MBR20L100CT thru MBR20L120CT Taiwan Semiconductor CREAT BY ART FEATURES Dual Common Cathode Schottky Rectifier - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition MECHANICAL DATA TO-220AB Case: TO-220AB Molding compound, UL flammability classification rating 94V-0 Base P/N with suffix "G" on packing code - halogen-free Base P/N with prefix "H" on packing code - AEC-Q101 qualified Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test, with prefix "H" on packing code meet JESD 201 class 2 whisker test Polarity: As marked Mounting torque: 5 in-lbs maximum Weight: 1.9 g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted) PARAMETER SYMBOL MBR20L100CT MBR20L120CT UNIT Maximum repetitive peak reverse voltage VRRM 100 120 V Maximum RMS voltage VRMS 70 84 V Maximum DC blocking voltage VDC 100 120 V Maximum average forward rectified current IF(AV) 20 A Peak repetitive forward current (Rated VR, Square Wave, 20KHz) IFRM 20 A Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load IFSM 150 A Peak repetitive reverse surge current (Note 1) IRRM Maximum instantaneous forward voltage (Note 2) IF= 10A, TJ=25℃ IF= 10A, TJ=125℃ IF= 20A, TJ=25℃ IF= 20A, TJ=125℃ Maximum reverse current @ rated VR TJ=25 ℃ TJ=125 ℃ Voltage rate of change (Rated VR) Typical thermal resistance Operating junction temperature range Storage temperature range VF IR 1 MAX TYP MAX 0.72 0.75 0.78 0.83 0.58 0.68 0.63 0.72 0.81 0.85 0.86 0.90 0.67 0.75 0.73 0.80 TYP MAX TYP MAX 1.10 20 1.00 20 μA 1.20 15 1.40 10 mA 10000 dV/dt RθJC TJ TSTG A TYP 2.8 V V/μs 3.0 O C/W - 55 to +150 O C - 55 to +150 O C Note 1: tp = 2.0 μs, 1.0KHz Note 2: Pulse test with PW=300μs, 1% duty cycle Document Number: DS_D1308038 Version: G13 MBR20L100CT thru MBR20L120CT Taiwan Semiconductor CREAT BY ART ORDERING INFORMATION PART NO. MBR20L1xxCT AEC-Q101 PACKING GREEN COMPOUND QUALIFIED Prefix "H" CODE CODE Suffix "G" C0 PACKAGE PACKING TO-220AB 50 / Tube Note 1: "xx" defines voltage from 100V (MBR20L100CT) to 120V (MBR20L120CT) EXAMPLE AEC-Q101 PREFERRED P/N PART NO. MBR20L100CT C0 MBR20L100CT C0 MBR20L100CT C0G MBR20L100CT C0 MBR20L100CTHC0 MBR20L100CT QUALIFIED GREEN COMPOUND PACKING CODE H DESCRIPTION CODE G Green compound C0 AEC-Q101 qualified RATINGS AND CHARACTERISTICS CURVES (TA=25℃ unless otherwise noted) FIG. 2 MAXIMUM FORWARD SURGE CURRENT PER LEG 25 AVERAGE FORWARD A CURRENT (A) MBR20L100CT 20 15 MBR20L120CT 10 5 RESISTIVE OR INDUCTIVELOAD WITH HEATSINK 0 0 25 50 75 100 125 150 PEAK FORWARD SURGE CURRENT (A) FIG.1 FORWARD CURRENT DERATING CURVE 175 8.3ms Single Half Sine Wave JEDEC Method 150 125 100 MBR20L100CT 75 50 MBR20L120CT 25 0 1 10 CASE TEMPERATURE (oC) FIG. 3 TYPICAL FORWARD CHARACTERISTICS PER LEG FIG. 4 TYPICAL REVERSE CHARACTERISTICS PER LEG 100 10000 TJ=125℃ 10 TJ=25℃ 1 MBR20L100CT MBR20L120CT 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 FORWARD VOLTAGE (V) Document Number: DS_D1308038 1 1.1 1.2 REVERSE LEAKAGE CURRENT (uA) FORWARD CURRENT (A) 100 NUMBER OF CYCLES AT 60 Hz TJ=125℃ 1000 100 10 TJ=25℃ 1 0.1 MBR20L100CT MBR20L120CT 0.01 10 20 30 40 50 60 70 80 90 100 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Version: G13 MBR20L100CT thru MBR20L120CT Taiwan Semiconductor CREAT BY ART FIG. 5 TYPICAL JUNCTION CAPACITANCE PER LEG MBR20L100CT MBR20L120CT 1000 100 TRANSIENT THERMAL IMPEDANCE (℃/W) JUNCTION CAPACITANCE (pF) A 10000 FIG. 6 TYPICAL TRANSIENT THERMAL IMPEDANCE PER LEG 1000 f=1.0MHz Vsig=50mVp-p 100 0.1 1 10 100 10 1 0.1 0.01 0.1 1 REVERSE VOLTAGE (V) 10 100 T-PULSE DURATION(s) PACKAGE OUTLINE DIMENSIONS DIM. Unit (mm) Unit (inch) Min Max Min Max A - 10.50 - 0.413 B 2.62 3.44 0.103 0.135 C 2.80 4.20 0.110 0.165 D 0.68 0.94 0.027 0.037 E 3.54 4.00 0.139 0.157 F 14.60 16.00 0.575 0.630 G 13.19 14.79 0.519 0.582 H 2.41 2.67 0.095 0.105 I 4.42 4.76 0.174 0.187 J 1.14 1.40 0.045 0.055 K 5.84 6.86 0.230 0.270 L 2.20 2.80 0.087 0.110 M 0.35 0.64 0.014 0.025 MARKING DIAGRAM P/N = Specific Device Code G = Green Compound YWW = Date Code F = Factory Code Document Number: DS_D1308038 Version: G13 MBR20L100CT thru MBR20L120CT Taiwan Semiconductor CREAT BY ART Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied,to any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or seling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. Document Number: DS_D1308038 Version: G13