Jing Heng MM1Z5221B 0.5w silicon planar zener diode Datasheet

R
MM1Z5221B TH R U MM1Z5268B
0.5W SILICON PLANAR ZENER DIODES
S E M I C O N D U C T O R
SOD-123
FEATURES
(0.55 +0.05 )
-0.05
0.022"+0.002"
-0.002"
Total power dissipation:max.500 mW
Small plastic package suitable for surface mounted design
Tolerance approximately ±5%
High temperature soldering guaranteed:260℃/10 seconds at terminals
(1.60+0.05 )
-0.05
0.063"+0.002"
-0.002"
(2.65±0.05(
JF
0.104"+0.002
-
Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
(3.8±0.1)
0.150"±0.004"
5°
0.005"(0.135)
MAX
(1.10±0.05)
0.043"±0.002"
MECHANICAL DATA
Case: SOD-123 plastic case
Dimensions in inches and (millimeters)
Weight: Approx. 0.01 gram
ABSOLUTE MAXIMUM RATINGS(LIMITING VALUES) (TA=25 C)
Symbols
Value
Units
500
mW
150
C
Zener current see table "Characteristics"
PD
TJ
TSTG
Power dissipation
Junction temperature
Storage temperature range
C
-55 to+150
ELECTRICAL CHARACTERISTICS (TA=25 C)
Symbols
Thermal resistance junction to ambient
Thermal resistance junction to Lead
Forward voltage at IF=10mA
JINAN JINGHENG ELECTRONICS CO., LTD.
Min
RθJA
RθJL
VF
Typ
Max
C/W
150
C/W
0.9
10-47
Units
340
V
HTTP://WWW.JINGHENGGROUP.COM
MM1Z... SILICON PLANAR ZENER DIODES
Zener Voltage range
Type
MM1Z5221B
MM1Z5222B
MM1Z5223B
MM1Z5224B
MM1Z5225B
MM1Z5226B
MM1Z5227B
MM1Z5228B
MM1Z5229B
MM1Z5230B
MM1Z5231B
MM1Z5232B
MM1Z5233B
MM1Z5234B
MM1Z5235B
MM1Z5236B
MM1Z5237B
MM1Z5238B
MM1Z5239B
MM1Z5240B
MM1Z5241B
MM1Z5242B
MM1Z5243B
MM1Z5245B
MM1Z5246B
MM1Z5247B
MM1Z5248B
MM1Z5249B
MM1Z5250B
MM1Z5251B
MM1Z5252B
MM1Z5253B
MM1Z5254B
MM1Z5255B
MM1Z5256B
MM1Z5257B
MM1Z5258B
MM1Z5259B
MM1Z5260B
MM1Z5261B
MM1Z5262B
MM1Z5263B
MM1Z5264B
MM1Z5265B
MM1Z5266B
MM1Z5267B
MM1Z5268B
1) 2)
Marking
Code
VZNOM
V
mA
V
A4
AB
B4
AC
C4
D4
E4
F4
H4
J4
K4
M4
AD
N4
P4
R4
X4
AE
Y4
Z4
A5
B5
C5
D5
E5
AH
F5
K9
H5
J5
K5
M9
M5
AJ
N5
P5
R5
X5
Y5
Z5
A6
B6
AK
C6
D6
E6
F6
2.4
2.5
2.7
2.8
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.0
6.2
6.8
7.5
8.2
8.7
9.1
10
11
12
13
15
16
17
18
19
20
22
24
25
27
28
30
33
36
39
43
47
51
56
60
62
68
75
82
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
9.5
8.5
7.8
7.4
7
6.6
6.2
5.6
5.2
5
4.6
4.5
4.2
3.8
3.4
3.2
3
2.7
2.5
2.2
2.1
2
1.8
1.7
1.5
2.28…2.52
2.38…2.63
2.57…2.84
2.66…2.94
2.85…3.15
3.14…3.47
3.42…3.78
3.71…4.1
4.09…4.52
4.47…4.94
4.85…5.36
5.32…5.88
5.7…6.3
5.89…6.51
6.46…7.14
7.13…7.88
7.79…8.61
8.27…9.14
8.65…9.56
9.5…10.5
10.45…11.55
11.4…12.6
12.35…13.65
14.25…15.75
15.2…16.8
16.15…17.85
17.1…18.9
18.05…19.95
19…21
20.9…23.1
22.8…25.2
23.75…26.25
25.65…28.35
26.6…29.4
28.5…31.5
31.35…34.65
34.2…37.8
37.05…40.95
40.85…45.15
44.65…49.35
48.45…53.55
53.2…58.8
57…63
58.9…65.1
64.6…71.4
71.25…78.75
77.9…86.1
Dynamic resistance 3)
Reverse leakage
current
rZjt and rZjK at IZK
IZT for VZT
IR
mA
30
30
30
30
29
28
24
23
22
19
17
11
7
7
5
6
8
8
10
17
22
30
13
16
17
19
21
23
25
29
33
35
41
44
49
58
70
80
93
105
125
150
170
185
230
270
330
1,200
1,250
1,300
1,400
1,600
1,600
1,700
1,900
2,000
1,900
1,600
1,600
1,600
1,000
750
500
500
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
700
700
800
900
1,000
1,100
1,300
1,400
1,400
1,600
1,700
2,000
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
μA
100
100
75
75
50
25
15
10
5
5
5
5
5
5
3
3
3
3
3
3
2
1
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
1)VZ is tested with pulses tp=20ms.
2)Nominal Zener voltage is measured with device junction in thermal equilibrium at TL=30°C ± 1ºC.
3)ZZT and ZZK are measured by dividing the AC voltage drop across the device by the AC current applied.The specified limits are for
IZ(AC)=0.1 IZ(DC) with AC frequency = 1 kHZ.
JINAN JINGHENG ELECTRONICS CO., LTD.
10-48
HTTP://WWW.JINGHENGGROUP.COM
at VR
V
1
1
1
1
1
1
1
1
1
2
2
3
3.5
4
5
6
6.5
6.5
7
8
8.4
9.1
9.9
11
12
13
14
14
15
17
18
19
21
21
23
25
27
30
33
36
39
43
46
47
52
56
62
MM1Z... SILICON PLANAR ZENER DIODES
JINAN JINGHENG ELECTRONICS CO., LTD.
10-49
HTTP://WWW.JINGHENGGROUP.COM
MM1Z... SILICON PLANAR ZENER DIODES
I R , leakage current ( μ A )
C , CAPACITANCE ( pF )
1000
100
10
1000
100
10
1
+150ºC
0. 1
0 . 01
+25ºC
0 . 001
-55ºC
0 . 0001
1
1
10
100
0 . 00001
0
10
20
30
40
50
60
70
V Z , NOMINAL ZENER VOLTAGE ( V )
Figure 7 . Typical Capacitance
Figure 8 . Typical Leakage Current
90
100
100
T A = 25°C
I Z , ZENER CURRENT ( mA )
T A = 25°C
I Z , ZENER CURRENT ( mA )
80
V Z , NOMINAL ZENER VOLTAGE ( V )
10
1
0. 1
10
1
0. 1
0 . 01
0
2
4
6
8
10
12
10
V Z , ZENER VOLTAGE ( V )
Figure 9 . Zener Voltage versus Zener Current
( V Z Up to 12V )
JINAN JINGHENG ELECTRONICS CO., LTD.
0 . 01
30
50
70
V Z , ZENER VOLTAGE ( V )
90
Figure 10 . Zener Voltage versus Zener Current
10-50
HTTP://WWW.JINGHENGGROUP.COM
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