IXYS IXFN48N50Q Hiperfet power mosfets q-class Datasheet

HiPerFETTM
Power MOSFETs
Q-Class
VDSS
IXFN 44N50Q
IXFN 48N50Q
RDS(on)
500 V 44 A 120 mW
500 V 48 A 100 mW
trr £ 250 ns
N-Channel Enhancement Mode
Avalanche Rated, Low Qg, High dv/dt
Symbol
Test Conditions
VDSS
TJ = 25°C to 150°C
500
V
VDGR
TJ = 25°C to 150°C; RGS = 1 MW
500
V
VGS
Continuous
±20
V
VGSM
Transient
±30
V
ID25
TC = 25°C
44N50
48N50
44
48
A
A
IDM
TC = 25°C, pulse width limited by TJM
44N50
48N50
176
192
A
A
Maximum Ratings
IAR
TC = 25°C
48
A
EAR
EAS
TC = 25°C
60
2.5
mJ
mJ
dv/dt
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS,
TJ £ 150°C, RG = 2 W
5
V/ns
PD
TC = 25°C
500
W
-55 to +150
°C
TJM
150
°C
Tstg
-55 to +150
°C
TJ
VISOL
50/60 Hz, RMS
IISOL£ 1 mA
t = 1 min
t=1s
2500
3000
V~
V~
Md
Mounting torque
Terminal connection torque
1.5/13
1.5/13
Nm/lb.in.
Nm/lb.in.
30
g
Weight
Symbol
Test Conditions
VDSS
VGS = 0 V, ID = 1 mA
500
VGS(th)
VDS = VGS, ID = 4 mA
2.0
IGSS
VGS = ±20 VDC, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min.
typ.
max.
TJ = 25°C
TJ = 125°C
44N50
48N50
Pulse test, t £ 300 ms, duty cycle d £ 2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
ID25
V
4.0
V
±100
nA
100
2
mA
mA
120
100
mW
mW
miniBLOC, SOT-227 B (IXFN)
E153432
S
G
S
D
G = Gate
S = Source
D = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
• IXYS advanced low Qg process
• Low gate charge and capacitances
- easier to drive
- faster switching
• Unclamped Inductive Switching (UIS)
rated
• Low RDS (on)
• Fast intrinsic diode
• International standard package
• miniBLOC with Aluminium nitride
isolation for low thermal resistance
• Low terminal inductance (<10 nH) and
stray capacitance to heatsink (<35pf)
• Molding epoxies meet UL 94 V-0
flammability classification
Applications
• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• Temperature and lighting controls
Advantages
• Easy to mount
• Space savings
• High power density
98715 (03/30/00)
1-2
IXFN 44N50Q
IXFN 48N50Q
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs
VDS = 20 V; ID = 0.5 • ID25, pulse test
C iss
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
C rss
td(on)
30
45
S
6400
pF
930
pF
220
pF
miniBLOC, SOT-227 B
33
ns
tr
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
22
ns
M4 screws (4x) supplied
td(off)
RG = 4.7 W (External),
75
ns
Dim.
10
ns
190
tf
Qg(on)
Qgs
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
31.50
7.80
31.88
8.20
1.240
0.307
1.255
0.323
nC
C
D
4.09
4.09
4.29
4.29
0.161
0.161
0.169
0.169
40
nC
E
F
4.09
14.91
4.29
15.11
0.161
0.587
0.169
0.595
86
nC
G
H
30.12
38.00
30.30
38.23
1.186
1.496
1.193
1.505
K/W
J
K
11.68
8.92
12.22
9.60
0.460
0.351
0.481
0.378
K/W
L
M
0.76
12.60
0.84
12.85
0.030
0.496
0.033
0.506
N
O
25.15
1.98
25.42
2.13
0.990
0.078
1.001
0.084
P
Q
4.95
26.54
5.97
26.90
0.195
1.045
0.235
1.059
R
S
3.94
4.72
4.42
4.85
0.155
0.186
0.174
0.191
T
U
24.59
-0.05
25.07
0.1
0.968
-0.002
0.987
0.004
0.26
0.05
Source-Drain Diode
Symbol
Test Conditions
IS
VGS = 0 V
ISM
VSD
t rr
QRM
IRM
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
48
A
Repetitive; pulse width limited by TJM
192
A
IF = IS, VGS = 0 V,
Pulse test, t £ 300 ms, duty cycle d £ 2 %
1.5
V
250
ns
mC
A
IF = IS, -di/dt = 100 A/ms, VR = 100 V
© 2000 IXYS All rights reserved
Inches
Min.
Max.
A
B
RthJC
RthCK
Millimeter
Min.
Max.
1.4
10
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
2-2
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