AP04N70BI-H-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ 100% Avalanche Test
D
▼ Fast Switching Characteristic
▼ Simple Drive Requirement
700V
RDS(ON)
2.4Ω
ID
G
▼ RoHS Compliant & Halogen-Free
BVDSS
4
4A
S
Description
AP04N70B series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The TO-220CFM package is widely preferred for all commercialindustrial through hole applications. The mold compound provides
a high isolation voltage capability and low thermal resistance
between the tab and the external heat-sink.
G
D
S
TO-220CFM(I)
.
Absolute Maximum Ratings@Tj=25oC(unless
otherwise specified)
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TC=25℃
ID@TC=100℃
Rating
Units
700
V
+30
V
Drain Current, VGS @ 10V
4
4
A
Drain Current, VGS @ 10V
4
2.5
A
15
A
33
W
0.26
W/℃
8
mJ
4
A
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
Linear Derating Factor
2
EAS
Single Pulse Avalanche Energy
IAR
Avalanche Current
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
3.8
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
65
℃/W
Data & specifications subject to change without notice
1
201501085
AP04N70BI-H-HF
o
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
700
-
-
V
-
0.6
-
V/℃
VGS=10V, ID=1.6A
-
-
2.4
Ω
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=1mA
∆BVDSS/∆Tj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
3
Max. Units
RDS(ON)
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
4
V
gfs
Forward Transconductance
VDS=10V, ID=2A
-
2.5
-
S
IDSS
Drain-Source Leakage Current
VDS=600V, VGS=0V
-
-
10
uA
Drain-Source Leakage Current (T j=125 C) VDS=480V,VGS=0V
-
-
500
uA
Gate-Source Leakage
VGS=+30V, VDS=0V
-
-
+100
nA
ID=4A
-
16.7
-
nC
o
IGSS
3
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=480V
-
4.1
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
4.9
-
nC
3
td(on)
Turn-on Delay Time
VDD=300V
-
11
-
ns
tr
Rise Time
ID=4A
-
8.3
-
ns
td(off)
Turn-off Delay Time
RG=10Ω
-
23.8
-
ns
tf
Fall Time
VGS=10V
-
8.2
-
ns
Ciss
Input Capacitance
VGS=0V
Coss
Crss
-
950
-
pF
Output Capacitance
.
VDS=25V
-
65
-
pF
Reverse Transfer Capacitance
f=1.0MHz
-
6
-
pF
Min.
Typ.
-
-
4
A
-
-
15
A
-
-
1.5
V
Source-Drain Diode
Symbol
IS
ISM
VSD
Parameter
Test Conditions
VD=VG=0V , VS=1.5V
Continuous Source Current ( Body Diode )
Pulsed Source Current ( Body Diode )
Forward On Voltage
3
1
Tj=25℃, IS=4A, VGS=0V
Max. Units
Notes:
1.Pulse width limited by max. junction temperature
o
2.Starting Tj=25 C , VDD=50V , L=1mH , RG=25Ω , IAS=4A.
3.Pulse test
4.Ensure that the junction temperature does not exceed T Jmax..
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP04N70BI-H-HF
2
2.5
o
T C =25 C
T C =150 o C
2
1.5
ID , Drain Current (A)
ID , Drain Current (A)
V G =10V
V G =6.0V
V G =5.0V
1.5
V G =4.5V
1
V G =10V
V G =6.0V
V G =5.0V
V G =4.5V
1
0.5
V G =4.0V
0.5
V G =4.0V
V G =3.5V
0
0
0
1
2
3
4
5
6
7
0
2
V DS , Drain-to-Source Voltage (V)
4
6
8
10
12
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
.
1.2
2.8
I D =2A
V G =10V
2.4
Normalized R DS(ON)
Normalized BVDSS
1.1
1
2
1.6
1.2
0.8
0.9
0.4
0
0.8
-50
0
50
T j , Junction Temperature (
100
o
150
C)
Fig 3. Normalized BVDSS v.s. Junction
Temperature
-50
0
50
100
150
o
T j , Junction Temperature ( C )
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
3
AP04N70BI-H-HF
40
4.5
4
3.5
3
PD (W)
ID , Drain Current (A)
30
2.5
20
2
1.5
10
1
0.5
0
0
25
50
75
100
T C , Case Temperature (
125
o
0
150
50
100
T C , Case Temperature (
C)
Fig 5. Maximum Drain Current v.s.
C)
Fig 6. Typical Power Dissipation
.
Case Temperature
150
o
100
1
Normalized Thermal Response (R thjc)
DUTY=0.5
10
ID (A)
100us
1
1ms
10ms
100ms
0.1
1s
DC
T c =25 o C
Single Pulse
0.2
0.1
0.1
0.05
0.02
0.01
PDM
0.01
t
SINGLE PULSE
T
Duty factor = t/T
Peak Tj = P DM x Rthjc + TC
0.01
0.001
1
10
100
1000
V DS (V)
Fig 7. Maximum Safe Operating Area
10000
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 8. Effective Transient Thermal Impedance
4
AP04N70BI-H-HF
f=1.0MHz
10000
16
I D =4A
12
Ciss
V DS =320V
V DS =400V
10
8
C (pF)
VGS , Gate to Source Voltage (V)
14
V DS =480V
100
Coss
6
4
2
Crss
0
1
0
5
10
15
20
25
1
6
11
16
21
26
31
V DS (V)
Q G , Total Gate Charge (nC)
Fig 9. Gate Charge Characteristics
.
Fig 10. Typical Capacitance Characteristics
5
12
10
4
T j =150 o C
VGS(th) (V)
IS (A)
8
T j = 25 o C
6
3
2
4
1
2
0
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V SD (V)
Fig 11. Forward Characteristic of
Reverse Diode
1.6
-50
0
50
100
150
o
T j , Junction Temperature ( C )
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
5
AP04N70BI-H-HF
VDS
RD
VDS
D
RG
90%
TO THE
OSCILLOSCOPE
0.5x RATED VDS
G
10%
+
S
10 V
VGS
VGS
-
td(on)
Fig 13. Switching Time Circuit
td(off) tf
tr
Fig 14. Switching Time Waveform
.
VG
VDS
10V
0.8 x RATED VDS
G
S
QG
TO THE
OSCILLOSCOPE
D
QGS
QGD
VGS
+
1~ 3 mA
IG
ID
Charge
Fig 15. Gate Charge Circuit
Q
Fig 16. Gate Charge Waveform
6
AP04N70BI-H-HF
MARKING INFORMATION
Part Number
Option
H
04N70BI
Package Code
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
.
7