BCD AZ4580P-E1 Dual low noise operational amplifier Datasheet

Data Sheet
DUAL LOW NOISE OPERATIONAL AMPLIFIERS
AZ4580
General Description
Features
The AZ4580 is a monolithic dual low noise operational
amplifier. It is specifically designed for audio systems
to improve tone control; it can also be used in preamplifier, industrial measurement tools and applications where gain and phase matched channels are mandatory.
·
·
Large Signal Voltage Gain: 110dB Typical
Low Input Noise Voltage: 0.7 µVRMS (RIAA)
Typical
·
Wide Gain Bandwidth Product: 15 MHz at
10KHz Typical
Low Distortion: 0.0005% Typical
Slew Rate: 7V/µs Typical
·
·
The IC features internal frequency compensation, low
noise, low distortion, high gain and high bandwidth.
The AZ4580 can operate under dual power supply
voltage up to ±18V or single power supply up to 36V.
Applications
·
·
The AZ4580 is available in DIP-8, SOIC-8, SIP-8 and
TSSOP-8 packages.
Audio AC-3 Decoder System
Audio Amplifier
SOIC-8
DIP-8
SIP-8
TSSOP-8
Figure 1. Package Types of AZ4580
Jul. 2006 Rev. 1. 6
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Data Sheet
DUAL LOW NOISE OPERATIONAL AMPLIFIERS
AZ4580
Pin Configuration
Q Package
(SIP-8)
P/M/G Package
(DIP-8/SOIC-8/TSSOP-8)
8
VCC
7
OUTPUT 2
OUTPUT 1
1
8
VCC
6
INPUT 2-
INPUT 1-
2
7
OUTPUT 2
5
INPUT 2+
INPUT 1+
3
6
INPUT 2-
4
VEE
4
5
INPUT 2+
3
INPUT 1+
2
INPUT 1-
VEE
1
OUTPUT 1
Figure 2. Pin Configuration of AZ4580 (Top View)
Pin Description
Pin No.
Function
Pin No.
Function
Pin No.
Function
Pin No.
Function
1
OUTPUT 1
2
INPUT 1-
3
INPUT 1+
4
VEE
5
INPUT 2+
6
INPUT 2-
7
OUTPUT 2
8
VCC
Jul. 2006 Rev. 1. 6
BCD Semiconductor Manufacturing Limited
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Data Sheet
DUAL LOW NOISE OPERATIONAL AMPLIFIERS
AZ4580
Functional Block Diagram
VCC
-INPUT
OUTPUT
+INPUT
VEE
Figure 3. Representative Schematic Diagram of AZ4580 (Each Amplifier)
Jul. 2006 Rev. 1. 6
BCD Semiconductor Manufacturing Limited
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Data Sheet
DUAL LOW NOISE OPERATIONAL AMPLIFIERS
AZ4580
Ordering Information
AZ4580
Circuit Type
E1: Lead Free
Package
TR: Tape and Reel
M: SOIC-8
P: DIP-8
Q: SIP-8
G: TSSOP-8
Blank: Tube
Package
Temperature
Range
SOIC-8
-40 to 85oC
DIP-8
SIP-8
TSSOP-8
-
Blank: Tin Lead
Part Number
Tin Lead
Marking ID
Lead Free
Tin Lead
Lead Free
Packing Type
AZ4580M
AZ4580M-E1
4580M
4580M-E1
Tube
AZ4580MTR
AZ4580MTR-E1
4580M
4580M-E1
Tape & Reel
-40 to 85oC
AZ4580P
AZ4580P-E1
AZ4580P
AZ4580P-E1
Tube
85oC
AZ4580Q
AZ4580Q-E1
AZ4580Q
AZ4580Q-E1
Tube
-40 to
-40 to 85oC
AZ4580G
AZ4580G-E1
G80
EG80
Tube
AZ4580GTR
AZ4580GTR-E1
G80
EG80
Tape & Reel
BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant.
Jul. 2006 Rev. 1. 6
BCD Semiconductor Manufacturing Limited
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Data Sheet
DUAL LOW NOISE OPERATIONAL AMPLIFIERS
AZ4580
Absolute Maximum Ratings (Note 1)
Parameter
Smbol
Value
VCC
+ 20
VEE
- 20
Input Voltage
VI
±15
V
Differential Input Voltage
VID
±30
V
TJ
150
TSTG
TL
Power Supply Voltage
Operating Junction Temperature
Storage Temperature Range
Lead Temperature (Soldering 10s)
Power Dissipation (TA=25oC)
PD
Unit
V
o
C
-65 to 150
o
C
260
o
C
TSSOP-8
400
SOIC-8
500
SIP-8
750
DIP-8
800
mW
Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the
device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended
periods may affect device reliability.
Recommended Operating Conditions
Parameter
Min
Max
Unit
Supply Voltage
±2
± 18
V
Operating Temperature Range
-40
85
Jul. 2006 Rev. 1. 6
oC
BCD Semiconductor Manufacturing Limited
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Data Sheet
DUAL LOW NOISE OPERATIONAL AMPLIFIERS
AZ4580
Electrical Characteristics
Operating Conditions: VCC=+15V, VEE=- 15V, TA=25oC unless otherwise specified.
Parameter
Conditions
Min
Typ
Max
Unit
4
7
mA
Supply Current
no load
Input Offset Voltage
RS≤10KΩ
0.5
3
mV
Input Offset Current
VCM=0V
5
100
nA
Input Bias Current
VCM=0V
150
500
nA
Input Common Mode Voltage Range
±12
±13.5
V
Common Mode Rejection Ratio
VCM=0V to VCC-1.5V, RS≤10KΩ
80
110
dB
Large Signal Voltage Gain
RL=2KΩ, VO=±10V
90
110
dB
Power Supply Rejection Ratio
RS≤10KΩ
80
110
dB
Output Sink Current
V-=1V, V+=0V, VO=2V
80
mA
Output Source Current
V+=1V, V-=0V, VO=2V
45
mA
Slew Rate
RL≥2KΩ
7
V/µS
Gain Bandwidth Product
RL=2KΩ, f=10KHz
15
MHz
Total Harmonic Distortion
AV=20dB, VO=5V
RL=2KΩ, f=1KHz
0.0005
%
Equivalent Input Noise Voltage
RIAA RS=50Ω, 30KHz LPF
0.7
µVRMS
Jul. 2006 Rev. 1. 6
BCD Semiconductor Manufacturing Limited
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Data Sheet
DUAL LOW NOISE OPERATIONAL AMPLIFIERS
AZ4580
Typical Performance Characteristics
30
120
Maximum Output Voltage Swing (V)
Open Loop Voltage Gain (dB)
110
VCC= 15V, VEE= -15V
100
o
RL=2KΩ, TA=25 C
90
80
70
60
50
40
30
20
25
VCC= 15V, VEE= -15V
20
o
RL=2KΩ, TA=25 C
15
10
5
10
0
100
0
1
10
100
1k
10k
100k
1M
10M
1k
10k
Figure 4. Open Loop Voltage Gain vs. Frequency
1M
10M
Figure 5. Maximum Output Voltage Swing vs. Frequency
20
Equivalent Input Noise Voltage Density
0.5
(nV/(Hz) )
30
28
Maximum Output Voltage Swing (V)
100k
Frequency (Hz)
Frequency (Hz)
26
24
VCC= 15V, VEE= -15V,
22
o
TA=25 C
20
18
16
14
15
VCC= 15V, VEE= -15V
o
RS=50Ω, TA=25 C
10
5
12
0
0.1
1
1
10
Load Resistance (KΩ)
10
100
1k
Frequency (Hz)
Figure 6. Maximum Output Voltage Swing
vs. Load Resistance
Figure 7. Equivalent Input Noise Voltage Density
vs. Frequency
Jul. 2006 Rev. 1. 6
BCD Semiconductor Manufacturing Limited
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Data Sheet
DUAL LOW NOISE OPERATIONAL AMPLIFIERS
AZ4580
Typical Performance Characteristics (Continued)
200
2.0
Input Bias Current (nA)
Input Offset Voltage (mV)
1.5
VCC=15V
VEE=-15V
1.0
0.5
0.0
150
VCC=15V
VEE=-15V
100
50
-0.5
0
-40
-1.0
-25
0
25
50
75
100
125
-20
0
20
40
60
80
100
120
o
Ambient Temperature ( C)
o
Ambient Temperature ( C)
Figure 8. Input Offset Voltage vs.Temperature
Figure 9. Input Bias Current vs.Temperature
Typical Applications
VO
10µF
6.2K
20K
8
6
7
5
+
AZ4580
+
2
1
4
3
D2
15K
20K
20K
20K
10K
D1
VIN
Figure 10. Application of AZ4580 in an AC/DC Converter
Jul. 2006 Rev. 1. 6
BCD Semiconductor Manufacturing Limited
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Data Sheet
DUAL LOW NOISE OPERATIONAL AMPLIFIERS
AZ4580
Typical Applications (Continued)
33µF
+
Phono Cartridge
470
10µF
1/2AZ4580
100pF
-
47K
100K
16K
200K
390
4.7nF
100µF
15nF
Figure11. Application of AZ4580 in a RIAA Preamp
BOOST -BASS-CUT
R1 11K
Vi
R2 100K
R3 11K
C1
0.05µF
C2
0.05µF
R4 11K
C3
0.005µF
R5 3.6K
1/2 AZ4580
+
VO
R6 500K
R7 3.6K
BOOST -TREBLE-CUT
Figure12. Application of AZ4580 in Tone Control
Jul. 2006 Rev. 1. 6
BCD Semiconductor Manufacturing Limited
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Data Sheet
DUAL LOW NOISE OPERATIONAL AMPLIFIERS
AZ4580
Mechanical Dimensions
DIP-8
Unit: mm(inch)
0.700(0.028)
7.620(0.300)TYP
1.524(0.060) TYP
6°
5°
6°
3.200(0.126)
3.600(0.142)
3.710(0.146)
4.310(0.170) 4°
4°
0.510(0.020)MIN
3.000(0.118)
3.600(0.142)
0.204(0.008)
0.360(0.014)
8.200(0.323)
9.400(0.370)
0.254(0.010)TYP
2.540(0.100) TYP
0.360(0.014)
0.560(0.022)
0.130(0.005)MIN
6.200(0.244)
6.600(0.260)
R0.750(0.030)
Φ3.000(0.118)
Depth
0.100(0.004)
0.200(0.008)
9.000(0.354)
9.400(0.370)
Jul. 2006 Rev. 1. 6
BCD Semiconductor Manufacturing Limited
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Data Sheet
DUAL LOW NOISE OPERATIONAL AMPLIFIERS
AZ4580
Mechanical Dimensions (Continued)
SOIC-8
Unit: mm(inch)
4.800(0.189)
5.000(0.197)
7°
0.320(0.013)
1.350(0.053)
1.750(0.069)
8°
8°
7°
0.675(0.027)
0.725(0.029)
D
5.800(0.228)
1.270(0.050)
6.200(0.244)
TYP
D
20:1
0.300(0.012)
R0.150(0.006)
0.100(0.004)
φ 0.800(0.031)
0.200(0.008)
0°
8°
1.000(0.039)
3.800(0.150)
4.000(0.157)
1°
5°
0.330(0.013)
0.510(0.020)
0.900(0.035)
R0.150(0.006)
0.190(0.007)
0.250(0.010)
Jul. 2006 Rev. 1. 6
BCD Semiconductor Manufacturing Limited
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Data Sheet
DUAL LOW NOISE OPERATIONAL AMPLIFIERS
AZ4580
Mechanical Dimensions (Continued)
SIP-8
Unit: mm(inch)
18.900(0.744)
19.400(0.764)
1 PIN INDEX
45
o
6.250(0.246)
7.700(0.303)
8.300(0.327)
6.750(0.266)
1PIN
3.100(0.122)
3.700(0.146)
0.420(0.017)
0.580(0.023)
0.850(0.033)
1.150(0.045)
1.200(0.470)
1.500(0.482)
2.540(0.100) TYP
Jul. 2006 Rev. 1. 6
0.200(0.008)
0.300(0.012)
2.550(0.100)
3.050(0.120)
BCD Semiconductor Manufacturing Limited
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Data Sheet
DUAL LOW NOISE OPERATIONAL AMPLIFIERS
AZ4580
Mechanical Dimensions (Continued)
TSSOP-8
Unit: mm(inch)
SEE DETAIL A
2.900(0.114)
3.100(0.122)
0.050(0.002)
0.150(0.006)
0.090(0.004)
0.200(0.008)
1.200(0.047)
MAX
0.800(0.031)
1.050(0.041)
12 °
TOP & BOTTOM
GAGE PLANE
TYP
6.400(0.252)
4.500(0.177)
R0.090(0.004)
0°
8°
0.650(0.026)
TYP
0.400(0.016)
4.300(0.169)
R0.090(0.004)
0.450(0.018)
0.750(0.030)
SEATING
PLANE
0.190(0.007)
0.300(0.012)
1.000(0.039)
REF
0.250(0.010)
TYP
1.950(0.077)
TYP
DETAIL A
Jul. 2006 Rev. 1. 6
BCD Semiconductor Manufacturing Limited
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