ASI HF20-12F Npn silicon rf power transistor Datasheet

HF20-12F
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The HF20-12F is Designed for 12.5 V
Class AB & C HF Power Amplifier
Applications in the 2 to 32 MHz Band.
FEATURES INCLUDE:
• Replacement for MRF433 & SD1285
• PG = 15 dB Min. at 30MHz & 20W
• Emitter Ballasting for ruggedness
and reliability.
PACKAGE STYLE .380" 4L FLANGE
MAXIMUM RATINGS
IC
4.5 A
VCB
36 V
VCE
18 V
VEB
4.0 V
PDISS
80 W @ TC = 25 C
TJ
-65 C to +200 C
TSTG
-65 C to +150 C
θJC
2.2 C/W
O
O
O
O
O
1 = COLLECTOR
2 = BASE
3 & 4 = EMITTER
O
CHARACTERISTICS
O
TC = 25 C
SYMBOL
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
UNITS
BVCBO
IC = 50 mA
36
V
BVCES
IC = 50 mA
36
V
BVCEO
IC = 50 mA
18
V
BVEBO
IE = 5.0 mA
4.0
V
ICES
VCE = 15 V
hFE
VCE = 5.0 V
COB
VCB = 12.5 V
GPE
IMD3
ηC
VCC = 12.5 V
5
IC = 1.0 A
10
f = 1.0 MHz
ICQ = 25 mA
POUT = 20 W (PEP)
f = 30.000 & 30.001 MHz
200
100
pF
55
dB
dBc
%
15
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
mA
-30
REV. B
1/1
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