Diode Semiconductor Korea GBU25A --- GBU25M VOLTAGE RANGE: 50 --- 1000 V CURRENT: 25.0 A SILICON BRIDGE RECT IFIERS FEATURES GBU Ideal for printed circuit board 22.3± 0.3 Reliable low cos t cons truction utilizing m olded 3.7± 0.35 4 45° - AC + 2.4± 0.2 2.5± 0.2 18.3± 0.5 Mounting pos ition: Any P. TY 2.2± 0.2 .9 R1 94V-O 1.9± 0.3 Plas tic m aterrial has U/L flam m ability clas s ification 3.8± 0.2 18.7± 0.2 7.9± 0.2 plas tic technique 1.2± 0.15 5.0± 0.3 0.5± 0.15 Dimensions in millimeters MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 am bient tem perature unles s otherwis e s pecified. Single phas e,half wave,60 Hz,res is tive or inductive load. For capacitive load,derate by 20%. GBU 25A GBU 25B GBU 25D GBU 25G GBU 25J GBU 25K GBU 25M UNITS Maximum recurrent peak reverse voltage VRRM 50 100 200 400 600 800 1000 V Maximum RMS voltage V R MS 35 70 140 280 420 560 700 V Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 V Maximum average f orw ard Tc=100 output current IF (AV) 25.0 A IF SM 340 A VF 1.0 V 5.0 μA 500.0 mA Peak f orw ard surge current 8.3ms single half -sine-w ave superimposed on rated load Maximum instantaneous f orw ard voltage at 12.5 A Maximum reverse current at rated DC blocking voltage @TA =25 @TA =125 Typical junction capacitance per leg (note 3) Typical thermal resistance per leg Operating junction temperature range Storage temperature range IR CJ 211 94 (note 2) RθJA 21.0 (note 1) RθJC 2.2 TJ - 55 ---- + 150 TSTG - 55 ---- + 150 pF /W N OTE: 1. Unit case m ounted on 3.2x3.2x0.12" thick (6.2x8.2x0.3cm ) AI. Plate. 2. U nits m ounted in f ree air, no heat sink on P.C .B., 0.5x0.5"(12x12m m ) copper pads, 0.375"(9.5m m ) lead length. 3. Measured at 1.0 MH z and applied rev erse v oltage of 4.0 v olts. www.diode.kr GBU25A --- GBU25M Diode Semiconductor Korea FIG.2 -- TYPICAL FORWARD CHARACTERISTIC AVERAGE FORWARD CURRENT, AMPERES 40 35 30 25 20 15 10 5 0 50 0 100 150 TEMPERATURE, INSTANTANEOUS FORWARD CURRENT, AMPERES FIG.1 -- DERATING CURVE FOR OUTPUT RECTIFIED CURRENT INSTANTANEOUS REVERSE CURRENT, MICRO AMPERES DURGE CURRENT 350 TJ =T J max. SINGLE SINE-WAVE (JEDEC METHOD) 280 210 140 70 0 1 10 100 NUMBER OF CYCLES AT 60Hz TJ =25 f=1.0 MHz VSIG=50mVp-p 200 100 10 .1 50-400V 600-1000V 1 4 10 REVERSE VOLTAGE, VOLTS 100 10 T J=25 Pulse W idth =300uS 1 .1 .4 .6 .8 1 1.2 1.4 1.6 INSTANTANEOUS FORWARD VOLTAGE, VOLTS 500 T J= 1 5 0 100 T J= 1 2 5 10 5 0 -4 0 0 V 6 0 0 -1 0 0 0 V 1 .0 0 .1 TJ=25 .0 1 0 20 40 60 80 100 PERCENT OF RATED PEAK REVERSE VOLTAGE FIG.6 -- TYPICAL TRANSIENT THERMAL IMPEDANCE TRANSIENT THERMAL IMPEDANCE, JUNCTION CAPACITANCE, pF FIG.5 -- TYPICAL JUNCTION CAPACITANCE PER LEG 1000 100 FIG.4 -- TYPICAL REVERSE CHARACTERISTIC 100 /W PEAK FORWARD SURGE CURRENT, AMPERES FIG.3 -- MAXIMUM NON-REPETITIVE PEAK FORWARD 1000 10 1 .1 .01 .1 1 10 100 t, HEATING TIME, sec. www.diode.kr