TSC MBR20L100CT Dual common cathode schottky rectifier Datasheet

MBR20L100CT thru MBR20L120CT
Taiwan Semiconductor
CREAT BY ART
FEATURES
Dual Common Cathode Schottky Rectifier
- Low power loss, high efficiency
- Guardring for overvoltage protection
- High surge current capability
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
TO-220AB
Case: TO-220AB
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test,
with prefix "H" on packing code meet JESD 201 class 2 whisker test
Polarity: As marked
Mounting torque: 5 in-lbs maximum
Weight: 1.9 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted)
PARAMETER
SYMBOL
MBR20L100CT
MBR20L120CT
UNIT
Maximum repetitive peak reverse voltage
VRRM
100
120
V
Maximum RMS voltage
VRMS
70
84
V
Maximum DC blocking voltage
VDC
100
120
V
Maximum average forward rectified current
IF(AV)
20
A
Peak repetitive forward current
(Rated VR, Square Wave, 20KHz)
IFRM
20
A
Peak forward surge current, 8.3 ms single half
sine-wave superimposed on rated load
IFSM
150
A
Peak repetitive reverse surge current (Note 1)
IRRM
Maximum instantaneous forward voltage (Note 2)
IF= 10A, TJ=25℃
IF= 10A, TJ=125℃
IF= 20A, TJ=25℃
IF= 20A, TJ=125℃
Maximum reverse current @ rated VR
TJ=25 ℃
TJ=125 ℃
Voltage rate of change (Rated VR)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
VF
IR
1
MAX
TYP
MAX
0.72
0.75
0.78
0.83
0.58
0.68
0.63
0.72
0.81
0.85
0.86
0.90
0.67
0.75
0.73
0.80
TYP
MAX
TYP
MAX
1.10
20
1.00
20
μA
1.20
15
1.40
10
mA
10000
dV/dt
RθJC
TJ
TSTG
A
TYP
2.8
V
V/μs
3.0
O
C/W
- 55 to +150
O
C
- 55 to +150
O
C
Note 1: tp = 2.0 μs, 1.0KHz
Note 2: Pulse test with PW=300μs, 1% duty cycle
Document Number: DS_D1308038
Version: G13
MBR20L100CT thru MBR20L120CT
Taiwan Semiconductor
CREAT BY ART
ORDERING INFORMATION
PART NO.
MBR20L1xxCT
AEC-Q101
PACKING
GREEN COMPOUND
QUALIFIED
Prefix "H"
CODE
CODE
Suffix "G"
C0
PACKAGE
PACKING
TO-220AB
50 / Tube
Note 1: "xx" defines voltage from 100V (MBR20L100CT) to 120V (MBR20L120CT)
EXAMPLE
AEC-Q101
PREFERRED P/N
PART NO.
MBR20L100CT C0
MBR20L100CT
C0
MBR20L100CT C0G
MBR20L100CT
C0
MBR20L100CTHC0
MBR20L100CT
QUALIFIED
GREEN COMPOUND
PACKING CODE
H
DESCRIPTION
CODE
G
Green compound
C0
AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(TA=25℃ unless otherwise noted)
FIG. 2 MAXIMUM FORWARD SURGE
CURRENT PER LEG
25
AVERAGE FORWARD A
CURRENT (A)
MBR20L100CT
20
15
MBR20L120CT
10
5
RESISTIVE OR
INDUCTIVELOAD
WITH HEATSINK
0
0
25
50
75
100
125
150
PEAK FORWARD SURGE CURRENT (A)
FIG.1 FORWARD CURRENT DERATING CURVE
175
8.3ms Single Half Sine Wave
JEDEC Method
150
125
100
MBR20L100CT
75
50
MBR20L120CT
25
0
1
10
CASE TEMPERATURE (oC)
FIG. 3 TYPICAL FORWARD CHARACTERISTICS
PER LEG
FIG. 4 TYPICAL REVERSE CHARACTERISTICS
PER LEG
100
10000
TJ=125℃
10
TJ=25℃
1
MBR20L100CT
MBR20L120CT
0.1
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
FORWARD VOLTAGE (V)
Document Number: DS_D1308038
1
1.1 1.2
REVERSE LEAKAGE CURRENT (uA)
FORWARD CURRENT (A)
100
NUMBER OF CYCLES AT 60 Hz
TJ=125℃
1000
100
10
TJ=25℃
1
0.1
MBR20L100CT
MBR20L120CT
0.01
10
20
30
40
50
60
70
80
90
100
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Version: G13
MBR20L100CT thru MBR20L120CT
Taiwan Semiconductor
CREAT BY ART
FIG. 5 TYPICAL JUNCTION CAPACITANCE
PER LEG
MBR20L100CT
MBR20L120CT
1000
100
TRANSIENT THERMAL
IMPEDANCE (℃/W)
JUNCTION CAPACITANCE (pF) A
10000
FIG. 6 TYPICAL TRANSIENT THERMAL IMPEDANCE
PER LEG
1000
f=1.0MHz
Vsig=50mVp-p
100
0.1
1
10
100
10
1
0.1
0.01
0.1
1
REVERSE VOLTAGE (V)
10
100
T-PULSE DURATION(s)
PACKAGE OUTLINE DIMENSIONS
DIM.
Unit (mm)
Unit (inch)
Min
Max
Min
Max
A
-
10.50
-
0.413
B
2.62
3.44
0.103
0.135
C
2.80
4.20
0.110
0.165
D
0.68
0.94
0.027
0.037
E
3.54
4.00
0.139
0.157
F
14.60
16.00
0.575
0.630
G
13.19
14.79
0.519
0.582
H
2.41
2.67
0.095
0.105
I
4.42
4.76
0.174
0.187
J
1.14
1.40
0.045
0.055
K
5.84
6.86
0.230
0.270
L
2.20
2.80
0.087
0.110
M
0.35
0.64
0.014
0.025
MARKING DIAGRAM
P/N
= Specific Device Code
G
= Green Compound
YWW
= Date Code
F
= Factory Code
Document Number: DS_D1308038
Version: G13
MBR20L100CT thru MBR20L120CT
Taiwan Semiconductor
CREAT BY ART
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied,to
any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or seling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
Document Number: DS_D1308038
Version: G13
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