Burr-Brown BUF634TG3 250ma high-speed buffer Datasheet

®
BUF634
BUF
634
BUF
634
BUF
634
BUF6
34
250mA HIGH-SPEED BUFFER
FEATURES
APPLICATIONS
● HIGH OUTPUT CURRENT: 250mA
● VALVE DRIVER
● SOLENOID DRIVER
● OP AMP CURRENT BOOSTER
● SLEW RATE: 2000V/µs
● PIN-SELECTED BANDWIDTH:
30MHz to 180MHz
● LINE DRIVER
● HEADPHONE DRIVER
● VIDEO DRIVER
● LOW QUIESCENT CURRENT:
1.5mA (30MHz BW)
● WIDE SUPPLY RANGE: ±2.25 to ±18V
● INTERNAL CURRENT LIMIT
● THERMAL SHUTDOWN PROTECTION
● MOTOR DRIVER
● TEST EQUIPMENT
● ATE PIN DRIVER
● 8-PIN DIP, SO-8, 5-LEAD TO-220, 5-LEAD
DDPAK SURFACE-MOUNT
DESCRIPTION
The BUF634 is a high speed unity-gain open-loop
buffer recommended for a wide range of applications.
It can be used inside the feedback loop of op amps to
increase output current, eliminate thermal feedback
and improve capacitive load drive.
For low power applications, the BUF634 operates
on 1.5mA quiescent current with 250mA output,
2000V/µs slew rate and 30MHz bandwidth. Bandwidth can be adjusted from 30MHz to 180MHz by
connecting a resistor between V– and the BW Pin.
Output circuitry is fully protected by internal current
limit and thermal shut-down making it rugged and
easy to use.
The BUF634 is available in a variety of packages to
suit mechanical and power dissipation requirements.
Types include 8-pin DIP, SO-8 surface-mount, 5-lead
TO-220, and a 5-lead DDPAK surface-mount plastic
power package.
5-Lead
TO-220
5-Lead DDPAK
Surface Mount
G=1
1 2 3 4 5
G=1
1 2 3 4 5
8-Pin DIP Package
SO-8 Surface-Mount Package
BW
1
8
NC
NC
2
7
V+
VIN
3
6
VO
V–
4
G=1
5
BW V–
V+
VIN VO
BW V–
V+
VIN VO
NC
NOTE: Tabs are connected
to V– supply.
International Airport Industrial Park • Mailing Address: PO Box 11400, Tucson, AZ 85734 • Street Address: 6730 S. Tucson Blvd., Tucson, AZ 85706 • Tel: (520) 746-1111 • Twx: 910-952-1111
Internet: http://www.burr-brown.com/ • FAXLine: (800) 548-6133 (US/Canada Only) • Cable: BBRCORP • Telex: 066-6491 • FAX: (520) 889-1510 • Immediate Product Info: (800) 548-6132
©
SBOS030
1993 Burr-Brown Corporation
PDS-1206C
Printed in U.S.A. June, 1996
SPECIFICATIONS
ELECTRICAL
At TA = +25°C(1), VS = ±15V, unless otherwise noted.
BUF634P, U, T, F
LOW QUIESCENT CURRENT MODE
PARAMETER
CONDITION
INPUT
Offset Voltage
vs Temperature
vs Power Supply
Input Bias Current
Input Impedance
Noise Voltage
MIN
Specified Temperature Range
VS = ±2.25V(2) to ±18V
VIN = 0V
RL = 100Ω
f = 10kHz
GAIN
OUTPUT
Current Output, Continuous
Voltage Output, Positive
Negative
Positive
Negative
Positive
Negative
Slew Rate
Settling Time, 0.1%
1%
Differential Gain
Differential Phase
MAX
±30
±100
0.1
±0.5
80 || 8
4
±100
MAX
UNITS
✻
✻
✻
±5
8 || 8
✻
✻
mV
µV/°C
mV/V
µA
MΩ || pF
nV/√Hz
✻
±20
0.99
0.93
0.9
✻
✻
✻
✻
✻
✻
V/V
V/V
V/V
IO = 10mA
IO = –10mA
IO = 100mA
IO = –100mA
IO = 150mA
IO = –150mA
(V+) –2.1
(V–) +2.1
(V+) –3
(V–) +4
(V+) –4
(V–) +5
±250
(V+) –1.7
(V–) +1.8
(V+) –2.4
(V– ) +3.5
(V+) –2.8
(V–) +4
✻
✻
✻
✻
✻
✻
✻
✻
✻
✻
✻
✻
✻
mA
V
V
V
V
V
V
RL = 1kΩ
RL = 100Ω
20Vp-p, RL = 100Ω
20V Step, RL = 100Ω
20V Step, RL = 100Ω
3.58MHz, VO = 0.7V, RL = 150Ω
3.58MHz, VO = 0.7V, RL = 150Ω
TEMPERATURE RANGE
Specification
Operating
Storage
Thermal Shutdown
Temperature, TJ
Thermal Resistance, θJA
θJA
θJA
θJC
θJA
θJC
1
±2
TYP
0.95
0.85
0.8
±350
POWER SUPPLY
Specified Operating Voltage
Operating Voltage Range
Quiescent Current, IQ
WIDE BANDWIDTH MODE
MIN
RL = 1kΩ, VO = ±10V
RL = 100Ω, VO = ±10V
RL = 67Ω, VO = ±10V
Short-Circuit Current
DYNAMIC RESPONSE
Bandwidth, –3dB
TYP
±550
±400
30
20
2000
200
50
4
2.5
±15
±2.25(2)
±1.5
IO = 0
–40
–40
–55
“P” Package(3)
“U” Package (3)
“T” Package(3)
“T” Package
“F” Package(3)
“F” Package
180
160
✻
✻
✻
0.4
0.1
✻
+85
+125
+125
✻
✻
✻
±15
✻
✻
✻
✻
✻
✻
✻
V+
V+
VO
mA
MHz
MHz
V/µs
ns
ns
%
°
✻
±18
±2
175
100
150
65
6
65
6
VIN
✻
✻
±20
V
V
mA
✻
✻
✻
°C
°C
°C
°C
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
VIN
VO
BW
V–
V–
✻ Specifications the same as Low Quiescent Mode.
NOTES: (1) Tests are performed on high speed automatic test equipment, at approximately 25°C junction temperature. The power dissipation of this product will
cause some parameters to shift when warmed up. See typical performance curves for over-temperature performance. (2) Limited output swing available at low supply
voltage. See Output voltage specifications. (3) Typical when all leads are soldered to a circuit board. See text for recommendations.
The information provided herein is believed to be reliable; however, BURR-BROWN assumes no responsibility for inaccuracies or omissions. BURR-BROWN
assumes no responsibility for the use of this information, and all use of such information shall be entirely at the user’s own risk. Prices and specifications are subject
to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. BURR-BROWN does not
authorize or warrant any BURR-BROWN product for use in life support devices and/or systems.
®
BUF634
2
PIN CONFIGURATION
Top View
8-Pin Dip Package
SO-8 Surface-Mount Package
Top View
5-Lead
TO-220
BW
1
8
NC
NC
2
7
V+
VIN
3
6
VO
V–
4
5
NC
G=1
5-Lead DDPAK
Surface Mount
G=1
1 2 3 4 5
G=1
1 2 3 4 5
NC = No Connection
BW V–
V+
VIN VO
ABSOLUTE MAXIMUM RATINGS
Supply Voltage ..................................................................................... ±18V
Input Voltage Range ............................................................................... ±VS
Output Short-Circuit (to ground) ................................................. Continuous
Operating Temperature ..................................................... –40°C to +125°C
Storage Temperature ........................................................ –55°C to +125°C
Junction Temperature ....................................................................... +150°C
Lead Temperature (soldering,10s) .................................................... +300°C
BW V–
V+
VIN VO
ELECTROSTATIC
DISCHARGE SENSITIVITY
PACKAGE/ORDERING INFORMATION
PRODUCT
PACKAGE
PACKAGE
DRAWING
NUMBER(1)
BUF634P
BUF634U
BUF634T
BUF634F
8-Pin Plastic DIP
SO-8 Surface-Mount
5-Lead TO-220
5-Lead DDPAK
006
182
315
325
TEMPERATURE
RANGE
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
NOTE: Tab electrically
connected to V–.
Any integrated circuit can be damaged by ESD. Burr-Brown
recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling
and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits
may be more susceptible to damage because very small
parametric changes could cause the device not to meet
published specifications.
NOTE: (1) For detailed drawing and dimension table, please see end of data
sheet, or Appendix C of Burr-Brown IC Data Book.
®
3
BUF634
TYPICAL PERFORMANCE CURVES
At TA = +25°C, VS = ±15V, unless otherwise noted.
GAIN and PHASE vs FREQUENCY
vs TEMPERATURE
–5
–10
0
Low IQ
–40
Phase (°)
–30
–15
–20
TJ = –40°C
TJ = 25°C
TJ = 125°C
Low IQ
–30
–50
10M
100M
Frequency (Hz)
1G
1M
GAIN and PHASE vs FREQUENCY
vs SOURCE RESISTANCE
10M
100M
Frequency (Hz)
1G
GAIN and PHASE vs FREQUENCY
vs LOAD RESISTANCE
0
Wide BW
–5
Low IQ
RS = 50Ω
VO = 10mV
Gain (dB)
10
RL = 100Ω
VO = 10mV 5
–5
Low IQ
–10
0
–15
–10
Phase (°)
–30
RS = 0Ω
RS = 50Ω
RS = 100Ω
Low IQ
–40
–15
–10
Wide BW
–20
5
0
Wide BW
–10
0
10
Gain (dB)
1M
Wide BW
–20
RL = 1kΩ
RL = 100Ω
RL = 50Ω
Low IQ
–30
–40
–50
–50
1M
10M
100M
Frequency (Hz)
1G
1M
GAIN and PHASE vs FREQUENCY
vs LOAD CAPACITANCE
1G
GAIN and PHASE vs FREQUENCY
vs LOAD CAPACITANCE
10
5
0
–5
RL = 100Ω
RS = 50Ω
VO = 10mV
Gain (dB)
RL = 100Ω
RS = 50Ω
VO = 10mV
Low IQ Mode
10M
100M
Frequency (Hz)
–40
Phase (°)
–30
–15
–10
CL = 0pF
CL = 50pF
CL = 200pF
CL = 1nF
–20
0
–10
0
–15
–10
5
–5
Wide BW Mode
–10
0
10
CL = 0
CL = 50pF
CL = 200pF
CL = 1nF
–20
–30
–40
–50
–50
1M
10M
100M
Frequency (Hz)
1G
1M
®
BUF634
4
10M
100M
Frequency (Hz)
1G
Gain (dB)
Phase (°)
0
–5
Wide BW
–40
–50
Phase (°)
5
–10
IQ = 15mA
IQ = 9mA
IQ = 4mA
IQ = 2.5mA
IQ = 1.5mA
–20
Wide BW
10
–10
0
–15
–10
Phase (°)
RL = 100Ω
RS = 50Ω
VO = 10mV
Gain (dB)
10
RL = 100Ω
5
RS = 50Ω
VO = 10mV 0
Gain (dB)
GAIN and PHASE vs FREQUENCY
vs QUIESCENT CURRENT
TYPICAL PERFORMANCE CURVES (CONT)
At TA = +25°C, VS = ±15V, unless otherwise noted.
GAIN and PHASE vs FREQUENCY
vs POWER SUPPLY VOLTAGE
POWER SUPPLY REJECTION vs FREQUENCY
100
5
90
0
–5
Low IQ
–10
0
–15
Phase (°)
–10
Wide BW
–20
Low IQ
–30
–40
VS = ±18V
VS = ±12V
VS = ±5V
VS = ±2.25V
Power Supply Rejection (dB)
Wide BW
10
Gain (dB)
RL = 100Ω
RS = 50Ω
VO = 10mV
80
Wide BW
70
60
50
40
Low IQ
30
20
10
0
–50
1M
10M
100M
Frequency (Hz)
1G
1k
100k
1M
10M
Frequency (Hz)
QUIESCENT CURRENT
vs BANDWIDTH CONTROL RESISTANCE
20
10k
SHORT CIRCUIT CURRENT vs TEMPERATURE
500
+15V
18
450
15mA at R = 0
14
BW
12
R
Limit Current (mA)
Quiescent Current (mA)
16
10
8
–15V
6
4
400
Wide Bandwidth Mode
350
Low IQ Mode
300
250
2
1.5mA at R = ∞
0
200
10
100
1k
10k
–50
–25
0
Resistance (Ω)
25
50
75
100
125
150
Junction Temperature (°C)
QUIESCENT CURRENT vs TEMPERATURE
QUIESCENT CURRENT vs TEMPERATURE
7
20
Cooling
Low IQ Mode
Quiescent Current (mA)
Quiescent Current (mA)
6
5
4
≈10°C
3
2
Thermal Shutdown
15
10
≈10°C
Wide BW Mode
5
1
Cooling
Thermal Shutdown
0
0
–50 –25
0
25
50
75
100 125 150 175 200
–50
Junction Temperature (°C)
–25
0
25
50
75
100
125
150
175
200
Junction Temperature (°C)
®
5
BUF634
TYPICAL PERFORMANCE CURVES (CONT)
At TA = +25°C, VS = ±15V, unless otherwise noted.
OUTPUT VOLTAGE SWING vs OUTPUT CURRENT
OUTPUT VOLTAGE SWING vs OUTPUT CURRENT
13
VIN = 13V
12
Output Voltage Swing (V)
Output Voltage Swing (V)
13
11
VS = ±15V
Low IQ Mode
10
–10
–11
TJ = –40°C
TJ = 25°C
TJ = 125°C
–12
VIN = –13V
VIN = 13V
12
11
VS = ±15V
Wide BW Mode
10
–10
–11
TJ = –40°C
TJ = 25°C
TJ = 125°C
–12
VIN = –13V
–13
–13
0
50
100
150
200
250
0
300
50
100
150
200
MAXIMUM POWER DISSIPATION vs TEMPERATURE
12
TO-220 and DDPAK
Infinite Heat Sink
θ JC = 6°C/W
Power Dissipation (W)
Power Dissipation (W)
10
TO-220 and DDPAK
Free Air
θJA = 65°C/W
8-Pin DIP
θ JA = 100°C/W
300
MAXIMUM POWER DISSIPATION vs TEMPERATURE
3
2
250
|Output Current| (mA)
|Output Current| (mA)
1
SO-8
θ JA = 150°C/W
8
6
TO-220 and DDPAK
Free Air
θ JA = 65°C/W
4
2
0
0
–50
–25
0
25
50
75
100
125
150
–50
Ambient Temperature (°C)
–25
0
25
50
75
100
125
150
Ambient Temperature (°C)
LARGE-SIGNAL RESPONSE
RS = 50Ω, RL = 100Ω
SMALL-SIGNAL RESPONSE
RS = 50Ω, RL = 100Ω
Input
Input
100mV/div
10V/div
Wide BW
Mode
Wide BW
Mode
Low IQ
Mode
Low IQ
Mode
20ns/div
20ns/div
®
BUF634
6
OUTPUT CURRENT
The BUF634 can deliver up to ±250mA continuous output
current. Internal circuitry limits output current to approximately ±350mA—see typical performance curve “Short
Circuit Current vs Temperature”. For many applications,
however, the continuous output current will be limited by
thermal effects.
The output voltage swing capability varies with junction
temperature and output current—see typical curves “Output
Voltage Swing vs Output Current.” Although all four package types are tested for the same output performance using
a high speed test, the higher junction temperatures with the
DIP and SO-8 package types will often provide less output
voltage swing. Junction temperature is reduced in the DDPAK
surface-mount power package because it is soldered directly
to the circuit board. The TO-220 package used with a good
heat sink further reduces junction temperature, allowing
maximum possible output swing.
APPLICATION INFORMATION
Figure 1 is a simplified circuit diagram of the BUF634
showing its open-loop complementary follower design.
V+
Thermal
Shutdown
VIN 200Ω
VO
I1(1)
THERMAL PROTECTION
Power dissipated in the BUF634 will cause the junction
temperature to rise. A thermal protection circuit in the
BUF634 will disable the output when the junction temperature reaches approximately 175°C. When the thermal protection is activated, the output stage is disabled, allowing the
device to cool. Quiescent current is approximately 6mA
during thermal shutdown. When the junction temperature
cools to approximately 165°C the output circuitry is again
enabled. This can cause the protection circuit to cycle on and
off with a period ranging from a fraction of a second to
several minutes or more, depending on package type, signal,
load and thermal environment.
The thermal protection circuit is designed to prevent damage
during abnormal conditions. Any tendency to activate the
thermal protection circuit during normal operation is a sign
of an inadequate heat sink or excessive power dissipation for
the package type.
TO-220 package provides the best thermal performance.
When the TO-220 is used with a properly sized heat sink,
output is not limited by thermal performance. See Application Bulletin AB-037 for details on heat sink calculations.
The DDPAK also has excellent thermal characteristics. Its
mounting tab should be soldered to a circuit board copper
area for good heat dissipation. Figure 3 shows typical
thermal resistance from junction to ambient as a function of
the copper area. The mounting tab of the TO-220 and
DDPAK packages is electrically connected to the V– power
supply.
150Ω
4kΩ
BW
V–
Signal path indicated in bold.
Note: (1) Stage currents are set by I1.
FIGURE 1. Simplified Circuit Diagram.
Figure 2 shows the BUF634 connected as an open-loop
buffer. The source impedance and optional input resistor,
RS, influence frequency response—see typical curves. Power
supplies should be bypassed with capacitors connected close
to the device pins. Capacitor values as low as 0.1µF will
assure stable operation in most applications, but high output
current and fast output slewing can demand large current
transients from the power supplies. Solid tantalum 10µF
capacitors are recommended.
High frequency open-loop applications may benefit from
special bypassing and layout considerations—see “High
Frequency Applications” at end of applications discussion.
V+
10µF
DIP/SO-8
Pinout shown
7
VIN
RS
3
6
BUF634
4
1
The DIP and SO-8 surface-mount packages are excellent for
applications requiring high output current with low average
power dissipation. To achieve the best possible thermal
performance with the DIP or SO-8 packages, solder the
device directly to a circuit board. Since much of the heat is
dissipated by conduction through the package pins, sockets
will degrade thermal performance. Use wide circuit board
traces on all the device pins, including pins that are not
connected. With the DIP package, use traces on both sides
of the printed circuit board if possible.
VO
RL
10µF
Optional connection for
wide bandwidth — see text.
V–
FIGURE 2. Buffer Connections.
®
7
BUF634
THERMAL RESISTANCE vs
CIRCUIT BOARD COPPER AREA
Thermal Resistance, θJA (°C/W)
60
Circuit Board Copper Area
BUF634F
Surface Mount Package
1oz copper
50
40
30
20
BUF634F
Surface Mount Package
10
0
1
2
3
4
5
Copper Area (inches2)
FIGURE 3. Thermal Resistance vs Circuit Board Copper Area.
POWER DISSIPATION
the quiescent current to approximately 15mA. Intermediate
bandwidths can be set by connecting a resistor in series with
the bandwidth control pin—see typical curve "Quiescent
Current vs Resistance" for resistor selection. Characteristics
of the bandwidth control pin can be seen in the simplified
circuit diagram, Figure 1.
The rated output current and slew rate are not affected by the
bandwidth control, but the current limit value changes slightly.
Output voltage swing is somewhat improved in the wide
bandwidth mode. The increased quiescent current when in
wide bandwidth mode produces greater power dissipation
during low output current conditions. This quiescent power
is equal to the total supply voltage, (V+) + |(V–)|, times the
quiescent current.
Power dissipation depends on power supply voltage, signal
and load conditions. With DC signals, power dissipation is
equal to the product of output current times the voltage
across the conducting output transistor, VS – VO. Power
dissipation can be minimized by using the lowest possible
power supply voltage necessary to assure the required output
voltage swing.
For resistive loads, the maximum power dissipation occurs
at a DC output voltage of one-half the power supply voltage.
Dissipation with AC signals is lower. Application Bulletin
AB-039 explains how to calculate or measure power dissipation with unusual signals and loads.
Any tendency to activate the thermal protection circuit
indicates excessive power dissipation or an inadequate heat
sink. For reliable operation, junction temperature should be
limited to 150°C, maximum. To estimate the margin of
safety in a complete design, increase the ambient temperature until the thermal protection is triggered. The thermal
protection should trigger more than 45°C above the maximum expected ambient condition of your application.
BOOSTING OP AMP OUTPUT CURRENT
The BUF634 can be connected inside the feedback loop of
most op amps to increase output current—see Figure 4.
When connected inside the feedback loop, the BUF634’s
offset voltage and other errors are corrected by the feedback
of the op amp.
To assure that the op amp remains stable, the BUF634’s
phase shift must remain small throughout the loop gain of
the circuit. For a G=+1 op amp circuit, the BUF634 must
contribute little additional phase shift (approximately 20° or
less) at the unity-gain frequency of the op amp. Phase shift
is affected by various operating conditions that may affect
stability of the op amp—see typical Gain and Phase curves.
INPUT CHARACTERISTICS
Internal circuitry is protected with a diode clamp connected
from the input to output of the BUF634—see Figure 1. If the
output is unable to follow the input within approximately 3V
(such as with an output short-circuit), the input will conduct
increased current from the input source. This is limited by
the internal 200Ω resistor. If the input source can be damaged by this increase in load current, an additional resistor
can be connected in series with the input.
Most general-purpose or precision op amps remain unitygain stable with the BUF634 connected inside the feedback
loop as shown. Large capacitive loads may require the
BUF634 to be connected for wide bandwidth for stable
operation. High speed or fast-settling op amps generally
require the wide bandwidth mode to remain stable and to
assure good dynamic performance. To check for stability
with an op amp, look for oscillations or excessive ringing on
signal pulses with the intended load and worst case conditions that affect phase response of the buffer.
BANDWIDTH CONTROL PIN
The –3dB bandwidth of the BUF634 is approximately 30MHz
in the low quiescent current mode (1.5mA typical). To select
this mode, leave the bandwidth control pin open (no connection).
Bandwidth can be extended to approximately 180MHz by
connecting the bandwidth control pin to V–. This increases
®
BUF634
8
HIGH FREQUENCY APPLICATIONS
The BUF634’s excellent bandwidth and fast slew rate make it
useful in a variety of high frequency open-loop applications.
When operated open-loop, circuit board layout and bypassing
technique can affect dynamic performance.
For best results, use a ground plane type circuit board layout
and bypass the power supplies with 0.1µF ceramic chip
capacitors at the device pins in parallel with solid tantalum
10µF capacitors. Source resistance will affect high-frequency
peaking and step response overshoot and ringing. Best
response is usually achieved with a series input resistor of
25Ω to 200Ω, depending on the signal source. Response
with some loads (especially capacitive) can be improved
with a resistor of 10Ω to 150Ω in series with the output.
V+
C1(1)
VO
OPA
VIN
BUF634
BW
NOTE: (1) C1 not required
for most common op amps.
Use with unity-gain stable
high speed op amps.
Wide BW mode
(if required)
V–
OP AMP
RECOMMENDATIONS
OPA177, OPA1013
OPA111, OPA2111
OPA121, OPA234(1),
OPA130(1)
Use Low IQ mode. G = 1 stable.
OPA27, OPA2107
OPA602, OPA131(1)
Low IQ mode is stable. Increasing CL may cause
excessive ringing or instability. Use Wide BW mode.
OPA627, OPA132(1)
Use Wide BW mode, C1 = 200pF. G = 1 stable.
OPA637, OPA37
Use Wide BW mode. These op amps are not G = 1
stable. Use in G > 4.
NOTE: (1) Single, dual, and quad versions.
FIGURE 4. Boosting Op Amp Output Current.
V+
G = +21
250Ω
5kΩ
VIN 1µF
OPA132
BUF634
BW
Drives headphones
or small speakers.
RL = 100Ω
THD+N
f
100kΩ
V–
1kHz
0.015%
20kHz
0.02%
FIGURE 5. High Performance Headphone Driver.
+24V
C(1)
10kΩ
+
10µF
BUF634
C(1)
10kΩ
IO = ±200mA
VIN
±2V
+
12V
–
pseudo
ground
+
12V
–
OPA177
BUF634
Valve
10Ω
NOTE: (1) System bypass capacitors.
FIGURE 6. Pseudo-Ground Driver.
FIGURE 7. Current-Output Valve Driver.
10kΩ
1kΩ
VIN
±1V
10kΩ
9kΩ
1/2
OPA2234
BUF634
Motor
BUF634
1/2
OPA2234
±20V
at 250mA
FIGURE 8. Bridge-Connected Motor Driver.
®
9
BUF634
PACKAGE OPTION ADDENDUM
www.ti.com
26-Mar-2010
PACKAGING INFORMATION
Orderable Device
Status (1)
Package
Type
Package
Drawing
Pins Package Eco Plan (2)
Qty
BUF634F
OBSOLETE
DDPAK/
TO-263
KTT
5
BUF634F/500
ACTIVE
DDPAK/
TO-263
KTT
5
BUF634F/500E3
ACTIVE
DDPAK/
TO-263
KTT
BUF634FKTTT
ACTIVE
DDPAK/
TO-263
BUF634FKTTTE3
ACTIVE
BUF634P
Lead/Ball Finish
MSL Peak Temp (3)
TBD
Call TI
Call TI
500
Pb-Free
(RoHS)
CU SN
Level-2-260C-1 YEAR
5
500
Pb-Free
(RoHS)
CU SN
Level-2-260C-1 YEAR
KTT
5
50
TBD
Call TI
Call TI
DDPAK/
TO-263
KTT
5
50
TBD
Call TI
Call TI
ACTIVE
PDIP
P
8
50
Green (RoHS &
no Sb/Br)
CU NIPDAU
N / A for Pkg Type
BUF634PG4
ACTIVE
PDIP
P
8
50
Green (RoHS &
no Sb/Br)
CU NIPDAU
N / A for Pkg Type
BUF634T
ACTIVE
TO-220
KC
5
49
TBD
Call TI
Call TI
BUF634TG3
ACTIVE
TO-220
KC
5
49
TBD
Call TI
Call TI
BUF634U
ACTIVE
SOIC
D
8
75
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-3-260C-168 HR
BUF634U/2K5
ACTIVE
SOIC
D
8
2500 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-3-260C-168 HR
BUF634U/2K5E4
ACTIVE
SOIC
D
8
2500 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-3-260C-168 HR
BUF634UE4
ACTIVE
SOIC
D
8
CU NIPDAU
Level-3-260C-168 HR
75
Green (RoHS &
no Sb/Br)
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in
a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check
http://www.ti.com/productcontent for the latest availability information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and
package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS
compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame
retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder
temperature.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is
provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the
accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take
reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on
incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited
information may not be available for release.
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com
26-Mar-2010
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI
to Customer on an annual basis.
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
14-Jul-2012
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
BUF634U/2K5
Package Package Pins
Type Drawing
SOIC
D
8
SPQ
Reel
Reel
A0
Diameter Width (mm)
(mm) W1 (mm)
2500
330.0
12.4
Pack Materials-Page 1
6.4
B0
(mm)
K0
(mm)
P1
(mm)
5.2
2.1
8.0
W
Pin1
(mm) Quadrant
12.0
Q1
PACKAGE MATERIALS INFORMATION
www.ti.com
14-Jul-2012
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
BUF634U/2K5
SOIC
D
8
2500
367.0
367.0
35.0
Pack Materials-Page 2
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