AP3000A-00 SILICON PIN DIODE CHIP PACKAGE STYLE 01 DESCRIPTION: The AP3000C-11 is a Passivated Epitaxial Silicon PIN Diode Housed in a Hermetically Sealed Glass Package. This Device is Designed to Cover a Wide Range of Control Applications Such as RF Switching,Phase Shifting, Modulation, Duplexing Limiting and Pulse Forming. MAXIMUM RATINGS IF 100 mA VR 300 V PDISS 250 mW @ TA = 25 C θJC 20 C/W O O NONE CHARACTERISTICS SYMBOL O TC = 25 C TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS VBR IR = 10 µA CJ VR = 50 V VR = 40 V f = 1.0 MHz 0.2 pF RS IF = 50 mA f = 100 MHz 0.6 Ohms TL IF =10 mA IR = 6.0 mA 1000 nS Trr IF =20 mA IR = 100 mA 100 nS V 300 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1