 60 8.4 13.1 4 ±10 1 5 16.8 V mV/°C V S 15.3 3 5.5 10.6 18.2 25 9.4 654 137 75 - 0.8 14.6 9.5 24.5 98 1.2 - *RDS(ON) Dynamic *Qg *Qgs *Qgd *td(ON) *tr *td(OFF) *tf Ciss Coss Crss Source-Drain Diode *IS *ISM *VSD *trr *Qrr - Test Conditions mΩ VGS=0V, ID=250μA Reference to 25°C, ID=250μA VDS = 10V, ID=1mA VDS =10V, ID=5A VGS=±16V VDS =60V, VGS =0V VDS =48V, VGS =0V, Tj=55°C VGS =10V, ID=8A nC VDD=48V, ID=8A,VGS=10V ns VDD=30V, ID=8A, VGS=10V, RG=1Ω pF VGS=0V, VDS=20V, f=1MHz μA A V ns nC IS=8A, VGS=0V VGS=0V, IF=8A, dIF/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% Recommended soldering footprint MTE020N06KJ3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C103J3 Issued Date : 2017.07.20 Revised Date : Page No. : 4/ 9 Typical Characteristics Brekdown Voltage vs Ambient Temperature Typical Output Characteristics 1.4 90 ID, Drain Current(A) 80 70 BVDSS, Normalized Drain-Source Breakdown Voltage 10V,9V,8V,7V 6V 60 50 5V 40 30 4.5V 20 1.2 1 0.8 ID=250μA, VGS=0V 0.6 VGS=4 V 10 0.4 0 0 2 4 6 8 VDS, Drain-Source Voltage(V) -75 -50 -25 10 Static Drain-Source On-State resistance vs Drain Current Reverse Drain Current vs Source-Drain Voltage 1.2 VSD, Source-Drain Voltage(V) R DS(ON) , Static Drain-Source On-State Resistance(mΩ) 100 VGS=7V 10 VGS=10V 1 1.0 Tj=25°C 0.8 0.6 Tj=150°C 0.4 0.2 0.1 1 10 ID, Drain Current(A) 100 0 4 8 12 16 IDR , Reverse Drain Current(A) 20 Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage 2.4 100 90 ID=8A 80 R DS(ON) , Normalized Static DrainSource On-State Resistance R DS(ON) , Static Drain-Source OnState Resistance(mΩ) 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) 70 60 50 40 30 20 10 0 0 MTE020N06KJ3 2 4 6 8 VGS, Gate-Source Voltage(V) 10 2.0 VGS=10V, ID=8A RDS(ON) @Tj=25°C : 13.1mΩ typ. 1.6 1.2 0.8 0.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) CYStek Product Specification Spec. No. : C103J3 Issued Date : 2017.07.20 Revised Date : Page No. : 5/ 9 CYStech Electronics Corp. Typical Characteristics(Cont.) Threshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage 1.4 VGS(th), Normalized Threshold Voltage Capacitance---(pF) 10000 Ciss 1000 C oss 100 Crss f=1MHz 10 0 5 10 15 20 25 VDS, Drain-Source Voltage(V) 1.2 ID=1mA 1.0 0.8 0.6 ID=250μA 0.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) 30 Forward Transfer Admittance vs Drain Current Gate Charge Characteristics 10 ID=8A VGS, Gate-Source Voltage(V) GFS , Forward Transfer Admittance(S) 100 10 1 VDS=10V Pulsed Ta=25°C 0.1 8 VDS=30V 6 4 VDS=48V 2 0 0.01 0.001 0.01 0.1 1 ID, Drain Current(A) 10 0 100 4 6 8 10 12 14 16 Qg, Total Gate Charge(nC) 18 20 Maximum Drain Current vs Case Temperature Maximum Safe Operating Area 30 1000 100μs 10μs ID, Maximum Drain Current(A) 1ms ID, Drain Current(A) 2 RDS(ON) Limited 100 10 10ms TC=25°C, Tj(max)=150°C VGS=10V,RθJC=6°C/W Single Pulse 1 100ms DC 25 20 15 10 Tj(max)=150°C,RθJC=6°C/W, VGS=10V, Single Pulse 5 0 0.1 0.1 MTE020N06KJ3 1 10 VDS, Drain-Source Voltage(V) 100 25 50 75 100 125 150 TC , Case Temperature(°C) 175 CYStek Product Specification Spec. No. : C103J3 Issued Date : 2017.07.20 Revised Date : Page No. : 6/ 9 CYStech Electronics Corp. Typical Characteristics(Cont.) Typical Transfer Characteristics Single Pulse Power Rating, Junction to Case 90 3000 VDS=10V 80 70 ID, Drain Current (A) TJ(MAX) =150°C TC=25°C RθJC=6°C/W 2500 Power (W) 60 50 40 30 2000 1500 1000 20 500 10 0 0 2 4 6 8 VGS, Gate-Source Voltage(V) 10 0 1E-05 0.0001 0.001 0.01 0.1 Pulse Width(s) 1 10 Transient Thermal Response Curves 1 r (t), Normalized Transient Thermal Resistance D=0.5 0.2 0.1 0.1 1.RθJC(t)=r(t)*RθJC 2.Duty Factor, D=t1/t2 3.TJM-TC=PDM*RθJC(t) 4.RθJC=6°C/W 0.05 0.02 0.01 0.01 0.001 1.E-05 MTE020N06KJ3 Single Pulse 1.E-04 1.E-03 1.E-02 1.E-01 t1, Square Wave Pulse Duration(s) 1.E+00 1.E+01 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C103J3 Issued Date : 2017.07.20 Revised Date : Page No. : 7/ 9 Reel Dimension Carrier Tape Dimension MTE020N06KJ3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C103J3 Issued Date : 2017.07.20 Revised Date : Page No. : 8/ 9 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTE020N06KJ3 CYStek Product Specification Spec. No. : C103J3 Issued Date : 2017.07.20 Revised Date : Page No. : 9/ 9 CYStech Electronics Corp. TO-252 Dimension Marking: 4 Device Name E020 N06K Date Code □□□□ 1 3-Lead TO-252 Plastic Surface Mount Package CYStek Package Code: J3 Inches Min. Max. 0.087 0.094 0.000 0.005 0.039 0.048 0.026 0.034 0.026 0.034 0.018 0.023 0.018 0.023 0.256 0.264 0.201 0.215 0.236 0.244 DIM A A1 B b b1 C C1 D D1 E Millimeters Min. Max. 2.200 2.400 0.000 0.127 0.990 1.210 0.660 0.860 0.660 0.860 0.460 0.580 0.460 0.580 6.500 6.700 5.100 5.460 6.000 6.200 2 3 Style: Pin 1.Gate 2.Drain 3.Source 4.Drain DIM e e1 H K L L1 L2 L3 P V Inches Min. Max. 0.086 0.094 0.172 0.188 0.163 REF 0.190 REF 0.386 0.409 0.114 REF 0.055 0.067 0.024 0.039 0.026 REF 0.211 REF Millimeters Min. Max. 2.186 2.386 4.372 4.772 4.140 REF 4.830 REF 9.800 10.400 2.900 REF 1.400 1.700 0.600 1.000 0.650 REF 5.350 REF Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead : Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTE020N06KJ3 CYStek Product Specification