GF1A thru GF1M Vishay General Semiconductor Surface Mount Glass Passivated Rectifier FEATURES • Superectifier structure for high reliability condition • Ideal for automated placement SUPERECTIFIER® • Low forward voltage drop • Low leakage current • High forward surge capability • Meets environmental standard MIL-S-19500 • Meets MSL level 1, per J-STD-020, LF maximum peak of 250 °C DO-214BA (GF1) • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC TYPICAL APPLICATIONS For use in general purpose rectification of power supplies, inverters, converters and freewheeling diodes for consumer, automotive and telecommunication. PRIMARY CHARACTERISTICS IF(AV) 1.0 A VRRM 50 V to 1000 V IFSM 30 A VF 1.1 V, 1.2 V IR 5.0 μA TJ max. 175 °C MECHANICAL DATA Case: DO-214BA, molded epoxy over glass body Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Base P/NHE3 - RoHS compliant, AEC-Q101 qualified Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix meets JESD 201 class 2 whisker test Polarity: Color band denotes cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code GF1A GF1B GF1D GF1G GF1J GF1K GF1M GA GB GD GG GJ GK GM UNIT Maximum repetitive peak reverse voltage VRRM 50 100 200 400 600 800 1000 V Maximum RMS voltage VRMS 35 70 140 280 420 560 700 V Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 V Maximum average forward rectified current at TL = 125 °C IF(AV) 1.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 30 A TJ, TSTG - 65 to + 175 °C Operating junction and storage temperature range Document Number: 88617 Revision: 15-Mar-11 For technical questions within your region, please contact one of the following: www.vishay.com [email protected], [email protected], [email protected] 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 GF1A thru GF1M Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS Maximum instantaneous forward voltage 1.0 A SYMBOL GF1A GF1B GF1D VF TA = 25 °C Maximum DC reverse current at rated DC blocking voltage GF1G GF1J GF1K 1.1 GF1M 1.2 UNIT V 5.0 IR TA = 125 °C μA 50 Typical reverse recovery time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A trr 2.0 μs Typical junction capacitance 4.0 V, 1 MHz CJ 15 pF THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Typical thermal resistance (1) GF1A GF1B GF1D GF1G RJA 80 RJL 26 GF1J GF1K GF1M UNIT °C/W Note (1) Thermal resistance from junction to ambient and from junction to lead, PCB mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad areas ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE GF1J-E3/67A 0.104 67A 1500 7" diameter plastic tape and reel GF1J-E3/5CA 0.104 5CA 6500 13" diameter plastic tape and reel GF1JHE3/67A (1) 0.104 67A 1500 7" diameter plastic tape and reel GF1JHE3/5CA (1) 0.104 5CA 6500 13" diameter plastic tape and reel Note (1) AEC-Q101 qualified RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 30 TJ = TJ Max. 8.3 ms Single Half Sine-Wave 60 Hz Resistive or Inductive Load Peak Forward Surge Current (A) Average Forward Rectified Current (A) 1.25 1.00 0.75 0.50 0.25 0 100 P.C.B. Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) Copper Pad Areas 25 20 15 10 5 0 110 120 130 140 150 160 170 180 1 10 100 Lead Temperature (°C) Number of Cycles at 60 Hz Fig. 1 - Forward Current Derating Curve Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current www.vishay.com 2 For technical questions within your region, please contact one of the following: Document Number: 88617 [email protected], [email protected], [email protected] Revision: 15-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 GF1A thru GF1M Vishay General Semiconductor 30 Junction Capacitance (pF) Instantaneous Forward Current (A) 10 1 0.1 Pulse Width = 300 µs 1 % Duty Cycle TJ = 25 °C 0.01 0.4 10 1 0.6 0.8 1.0 1.2 1.4 1 1.6 100 10 Instantaneous Forward Voltage (V) Reverse Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 5 - Typical Junction Capacitance 100 Transient Thermal Impedance (°C/W) 10 Instantaneous Reverse Leakage Current (µA) TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 1 TJ = 100 °C 0.1 TJ = 25 °C 0.01 0 20 40 60 80 10 1 Mounted on 0.2" x 0.27" (5.0 mm x 7.0 mm) Copper Pad Areas 0.1 0.01 100 0.1 1 10 100 Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s) Fig. 4 - Typical Reverse Characteristics Fig. 6 - Typical Transient Thermal Impedance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-214BA (GF1) Cathode Band Mounting Pad Layout 0.066 (1.68) 0.040 (1.02) 0.076 (1.93) MAX. 0.066 (1.68) MIN. 0.187 (4.75) 0.167 (4.24) 0.015 (0.38) 0.0065 (0.17) 0.060 (1.52) MIN. 0.108 (2.74) 0.098 (2.49) 0.118 (3.00) 0.100 (2.54) 0.060 (1.52) 0.030 (0.76) Document Number: 88617 Revision: 15-Mar-11 0.006 (0.152) TYP. 0.220 (5.58) REF. 0.114 (2.90) 0.094 (2.39) 0.226 (5.74) 0.196 (4.98) For technical questions within your region, please contact one of the following: www.vishay.com [email protected], [email protected], [email protected] 3 This datasheet is subject to change without notice. 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