NTMSD3P303R2 FETKY™ P−Channel Enhancement−Mode Power MOSFET and Schottky Diode Dual SO−8 Package Features • High Efficiency Components in a Single SO−8 Package • High Density Power MOSFET with Low RDS(on), • • • • http://onsemi.com MOSFET −3.05 AMPERES −30 VOLTS 0.085 W @ VGS = −10 V Schottky Diode with Low VF Independent Pin−Outs for MOSFET and Schottky Die Allowing for Flexibility in Application Use Less Component Placement for Board Space Savings SO−8 Surface Mount Package, Mounting Information for SO−8 Package Provided Pb−Free Package is Available SCHOTTKY DIODE 3.0 AMPERES 30 VOLTS 420 mV @ IF = 3.0 A Applications • DC−DC Converters • Low Voltage Motor Control • Power Management in Portable and Battery−Powered Products, i.e.: A Computers, Printers, PCMCIA Cards, Cellular and Cordless Telephones A MOSFET MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit S Drain−to−Source Voltage Gate−to−Source Voltage − Continuous Thermal Resistance − Junction−to−Ambient (Note 1) Total Power Dissipation @ TA = 25°C Continuous Drain Current @ TA = 25°C Continuous Drain Current @ TA = 70°C Pulsed Drain Current (Note 4) Thermal Resistance − Junction−to−Ambient (Note 2) Total Power Dissipation @ TA = 25°C Continuous Drain Current @ TA = 25°C Continuous Drain Current @ TA = 70°C Pulsed Drain Current (Note 4) Thermal Resistance − Junction−to−Ambient (Note 3) Total Power Dissipation @ TA = 25°C Continuous Drain Current @ TA = 25°C Continuous Drain Current @ TA = 70°C Pulsed Drain Current (Note 4) Operating and Storage Temperature Range Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = −30 Vdc, VGS = −4.5 Vdc, Peak IL = −7.5 Apk, L = 5 mH, RG = 25 ) Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds VDSS VGS −30 "20 V V G RJA PD ID ID IDM 171 0.73 −2.34 −1.87 −8.0 °C/W W A A A RJA PD ID ID IDM 100 1.25 −3.05 −2.44 −12 °C/W W A A A RJA PD ID ID IDM TJ, Tstg 62.5 2.0 −3.86 −3.10 −15 −55 to +150 140 °C/W W A A A °C EAS mJ March, 2006 − Rev. 2 8 2 7 C C 6 D 3 4 D 5 (TOP VIEW) MARKING DIAGRAM & PIN ASSIGNMENT C C D D 8 8 E3P303 AYWW G G 1 SO−8 CASE 751 STYLE 18 1 A A S G E3P303 = Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION TL 260 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Minimum FR−4 or G−10 PCB, Steady State. 2. Mounted onto a 2″ square FR−4 Board (1in sq, 2 oz Cu 0.06″ thick single sided), Steady State. 3. Mounted onto a 2″ square FR−4 Board (1 in sq, 2 oz Cu 0.06″ thick single sided), t ≤ 10 seconds. 4. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2%. © Semiconductor Components Industries, LLC, 2006 1 1 Device Package Shipping† NTMSD3P303R2 SO−8 2500/Tape & Reel NTMSD3P303R2G SO−8 2500/Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: NTMSD3P303R2/D NTMSD3P303R2 SCHOTTKY MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Value Unit Peak Repetitive Reverse Voltage DC Blocking Voltage VRRM VR 30 V Thermal Resistance − Junction−to−Ambient (Note 5) RJA 197 °C/W Thermal Resistance − Junction−to−Ambient (Note 6) RJA 97 °C/W Thermal Resistance − Junction−to−Ambient (Note 7) RJA 62.5 °C/W IO 3.0 A Peak Repetitive Forward Current (Note 7) (Rated VR, Square Wave, 20 kHz, TA = 105°C) IFRM 6.0 A Non−Repetitive Peak Surge Current (Note 7) (Surge Applied at Rated Load Conditions, Half−Wave, Single Phase, 60 Hz) IFSM 30 A Rating Average Forward Current (Note 7) (Rated VR, TA = 100°C) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 5. Minimum FR−4 or G−10 PCB, Steady State. 6. Mounted onto a 2″ square FR−4 Board (1 in sq, 2 oz Cu 0.06″ thick single sided), Steady State. 7. Mounted onto a 2″ square FR−4 Board (1 in sq, 2 oz Cu 0.06″ thick single sided), t ≤ 10 seconds. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) (Note 8) Symbol Characteristic Min Typ Max −30 − − −30 − − − − − − −1.0 −25 − − −100 − − 100 −1.0 − −1.7 3.6 −2.5 − − − 0.063 0.090 0.085 0.125 − 5.0 − Ciss − 520 750 Coss − 170 325 Crss − 70 135 Unit OFF CHARACTERISTICS V(BR)DSS Drain−to−Source Breakdown Voltage (VGS = 0 Vdc, ID = −250 Adc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (VDS = −30 Vdc, VGS = 0 Vdc, TJ = 25°C) (VDS = −30 Vdc, VGS = 0 Vdc, TJ = 125°C) IDSS Gate−Body Leakage Current (VGS = −20 Vdc, VDS = 0 Vdc) IGSS Gate−Body Leakage Current (VGS = +20 Vdc, VDS = 0 Vdc) IGSS Vdc mV/°C Adc nAdc nAdc ON CHARACTERISTICS Gate Threshold Voltage (VDS = VGS, ID = −250 Adc) Temperature Coefficient (Negative) VGS(th) Static Drain−to−Source On−State Resistance (VGS = −10 Vdc, ID = −3.05 Adc) (VGS = −4.5 Vdc, ID = −1.5 Adc) RDS(on) Forward Transconductance (VDS = −15 Vdc, ID = −3.05 Adc) gFS Vdc Mhos DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance (VDS = −24 Vdc, VGS = 0 Vdc, f = 1.0 MHz) 8. Handling precautions to protect against electrostatic discharge are mandatory. http://onsemi.com 2 pF NTMSD3P303R2 MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) (Note 9) Characteristic Symbol Min Typ Max Unit td(on) − 12 22 ns tr − 16 30 td(off) − 45 80 SWITCHING CHARACTERISTICS (Notes 10 & 11) Turn−On Delay Time (VDD = −24 Vdc, ID = −3.05 Adc, VGS = −10 Vdc, RG = 6.0 ) Rise Time Turn−Off Delay Time Fall Time Turn−On Delay Time (VDD = −24 Vdc, ID = −1.5 Adc, VGS = −4.5 Vdc, RG = 6.0 ) Rise Time Turn−Off Delay Time Fall Time Total Gate Charge (VDS = −24 Vdc, VGS = −10 Vdc, ID = −3.05 Adc) Gate−Source Charge Gate−Drain Charge tf − 45 80 td(on) − 16 − tr − 42 − td(off) − 32 − tf − 35 − Qtot − 16 25 ns nC Qgs − 2.0 − Qgd − 4.5 − VSD − − −0.96 −0.78 −1.25 − Vdc trr − 34 − ns ta − 18 − tb − 16 − QRR − 0.03 − BODY−DRAIN DIODE RATINGS (Note 10) Diode Forward On−Voltage (IS = −3.05 Adc, VGS = 0 Vdc) (IS = −3.05 Adc, VGS = 0 Vdc, TJ = 125°C) Reverse Recovery Time (IS = −3.05 Adc, VGS = 0 Vdc, dIS/dt = 100 A/ s) Reverse Recovery Stored Charge C 9. Handling precautions to protect against electrostatic discharge is mandatory. 10. Indicates Pulse Test: Pulse Width = 300 s max, Duty Cycle = 2%. 11. Switching characteristics are independent of operating junction temperature. SCHOTTKY RECTIFIER ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) (Note 12) VF Maximum Instantaneous Forward Voltage IF = 100 mAdc IF = 3.0 Adc IF = 6.0 Adc Maximum Instantaneous Reverse Current Maximum Voltage Rate of Change VR = 30 Vdc VR = 30 Vdc 12. Indicates Pulse Test: Pulse Width = 300 s max, Duty Cycle = 2%. http://onsemi.com 3 IR TJ = 25°C TJ = 125°C Volts 0.28 0.42 0.50 0.13 0.33 0.45 Volts TJ = 25°C TJ = 125°C 250 dV/dt 25 10,000 A mA V/s NTMSD3P303R2 TYPICAL MOSFET ELECTRICAL CHARACTERISTICS −ID, DRAIN CURRENT (AMPS) VGS = −4 V VGS = −4.6 V VGS = −6 V 4 VGS = −4.8 V TJ = 25°C VGS = −3.6 V VGS = −2.8 V VGS = −3.2 V VGS = −5 V 3 2 VGS = −2.6 V 1 0 0.25 0.5 0.75 1 1.25 VGS = −3 V 1.5 1.75 TJ = −55°C 1 1 2 3 4 5 Figure 2. Transfer Characteristics ID = −3.05 A TJ = 25°C 0.4 0.3 0.2 0.1 5 4 6 7 8 0.7 ID = −1.5 A TJ = 25°C 0.6 0.5 0.4 0.3 0.2 0.1 0 2 4 3 5 6 7 −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) Figure 3. On−Resistance vs. Gate−to−Source Voltage Figure 4. On−Resistance vs. Gate−to−Source Voltage 0.25 TJ = 25°C 0.2 VGS = −4.5 V 0.15 VGS = −10 V 0.1 1 TJ = 25°C 2 Figure 1. On−Region Characteristics 0.5 0.05 TJ = 100°C 3 −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) 0.6 3 4 −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 0.7 0 VDS > = −10 V 5 0 2 RDS(on), DRAIN−TO−SOURCE RESISTANCE () RDS(on), DRAIN−TO−SOURCE RESISTANCE () VGS = −4.4 V VGS = −8 V 5 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE () 6 VGS = −10 V 2 3 4 5 6 RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) −ID, DRAIN CURRENT (AMPS) 6 1.6 1.4 ID = −3.05 A VGS = −10 V 1.2 1 0.8 0.6 −50 −25 0 25 50 75 100 125 −ID, DRAIN CURRENT (AMPS) TJ, JUNCTION TEMPERATURE (°C) Figure 5. On−Resistance vs. Drain Current and Gate Voltage Figure 6. On Resistance Variation with Temperature http://onsemi.com 4 150 NTMSD3P303R2 VGS = 0 V VDS = 0 V 1200 C, CAPACITANCE (pF) IDSS, LEAKAGE (nA) 10000 TJ = 150°C 1000 TJ = 125°C 100 VGS = 0 V Ciss 1000 800 Ciss Crss 600 400 Coss 200 10 6 10 14 18 22 26 0 10 30 5 QT 15 6 10 Q2 2 4 6 8 10 12 0 16 14 30 100 td(off) tf tr 10 1 1 100 10 RG, GATE RESISTANCE () Figure 9. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge Figure 10. Resistive Switching Time Variation vs. Gate Resistance 3 VDS = −24 V ID = −1.5 A VGS = −4.5 V tr tf 1 25 Qg, TOTAL GATE CHARGE (nC) 100 10 20 5 ID = −3.05 A TJ = 25°C 0 15 td(on) 2 1000 t, TIME (ns) 20 t, TIME (ns) VDS VGS 0 10 VDS = −24 V ID = −3.05 A VGS = −10 V 25 10 IS, SOURCE CURRENT (AMPS) −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) 30 1000 4 −VDS Figure 8. Capacitance Variation 12 Q1 5 GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 7. Drain−to−Source Leakage Current vs. Voltage 8 0 −VGS −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 10 Crss TJ = 25°C td(off) td(on) 100 VGS = 0 V TJ = 25°C 2.5 2 1.5 1 0.5 0 0.2 0.4 0.6 0.8 1 RG, GATE RESISTANCE () −VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) Figure 11. Resistive Switching Time Variation vs. Gate Resistance Figure 12. Diode Forward Voltage vs. Current http://onsemi.com 5 1.2 NTMSD3P303R2 VGS = 12 V SINGLE PULSE TA = 25°C 10 1.0 ms di/dt 10 ms IS dc 1.0 trr ta 0.1 0.01 1 0.25 IS tp 10 1.0 tb TIME RDS(on) THERMAL LIMIT PACKAGE LIMIT IS 100 −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 13. Maximum Rated Forward Biased Safe Operating Area Figure 14. Diode Reverse Recovery Waveform 1.0 Rthja(t), EFFECTIVE TRANSIENT THERMAL RESPONSE −ID, DRAIN CURRENT (AMPS) 100 D = 0.5 0.2 0.1 0.1 Normalized to RJA at Steady State (1″ pad) Chip Junction 2.32 18.5 50.9 37.1 56.8 0.05 0.02 0.01 1E−03 0.0014 F 0.01 0.0073 F 0.022 F 0.105 F 0.484 F 3.68 F Ambient Single Pulse 1E−02 24.4 1E−01 1E+00 t, TIME (s) Figure 15. FET Thermal Response http://onsemi.com 6 1E+01 1E+02 1E+03 NTMSD3P303R2 10 85°C 25°C −40 °C TJ = 125°C 1.0 0.1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 10 85°C TJ = 125°C 0.1 0 0.1 0.2 0.3 0.4 0.6 0.5 0.7 VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS) Figure 16. Typical Forward Voltage Figure 17. Maximum Forward Voltage IR, MAXIMUM REVERSE CURRENT (AMPS) TJ = 125°C 0.01 85°C 0.001 0.0001 25°C 0.8 0.1 TJ = 125°C 0.01 0.001 25°C 0.0001 0.00001 0.00001 0.000001 0.000001 0 5.0 10 15 20 25 30 0 5.0 VR, REVERSE VOLTAGE (VOLTS) IO , AVERAGE FORWARD CURRENT (AMPS) 100 10 5.0 10 15 20 20 25 30 Figure 19. Maximum Reverse Current 1000 0 15 10 VR, REVERSE VOLTAGE (VOLTS) Figure 18. Typical Reverse Current C, CAPACITANCE (pF) 25°C 1.0 VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 0.1 IR, REVERSE CURRENT (AMPS) IF, INSTANTANEOUS FORWARD CURRENT (AMPS) IF, INSTANTANEOUS FORWARD CURRENT (AMPS) TYPICAL SCHOTTKY ELECTRICAL CHARACTERISTICS 25 30 5.0 dc 4.5 FREQ = 20 kHz 4.0 3.5 SQUARE WAVE 3.0 Ipk/Io = 2.5 Ipk/Io = 5.0 2.0 1.5 Ipk/Io = 10 1.0 Ipk/Io = 20 0.5 0 0 VR, REVERSE VOLTAGE (VOLTS) 20 40 60 80 100 120 TA, AMBIENT TEMPERATURE (°C) Figure 20. Typical Capacitance Figure 21. Current Derating http://onsemi.com 7 140 160 NTMSD3P303R2 PFO , AVERAGE POWER DISSIPATION (WATTS) TYPICAL SCHOTTKY ELECTRICAL CHARACTERISTICS 1.75 dc 1.50 SQUARE WAVE Ipk/Io = 1.25 Ipk/Io = 5.0 1.00 Ipk/Io = 10 0.75 Ipk/Io = 20 0.50 0.25 0 0 2.0 1.0 3.0 5.0 4.0 IO, AVERAGE FORWARD CURRENT (AMPS) Figure 22. Forward Power Dissipation Rthja(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE 1.0 D = 0.5 0.2 0.1 0.1 NORMALIZED TO RJA AT STEADY STATE (1″ PAD) 0.05 0.02 0.1010 CHIP JUNCTION 39.422 F 0.01 0.01 1.2674 27.987 30.936 36.930 493.26 F 0.0131 F 0.2292 F 2.267 F SINGLE PULSE 0.001 1.0E−05 1.0E−04 AMBIENT 1.0E−03 1.0E−02 1.0E−01 t, TIME (s) 1.0E+00 Figure 23. Schottky Thermal Response http://onsemi.com 8 1.0E+01 1.0E+02 1.0E+03 NTMSD3P303R2 PACKAGE DIMENSIONS SOIC−8 NB CASE 751−07 ISSUE AG −X− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. 751−01 THRU 751−06 ARE OBSOLETE. NEW STANDARD IS 751−07. A 8 5 S B 1 0.25 (0.010) Y M M 4 −Y− K MILLIMETERS DIM MIN MAX A 4.80 5.00 B 3.80 4.00 C 1.35 1.75 D 0.33 0.51 G 1.27 BSC H 0.10 0.25 J 0.19 0.25 K 0.40 1.27 M 0_ 8_ N 0.25 0.50 S 5.80 6.20 STYLE 18: PIN 1. ANODE 2. ANODE 3. SOURCE 4. GATE 5. DRAIN 6. DRAIN 7. CATHODE 8. CATHODE G C N X 45 _ SEATING PLANE −Z− H 0.10 (0.004) D 0.25 (0.010) M Z Y S X M J S SOLDERING FOOTPRINT* 1.52 0.060 7.0 0.275 INCHES MIN MAX 0.189 0.197 0.150 0.157 0.053 0.069 0.013 0.020 0.050 BSC 0.004 0.010 0.007 0.010 0.016 0.050 0 _ 8 _ 0.010 0.020 0.228 0.244 4.0 0.155 0.6 0.024 1.270 0.050 SCALE 6:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. FETKY is a trademark of International Rectifier Corporation. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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