NTE NTE336 Silicon npn rf power transistor designed for power amplifier Datasheet

NTE335 & NTE336
Silicon NPN Transistor
RF Power Output
Description:
The NTE335 and NTE336 are silicon NPN RF power transistors designed for power amplifier applications
in industrial, commercial and amateur radio equipment to 30MHz.
Features:
D Specified 12.5V, 30MHz Characteristics:
Output Power = 80W
Minimum Gain = 12dB
Efficiency
= 50%
D Available in Two Different Package Designs:
NTE335 (W52N, Flange Mount)
NTE336 (T93D, Stud Mount)
Absolute Maximum Ratings:
Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V
Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V
Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A
Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250W
Derate above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.43W/°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65° to +150°C
Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.7°C/W
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max Unit
V(BR)CEO IC = 100mA, IB = 0
18
−
−
V
V(BR)CES IC = 50mA, VBE = 0
36
−
−
V
V(BR)EBO IE = 10mA, IC = 0
4
−
−
V
OFF Characteristics
Collector−Emitter Breakdown Voltage
Emitter−Base Breakdown Voltage
Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max Unit
ON Characteristics
DC Current Gain
hFE
IC = 5A, VCE = 5V
10
−
150
Cob
VCB = 15V, IE = 0,
f = 1MHz
−
−
250
pF
Gpe
VCC = 12.5V,
POUT = 80W
80W,
f = 30MHz
12
−
−
dB
50
−
−
%
−
.938 − j.341
−
Ω
Ω
Dynamic Characteristics
Output Capacitance
Functional Tests
Common−Emitter Amplifier Power Gain
Collector Efficiency
η
Series Equivalent Input Impedance
Zin
Series Equivalent Output Impedance
Zout
−
1.16 − j.201
−
Parallel Equivalent Input Impedance
−
−
1.06Ω
1817pF
−
Parallel Equivalent Output Impedance
−
−
1.19Ω
777pF
−
NTE335
.725 (18.42)
E
NTE336
.127 (3.17) Dia
(2 Holes)
C
C
.250
(6.35)
B
1.040 (26.4) Max
.520 (13.2)
.230
(5.84)
E
.225 (5.72)
E
E
1.061 (25.95)
B
Ceramic Cap
.480 (12.1) Dia
.100 (2.54)
.385
(9.8)
Dia
.005 (0.15)
.260
(6.6)
.168 (4.27)
.065
(1.68)
.975 (24.77)
.095 (2.42)
8−32−NC−3A
Wrench Flat
.750
(19.05)