Datasheet μPD166038T1J INTELLIGENT POWER DEVICE R07DS1115EJ0201 Rev.2.01 Jul 02, 2015 1. Overview 1.1 Description Family: μPD166038T1J is a part of 2nd Generation Intelligent Power Devices (IPD). This is N-channel high-side switch with charge pump, voltage controlled input, diagnostic feedback with proportional load current sense and embedded protection function. Family includes up to 14 devices depending on on-state resistance, package and channel number combination. Scalability: Variety of on-state resistance combined with standardized package on pin-out give user high flexibility for unit design depending on target load. Robustness: Because of advanced protection method, 2nd Generation Intelligent Power Devices achieve high robustness against long term and repetitive short circuit condition. 1.2 Features - Built-in charge pump - 3.3V compatible logic interface - Low standby current - Short circuit protection - Shutdown by over current detection - Power limitation protection by over load detection (Power limitation: current limitation with delta Tch control) - Absolute Tch over temperature protection - Built-in diagnostic function - Proportional load current sensing - Defined fault signal in case of abnormal load condition - Loss of ground protection - Under voltage lock out - Active clamp operation at inductive load switch off - Cross current protection in case of H-bridge high side usage - AEC Qualified - RoHS compliant 1.3 Application - Light bulb switching from 35W to 60W, Flasher driver - Switching of all types of 14V DC grounded loads, such as LED, inductor, resistor and capacitor - Power supply switch, fail-safe switch of 14V DC grounded system Note: The information contained in this document is the one that was obtained when the document was issued, and may be subject to change. R07DS1115EJ0201 Rev.2.01 Jul 02, 2015 Page 1 of 39 μPD166038T1J Datasheet 2. Ordering Information 2. Ordering Information Part No. Nick name UPD166038T1J-E1-AY UPD166038T1J-E2-AY NHD020B NHD020B Lead plating Packing Package Pure Matte Sn Pure Matte Sn Tape 1500 p/reel Tape 1500 p/reel 12-pin Power HSSOP 12-pin Power HSSOP Note: MSL: 1, profile acc. J-STD-20C 2.1 Nick name N H D 020 B On-state resistance S: Single channel D: Dual channel Q: Quad channel A: TO252-7 B: 12-pin Power HSSOP C: 24-pin Power HSSOP Nch High-side R07DS1115EJ0201 Rev.2.01 Jul 02, 2015 Page 2 of 39 µPD166038T1J Datasheet 3. Specification 3. Specification 3.1 Block Diagram 3.1.1 Nch High-side Single Device Voltage and Current Definition R07DS1115EJ0201 Rev.2.01 Jul 02, 2015 Page 3 of 39 μPD166038T1J Datasheet 3. Specification 3.2 Pin Configuration 3.2.1 12-pin Power HSSOP Pin Configuration Pin No. Terminal Name 1 GND 2 IN1 3 IS1 4 IS2 5 IN2 6 VCC 7 SEN 8 OUT2 9 OUT2 10 OUT1 11 OUT1 12 VCC Tab VCC 12 11 10 9 8 7 Tab Tab 1 2 3 4 5 6 Pin function Terminal Name GND Pin function Ground connection INn Input signal for channel n (n=1 to 2) ISn Current sense and Diagnosis output signal channel n (n=1 to 2) Sense enable input SEN OUTn VCC N.C. Protected high-side power output channel n (n=1 to 2) Positive power supply for logic supply as well as output power supply Non connection R07DS1115EJ0201 Rev.2.01 Jul 02, 2015 Recommended connection Connected to GND through a 100 Ohm resistor or a diode for reverse current protection Refer chapter 6. Connected to MCU port through 2k-50K serial resistor Connected to GND through a 0.67K-5K resistor Connected to MCU port through 2k-50K serial resistor Connected to load with small 50-100nf capacitor in parallel Connected to battery voltage with small 100nf capacitor in parallel Left open Page 4 of 39 μPD166038T1J Datasheet 3. Specification 3.3 Absolute Maximum Ratings Ta=25degreeC, unless other specified Parameter Vcc Voltage Symbol VCC Rating 28 Unit V Vcc Voltage at reverse battery condition -VCC -16 V GND Reverse current at reverse battery condition Vcc voltage under Load Dump condition Load Current IGND(Rev) 200 mA Vload dump 42 V IL Self limited A Total power dissipation for whole device (DC) PD 1.85 W Voltage at IN pin VIN -2 ~ 16 V -16 IN pin current IIN 10 mA Voltage at IS pin VIS VCC V -16 V -30 mA -2 ~ 16 V IS Reverse current at reverse battery condition Voltage at SEN pin IIS(Rev) VSEN -16 SEN pin current ISEN 10 mA Channel Temperature Storage Temperature ESD susceptibility Tch Tstg VESD -40 to +150 -55 to +150 2000 degreeC degreeC V 4000 200 Inductive load switch-off EAS 70 energy dissipation single pulse Inductive load switch-off EAR 35 energy dissipation repetitive pulse Remark) All voltages refer to ground pin of the device R07DS1115EJ0201 Rev.2.01 Jul 02, 2015 Test Condition RL=3.4ohm, t<2min, RIN=2kohm, RSEN=2kohm, RIS=1kohm, RGND=100ohm RL=3.4ohm, t<2min RI=1ohm, RL=3.4ohm, RIS=1kohm, RIN=2kohm, RSEN=2kohm , RGND=100ohm, td=400ms, Ta=85degreeC, Device on 50mmx50mmx1.5mm epoxy PCB FR4 with 6 cm2 of 70 um copper area DC RIN=2kohm At reverse battery condition, t<2min, RIN=2kohm, RSEN=2kohm DC DC RIS=1kohm At reverse battery condition, t<2min, RL=3.4ohm, RIS=1kohm At reverse battery condition, t<2min, RL=3.4ohm DC RSEN=2kohm At reverse battery condition, t<2min RIN=2kohm, RSEN=2kohm DC HBM AEC-Q100-002 std. R=1.5kohm, C=100pF All pin mJ IEC61000-4-2 std. VCC, OUT R=330ohm, C=150pF, 100nF at VCC and OUT MM AEC-Q100-003 std. R=0ohm, C=200pF VCC=13.5V, Tch,start<150degreeC, RL=3.4ohm mJ VCC=13.5V, Tch,start=85degreeC, RL=3.4ohm V Page 5 of 39 μPD166038T1J Datasheet 3. Specification 3.4 Thermal Characteristics Parameter Thermal characteristics Symbol Rth(ch-a) Rth(ch-c) R07DS1115EJ0201 Rev.2.01 Jul 02, 2015 Min Typ 35 1.1 Max Unit Test Condition degree C/W According to JEDEC JESD51-2, -5, -7 on FR4 2s2p board degree C/W All channel Page 6 of 39 μPD166038T1J Datasheet 3. Specification 3.5 Electrical Characteristics Operation function Tch=-40 to 150degreeC, Vcc=7 to 18V, unless otherwise specified Parameter Operating Voltage Symbol VCC Operating current per channel IGND Output Leakage current per channel IL(off) Min 4.5 Typ Max 28 Unit V 2.2 4 mA Test Condition VIN=4.5V RL=3.4ohm VIN=4.5V 0.5 µA Tch=25°C 3 Standby current ICC(off) 0.5 µA 2 On-state resistance per channel Ron Low level IN pin voltage High level IN pin voltage Low level IN pin current High level IN pin current Clamping IN pin voltage 1) Low level SEN pin voltage High level SEN pin voltage Low level SEN pin current High level SEN pin current Clamping SEN pin voltage1) Under voltage shutdown Under voltage restart Turn on time Turn on delay time Turn off time Turn off delay time Slew rate on Slew rate off Switching drift1) VIL VIH IIL IIH VZIN VSENL VSENH ISENL ISENH VZSEN VCC(Uv) VCC(Cpr) ton td(on) toff td(off) dV/dton -dV/dtoff ton-toff Turn on energy loss 1) Turn off energy loss 1) Driving capability 1) Eon Eoff Dr(capa) mohm 20 48 0.8 2.5 2 2 5 25 25 6 0.8 2.5 2 2 5 25 25 6 4.5 5.0 200 100 200 150 1.5 1.5 +50 -50 0.5 0.5 180 210 1.0 1.0 V V µA µA V V V µA µA V V V µs µs µs µs V/µs V/µs µs mJ mJ mohm VCC=13.5V, VIN=0V, VSEN=0V, VIS=0V, Tch=-40~125°C VOUT=0V, VGND=0V Tch=25°C VCC=13.5V, VIN=0V, VSEN=0V, VIS=0V, Tch=-40~85°C VOUT=0V, VGND=0V Tch=25°C, IL=4.0A Tch=150°C, IL=4.0A VIN=0.8V VIN=2.5V VSEN=0.8V VSEN=2.5V VCC=13.5V, RL=3.4ohm Vcc = 9 to 18V drift from Vcc=13.5V, Tch=-40 to 150degreeC drift from Tch=25degreeC ton; Vout=Vcc-1.5V after input signal active VCC=13.5V,Tch=25°C, RL=3.4ohm Tch=25°C, VCC=8~16V Tch=105°C, VCC=8~16V Remark) All voltages refer to ground pin of the device 1) not subjected production test, guaranteed by design R07DS1115EJ0201 Rev.2.01 Jul 02, 2015 Page 7 of 39 μPD166038T1J Datasheet 3. Specification Protection function Tch=-40 to 150degreeC, Vcc=7 to 18V, unless otherwise specified Parameter Over current detection current Current limitation under power limitation toggling Current limitation under absolute thermal toggling Current limitation trigger threshold during turn-on Current limitation trigger threshold during on-state Absolute thermal shutdown temperature Thermal hysteresis for absolute thermal toggling Power limitation thermal shutdown temperature Power limitation restart temperature Output clamp at inductive load switch off Output current while GND disconnection Output voltage drop at reverse battery condition Symbol IL(SC) Min 47 Typ 75 Max Unit A Test Condition VCC=13.5V, Von=5V, Tch=25°C IL(CL) 33 A VCC=13.5V IL(TT) 25 A VCC=13.5V Von(CL1) 2.0 V VCC=13.5V Von(CL2) 0.8 V VCC=13.5V aTth 150 °C aTth,hys 10 °C dTth 60 °C dTth,rest art Von,clam p IL(GND) 30 °C 30 Vds(rev) 40 V 1 mA 0.9 V 0.7 VCC=13.5V, IL=40mA, Tch=25°C IIN=0A, ISEN=0A, IGND=0A, IIS=0A Tch=25°C Tch=150°C VCC=-13.5V, RL=3.4ohm Remark) All voltages refer to ground pin of the device R07DS1115EJ0201 Rev.2.01 Jul 02, 2015 Page 8 of 39 μPD166038T1J Datasheet 3. Specification Diagnosis function Tch=-40 to 150degreeC, Vcc=7 to 18V, VIN=4.5V, VSEN=4.5V, unless otherwise specified Parameter Current sense ratio Symbol KILIS dKILIS,cal Current sense drift depend on temperature for single point calibration Min 2720 2380 -11.4 Typ 3400 3400 -8.2 -6.5 -4.8 -5.5 Sense current offset current Sense current leakage current Max 4080 5400 13.1 Unit % 7.9 6.0 6.6 7.5 Test Condition IL=4.8A IL=0.9A IL=1.5A Calibration point: IL=2.4A, VCC=13.5V, IL=2.0A Tch=25°C IL=2.4A IL=3A IL=4A Iis,offset 50 µA IL=0A, Tch=25degreeC Iis,dis 1 µA VIN=0V, VSEN=0V VCC=13.5V, RIS=0.67kohm VCC=13.5V, RIS=1kohm VCC=13.5V, RIS=2kohm Iis,fault 3 3.5 3.5 9.5 9 5.5 mA Open load detection threshold at off-state VOUT(OL) 2.0 5.0 V VIN=0V, Tch=-40~105°C OUT terminal current at Open load condition IOUT(OL) -1.0 µA VIN =0V µs VIN=4.5V to 0V, VOUT>VOUT(OL) Sense current under fault condition Open load detection delay after input negative slope tdop 300 Remark) All voltages refer to ground pin of the device R07DS1115EJ0201 Rev.2.01 Jul 02, 2015 Page 9 of 39 μPD166038T1J Datasheet 3. Specification Diagnosis function Tch=-40 to 150degreeC, Vcc=7 to 18V, VIN=4.5V, VSEN=4.5V, unless otherwise specified Parameter Sense current settling time after input signal positive slope Symbol tsis(on) Min Typ Max 250 Unit µs Test Condition VCC=13.5V, VIN=0V to 4.5V, IL/IIS=KILIS, RL=3.4ohm Sense current settling time after input signal negative slope tsis(off) 10 µs VIN=4.5V to 0V Sense current settling time after sense enable during on-state 1) tssen(on) 20 µs VSEN=0V to 4.5V, RL=3.4ohm Sense current settling time after sense disable during on-state 1) tssen(off) 20 µs VSEN=4.5V to 0V, RL=3.4ohm Sense current settling time during on-state 1) tsis(LC) 20 µs RL=3.4ohm to 1.7ohm Fault signal delay after over current detection 1) tdsc(fault) 10 µs VIN=0V to 4.5V, IL=IL(SC) Fault signal delay after power limitation valid 1) tdpl(fault) 10 µs Von>Von(CL1) tdpl(off) 30 µs Von<Von(CL1) tdot(fault) 10 µs IISIIS,fault Fault signal delay after open load detection at offstate 1) tdop(fault) 10 µs VIN=0V, VOUT>VOUT(OL) Fault signal delay after input negative slope 1) tdoff(fault) 10 µs VIN=4.5V to 0V Fault signal delay after power limitation invalid 1) Fault signal delay after absolute thermal shutdown 1) Remark) All voltages refer to ground pin of the device 1) not subjected production test, guaranteed by design R07DS1115EJ0201 Rev.2.01 Jul 02, 2015 Page 10 of 39 μPD166038T1J Datasheet 3. Specification 3.6 Feature Description 3.6.1 Driving Circuit The high-side output is turned on, if the input pin is over VIH. The high-side output is turned off, if the input pin is open or the input pin is below VIL. Threshold is designed between VIH min and VIL max with hysteresis. IN terminal is pulled down with constant current source. VIN IN RESD 0 VOUT IIN Vcc Internal ground OFF ON OFF ON 0 t Switching a resistive load GND Switching lamps VIN VIN 0 0 IL IL 0 0 VOUT VOUT Vcc 0 0 IIS IIS 0 R07DS1115EJ0201 Rev.2.01 Jul 02, 2015 t 0 t Page 11 of 39 μPD166038T1J Datasheet 3. Specification Switching an inductive load VIN 0 IL 0 VOUT Vcc 0 Von,clamp IIS 0 t The dynamic clamp circuit works only when the inductive load is switched off. When the inductive load is switched off, the voltage of OUT falls below 0V. The gate voltage of SW1 is then nearly equal to GND. Next, the voltage at the source of SW1 (= gate of output MOS) falls below the GND voltage. SW1 is turned on, and the clamp diode is connected to the gate of the output MOS, activating the dynamic clamp circuit. When the over-voltage is applied to VCC, the gate voltage and source voltage of SW1 are both nearly equal to GND. SW1 is not turned on, the clamp diode is not connected to the gate of the output MOS, and the dynamic clamp circuit is not activated. VCC RESD IN SEN ZDAZ ZDAZ RESD SW1 logic ZDESD OUT Internal ground GND R07DS1115EJ0201 Rev.2.01 Jul 02, 2015 IS Page 12 of 39 μPD166038T1J Datasheet 3. Specification 3.6.2 Device behavior at over voltage condition In case of supply voltage greater than Vload dump, logic part is clamped by ZDAZ (35V min). And current through of logic part is limited by external ground resistor. In addition, the power transistor switches off in order to protect the load from over voltage. Permanent supply voltage than Vload dump must not be applied to VCC. VCC IN RIN SEN RESD RESD ZDAZ ZDESD N-ch MOSFET logic RSEN ZDAZ ZDESD uC OUT IPD Internal ground GND IS RGND RIS RL 3.6.3 Device behavior at low voltage condition If the voltage supply (VCC) goes down under VCC(Uv), the device outputs shuts down. If voltage supply (VCC) increase over VCC(Cpr), the device outputs turns back on automatically. The device keeps off state after under voltage shutdown. The IS output is cleared during off-state. VIN 0 IL 0 VCC VCC(CPr) VOUT VCC(Uv) 0 t 3.6.4 Loss of Ground protection In case of complete loss of the device ground connection, but connected load ground, the device securely changes to off if VIN was initially greater than VIH state or keeps off state if VIN was initially lower than VIL state. In case of device loss of ground, IN and SEN terminal will/ could/ might be at VCC voltage. R07DS1115EJ0201 Rev.2.01 Jul 02, 2015 Page 13 of 39 μPD166038T1J Datasheet 3. Specification 3.6.5 Short circuit protection Turn-on in an over load condition including short circuit condition The device shuts down automatically when condition (a) is detected. The sense pin output Iis,fault. Shutdown is latched until the next reset via input pin. The device shuts down automatically when condition (b) is detected. The device restarts automatically in power limitation mode. The device shuts down automatically when condition (c) is detected and restarts automatically in absolute thermal toggling mode. The sense pin output Iis,fault during power limitation mode or thermal toggling mode. (a) IL > IL(SC) (b) deltaTch > dTth (c) Tch > aTth Over load condition including short circuit condition during on-state The device runs automatically into power limitation mode when condition (a) is detected once after Von < Von(CL2). The device shuts down automatically when condition (b) is detected. The device restarts automatically in power limitation mode. The device shuts down automatically when condition (c) is detected and restarts automatically in absolute thermal toggling mode. The sense pin output Iis,fault during power limitation mode or thermal toggling mode. (a) Von > Von(CL2) (b) deltaTch > dTth (c) Tch > aTth Power limitation control Current limitation control with IL(CL) when auto restart from deltaTch protection. During the current limitation operation and Von>Von(CL1), the sense pin outputs Iis,fault. Even auto restart from delta Tch protection, if Von<Von(CL1) depends on short circuit impedance condition, the device does not operate as current limitation with IL(CL). In this case, the sense pin output sense current at on-state, Iis,fault at off-state during toggling operation with power limitation mode. Absolute thermal toggling Current limitation control with IL(TT) when auto restart from absolute Tch protection. During the current limitation operation and Von>Von(CL1), the sense pin outputs Iis,fault. Even auto restart from absolute Tch protection, if Von<Von(CL1) depends on short circuit impedance condition, the device does not operate as current limitation with IL(TT). In this case, the sense pin output sense current at on-state, Iis,fault at off-state during toggling operation with thermal toggling mode. delta Tch Junction temperature differences between thermal sensor of power area and thermal sensor of control area. R07DS1115EJ0201 Rev.2.01 Jul 02, 2015 Page 14 of 39 μPD166038T1J Datasheet 3. Specification 3.6.6 Device behavior at reverse current conduction during on-state During on-state(VIN>VIH) the device might shut down automatically when Vout>Vcc+0.3V is detected. And the sense pin outputs Iis,fault if the device shuts down. If restart is required, please reset via input pin when detect the Iis.fault. VCC VCC IN Irev OUT >VIH SEN VIN IS GND >VSENH Vout RIS VIS VSEN VIN 0 VSEN 0 Vcc Vout 0 Iout 0 Irev VIS Iis.fault 0 t R07DS1115EJ0201 Rev.2.01 Jul 02, 2015 Page 15 of 39 μPD166038T1J Datasheet 3. Specification State transition diagram Over current Turn-on Thermal IN -> High Input A IL > IL(SC) No Thermal Yes Tch > Tth Shutdown by latch Von < Von(CL1) No Yes Over current No Shutdown Yes IN = Low C Thermal No IL(lim)=IL(TT) Yes Input Return B Von < Von(CL2) Current limitation No A Yes dTch > dTth Thermal Thermal No Yes Shutdown IL(lim)=IL(CL) IL > IL(lim) Yes No Input IL(lim)=IL(TT) Over current C No Yes IL(lim)=IL(CL) IN = Low No Yes Input C Return Shutting down No Yes IN = Low No Turn-on Yes C Turn-off B Return IL(lim) initial value is power MOSFET saturation current. R07DS1115EJ0201 Rev.2.01 Jul 02, 2015 Page 16 of 39 μPD166038T1J Datasheet 3. Specification Turn-on in an over load condition including short circuit condition (a) IL > IL(SC) Over current Turn-on Thermal IN -> High Input A IL > IL(SC) No Thermal Yes Tch > Tth Shutdown by latch Von < Von(CL1) No Yes Over current No Shutdown Yes IN = Low C Thermal No IL(lim)=IL(TT) Yes Input Return B Von < Von(CL2) Current limitation No A Yes dTch > dTth Thermal Thermal No Yes Shutdown IL(lim)=IL(CL) IL > IL(lim) Yes No Input IL(lim)=IL(TT) Over current C No Yes IL(lim)=IL(CL) IN = Low No Yes Input C Return Shutting down No Yes IN = Low No Before over current detection Yes C Turn-off R07DS1115EJ0201 Rev.2.01 Jul 02, 2015 Turn-on After over current detection Exit from off-latch B Return Page 17 of 39 μPD166038T1J Datasheet 3. Specification Turn-on in an over load condition including short circuit condition (b) deltaTch > dTth Over current Turn-on Thermal IN -> High Input A IL > IL(SC) No Thermal Yes Tch > Tth Shutdown by latch Von < Von(CL1) No Yes Over current No Shutdown Yes IN = Low C Thermal No IL(lim)=IL(TT) Yes Input Return B Von < Von(CL2) Current limitation A No Yes dTch > dTth Thermal Thermal No Yes Shutdown IL(lim)=IL(CL) IL > IL(lim) Yes No Input IL(lim)=IL(TT) Over current C No Yes IL(lim)=IL(CL) IN = Low No Yes Input C Return Shutting down No Yes IN = Low No Before dTcht detection Yes C Turn-off Turn-on During shutdowning by dTth detection During current limit by saturation current B Return Exit from current limitation control R07DS1115EJ0201 Rev.2.01 Jul 02, 2015 Page 18 of 39 μPD166038T1J Datasheet 3. Specification Turn-on in an over load condition including short circuit condition (c) Tch > aTth Over current Turn-on Thermal IN -> High Input A IL > IL(SC) No Thermal Yes Tch > Tth Shutdown by latch Von < Von(CL1) No Yes Over current No Shutdown Yes IN = Low C Thermal No IL(lim)=IL(TT) Yes Input Return B Von < Von(CL2) Current limitation A No Yes dTch > dTth Thermal Thermal No Yes Shutdown IL(lim)=IL(CL) IL > IL(lim) Yes No Input IL(lim)=IL(TT) Over current C No Yes IL(lim)=IL(CL) IN = Low No Yes Input C Return Shutting down No Yes IN = Low No Before aTcht detection Yes C Turn-off Turn-on During shutdowning by aTth detection During current limitation control B Return Exit from power limitation control R07DS1115EJ0201 Rev.2.01 Jul 02, 2015 Page 19 of 39 μPD166038T1J Datasheet 3. Specification An over load condition which is include a short circuit condition during on-state (a) Von > Von(CL) with weak short condition Over current Turn-on Thermal IN -> High Input A IL > IL(SC) No Thermal Yes Tch > Tth Shutdown by latch Von < Von(CL1) No Yes Over current No Shutdown Yes IN = Low C Thermal No IL(lim)=IL(TT) Yes Input Return B Von < Von(CL2) Current limitation A No Yes dTch > dTth Thermal Thermal No Yes Shutdown IL(lim)=IL(CL) IL > IL(lim) Yes No Input IL(lim)=IL(TT) Over current C No Yes IL(lim)=IL(CL) IN = Low No Yes Input C Return Shutting down No Yes IN = Low No Before Von(CL) detection after turn on Yes C Turn-off Turn-on After Von(CL) detection During shutdowning by dTth detection B Return During current limitation control Exit from power limitation control R07DS1115EJ0201 Rev.2.01 Jul 02, 2015 Page 20 of 39 μPD166038T1J Datasheet 3. Specification An over load condition including short circuit condition during on-state (a) Von > Von(CL) with dead condition Over current Turn-on Thermal IN -> High Input A IL > IL(SC) No Thermal Yes Tch > Tth Shutdown by latch Von < Von(CL1) No Yes Over current No Shutdown Yes IN = Low C Thermal No IL(lim)=IL(TT) Yes Input Return B Von < Von(CL2) Current limitation No A Yes dTch > dTth Thermal Thermal No Yes Shutdown IL(lim)=IL(CL) IL > IL(lim) Yes No Input IL(lim)=IL(TT) Over current C No Yes IL(lim)=IL(CL) IN = Low No Yes Input C Return Shutting down No Yes IN = Low No Before Von(CL) detection after turn on Yes C Turn-off Turn-on After Von(CL) detection After over current detection B Return Exit from power limitation control R07DS1115EJ0201 Rev.2.01 Jul 02, 2015 Page 21 of 39 μPD166038T1J Datasheet 3. Specification An over load condition including short circuit condition during on-state (b) deltaTch > dTth Over current Turn-on Thermal IN -> High Input A IL > IL(SC) No Thermal Yes Tch > Tth Shutdown by latch Von < Von(CL1) No Yes Over current No Shutdown Yes IN = Low C Thermal No IL(lim)=IL(TT) Yes Input Return B Von < Von(CL2) Current limitation No A Yes dTch > dTth Thermal Thermal No Yes Shutdown IL(lim)=IL(CL) IL > IL(lim) Yes No Input IL(lim)=IL(TT) Over current C No Yes IL(lim)=IL(CL) IN = Low No Yes Input C Return Shutting down No Yes IN = Low No Turn-on Yes C Turn-off Before dTth detection after turn on During shutdowning by dTth detection B Return Exit from thermal protection control R07DS1115EJ0201 Rev.2.01 Jul 02, 2015 Page 22 of 39 μPD166038T1J Datasheet 3. Specification An over load condition including short circuit condition during on-state (c) Tch > aTth Over current Turn-on Thermal IN -> High Input A IL > IL(SC) No Thermal Yes Tch > Tth Shutdown by latch Von < Von(CL1) No Yes Over current No Shutdown Yes IN = Low C Thermal No IL(lim)=IL(TT) Yes Input Return B Von < Von(CL2) Current limitation No A Yes dTch > dTth Thermal Thermal No Yes Shutdown IL(lim)=IL(CL) IL > IL(lim) Yes No Input IL(lim)=IL(TT) Over current C No Yes IL(lim)=IL(CL) IN = Low No Yes Input C Return Shutting down No Yes IN = Low No Before aTth detection after turn on Yes C Turn-off R07DS1115EJ0201 Rev.2.01 Jul 02, 2015 Turn-on During shutdowning by aTth detection Exit from thermal protection control B Return Page 23 of 39 μPD166038T1J Datasheet 3. Specification 3.6.7 Diagnostic signal Truth table Normal Operation SEN Input Output Diagnostic output 2) H H VCC IIS = IL/KILIS L L 1) < 1uA (Iis,dis) H L 1) L L 1) Shutdown by over current detection Iis,fault 3) < 1uA (Iis,dis) VOUT 6) H Power limitation L Iis,fault 4) L 1) < 1uA (Iis,dis) H Short circuit to VCC Open Load X 8) L Iis,fault 4) in case of Von>Von(CL1) L 1) VOUT 6) Thermal toggling IIS = IL/KILIS in case of Von<Von(CL1) IIS = IL/KILIS in case of Von<Von(CL1) Iis,fault 5) in case of Von>Von(CL1) L 1) Iis, fault 5) L L 1) < 1uA (Iis,dis) H VCC L VOUT H VCC L VOUT X 8) X 8) < 2uA (Iis,offset) 7) Iis,fault in case of VOUT>VOUT(OL) < 2uA (Iis,offset) 7) Iis,fault in case of VOUT>VOUT(OL) < 1uA (Iis,dis) 1) In case of OUT terminal is connected to GND via load. 2) In case of IS terminal is connected to GND via resister. 3) IS terminal keeps Iis,fault as long as input signal activate after the over current detection. 4) IS terminal keeps Iis,fault during power limitation if Von>Von(CL1). 5) IS terminal keeps Iis,fault during thermal toggling if Von>Von(CL1).. 6) VOUT depends on the short circuit condition 7) VOUT depends on the ratio of VCC-OUT-GND resistive component. 8) Don’t care Note: IS terminal output Iis,fault if Von>Von(CL1) within certain time (500us typ.) after turn on. R07DS1115EJ0201 Rev.2.01 Jul 02, 2015 Page 24 of 39 μPD166038T1J Datasheet 3. Specification Current sense output The device output analog feedback current proportional to output current from IS pin. In the case of much higher current than nominal load current, current sense output is saturated. IIS KILIS=IL/IIS IL Sense current under fault condition The device output IIS,fault, constant current, from IS pin under fault condition such as after over current detection, during power limitation and during thermal toggling. IIS,fault is specified with RIS=1kohm condition. IIS,fault is attenuated depends on VCC-VIS voltage. Operation point as IIS,fault output is also depends on RIS condition. For example, In the case of RIS=1kohm, IIS,fault could be 3.5mA to 9mA, VCC-VIS could be 4.5V to 10V, VIS could be 9V to 3.5V if VCC=13.5V. In the case of RIS is higher than 1kohm, Operation point as IIS,fault is lower than specified value but VIS should be higher than RIS=1kohm condition. IIS,fault 1kohm load line VCC 9mA VCC-VIS VCC IS 3.5mA GND VIS VCC-VIS VIS RIS VCC-VIS VCC R07DS1115EJ0201 Rev.2.01 Jul 02, 2015 Page 25 of 39 μPD166038T1J Datasheet 3. Specification Sense current settling time VIN VSEN VOUT tsis(on) tsis(LC) tssen(off) tssen(on) tsis(LC) tsis(off) IIS Fault signal delay time at over current detection VIN VSEN Over current detection VOUT Iis,fault IIS tdsc(fault) R07DS1115EJ0201 Rev.2.01 Jul 02, 2015 Page 26 of 39 μPD166038T1J Datasheet 3. Specification Fault signal delay time at power limitation VIN VSEN Short circuit appear Short circuit disappear Power limitation VOUT tdpl(fault) IIS tdpl(off) Iis,fault Fault signal delay time at Thermal toggling VIN VSEN Short circuit appear Power limitation VOUT Short circuit disappear Thermal toggling tdpl(fault) tdpl(off) Iis,fault IIS tsis(off) R07DS1115EJ0201 Rev.2.01 Jul 02, 2015 Page 27 of 39 μPD166038T1J Datasheet 3. Specification Fault signal delay time at open load detection VIN VSEN Open load condition appear Open load detection Open load detection VOUT Iis,fault tdop tdop(fault) IIS Iis,offset R07DS1115EJ0201 Rev.2.01 Jul 02, 2015 Iis,dis Page 28 of 39 μPD166038T1J Datasheet 3. Specification 3.6.8 Nominal load Product Nominal load 3.4ohm NHD020B 3.6.9 Driving Capability Driving Capability is specified as load impedance including on state resistance in case of this product. Over current detection characteristics is designed below Driving Capability characteristics. If estimated load impedance which comes from peak inrush current is higher than Driving Capability characteristics, this means, the device does not detect inrush current as over current and does not shutdown the output. Depend on the conditions, Power Limitation function may work during inrush current. If estimated load impedance which comes from peak inrush current is higher than Driving Capability characteristics, Power limitation disappear within 30ms. This parameter does not mean that the device can drive the resistive load up to Driving Capability characteristics. VIN IL [A] IL(SC) characteristics t IL(SC) specified point 75 NHD020B: 47A 5 Driving Capability: 13.5 IL Von [V] t 30ms NHD020B:180mΩ R07DS1115EJ0201 Rev.2.01 Jul 02, 2015 Page 29 of 39 μPD166038T1J Datasheet 3. Specification 3.6.10 Cross current protection in case of H-bridge high side usage In case of using High side driver in H-bridge circuit, Vbat High side driver protects High side driver itself and also low side driver from high power dissipation by cross current when low side driver switching on. VCC OFF VCC IN ON IN OUT OUT Cross Motor M current PWM ON current OFF 3.6.11 Measurement condition Switching waveform of OUT terminal VIN ton toff td(on) td(off) 90% 70% VOUT dV/dton 30% 10% R07DS1115EJ0201 Rev.2.01 Jul 02, 2015 90% 70% -dV/dtoff 30% 10% Page 30 of 39 μPD166038T1J Datasheet 3. Specification 3.7 Package drawing 12-pin Power HSSOP R07DS1115EJ0201 Rev.2.01 Jul 02, 2015 Page 31 of 39 μPD166038T1J Datasheet 3. Specification 3.8 Taping information uPD166038T1J 3.9 Marking information uPD166038T1J R07DS1115EJ0201 Rev.2.01 Jul 02, 2015 Page 32 of 39 μPD166038T1J Datasheet 4. Typical characteristics 4. Typical characteristics R07DS1115EJ0201 Rev.2.01 Jul 02, 2015 Page 33 of 39 μPD166038T1J Datasheet 4. Typical characteristics R07DS1115EJ0201 Rev.2.01 Jul 02, 2015 Page 34 of 39 μPD166038T1J Datasheet 4. Typical characteristics R07DS1115EJ0201 Rev.2.01 Jul 02, 2015 Page 35 of 39 μPD166038T1J Datasheet 4. Typical characteristics R07DS1115EJ0201 Rev.2.01 Jul 02, 2015 Page 36 of 39 μPD166038T1J Datasheet 4. Typical characteristics R07DS1115EJ0201 Rev.2.01 Jul 02, 2015 Page 37 of 39 μPD166038T1J Datasheet 5. Thermal characteristics 5. Thermal characteristics R07DS1115EJ0201 Rev.2.01 Jul 02, 2015 Page 38 of 39 μPD166038T1J Datasheet 6. Application example in principle 6. Application example in principle RIN, RSEN, RAN values are in range of 2k to 50kohm depending microcontroller while R_L value is typically 4kohm. If necessary to raise HBM tolerated dose, adding resister between OUT terminal and Ground is effective. Resister’s value is typically 100kohm GND Network recommendation In case of V_loaddump < 35V In case of 35V < V_loaddump < 42V Vbat Vbat VCC VCC GND GND RGND External diode is recommended in order to prevent reverse current toward control logic part at reverse battery condition. External diode and resistor are recommended in order to prevent reverse current toward control logic part at reverse battery condition and limit the current through ZDAZ at load dump condition. 100ohm is recommended as RGND. Note: If other component is installed to prevent reverse current at reverse battery condition, diode is not required in GND Network. Note: Approx. 10kohm additional resistor in parallel with diode is recommended depends on Vf- If performance of the diode. R07DS1115EJ0201 Rev.2.01 Jul 02, 2015 Page 39 of 39 μPD166038T1J Datasheet Revision History Description Rev. 1.00 2.00 2.01 Date Sep. 17, 2013 May 22, 2015 Jul. 01, 2015 Page 1-38 15 16-23 Summary 1st issue "Device behavior at reverse current conduction during on-state" is added. Von(NL) is deleted from State transition diagram. All trademarks and registered trademarks are the property of their respective owners. C-1 Notice 1. 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