BC817-16LT1G, BC817-25LT1G, BC817-40LT1G General Purpose Transistors http://onsemi.com NPN Silicon COLLECTOR 3 Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS 1 BASE Compliant 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage VCEO 45 V Collector − Base Voltage VCBO 50 V Emitter − Base Voltage VEBO 5.0 V IC 500 mAdc 2 Max Unit SOT−23 CASE 318 STYLE 6 225 1.8 mW mW/°C MARKING DIAGRAM 556 °C/W 300 2.4 mW mW/°C RqJA 417 °C/W TJ, Tstg −55 to +150 °C Collector Current − Continuous 3 1 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR− 5 Board, (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Symbol PD RqJA PD Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina. 6x M G G 1 6x M G = Device Code x = A, B, or C = Date Code* = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2010 October, 2010 − Rev. 11 1 Publication Order Number: BC817−16LT1/D BC817−16LT1G, BC817−25LT1G, BC817−40LT1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Min Typ Max Unit Collector −Emitter Breakdown Voltage (IC = 10 mA) V(BR)CEO 45 − − V Collector −Emitter Breakdown Voltage (VEB = 0, IC = 10 mA) V(BR)CES 50 − − V Emitter −Base Breakdown Voltage (IE = 1.0 mA) V(BR)EBO 5.0 − − V Collector Cutoff Current (VCB = 20 V) (VCB = 20 V, TA = 150°C) ICBO − − − − 100 5.0 nA mA 100 160 250 40 − − − − 250 400 600 − Characteristic OFF CHARACTERISTICS ON CHARACTERISTICS DC Current Gain (IC = 100 mA, VCE = 1.0 V) hFE BC817−16 BC817−25 BC817−40 (IC = 500 mA, VCE = 1.0 V) − Collector −Emitter Saturation Voltage (IC = 500 mA, IB = 50 mA) VCE(sat) − − 0.7 V Base −Emitter On Voltage (IC = 500 mA, VCE = 1.0 V) VBE(on) − − 1.2 V fT 100 − − MHz Cobo − 10 − pF SMALL−SIGNAL CHARACTERISTICS Current −Gain − Bandwidth Product (IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 V, f = 1.0 MHz) ORDERING INFORMATION Device Specific Marking BC817−16LT1G BC817−16LT3G 6A BC817−25LT1G BC817−25LT3G 6B BC817−40LT1G BC817−40LT3G 6C Package Shipping† SOT−23 (Pb−Free) 3000/Tape & Reel SOT−23 (Pb−Free) 10,000/Tape & Reel SOT−23 (Pb−Free) 3000/Tape & Reel SOT−23 (Pb−Free) 10,000/Tape & Reel SOT−23 (Pb−Free) 3000/Tape & Reel SOT−23 (Pb−Free) 10,000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 BC817−16LT1G, BC817−25LT1G, BC817−40LT1G TYPICAL CHARACTERISTICS − BC817−16LT1 300 1 hFE, DC CURRENT GAIN 200 25°C −55°C 100 0 VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) VCE = 1 V 150°C 0.001 0.01 0.01 0.1 1 Figure 1. DC Current Gain vs. Collector Current Figure 2. Collector Emitter Saturation Voltage vs. Collector Current VBE(on), BASE−EMITTER VOLTAGE (V) VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) 0.001 IC, COLLECTOR CURRENT (A) −55°C IC/IB = 10 0.9 25°C 0.8 150°C 0.7 0.6 0.5 0.4 0.3 0.2 −55°C 0.1 IC, COLLECTOR CURRENT (A) 1.1 1.0 150°C 25°C 0.01 1 0.1 IC/IB = 10 0.0001 0.001 0.01 0.1 1 1.2 VCE = 5 V 1.1 1.0 −55°C 0.9 0.8 25°C 0.7 0.6 150°C 0.5 0.4 0.3 0.2 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 3. Base Emitter Saturation Voltage vs. Collector Current Figure 4. Base Emitter Voltage vs. Collector Current http://onsemi.com 3 1 BC817−16LT1G, BC817−25LT1G, BC817−40LT1G θV, TEMPERATURE COEFFICIENTS (mV/°C) 1.0 TJ = 25°C 0.8 0.6 0.4 IC = 10 mA 100 mA 300 mA 500 mA 0.2 0 0.01 0.1 1 IB, BASE CURRENT (mA) 10 +1 qVC for VCE(sat) 0 -1 qVB for VBE -2 100 1 Figure 5. Saturation Region 10 100 IC, COLLECTOR CURRENT (mA) Figure 6. Temperature Coefficients 100 C, CAPACITANCE (pF) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) TYPICAL CHARACTERISTICS − BC817−16LT1 Cib 10 Cob 1 0.1 10 1 VR, REVERSE VOLTAGE (VOLTS) Figure 7. Capacitances http://onsemi.com 4 100 1000 BC817−16LT1G, BC817−25LT1G, BC817−40LT1G TYPICAL CHARACTERISTICS − BC817−25LT1 500 1 hFE, DC CURRENT GAIN 150°C VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) VCE = 1 V 400 300 25°C 200 −55°C 100 0 0.001 0.01 0.001 0.01 0.1 1 Figure 8. DC Current Gain vs. Collector Current Figure 9. Collector Emitter Saturation Voltage vs. Collector Current VBE(on), BASE−EMITTER VOLTAGE (V) −55°C IC/IB = 10 25°C 0.8 150°C 0.7 0.6 0.5 0.4 0.3 0.0001 0.001 0.01 0.1 1 1.2 VCE = 5 V 1.1 1.0 0.9 −55°C 0.8 25°C 0.7 0.6 0.5 150°C 0.4 0.3 0.2 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 10. Base Emitter Saturation Voltage vs. Collector Current Figure 11. Base Emitter Voltage vs. Collector Current 1000 fT, CURRENT−GAIN−BANDWIDTH PRODUCT (MHz) VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) −55°C IC, COLLECTOR CURRENT (A) 0.9 0.2 0.1 IC, COLLECTOR CURRENT (A) 1.1 1.0 150°C 25°C 0.01 1 0.1 IC/IB = 10 VCE = 1 V TA = 25°C 100 10 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) Figure 12. Current Gain Bandwidth Product vs. Collector Current http://onsemi.com 5 1000 1 BC817−16LT1G, BC817−25LT1G, BC817−40LT1G θV, TEMPERATURE COEFFICIENTS (mV/°C) 1.0 TJ = 25°C 0.8 0.6 0.4 IC = 10 mA 100 mA 300 mA 500 mA 0.2 0 0.01 0.1 1 IB, BASE CURRENT (mA) 10 +1 qVC for VCE(sat) 0 -1 qVB for VBE -2 100 1 Figure 13. Saturation Region 10 100 IC, COLLECTOR CURRENT (mA) Figure 14. Temperature Coefficients 100 C, CAPACITANCE (pF) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) TYPICAL CHARACTERISTICS − BC817−25LT1 Cib 10 Cob 1 0.1 10 1 VR, REVERSE VOLTAGE (VOLTS) Figure 15. Capacitances http://onsemi.com 6 100 1000 BC817−16LT1G, BC817−25LT1G, BC817−40LT1G TYPICAL CHARACTERISTICS − BC817−40LT1 1 700 150°C VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) hFE, DC CURRENT GAIN 600 VCE = 1 V 500 25°C 400 300 −55°C 200 100 0 0.001 0.01 0.001 0.01 0.1 1 Figure 16. DC Current Gain vs. Collector Current Figure 17. Collector Emitter Saturation Voltage vs. Collector Current VBE(on), BASE−EMITTER VOLTAGE (V) −55°C IC/IB = 10 0.8 25°C 0.7 0.6 150°C 0.5 0.4 0.3 0.0001 0.001 0.01 0.1 1 1.2 VCE = 5 V 1.1 1.0 0.9 −55°C 0.8 25°C 0.7 0.6 0.5 150°C 0.4 0.3 0.2 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 18. Base Emitter Saturation Voltage vs. Collector Current Figure 19. Base Emitter Voltage vs. Collector Current 1000 fT, CURRENT−GAIN−BANDWIDTH PRODUCT (MHz) VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) 0.01 IC, COLLECTOR CURRENT (A) 0.9 0.2 −55°C IC, COLLECTOR CURRENT (A) 1.1 1.0 150°C 25°C 0.1 0.001 1 0.1 IC/IB = 10 VCE = 1 V TA = 25°C 100 10 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) Figure 20. Current Gain Bandwidth Product vs. Collector Current http://onsemi.com 7 1000 1 BC817−16LT1G, BC817−25LT1G, BC817−40LT1G θV, TEMPERATURE COEFFICIENTS (mV/°C) 1.0 TJ = 25°C 0.8 0.6 0.4 IC = 10 mA 100 mA 300 mA 500 mA 0.2 0 0.01 0.1 1 IB, BASE CURRENT (mA) 10 +1 qVC for VCE(sat) 0 -1 qVB for VBE -2 100 1 Figure 21. Saturation Region 10 100 IC, COLLECTOR CURRENT (mA) Figure 22. Temperature Coefficients 100 C, CAPACITANCE (pF) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) TYPICAL CHARACTERISTICS − BC817−40LT1 Cib 10 Cob 1 0.1 10 1 VR, REVERSE VOLTAGE (VOLTS) Figure 23. Capacitances http://onsemi.com 8 100 1000 BC817−16LT1G, BC817−25LT1G, BC817−40LT1G TYPICAL CHARACTERISTICS − BC817−16LT1, BC817−25LT1, BC817−40LT1 1 1 ms 10 ms 100 ms 1s Thermal Limit IC (A) 0.1 0.01 Single Pulse Test @ TA = 25°C 0.001 0.01 0.1 1 VCE (Vdc) 10 Figure 24. Safe Operating Area http://onsemi.com 9 100 BC817−16LT1G, BC817−25LT1G, BC817−40LT1G PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AN NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. D SEE VIEW C 3 HE E 1 2 e b DIM A A1 b c D E e L L1 HE 0.25 q A L A1 L1 VIEW C MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 0.8 0.031 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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