HRV103A Silicon Schottky Barrier Diode for Rectifying REJ03G0398-0100 Rev.1.00 Oct 12, 2004 Features • Low forward voltage drop and suitable for high efficiency rectifying. • Thin Ultra small Resin Package (TURP) is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. Laser Mark Package Code HRV103A S1 TURP Pin Arrangement Cathode mark Mark 1 S1 2 1. Cathode 2. Anode Rev.1.00 Oct 12, 2004 page 1 of 5 HRV103A Absolute Maximum Ratings (Ta = 25°C) Item Repetitive peak reverse voltage Symbol VRRM Value 30 Unit V Reverse voltage Average rectified current VR 2 IO * 30 1 V A Non-Repetitive peak forward surge current Junction temperature IFSM * Tj 5 125 A °C 1 Storage temperature Tstg −55 to +125 Notes: 1. 10ms sine wave 1 pulse 2. Ta = 44°C, With Ceramics board (board size: 50mm × 50 mm, Land size 2mm × 2 mm) Short form wave (θ180°C), VR = 10 V. °C Electrical Characteristics (Ta = 25°C) Item Forward voltage Symbol VF1 Reverse current VF2 VF3 IR1 IR2 C Capacitance Thermal resistance Rth(j-a) Min Typ — — Max 0.27 Unit V — — — — 0.36 0.42 — — — — 100 1000 µA — — — 100 40 — pF °C/W — 200 Test Condition IF = 100 mA IF = 700 mA IF = 1 A, VR = 5 V VR = 30 V VR = 10 V, f = 1 MHz 1 Ceramics board * 2 Glass epoxy board * Notes: 1. Ceramics board 2.0 50h×50w×0.8t 0.5 2.0 0.3 2.0 Unit: mm 1.0 2. Glass epoxy board 6.0 50h×50w×0.8t 0.5 6.0 0.3 2.0 Unit: mm 1.0 3. TURP is the structure which radiates heat to a substrate, please perform mounting to a substrate by reflow. Rev.1.00 Oct 12, 2004 page 2 of 5 HRV103A Main Characteristics 10–1 1.0 Ta = 75°C Pulse test Ta = 25°C 10–2 Reverse current IR (A) Forward current IF (A) 10–1 Pulse test 10–2 10–3 10–4 0 0.2 0.4 0.6 0.8 1.0 Ta = 25°C 10–4 10–6 0 10 20 30 40 Forward voltage VF (V) Reverse voltage VR (V) Fig.1 Forward current vs. Forward voltage Fig.2 Reverse current vs. Reverse voltage f=1MHz Pulse test 100 Capacitance C (pF) 10–3 10–5 10–5 10–6 Ta = 75°C 10 1.0 0.1 1.0 10 Reverse voltage VR (V) Fig.3 Capacitance vs. Reverse voltage Rev.1.00 Oct 12, 2004 page 3 of 5 HRV103A 8 0.8 0.7 0A D=1/6 t T 0.6 t D=— T Tj = 25°C Reverse power dissipation Pd (W) Forward power dissipation Pd (W) 0V sin(θ=180°) D=1/3 0.5 D=1/2 0.4 DC 0.3 0.2 0.1 0 0 0.5 1.0 1.5 Forward current IF (A) Average rectified current IO (A) 1.0 VR=VRRM/3 Tj =125°C Rth(j−a)=100°C/W DC 0.8 D=1/2 sin(θ=180°) 0.6 D=1/3 D=1/6 0.4 0.2 0 −25 0 25 50 75 100 125 Ambient temperature Ta (°C) Fig.6 Average rectified current vs. Ambient temperature Rev.1.00 Oct 12, 2004 page 4 of 5 6 t T t D=— T Tj = 125°C D=1/3 5 D=1/2 4 sin(θ=180°) 3 2 1 0 0 10 20 30 40 Reverse voltage VR (V) Fig.4 Forward power dissipation vs. Forward current 1.2 D=5/6 7 Fig.5 Reverse power dissipation vs. Reverse voltage HRV103A Package Dimensions 0.20 1.25 +– 0.10 0.60 ± 0.05 2.50 ± 0.10 0.55 Max 1.90 ± 0.1 0.13 ± 0.05 0.80 ± 0.05 Unit: mm Package Code JEDEC JEITA Mass (reference value) Rev.1.00 Oct 12, 2004 page 5 of 5 TURP — — 0.004 g Sales Strategic Planning Div. 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