UMS CHA7215-99F00 X-band high power amplifier Datasheet

CHA7215
RoHS COMPLIANT
X-band High Power Amplifier
GaAs Monolithic Microwave IC
Description
VG1R
VD1
VG2R
● ●
The CHA7215 is a monolithic three-stage
GaAs high power amplifier designed for X
band applications.
The HPA provides typically 9W output power
associated to 35% power added efficiency at
4dBc and a high robustness on mismatch
load.
This device is manufactured using 0.25 µm
Power pHEMT process, including, via holes
through the substrate and air bridges.
VD2
VG3R
● ●
VD3
● ●
●
●
OUT
IN
●
●
VD1
● ●
VD2
VG3R
VD3
Output Power versus Frequency @Pin=19dBm
41
40,5
40
O u tp u t P o w e r (d B m )
Main Features
0.25 µm Power pHEMT Technology
Frequency band: 8.5 – 11.5GHz
Output power: 39.5dBm at saturation
High linear gain: 28dB
Power added efficiency: 34% @4dBc
Quiescent bias point: Vd=8V, Id=2.3A
Chip size: 5 x 3.31 x 0.07mm
39,5
39
38,5
38
37,5
37
36,5
Temp=-40°C
36
Temp=+20°C
35,5
Temp=+80°C
35
8
8,5
9
9,5
10
10,5
11
11,5
Frequency (GHz)
Main Characteristics
Vd=8V, Id (Quiescent) = 2.3A, Drain Pulse width = 25µs, Duty cycle = 10%
Symbol
Top
Fop
PAE_4dBc
Psat
G
Parameter
Operating temperature range
Operating frequency range
Min
-40
8.5
Typ
Max
+80
11.5
Unit
°C
GHz
Power added efficiency @4dBc @ 20°C
34
%
Saturated output power @ 20°C
39.5
dBm
Small signal gain @ 20°C
25
28
31
dB
ESD Protections: Electrostatic discharge sensitive device. Observe handling precautions!
Ref : DSCHA72159287 - 14 Oct 09
1/8
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
12
X-band High Power Amplifier
CHA7215
Electrical Characteristics on test fixture
Tamb = 20°C, Vd=8V, Id (Quiescent) = 2.3A, Drain Pu lse width = 25µs, Duty cycle = 10%
Symbol
Parameter
Min
Typ
Max
Unit
Fop
Operating frequency
8.5
11.5
GHz
G
Small signal gain
25
28
31
dB
Small signal gain variation versus
-0.05
dB/°C
G_T
temperature
RLin
Input Return Loss
10
dB
RLout
Output Return Loss
12
dB
Psat
Saturated output power
39.5
dBm
Saturated output power variation versus
-0.01
dB/°C
Psat_T
temperature
PAE_4dBc
Power added efficiency @4dBc
34
%
Id_4dBc
Supply drain current @ 4dBc
3.3
4.4
A
Vd1, Vd2, Vd3
Drain supply voltage (2)
8
V
Id
Supply quiescent current (1)
2.3
A
Vg1, Vg2, Vg3
Gate supply voltage
-2.2
V
(1) Parameter can be adjusted by tuning of Vg.
(2) 0.5V variation on Vd leads to around 0.4dB variation of the output power (impact on
robustness see Maximum ratings)
Absolute Maximum Ratings (1)
Tamb = 20°C
Symbol
Parameter
Values
Unit
Cmp
Compression level (2)
6
dBc
Vd
Supply voltage with RF input power
9
V
Vd
Supply voltage without RF input power
10
V
Id
Supply quiescent current
3
A
Id_sat
Supply current in saturation
4.8
A
Vg
Supply voltage
-1.1
V
Tj
Maximum junction temperature
175
°C
Tstg
Storage temperature range
-55 to +125
°C
Top
Operating temperature range
-40 to +80
°C
(1)
Operation of this device above anyone of these parameters may cause
permanent damage.
(2)
For higher compression the level limit can be increased by decreasing the voltage
Vd using the rate 0.5 V / dBc
Ref : DSCHA72159287 - 14 Oct 09
2/8
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
X-band High Power Amplifier
CHA7215
Typical measured characteristics
Measurements on Jig:
Vd=8V, Id (Quiescent) = 2.3A, Drain Pulse width = 25µs, Duty cycle = 10%
38
36
Temp=-40°C
Temp=+20°C
Temp=+80°C
Linear Gain (dB)
34
32
30
28
26
24
22
20
18
8
8,5
9
9,5
10
10,5
11
11,5
12
Frequency (GHz)
Linear gain versus frequency and temperature
Linear Gain (dB) & Output Power (dBm) @10GHz
42
40
38
36
Pout
34
32
30
28
Gain
26
24
22
20
18
16
0
Temp=-40°C
Temp=+20°C
Temp=+80°C
Temp=-40°C
Temp=+20°C
Temp=+80°C
2
4
6
8
10
12
14
16
18
20
Input Power (dBm)
Linear Gain and Output Power @Freq=10GHz
versus input power and temperature
Ref : DSCHA72159287 - 14 Oct 09
3/8
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
X-band High Power Amplifier
CHA7215
41
Output Power @ Pin=17dBm (dBm)
40,5
40
39,5
39
38,5
38
37,5
37
Temp=-40°C
Temp=+20°C
Temp=+80°C
36,5
36
35,5
35
34,5
34
8
8,5
9
9,5
10
10,5
11
11,5
12
Frequency (GHz)
Output Power @Pin=17dBm versus frequency and temperature
5
4,5
ID @Pin=17dBm (A)
4
3,5
3
2,5
2
1,5
1
Temp=-40°C
Temp=+20°C
Temp=+80°C
0,5
0
8
8,5
9
9,5
10
10,5
11
11,5
12
Frequency (GHz)
Id @Pin=17dBm versus frequency and temperature
Ref : DSCHA72159287 - 14 Oct 09
4/8
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
X-band High Power Amplifier
CHA7215
50
45
PAE @Pin=17dBm (%)
40
35
30
25
20
15
10
Temp=-40°C
Temp=+20°C
Temp=+80°C
5
0
8
8,5
9
9,5
10
10,5
11
11,5
12
Frequency (GHz)
PAE @Pin=17dBm versus frequency and temperature
Ref : DSCHA72159287 - 14 Oct 09
5/8
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
X-band High Power Amplifier
CHA7215
4 845
4 500
2 440
2 010
210
410
610
810
1 010
1 210
1 410
1 610
Chip Mechanical Data and Pin references
3 205
3 205
1 855
1 655
3
4
5
6
7
8
9 10 11
12
13
14
1 855
1 655
15
1
4 885
120
3 310
2
28 27 26 25 24 23 22 21 20 19
18
17
16
000
4 845
4 500
210
410
610
810
1 010
1 210
1 410
1 610
1 810
2 010
000
105
2 440
105
5 000
Chip thickness = 70µm +/- 10 µm
RF pads (1, 15) = (122 x 200) µm²
DC pads (2 to 12, 14, 16, 18 to 28) = (100 x 100) µm²
DC pads (13, 17) = (186 x 100) µm²
Pin number
1, 15
3, 8, 12, 18
4, 6, 10, 14, 16, 20, 24, 26
5, 9, 13, 17, 21, 25
2, 7, 11, 19, 22, 23, 27, 28
Ref : DSCHA72159287 - 14 Oct 09
Pin name
IN / OUT
GiR
M
Di
Gi / GiR
6/8
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Description
Input / Output RF
Gate supply voltage
Ground (Not connected)
Drain supply voltage
Not connected
Specifications subject to change without notice
X-band High Power Amplifier
CHA7215
Bonding recommendations
Port
IN
OUT
Connection
External capacitor
Inductance (Lbonding) = 0.35nH
2 gold wires with diameter of 25 µm (600µm max)
Inductance (Lbonding) = 0.35nH
2 gold wires with diameter of 25 µm (600µm max)
Vg
Inductance ≤ 1nH
Vd
Inductance ≤ 1nH
C1 ~ 100pF
C2 ~ 10nF
C1 ~ 100pF
Assembly recommendations in test fixture
Vg
Vd
Vd
Vg
C1=100pF
C2=10nF
Non capacitive pad
Recommended ESD management
Refer to the application note AN0020 available at http://www.ums-gaas.com for ESD
sensitivity and handling recommendations for the UMS products.
Ref : DSCHA72159287 - 14 Oct 09
7/8
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
X-band High Power Amplifier
CHA7215
Ordering Information
Chip form
:
CHA7215-99F/00
Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors
S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of
patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use
as critical components in life support devices or systems without express written approval from United
Monolithic Semiconductors S.A.S.
Ref : DSCHA72159287 - 14 Oct 09
8/8
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
Similar pages