ASI AP3000A-00 Silicon pin diode chip Datasheet

AP3000A-00
SILICON PIN DIODE CHIP
PACKAGE STYLE 01
DESCRIPTION:
The AP3000C-11 is a Passivated
Epitaxial Silicon PIN Diode Housed in
a Hermetically Sealed Glass Package.
This Device is Designed to Cover a
Wide Range of Control Applications
Such as RF Switching,Phase Shifting,
Modulation, Duplexing Limiting and
Pulse Forming.
MAXIMUM RATINGS
IF
100 mA
VR
300 V
PDISS
250 mW @ TA = 25 C
θJC
20 C/W
O
O
NONE
CHARACTERISTICS
SYMBOL
O
TC = 25 C
TEST CONDITIONS
MINIMUM
TYPICAL
MAXIMUM
UNITS
VBR
IR = 10 µA
CJ
VR = 50 V
VR = 40 V
f = 1.0 MHz
0.2
pF
RS
IF = 50 mA
f = 100 MHz
0.6
Ohms
TL
IF =10 mA
IR = 6.0 mA
1000
nS
Trr
IF =20 mA
IR = 100 mA
100
nS
V
300
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
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