To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Renesas Technology Home Page: http://www.renesas.com Renesas Technology Corp. Customer Support Dept. April 1, 2003 Cautions Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corporation product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corporation or a third party. 2. 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Please contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corporation is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corporation for further details on these materials or the products contained therein. H7N0307AB Silicon N Channel MOS FET High Speed Power Switching ADE-208-1568A (Z) 2nd. Edition Aug. 2002 Features • Low on-resistance • RDS(on) = 4.6 mΩ typ. • Low drive current • 4.5 V gate drive device can be driven from 5 V source Outline TO-220AB D G S 1 2 3 1. Gate 2. Drain (Frange) 3. Source H7N0307AB Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS 30 V Gate to source voltage VGSS ±20 V Drain current ID 60 A 240 A 60 A 90 W Note 1 Drain peak current ID(pulse) Body-drain diode reverse drain current IDR Channel dissipation Pch Channel to Case Thermal Impedance θch-c 1.39 °C/W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C Rev.1, Aug. 2002, page 2 of 2 Note 2 H7N0307AB Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit V Test Conditions Drain to source breakdown voltage V(BR)DSS 30 — — Gate to source breakdown voltage V(BR)GSS ±20 — — Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 Zero gate voltage drain current IDSS — — 10 µA VDS = 30 V, VGS = 0 Gate to source cutoff voltage VGS(off) 1.0 — 2.5 V ID = 1 mA, VDS = 10 V Static drain to source on state RDS(on) — 4.6 5.8 mΩ ID = 30 A, VGS = 10 V — 8.0 11.5 mΩ ID = 30 A, VGS = 4.5 V |yfs| 40 65 — S ID = 30 A, VDS = 10 V Input capacitance Ciss — 2500 — pF VDS = 10 V Output capacitance Coss — 650 — pF VGS = 0 Reverse transfer capacitance Crss — 350 — pF f = 1 MHz Total gate charge Qg — 40 — nc VDD = 10 V Gate to source charge Qgs — 7 — nc VGS = 10 V Gate to drain charge Qgd — 8 — nc ID = 60 A Turn-on delay time td(on) — 20 — ns VGS = 10 V, ID = 30 A Rise time tr — 300 — ns RL =0.33 Ω Turn-off delay time td(off) — 70 — ns Rg = 4.7 Ω Fall time tf — 20 — ns Body–drain diode forward voltage VDF — 0.92 — V IF = 60 A, VGS = 0 — 60 — ns IF = 60 A, VGS = 0 diF/ dt = 50 A/µs resistance Forward transfer admittance Body–drain diode reverse recovery trr time ID = 10 mA, VGS = 0 IG = ±100 µA, VDS = 0 Note 1 Note 1 Note 1 Note 1 Notes: 1. Pulse test Rev.1, Aug. 2002, page 3 of 3 H7N0307AB Main Characteristics Power vs. Temperature Derating Maximum Safe Operation Area I D (A) 500 120 80 40 DC 10 1 0.1 50 100 Case Temperature 150 200 µs Op era PW tio n =1 0m s Operation in this area is limited by R DS(on) Tc (°C) 0.01 0.1 0.3 1 3 10 30 100 Drain to Source Voltage V DS (V) Typical Output Characteristics 50 Typical Transfer Characteristics 50 10V V DS = 10 V Pulse Test 3.5 V (A) 4.5 V ID 40 Pulse Test 30 20 3V 10 Drain Current I D (A) 1 m 100 s µs Tc = 25°C 1 shot Pulse 0 Drain Current 10 100 Drain Current Channel Dissipation Pch (W) 160 40 30 20 25°C Tc = 75°C -25°C 10 VGS = 2.5 V 0 2 4 6 Drain to Source Voltage Rev.1, Aug. 2002, page 4 of 4 8 10 V DS (V) 0 1 2 3 Gate to Source Voltage 5 4 V GS (V) H7N0307AB Static Drain to Source on State Resistance vs. Drain Current 100 Pulse Test 50 0.16 0.08 I D = 10 A 0.04 5A 2A Static Drain to Source on State Resistance RDS(on) (m Ω) 0 4 8 12 Gate to Source Voltage 16 20 V GS (V) Static Drain to Source on State Resistance vs. Temperature 20 Pulse Test 16 I D = 2 A, 5 A, 10 A 12 V GS = 4.5 V 8 2 A, 5 A, 10 A 4 10 V 0 -40 Drain to Source On State Resistance R DS(on) (m Ω) 0.12 Pulse Test 0 40 80 120 160 Case Temperature Tc (°C) 20 VGS = 4.5 V 10 5 10 V 2 1 0.1 0.2 0.5 1 2 5 10 20 50 100 Drain Current I D (A) Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance |yfs| (S) V DS(on) (V) 0.20 Drain to Source Voltage Drain to Source Saturation Voltage vs. Gate to Source Voltage 100 Tc = -25°C 30 75°C 10 25°C 3 1 0.3 0.1 0.1 V DS = 10 V Pulse Test 0.3 1 3 10 30 100 Drain Current ID (A) Rev.1, Aug. 2002, page 5 of 5 H7N0307AB Typical Capacitance vs. Drain to Source Voltage Body-Drain Diode Reverse Recovery Time 500 3000 Capacitance C (pF) 10000 Reverse Recovery Time trr (ns) 1000 200 100 50 20 10 0.1 Ciss 1000 Coss 300 Crss 100 30 di / dt = 50 A / µs V GS = 0, Ta = 25°C VGS = 0 f = 1 MHz 10 0 0.3 1 3 10 30 100 Reverse Drain Current I DR (A) 16 30 V DD = 25 V 10 V 12 5V V DS 20 0 8 V DD = 25 V 10 V 5V 20 40 60 80 Gate Charge Qg (nc) Rev.1, Aug. 2002, page 6 of 6 4 0 100 Switching Time t (ns) V GS 40 10 500 20 V GS (V) I D = 60 A Gate to Source Voltage Drain to Source Voltage V DS (V) Dynamic Input Characteristics 50 10 20 30 40 50 Drain to Source Voltage V DS (V) Switching Characteristics 200 100 tr t d(off) 50 t d(on) 20 tf 10 V GS = 10 V , VDS = 10 V Rg = 4.7 Ω, duty < 1 % 5 2 5 10 20 0.1 0.2 0.5 1 Drain Current I D (A) 50 100 H7N0307AB Reverse Drain Current vs. Souece to Drain Voltage Reverse Drain Current I DR (A) 100 80 10 V 60 V GS = 0 5V 40 20 Pulse Test 0 0.4 0.8 1.2 Source to Drain Voltage 1.6 2.0 V SD (V) Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance γ s (t) 3 Tc = 25°C 1 D=1 0.5 0.3 0.1 0.03 0.2 θch − c(t) = γs (t) • θch − c θch − c = 1.38°C/ W, Tc = 25°C 0.1 0.05 0.02 e 1 0.0 puls t o h 1s PDM D= PW T PW T 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (s) Rev.1, Aug. 2002, page 7 of 7 H7N0307AB Switching Time Test Circuit Switching Time Waveform Vout Monitor Vin Monitor Rg 90% D.U.T. RL Vin Vin 10 V V DS = 10 V Vout 10% 10% 90% td(on) Rev.1, Aug. 2002, page 8 of 8 tr 10% 90% td(off) tf H7N0307AB Package Dimensions As of January, 2002 Unit: mm 2.79 ± 0.2 11.5 MAX 10.16 ± 0.2 9.5 +0.1 φ 3.6 –0.08 1.26 ± 0.15 15.0 ± 0.3 6.4 18.5 ± 0.5 1.27 +0.2 –0.1 8.0 4.44 ± 0.2 7.8 ± 0.5 1.5 MAX 0.76 ± 0.1 2.54 ± 0.5 2.54 ± 0.5 14.0 ± 0.5 2.7 MAX 0.5 ± 0.1 Hitachi Code JEDEC JEITA Mass (reference value) TO-220AB Conforms Conforms 1.8 g Rev.1, Aug. 2002, page 9 of 9 H7N0307AB Disclaimer 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Sales Offices Hitachi, Ltd. Semiconductor & Integrated Circuits Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: (03) 3270-2111 Fax: (03) 3270-5109 URL http://www.hitachisemiconductor.com/ For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe Ltd. Electronic Components Group Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 585200 Hitachi Asia Ltd. Hitachi Tower 16 Collyer Quay #20-00 Singapore 049318 Tel : <65>-6538-6533/6538-8577 Fax : <65>-6538-6933/6538-3877 URL : http://semiconductor.hitachi.com.sg Hitachi Europe GmbH Electronic Components Group Dornacher Straße 3 D-85622 Feldkirchen Postfach 201, D-85619 Feldkirchen Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Asia Ltd. (Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road Hung-Kuo Building Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel : <852>-2735-9218 Fax : <852>-2730-0281 URL : http://semiconductor.hitachi.com.hk Copyright © Hitachi, Ltd., 2002. All rights reserved. Printed in Japan. Colophon 6.0 Rev.1, Aug. 2002, page 10 of 10