SEMICONDUCTOR TECHNICAL DATA *Motorola preferred devices TRIACS 15 AMPERES RMS 400 thru 800 VOLTS Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required. • Blocking Voltage to 800 Volts • On-State Current Rating of 15 Amperes RMS at 80°C MT2 • Uniform Gate Trigger Currents in Three Modes • High Immunity to dv/dt — 500 V/µs minimum at 125°C • Minimizes Snubber Networks for Protection • Industry Standard TO-220AB Package • High Commutating di/dt — 9.0 A/ms minimum at 125°C MT1 MT2 G CASE 221A-06 (TO-220AB) Style 4 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol VDRM IT(RMS) ITSM I2t PGM PG(AV) TJ Tstg Parameter Peak Repetitive Off-State Voltage, (1) (– 40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open) Value Unit Volts MAC16D MAC16M MAC16N 400 600 800 On-State RMS Current (60 Hz, TC = 80°C) 15 A Peak Non-repetitive Surge Current (One Full Cycle, 60 Hz, TJ = 125°C) 150 A Circuit Fusing Consideration (t = 8.3 ms) 93 A2sec Peak Gate Power (Pulse Width ≤ 1.0 µs, TC = 80°C) 20 Watts Average Gate Power (t = 8.3 ms, TC = 80°C) 0.5 Watts Operating Junction Temperature Range – 40 to +125 °C Storage Temperature Range – 40 to +150 °C Thermal Resistance — Junction to Case Thermal Resistance — Junction to Ambient 2.0 62.5 °C/W Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds 260 °C THERMAL CHARACTERISTICS RθJC RθJA TL (1) VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Preferred devices are Motorola recommended choices for future use and best overall value. REV 1 Motorola Thyristor Device Data 3–67 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Min Typ Max — — — — 0.01 2.0 Peak On-State Voltage* (ITM = ± 21 A Peak) — 1.2 1.6 Continuous Gate Trigger Current (VD = 12 V, RL = 100 Ω) MT2(+), G(+) MT2(+), G(–) MT2(–), G(–) 10 10 10 16 18 22 50 50 50 Hold Current (VD = 12 V, Gate Open, Initiating Current = ±150 mA) — 20 50 Latch Current (VD = 24 V, IG = 50 mA) MT2(+), G(+) MT2(+), G(–) MT2(–), G(–) — — — 33 36 33 50 80 50 Gate Trigger Voltage (VD = 12 V, RL = 100 Ω) MT2(+), G(+) MT2(+), G(–) MT2(–), G(–) 0.5 0.5 0.5 0.75 0.72 0.82 1.5 1.5 1.5 9.0 — — A/ms 500 — — V/µs Symbol Unit OFF CHARACTERISTICS IDRM Peak Repetitive Blocking Current (VD = Rated VDRM, Gate Open) mA TJ = 25°C TJ = 125°C ON CHARACTERISTICS VTM IGT IH IL VGT Volts mA mA mA Volts DYNAMIC CHARACTERISTICS (di/dt)c dv/dt Rate of Change of Commutating Current* See Figure 10. (VD = 400 V, ITM = 6.0 A, Commutating dv/dt = 24 V/µs, Gate Open, TJ = 125°C, f = 250 Hz, No Snubber) CL = 10 µF LL = 40 mH Critical Rate of Rise of Off-State Voltage (VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 125°C) 125 20 120 18 115 α = 30 and 60° 110 α = 90° 105 α = 180° 100 95 α = 120° DC 90 85 80 PAV, AVERAGE POWER (WATTS) TC, CASE TEMPERATURE (°C) *Indicates Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%. DC 180° 120° 16 90° 14 60° 12 10 α = 30° 8 6 4 2 0 2 4 6 8 10 12 IT(RMS), RMS ON-STATE CURRENT (AMP) Figure 1. RMS Current Derating 3–68 14 16 0 0 2 4 6 8 10 12 IT(RMS), ON-STATE CURRENT (AMP) 14 16 Figure 2. On-State Power Dissipation Motorola Thyristor Device Data 1 MAXIMUM @ TJ = 125°C 10 0.1 0.01 0.1 1 10 100 t, TIME (ms) 1 · 104 1000 Figure 4. Thermal Response MAXIMUM @ TJ = 25°C 40 1 I H, HOLD CURRENT (mA) I T, INSTANTANEOUS ON-STATE CURRENT (AMP) TYPICAL AT TJ = 25°C r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 100 0.1 0 0.5 1 1.5 2 2.5 3 3.5 VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) MT2 POSITIVE MT2 NEGATIVE 5 – 40 4 Figure 3. On-State Characteristics 110 125 1 Q2 Q3 Q1 OFF-STATE VOLTAGE = 12 V RL = 140 Ω – 10 20 50 80 TJ, JUNCTION TEMPERATURE (°C) 110 Figure 6. Gate Trigger Current Variation Motorola Thyristor Device Data OFF-STATE VOLTAGE = 12 V RL = 140 Ω VGT, GATE TRIGGER VOLTAGE (VOLT) IGT, GATE TRIGGER CURRENT (mA) 20 50 80 TJ, JUNCTION TEMPERATURE (°C) Figure 5. Hold Current Variation 100 1 – 40 – 10 125 Q1 Q3 Q2 0.5 – 40 – 10 +20 50 80 TJ, JUNCTION TEMPERATURE (°C) 110 125 Figure 7. Gate Trigger Voltage Variation 3–69 dv/dt , CRITICAL RATE OF RISE OF OFF-STATE VOLTAGE (V/µ s) 100 5000 (dv/dt) c , CRITICAL RATE OF RISE OF COMMUTATING VOLTAGE (V/µ s) VD = 800 Vpk TJ = 125°C 4K 3K 2K 1K 0 10 100 1000 RG, GATE TO MAIN TERMINAL 1 RESISTANCE (OHMS) TJ = 125°C tw VDRM 10 f= 1 2 tw 6f I (di/dt)c = TM 1000 20 30 40 50 60 70 80 90 100 (di/dt)c, RATE OF CHANGE OF COMMUTATING CURRENT (A/ms) Figure 8. Critical Rate of Rise of Off-State Voltage (Exponential) Figure 9. Critical Rate of Rise of Commutating Voltage LL 200 VRMS ADJUST FOR ITM, 60 Hz VAC 1N4007 MEASURE I TRIGGER CHARGE CONTROL NON-POLAR CL TRIGGER CONTROL CHARGE 75°C ITM 1 10000 100°C 10 – + 400 V 2 1N914 51 G 1 Note: Component values are for verification of rated (dv/dt)c. See AN1048 for additional information. Figure 10. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Voltage 3–70 Motorola Thyristor Device Data