NST3904DP6T5G Dual General Purpose Transistor The NST3904DP6T5G device is a spin−off of our popular SOT−23/SOT−323/SOT−563 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−963 six−leaded surface mount package. By putting two discrete devices in one package, this device is ideal for low−power surface mount applications where board space is at a premium. http://onsemi.com Features • • • • • hFE, 100−300 Low VCE(sat), ≤ 0.4 V Reduces Board Space and Component Count NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free and are RoHS Compliant (3) (2) (1) Q1 Q2 (4) (5) (6) NST3904DP6T5G MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 40 Vdc Collector −Base Voltage VCBO 60 Vdc Emitter −Base Voltage VEBO 6.0 Vdc IC 200 mAdc ESD Class 2 B Symbol Max Unit PD 240 1.9 mW mW/°C RqJA 520 °C/W PD 280 2.2 mW mW/°C RqJA 446 °C/W Symbol Max Unit PD 350 2.8 mW mW/°C Device Package Shipping† RqJA 357 °C/W NST3904DP6T5G SOT−963 (Pb−Free) 8000/Tape & Reel PD 420 3.4 mW mW/°C NSVT3904DP6T5G SOT−963 (Pb−Free) 8000/Tape & Reel Thermal Resistance, Junction-to-Ambient (Note 2) RqJA 297 °C/W Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C Collector Current − Continuous Electrostatic Discharge HBM MM 6 Total Device Dissipation TA = 25°C Derate above 25°C (Note 1) Thermal Resistance, Junction-to-Ambient (Note 1) Total Device Dissipation TA = 25°C Derate above 25°C (Note 2) Thermal Resistance, Junction-to-Ambient (Note 2) Characteristic (Dual Heated) (Note 3) Total Device Dissipation TA = 25°C Derate above 25°C (Note 1) Thermal Resistance, Junction-to-Ambient (Note 1) Total Device Dissipation TA = 25°C Derate above 25°C (Note 2) 4 1 2 3 SOT−963 CASE 527AD THERMAL CHARACTERISTICS Characteristic (Single Heated) 5 MARKING DIAGRAM 1 EMG G E = Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR−4 @ 100 mm2, 1 oz. copper traces, still air. 2. FR−4 @ 500 mm2, 1 oz. copper traces, still air. 3. Dual heated values assume total power is sum of two equally powered channels. © Semiconductor Components Industries, LLC, 2014 June, 2014 − Rev. 1 1 Publication Order Number: NST3904DP6/D NST3904DP6T5G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit Collector −Emitter Breakdown Voltage (Note 4) (IC = 1.0 mAdc, IB = 0) V(BR)CEO 40 − Vdc Collector −Base Breakdown Voltage (IC = 10 mAdc, IE = 0) V(BR)CBO 60 − Vdc Emitter −Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO 6.0 − Vdc Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) ICEX − 50 nAdc 40 70 100 60 30 − − 300 − − − − 0.2 0.3 0.65 − 0.85 0.95 OFF CHARACTERISTICS ON CHARACTERISTICS (Note 4) DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 50 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) hFE Collector −Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) VCE(sat) Base −Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) VBE(sat) − Vdc Vdc SMALL− SIGNAL CHARACTERISTICS Current −Gain − Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) fT 200 − MHz Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Cobo − 4.0 pF Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo − 8.0 pF Noise Figure (VCE = 5.0 Vdc, IC = 100 mAdc, RS = 1.0 k W, f = 1.0 kHz) NF − 5.0 dB SWITCHING CHARACTERISTICS Delay Time (VCC = 3.0 Vdc, VBE = − 0.5 Vdc) td − 35 Rise Time (IC = 10 mAdc, IB1 = 1.0 mAdc) tr − 35 Storage Time (VCC = 3.0 Vdc, IC = 10 mAdc) ts − 275 Fall Time (IB1 = IB2 = 1.0 mAdc) tf − 50 ns ns 4. Pulse Test: Pulse Width ≤ 300 ms; Duty Cycle ≤ 2.0%. 400 IC/IB = 10 VCE(sat) = 150°C hFE, DC CURRENT GAIN (V) VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) 0.28 0.23 0.18 25°C 0.13 −55°C 0.08 350 150°C (5.0 V) 300 150°C (1.0 V) 250 25°C (5.0 V) 200 25°C (1.0 V) 150 −55°C (5.0 V) 100 −55°C (1.0 V) 50 0 0.03 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) 1 Figure 1. Collector Emitter Saturation Voltage vs. Collector Current 0.0001 0.1 0.001 0.01 IC, COLLECTOR CURRENT (A) Figure 2. DC Current Gain vs. Collector Current http://onsemi.com 2 1 NST3904DP6T5G 1.1 IC/IB = 10 VBE(on), BASE−EMITTER TURN−ON VOLTAGE (V) VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) 1.1 1.0 0.9 −55°C 0.8 0.7 25°C 0.6 0.5 0.4 150°C 0.9 −55°C 0.8 0.7 25°C 0.6 0.5 0.4 150°C 0.3 0.3 0.0001 0.001 0.01 0.1 0.0001 1 0.1 1 Figure 3. Base Emitter Saturation Voltage vs. Collector Current Figure 4. Base Emitter Turn−On Voltage vs. Collector Current 7.5 Cibo, INPUT CAPACITANCE (pF) 8.0 1.8 IC = 100 mA 1.6 1.4 80 mA 1.2 1.0 0.8 60 mA 0.6 0.2 0 0.01 IC, COLLECTOR CURRENT (A) 2.0 0.4 0.001 IC, COLLECTOR CURRENT (A) 40 mA 20 mA 7.0 6.5 6.0 5.5 Cib 5.0 4.5 4.0 3.5 0.0001 0.001 0.01 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Ib, BASE CURRENT (A) Veb, EMITTER BASE VOLTAGE (V) Figure 5. Saturation Region Figure 6. Input Capacitance 3.0 Cobo, OUTPUT CAPACITANCE (pF) VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) VCE = 2.0 V 1.0 2.5 2.0 1.5 Cob 1.0 0.5 0 5.0 10 15 20 25 Vcb, COLLECTOR BASE VOLTAGE (V) Figure 7. Output Capacitance http://onsemi.com 3 30 4.5 5.0 NST3904DP6T5G PACKAGE DIMENSIONS SOT−963 CASE 527AD ISSUE E X Y D 6 5 4 1 2 3 A HE E C SIDE VIEW TOP VIEW e 6X 6X 6X L2 L NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. DIM A b C D E e HE L L2 MILLIMETERS MIN NOM MAX 0.34 0.37 0.40 0.10 0.15 0.20 0.07 0.12 0.17 0.95 1.00 1.05 0.75 0.80 0.85 0.35 BSC 0.95 1.00 1.05 0.19 REF 0.05 0.10 0.15 b 0.08 X Y BOTTOM VIEW ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. 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