BC556B, BC557A, B, C, BC558B, C Amplifier Transistors PNP Silicon http://onsemi.com Features • Pb−Free Packages are Available* COLLECTOR 1 MAXIMUM RATINGS Rating Symbol Collector - Emitter Voltage Value VCEO BC556 BC557 BC558 Collector - Base Voltage Vdc VCBO Vdc −80 −50 −30 VEBO −5.0 Vdc IC mAdc ICM −100 −200 Base Current − Peak IBM −200 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5.0 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 12 W mW/°C TJ, Tstg −55 to +150 °C Symbol Max Unit Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W Thermal Resistance, Junction−to−Case RqJC 83.3 °C/W Collector Current − Continuous Collector Current − Peak Operating and Storage Junction Temperature Range 3 EMITTER −65 −45 −30 BC556 BC557 BC558 Emitter - Base Voltage 2 BASE Unit 1 2 TO−92 CASE 29 STYLE 17 3 MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristic Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. BC 55xx AYWW G G BC55x = Device Code x = 6, 7, or 8 A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2005 September, 2005 − Rev. 2 1 Publication Order Number: BC556B/D BC556B, BC557A, B, C, BC558B, C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max −65 −45 −30 − − − − − − −80 −50 −30 − − − − − − −5.0 −5.0 −5.0 − − − − − − − − − − − − −2.0 −2.0 −2.0 − − − −100 −100 −100 −4.0 −4.0 −4.0 − − − 120 120 180 420 − − − 90 150 270 − 170 290 500 120 180 300 − − − 800 220 460 800 − − − − − − −0.075 −0.3 −0.25 −0.3 −0.6 −0.65 − − −0.7 −1.0 − − −0.55 − −0.62 −0.7 −0.7 −0.82 − − − 280 320 360 − − − − 3.0 6.0 − − − 2.0 2.0 2.0 10 10 10 125 125 240 450 − − − − 900 260 500 900 Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = −2.0 mAdc, IB = 0) Collector −Base Breakdown Voltage (IC = −100 mAdc) Emitter −Base Breakdown Voltage (IE = −100 mAdc, IC = 0) Collector−Emitter Leakage Current (VCES = −40 V) (VCES = −20 V) (VCES = −20 V, TA = 125°C) V(BR)CEO BC556 BC557 BC558 V V(BR)CBO BC556 BC557 BC558 V V(BR)EBO BC556 BC557 BC558 V ICES BC556 BC557 BC558 BC556 BC557 BC558 nA mA ON CHARACTERISTICS DC Current Gain (IC = −10 mAdc, VCE = −5.0 V) (IC = −2.0 mAdc, VCE = −5.0 V) (IC = −100 mAdc, VCE = −5.0 V) hFE A Series Device B Series Devices C Series Devices BC557 A Series Device B Series Devices C Series Devices A Series Device B Series Devices C Series Devices Collector −Emitter Saturation Voltage (IC = −10 mAdc, IB = −0.5 mAdc) (IC = −10 mAdc, IB = see Note 1) (IC = −100 mAdc, IB = −5.0 mAdc) VCE(sat) Base −Emitter Saturation Voltage (IC = −10 mAdc, IB = −0.5 mAdc) (IC = −100 mAdc, IB = −5.0 mAdc) VBE(sat) Base−Emitter On Voltage (IC = −2.0 mAdc, VCE = −5.0 Vdc) (IC = −10 mAdc, VCE = −5.0 Vdc) VBE(on) − V V V SMALL−SIGNAL CHARACTERISTICS Current −Gain − Bandwidth Product (IC = −10 mA, VCE = −5.0 V, f = 100 MHz) fT BC556 BC557 BC558 Output Capacitance (VCB = −10 V, IC = 0, f = 1.0 MHz) Noise Figure (IC = −0.2 mAdc, VCE = −5.0 V, RS = 2.0 kW, f = 1.0 kHz, Df = 200 Hz) Small−Signal Current Gain (IC = −2.0 mAdc, VCE = 5.0 V, f = 1.0 kHz) Cob MHz NF BC556 BC557 BC558 dB hfe BC557 A Series Device B Series Devices C Series Devices − 1. IC = −10 mAdc on the constant base current characteristics, which yields the point IC = −11 mAdc, VCE = −1.0 V. http://onsemi.com 2 pF BC556B, BC557A, B, C, BC558B, C BC557/BC558 −1.0 1.5 TA = 25°C −0.9 VCE = −10 V TA = 25°C VBE(sat) @ IC/IB = 10 −0.8 V, VOLTAGE (VOLTS) hFE , NORMALIZED DC CURRENT GAIN 2.0 1.0 0.7 0.5 −0.7 VBE(on) @ VCE = −10 V −0.6 −0.5 −0.4 −0.3 −0.2 0.3 VCE(sat) @ IC/IB = 10 −0.1 0.2 −0.2 −0.5 −1.0 −2.0 −5.0 −10 −20 −50 IC, COLLECTOR CURRENT (mAdc) 0 −0.1 −0.2 −100 −200 1.0 −2.0 TA = 25°C −1.6 −1.2 −0.8 IC = −10 mA IC = −50 mA IC = −200 mA IC = −100 mA IC = −20 mA −0.4 0 −0.02 −55°C to +125°C 1.2 1.6 2.0 2.4 2.8 −10 −20 −0.1 −1.0 IB, BASE CURRENT (mA) −0.2 10 Cib 7.0 TA = 25°C 5.0 Cob 3.0 2.0 1.0 −0.4 −0.6 −1.0 −2.0 −4.0 −6.0 −10 −10 −1.0 IC, COLLECTOR CURRENT (mA) −100 Figure 4. Base−Emitter Temperature Coefficient f, T CURRENT−GAIN − BANDWIDTH PRODUCT (MHz) Figure 3. Collector Saturation Region C, CAPACITANCE (pF) −50 −100 Figure 2. “Saturation” and “On” Voltages θVB , TEMPERATURE COEFFICIENT (mV/ °C) VCE , COLLECTOR−EMITTER VOLTAGE (V) Figure 1. Normalized DC Current Gain −0.5 −1.0 −2.0 −5.0 −10 −20 IC, COLLECTOR CURRENT (mAdc) −20 −30 −40 400 300 200 150 VCE = −10 V TA = 25°C 100 80 60 40 30 20 −0.5 −1.0 −2.0 −3.0 −5.0 −10 −20 −30 −50 VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mAdc) Figure 5. Capacitances Figure 6. Current−Gain − Bandwidth Product http://onsemi.com 3 BC556B, BC557A, B, C, BC558B, C BC556 TJ = 25°C VCE = −5.0 V TA = 25°C −0.8 V, VOLTAGE (VOLTS) hFE , DC CURRENT GAIN (NORMALIZED) −1.0 2.0 1.0 0.5 VBE(sat) @ IC/IB = 10 −0.6 VBE @ VCE = −5.0 V −0.4 −0.2 0.2 VCE(sat) @ IC/IB = 10 0 −0.2 −1.0 −2.0 −5.0 −10 −20 −50 −100 −200 IC, COLLECTOR CURRENT (mA) −0.1 −0.2 −0.5 −50 −100 −200 −5.0 −10 −20 −1.0 −2.0 IC, COLLECTOR CURRENT (mA) Figure 8. “On” Voltage −2.0 θVB, TEMPERATURE COEFFICIENT (mV/ °C) VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 7. DC Current Gain −1.6 −1.2 IC = −10 mA −20 mA −50 mA −100 mA −200 mA −0.8 −0.4 TJ = 25°C 0 −0.02 −0.05 −0.1 −0.2 −0.5 −1.0 −2.0 IB, BASE CURRENT (mA) −5.0 −10 −20 −1.0 −1.4 −1.8 −2.6 −3.0 −0.2 f, T CURRENT−GAIN − BANDWIDTH PRODUCT C, CAPACITANCE (pF) TJ = 25°C Cib 10 8.0 Cob 4.0 2.0 −0.1 −0.2 −0.5 −1.0 −2.0 −5.0 −10 −20 VR, REVERSE VOLTAGE (VOLTS) −0.5 −1.0 −50 −5.0 −10 −20 −2.0 IC, COLLECTOR CURRENT (mA) −100 −200 Figure 10. Base−Emitter Temperature Coefficient 40 6.0 −55°C to 125°C −2.2 Figure 9. Collector Saturation Region 20 qVB for VBE VCE = −5.0 V 500 200 100 50 20 −100 −1.0 −10 IC, COLLECTOR CURRENT (mA) −50 −100 Figure 11. Capacitance Figure 12. Current−Gain − Bandwidth Product http://onsemi.com 4 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) BC556B, BC557A, B, C, BC558B, C 1.0 0.7 0.5 D = 0.5 0.2 0.3 0.2 0.1 0.05 SINGLE PULSE 0.1 0.07 0.05 P(pk) SINGLE PULSE t1 t2 0.03 DUTY CYCLE, D = t1/t2 0.02 0.01 ZqJC(t) = (t) RqJC RqJC = 83.3°C/W MAX ZqJA(t) = r(t) RqJA RqJA = 200°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) − TC = P(pk) RqJC(t) 0.1 0.2 0.5 1.0 2.0 10 5.0 20 50 t, TIME (ms) 100 200 500 1.0k 2.0k 5.0k Figure 13. Thermal Response −200 IC, COLLECTOR CURRENT (mA) 1s 3 ms −100 TA = 25°C −50 The safe operating area curves indicate IC−VCE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 14 is based upon TJ(pk) = 150°C; TC or TA is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided T J(pk) ≤ 150°C. TJ(pk) may be calculated from the data in Figure 13. At high case or ambient temperatures, thermal limitations will reduce the power than can be handled to values less than the limitations imposed by second breakdown. TJ = 25°C BC558 BC557 BC556 −10 −5.0 −2.0 −1.0 BONDING WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT −5.0 −10 −30 −45 −65 −100 VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 14. Active Region − Safe Operating Area http://onsemi.com 5 10 BC556B, BC557A, B, C, BC558B, C DEVICE ORDERING INFORMATION Package Shipping† TO−92 5000 Units / Bulk TO−92 (Pb−Free) 5000 Units / Bulk TO−92 2000 / Ammo Box TO−92 (Pb−Free) 2000 / Ammo Box TO−92 2000 / Ammo Box TO−92 (Pb−Free) 2000 / Ammo Box TO−92 5000 Units / Bulk TO−92 (Pb−Free) 5000 Units / Bulk TO−92 2000 / Tape & Reel TO−92 (Pb−Free) 2000 / Tape & Reel TO−92 2000 / Ammo Box TO−92 (Pb−Free) 2000 / Ammo Box TO−92 5000 Units / Bulk TO−92 (Pb−Free) 5000 Units / Bulk TO−92 2000 / Ammo Box TO−92 (Pb−Free) 2000 / Ammo Box TO−92 2000 / Tape & Reel BC558BRLG TO−92 (Pb−Free) 2000 / Tape & Reel BC558BRL1 TO−92 2000 / Tape & Reel TO−92 (Pb−Free) 2000 / Tape & Reel TO−92 2000 / Ammo Box TO−92 (Pb−Free) 2000 / Ammo Box TO−92 2000 / Ammo Box TO−92 (Pb−Free) 2000 / Ammo Box Device BC556B BC556BG BC556BZL1 BC556BZL1G BC557AZL1 BC557AZL1G BC557B BC557BG BC557BRL1 BC557BRL1G BC557BZL1 BC557BZL1G BC557C BC557CG BC557CZL1 BC557CZL1G BC558BRL BC558BRL1G BC558BZL1 BC558BZL1G BC558CZL1 BC558CZL1G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 6 BC556B, BC557A, B, C, BC558B, C PACKAGE DIMENSIONS TO−92 (TO−226) CASE 29−11 ISSUE AL A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L SEATING PLANE K D X X G J H V C SECTION X−X 1 N DIM A B C D G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 −−− 0.250 −−− 0.080 0.105 −−− 0.100 0.115 −−− 0.135 −−− MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 −−− 6.35 −−− 2.04 2.66 −−− 2.54 2.93 −−− 3.43 −−− STYLE 17: PIN 1. COLLECTOR 2. BASE 3. EMITTER N ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Email: [email protected] N. American Technical Support: 800−282−9855 Toll Free USA/Canada ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 7 For additional information, please contact your local Sales Representative. BC556B/D