CHA7215 RoHS COMPLIANT X-band High Power Amplifier GaAs Monolithic Microwave IC Description VG1R VD1 VG2R ● ● The CHA7215 is a monolithic three-stage GaAs high power amplifier designed for X band applications. The HPA provides typically 9W output power associated to 35% power added efficiency at 4dBc and a high robustness on mismatch load. This device is manufactured using 0.25 µm Power pHEMT process, including, via holes through the substrate and air bridges. VD2 VG3R ● ● VD3 ● ● ● ● OUT IN ● ● VD1 ● ● VD2 VG3R VD3 Output Power versus Frequency @Pin=19dBm 41 40,5 40 O u tp u t P o w e r (d B m ) Main Features 0.25 µm Power pHEMT Technology Frequency band: 8.5 – 11.5GHz Output power: 39.5dBm at saturation High linear gain: 28dB Power added efficiency: 34% @4dBc Quiescent bias point: Vd=8V, Id=2.3A Chip size: 5 x 3.31 x 0.07mm 39,5 39 38,5 38 37,5 37 36,5 Temp=-40°C 36 Temp=+20°C 35,5 Temp=+80°C 35 8 8,5 9 9,5 10 10,5 11 11,5 Frequency (GHz) Main Characteristics Vd=8V, Id (Quiescent) = 2.3A, Drain Pulse width = 25µs, Duty cycle = 10% Symbol Top Fop PAE_4dBc Psat G Parameter Operating temperature range Operating frequency range Min -40 8.5 Typ Max +80 11.5 Unit °C GHz Power added efficiency @4dBc @ 20°C 34 % Saturated output power @ 20°C 39.5 dBm Small signal gain @ 20°C 25 28 31 dB ESD Protections: Electrostatic discharge sensitive device. Observe handling precautions! Ref : DSCHA72159287 - 14 Oct 09 1/8 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 12 X-band High Power Amplifier CHA7215 Electrical Characteristics on test fixture Tamb = 20°C, Vd=8V, Id (Quiescent) = 2.3A, Drain Pu lse width = 25µs, Duty cycle = 10% Symbol Parameter Min Typ Max Unit Fop Operating frequency 8.5 11.5 GHz G Small signal gain 25 28 31 dB Small signal gain variation versus -0.05 dB/°C G_T temperature RLin Input Return Loss 10 dB RLout Output Return Loss 12 dB Psat Saturated output power 39.5 dBm Saturated output power variation versus -0.01 dB/°C Psat_T temperature PAE_4dBc Power added efficiency @4dBc 34 % Id_4dBc Supply drain current @ 4dBc 3.3 4.4 A Vd1, Vd2, Vd3 Drain supply voltage (2) 8 V Id Supply quiescent current (1) 2.3 A Vg1, Vg2, Vg3 Gate supply voltage -2.2 V (1) Parameter can be adjusted by tuning of Vg. (2) 0.5V variation on Vd leads to around 0.4dB variation of the output power (impact on robustness see Maximum ratings) Absolute Maximum Ratings (1) Tamb = 20°C Symbol Parameter Values Unit Cmp Compression level (2) 6 dBc Vd Supply voltage with RF input power 9 V Vd Supply voltage without RF input power 10 V Id Supply quiescent current 3 A Id_sat Supply current in saturation 4.8 A Vg Supply voltage -1.1 V Tj Maximum junction temperature 175 °C Tstg Storage temperature range -55 to +125 °C Top Operating temperature range -40 to +80 °C (1) Operation of this device above anyone of these parameters may cause permanent damage. (2) For higher compression the level limit can be increased by decreasing the voltage Vd using the rate 0.5 V / dBc Ref : DSCHA72159287 - 14 Oct 09 2/8 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice X-band High Power Amplifier CHA7215 Typical measured characteristics Measurements on Jig: Vd=8V, Id (Quiescent) = 2.3A, Drain Pulse width = 25µs, Duty cycle = 10% 38 36 Temp=-40°C Temp=+20°C Temp=+80°C Linear Gain (dB) 34 32 30 28 26 24 22 20 18 8 8,5 9 9,5 10 10,5 11 11,5 12 Frequency (GHz) Linear gain versus frequency and temperature Linear Gain (dB) & Output Power (dBm) @10GHz 42 40 38 36 Pout 34 32 30 28 Gain 26 24 22 20 18 16 0 Temp=-40°C Temp=+20°C Temp=+80°C Temp=-40°C Temp=+20°C Temp=+80°C 2 4 6 8 10 12 14 16 18 20 Input Power (dBm) Linear Gain and Output Power @Freq=10GHz versus input power and temperature Ref : DSCHA72159287 - 14 Oct 09 3/8 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice X-band High Power Amplifier CHA7215 41 Output Power @ Pin=17dBm (dBm) 40,5 40 39,5 39 38,5 38 37,5 37 Temp=-40°C Temp=+20°C Temp=+80°C 36,5 36 35,5 35 34,5 34 8 8,5 9 9,5 10 10,5 11 11,5 12 Frequency (GHz) Output Power @Pin=17dBm versus frequency and temperature 5 4,5 ID @Pin=17dBm (A) 4 3,5 3 2,5 2 1,5 1 Temp=-40°C Temp=+20°C Temp=+80°C 0,5 0 8 8,5 9 9,5 10 10,5 11 11,5 12 Frequency (GHz) Id @Pin=17dBm versus frequency and temperature Ref : DSCHA72159287 - 14 Oct 09 4/8 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice X-band High Power Amplifier CHA7215 50 45 PAE @Pin=17dBm (%) 40 35 30 25 20 15 10 Temp=-40°C Temp=+20°C Temp=+80°C 5 0 8 8,5 9 9,5 10 10,5 11 11,5 12 Frequency (GHz) PAE @Pin=17dBm versus frequency and temperature Ref : DSCHA72159287 - 14 Oct 09 5/8 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice X-band High Power Amplifier CHA7215 4 845 4 500 2 440 2 010 210 410 610 810 1 010 1 210 1 410 1 610 Chip Mechanical Data and Pin references 3 205 3 205 1 855 1 655 3 4 5 6 7 8 9 10 11 12 13 14 1 855 1 655 15 1 4 885 120 3 310 2 28 27 26 25 24 23 22 21 20 19 18 17 16 000 4 845 4 500 210 410 610 810 1 010 1 210 1 410 1 610 1 810 2 010 000 105 2 440 105 5 000 Chip thickness = 70µm +/- 10 µm RF pads (1, 15) = (122 x 200) µm² DC pads (2 to 12, 14, 16, 18 to 28) = (100 x 100) µm² DC pads (13, 17) = (186 x 100) µm² Pin number 1, 15 3, 8, 12, 18 4, 6, 10, 14, 16, 20, 24, 26 5, 9, 13, 17, 21, 25 2, 7, 11, 19, 22, 23, 27, 28 Ref : DSCHA72159287 - 14 Oct 09 Pin name IN / OUT GiR M Di Gi / GiR 6/8 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Description Input / Output RF Gate supply voltage Ground (Not connected) Drain supply voltage Not connected Specifications subject to change without notice X-band High Power Amplifier CHA7215 Bonding recommendations Port IN OUT Connection External capacitor Inductance (Lbonding) = 0.35nH 2 gold wires with diameter of 25 µm (600µm max) Inductance (Lbonding) = 0.35nH 2 gold wires with diameter of 25 µm (600µm max) Vg Inductance ≤ 1nH Vd Inductance ≤ 1nH C1 ~ 100pF C2 ~ 10nF C1 ~ 100pF Assembly recommendations in test fixture Vg Vd Vd Vg C1=100pF C2=10nF Non capacitive pad Recommended ESD management Refer to the application note AN0020 available at http://www.ums-gaas.com for ESD sensitivity and handling recommendations for the UMS products. Ref : DSCHA72159287 - 14 Oct 09 7/8 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice X-band High Power Amplifier CHA7215 Ordering Information Chip form : CHA7215-99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref : DSCHA72159287 - 14 Oct 09 8/8 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice