HUR29100, HUR29120 Soft Recovery Behaviour High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diodes Dimensions TO-220AC A C A C C(TAB) A=Anode, C=Cathode, TAB=Cathode VRSM V 1000 1200 HUR29100 HUR29120 Symbol VRRM V 1000 1200 Test Conditions Dim. A B C D E F G H J K L M N Q Inches Min. Max. 0.500 0.580 0.560 0.650 0.380 0.420 0.139 0.161 2.300 0.420 0.100 0.135 0.045 0.070 0.250 0.025 0.035 0.190 0.210 0.140 0.190 0.015 0.022 0.080 0.115 0.025 0.055 Milimeter Min. Max. 12.70 14.73 14.23 16.51 9.66 10.66 3.54 4.08 5.85 6.85 2.54 3.42 1.15 1.77 6.35 0.64 0.89 4.83 5.33 3.56 4.82 0.38 0.56 2.04 2.49 0.64 1.39 Maximum Ratings Unit IFRMS IFAVM TC=115oC; rectangular, d=0.5 35 30 A IFSM TVJ=45oC; tp=10ms (50Hz), sine 200 A 14 mJ 1.2 A EAS IAR o TVJ=25 C; non-repetitive; IAS=11.5A; L=180uH VA=1.25.VR typ.; f=10kHz; repetitive -55...+175 175 -55...+150 TVJ TVJM Tstg Ptot TC=25oC Md mounting torque Weight P1 typical o C 165 W 0.4...0.6 Nm 2 g ©2008 SIRECTIFIER All rights reserved, Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: [email protected] www.sirectifier.com HUR29100, HUR29120 Soft Recovery Behaviour High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diodes Symbol Test Conditions Characteristic Values typ. max. Unit IR TVJ=25oC; VR=VRRM TVJ=150oC; VR=VRRM 250 1 uA mA VF IF=30A; TVJ=150oC TVJ=25oC 1.81 2.75 V RthJC RthCH 0.5 IF=1A; -di/dt=200A/us; VR=30V; TVJ=25oC trr o VR=100V; IF=50A; -diF/dt=100A/us; TVJ=100 C IRM FEATURES * International standard package * Glass passivated chips * Very short recovery time * Extremely low switching losses * Low IRM-values * Soft recovery behaviour * Epoxy meets UL 94V-0 * RoHS compliant P2 APPLICATIONS * Antiparallel diode for high frequency switching devices * Antisaturation diode * Snubber diode * Free wheeling diode in converters and motor control circuits * Rectifiers in switch mode power supplies (SMPS) * Inductive heating * Uninterruptible power supplies (UPS) * Ultrasonic cleaners and welders 0.9 K/W 40 ns 5.5 A ADVANTAGES * Avalanche voltage rated for reliable operation * Soft reverse recovery for low EMI/RFI * Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch ©2008 SIRECTIFIER All rights reserved, Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: [email protected] www.sirectifier.com HUR29100, HUR29120 Soft Recovery Behaviour High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diodes 70 A 60 5 Qr IF 50 TVJ=150°C 50 IRM 40 IF= 60A IF= 30A IF= 15A 2 0 20 1 0 1 2 3 VF V 10 0 100 4 Fig. 1 Forward current IF versus VF 220 ns IRM 0.5 0.0 40 600 A/us 800 1000 -diF/dt TVJ= 100°C IF = 30A V 1.2 ıus tfr tfr 0.8 VFR IF= 60A IF= 30A IF= 15A 160 40 0.4 140 Qr 0 400 80 180 1.0 200 Fig. 3 Peak reverse current IRM versus -diF/dt VFR trr Kf 0 120 TVJ= 100°C VR = 600V 200 1.5 0 A/us 1000 -diF/dt Fig. 2 Reverse recovery charge Qr versus -diF/dt 2.0 IF= 60A IF= 30A IF= 15A 30 20 10 TVJ= 100°C VR = 600V A 4 3 40 TVJ=100°C TVJ= 25°C 30 60 TVJ= 100°C VR = 600V C 80 120 °C 160 120 0 TVJ Fig. 4 Dynamic parameters Qr, IRM versus TVJ 200 400 600 800 1000 A/us -diF/dt Fig. 5 Recovery time trr versus -diF/dt 1 0 0 200 400 0.0 600 A/us 800 1000 diF/dt Fig. 6 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: K/W i 0.1 1 2 3 ZthJC Rthi (K/W) ti (s) 0.502 0.193 0.205 0.0052 0.0003 0.0162 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 t s 1 Fig. 7 Transient thermal resistance junction to case P3 ©2008 SIRECTIFIER All rights reserved, Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: [email protected] www.sirectifier.com