MITSUBISHI IGBT MODULES CM150RX-12A HIGH POWER SWITCHING USE CM150RX-12A ¡IC ................................................................... 150A ¡VCES ............................................................ 600V ¡7pack (3-phase Inverter + Brake) ¡Flatbase Type / Insulated Package / Copper (non-plating) base plate ¡RoHS Directive compliant APPLICATION General purpose Inverters, Servo Amplifiers OUTLINE DRAWING & CIRCUIT DIAGRAM 1.15 0.65 (20.5) LABEL TERMINAL t = 0.8 4-φ5.5 MOUNTING HOLES (20.5) 0.8 (21.14) 6.5 1.2 (102.25) (110) ＊114.06 ＊91.2 ＊95 ＊75.96 ＊79.76 ＊60.72 ＊64.52 136.9 121.7 110 ±0.5 99 94.5 SECTION A 17 13 ＊45.48 ＊49.28 ＊30.24 ＊34.04 0 (7.75) ＊15 ＊18.8 12.5 0.8 (50) 35 10 9 8 7 17 12 6 6 36 5 1 2 3 ＊15.48 ＊11.66 4 (21.14) 0 A 6 12 6.5 12.5 (SCREWING DEPTH) 17 +1 -0.5 ＊34.52 ＊30.72 11 39 50 ±0.5 57.5 62 77.1 17 12 6 12 22 39 13.64 14 (5.4) 7 ＊54.2 34 33 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13 (3) (7.4) (3.81) 1.5 φ2.5 φ2.1 Dimensions in mm 3.5 φ4.3 13.5 20.71 8.5 17 22.86 22.86 TH1(11) NTC P(35) GuP(34) GvP(26) GwP(18) EuP(33) EvP(25) EwP(17) U(1) V(2) W(3) GB(6) EB(5) GuN(30) GvN(22) GwN(14) N(36) EuN(29) EvN(21) EwN(13) φ0.5 Tolerance otherwise specified Division of Dimension Tolerance 0.5 to 3 ±0.2 over 3 to 6 ±0.3 over 6 to 30 ±0.5 over 30 to 120 ±0.8 over 120 to 400 ±1.2 TH2(10) B(4) ＊Pin positions with tolerance 6-M5 NUTS 22.86 CIRCUIT DIAGRAM Jan. 2009 MITSUBISHI IGBT MODULES CM150RX-12A HIGH POWER SWITCHING USE ABSOLUTE MAXIMUM RATINGS INVERTER PART Symbol VCES VGES IC ICRM PC IE (Note.3) IERM(Note.3) (Tj = 25°C, unless otherwise specified) Parameter Collector-emitter voltage Gate-emitter voltage Conditions G-E Short C-E Short DC, TC = 63°C Collector current Pulse Maximum collector dissipation TC = 25°C Emitter current TC = 25°C (Free wheeling diode forward current) Pulse (Note. 1) (Note. 4) (Note. 1, 5) (Note. 1) (Note. 4) Rating 600 ±20 150 300 520 150 300 Unit Rating 600 ±20 75 150 280 600 75 150 Unit Rating –40 ~ +150 –40 ~ +125 2500 ±0 ~ +100 2.5 ~ 3.5 2.5 ~ 3.5 330 Unit V A W A BRAKE PART Symbol VCES VGES IC ICRM PC VRRM(Note.3) IF (Note.3) IFRM(Note.3) Parameter Collector-emitter voltage Gate-emitter voltage Conditions G-E Short C-E Short DC, TC = 70°C Collector current Pulse Maximum collector dissipation TC = 25°C Repetitive peak reverse voltage TC = 25°C Forward current Pulse (Note. 1) (Note. 4) (Note. 1, 5) (Note. 1) (Note. 4) V A W V A MODULE Symbol Tj Tstg Viso — — — — Parameter Junction temperature Storage temperature Isolation voltage Base plate flatness Torque strength Torque strength Weight Conditions Terminals to base plate, f = 60Hz, AC 1 minute (Note. 8) On the centerline X, Y M5 screw Main terminals M5 screw Mounting (Typical) °C Vrms μm N·m g +：convex –：concave – Y + Heat sink side Note. 8: The base plate flatness measurement points are in the following figure. X – + Heat sink side Jan. 2009 2 MITSUBISHI IGBT MODULES CM150RX-12A HIGH POWER SWITCHING USE ELECTRICAL CHARACTERISTICS INVERTER PART Symbol (Tj = 25°C, unless otherwise specified) Parameter Conditions ICES VGE(th) IGES VCE = VCES, VGE = 0V Collector cutoff current Gate-emitter threshold voltage IC = 15mA, VCE = 10V Gate leakage current ±VGE = VGES, VCE = 0V VCE(sat) Collector-emitter saturation voltage Cies Coes Cres QG td(on) tr td(off) tf trr (Note.3) Qrr (Note.3) Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge VEC(Note.3) Emitter-collector voltage Rth(j-c)Q Rth(j-c)R RGint RG (Note. 6) IC = 150A, VGE = 15V IC = 150A, VGE = 15V VCE = 10V VGE = 0V Tj = 25°C Tj = 125°C Chip (Note. 6) VCC = 300V, IC = 150A, VGE = 15V VCC = 300V, IC = 150A VGE = ±15V, RG = 6.2Ω Inductive load (IE = 150A) (Note. 6) IE = 150A, VGE = 0V IE = 150A, VGE = 0V Thermal resistance per IGBT (Note. 1) (Junction to case) per free wheeling diode Internal gate resistance TC = 25°C, per switch External gate resistance Tj = 25°C Tj = 125°C Chip Min. — 5 — — — — — — — — — — — — — — — — — — — — 4.1 Limits Typ. — 6 — 1.7 1.9 1.6 — — — 300 — — — — — 5 2.0 1.95 1.9 — — 0 — Max. 1 7 0.5 2.1 — — 18 2 0.6 — 120 100 350 600 200 — 2.8 — — 0.24 0.46 — 41 Min. — 5 — — — — — — — — — — — — — — — 8.0 Limits Typ. — 6 — 1.7 1.9 1.6 — — — 200 — 2.0 1.95 1.9 — — 0 — Max. 1 7 0.5 2.1 — — 9.3 1.0 0.3 — 1 2.8 — — 0.44 0.85 — 83 Unit mA V μA V nF nC ns μC V K/W Ω BRAKE PART Symbol Parameter Conditions ICES VGE(th) IGES VCE = VCES, VGE = 0V Collector cutoff current Gate-emitter threshold voltage IC = 7.5mA, VCE = 10V Gate leakage current ±VGE = VGES, VCE = 0V VCE(sat) Collector-emitter saturation voltage Cies Coes Cres QG IRRM(Note.3) Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Repetitive peak reverse current VFM(Note.3) Forward voltage drop Rth(j-c)Q Rth(j-c)R RGint RG (Note. 6) IC = 75A, VGE = 15V IC = 75A, VGE = 15V VCE = 10V VGE = 0V Tj = 25°C Tj = 125°C Chip (Note. 6) VCC = 300V, IC = 75A, VGE = 15V VR = VRRM (Note. 6) IF = 75A IF = 75A per IGBT Thermal resistance (Note. 1) per Clamp diode (Junction to case) TC = 25°C Internal gate resistance External gate resistance Tj = 25°C Tj = 125°C Chip Unit mA V μA V nF nC mA V K/W Ω Jan. 2009 3 MITSUBISHI IGBT MODULES CM150RX-12A HIGH POWER SWITCHING USE NTC THERMISTOR PART Symbol R ΔR/R B(25/50) P25 Parameter Conditions Zero power resistance Deviation of resistance B constant Power dissipation TC = 25°C TC = 100°C, R100 = 493Ω Approximate by equation TC = 25°C (Note. 7) Min. 4.85 –7.3 — — Limits Typ. 5.00 — 3375 — Max. 5.15 +7.8 — 10 Min. Limits Typ. Max. — 0.015 — Unit kΩ % K mW MODULE Symbol Rth(c-f) Parameter Conditions Contact thermal resistance Thermal grease applied (Note. 1) per 1 module (Case to fin) (Note. 2) Unit K/W Dimensions in mm (tolerance: ±1mm) 89.3 89.6 (Di/WN) 96.4 97.8 99.7 55.3 (Di/VN) 55.8 0 LABEL SIDE 44.8 (Di/VP) 45.3 22.6 23.1 (Di/UP) 33.6 (Di/UN) 34.1 Chip Location (Top view) 79.1 (Di/WP) 79.6 Note.1: Case temperature (TC), heat sink temperature (Tf) measured point is just under the chips. (Refer to the figure of the chip location.) 2: Typical value is measured by using thermally conductive grease of λ = 0.9W/(m·K). 3: IE, IERM, VEC, trr and Qrr represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (FWDi). IF, IFRM, VF, VRRM and IRRM represent ratings and characteristics of the Clamp diode of Brake part. 4: Pulse width and repetition rate should be such that the device junction temperature (Tj) dose not exceed Tjmax rating. 5: Junction temperature (Tj) should not increase beyond 150°C. 6: Pulse width and repetition rate should be such as to cause negligible temperature rise. (Refer to the figure of the test circuit for VCE(sat) and VEC) 1 7: B(25/50) = In( R25 )/( 1 ) T50 R50 T25 R25: resistance at absolute temperature T25 [K]; T25 = 25 [°C]+273.15 = 298.15 [K] R50: resistance at absolute temperature T50 [K]; T50 = 50 [°C]+273.15 = 323.15 [K] 0 0 (50) (62) (77.1) 34 33 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13 20.6 26.0 29.4 35.4 35 Tr UP Di UP Tr UN Di UN Di Tr Br WP T r Th D i WN WP D i WN T r Br Tr VP T r D i VN VP D i VN 36 1 2 3 12 17.3 11 10 9 26.8 8 7 6 41.4 5 4 (110) (121.7) (136.9) Each mark points the center position of each chip. Tr**: IGBT, Di**: FWDi (DiBr: Clamp diode), Th: NTC thermistor Jan. 2009 4 MITSUBISHI IGBT MODULES CM150RX-12A HIGH POWER SWITCHING USE P V VGE = 15V P U B VGE = 0V IC GuP P GuP EuP EuP U VGE = 0V VGE = 15V GuN IC GuN EuN VGE = 15V V N EuN IC GB V N EB N P side Inverter part Tr (example of U arm) VGE = 0V(GvP-EvP, GwP-EwP, GvN-EvN, GwN-EwN, GB-EB) N side Inverter part Tr (example of U arm) VGE = 0V(GvP-EvP, GwP-EwP, GvN-EvN, GwN-EwN, GB-EB) Br Tr VGE = 0V(GuP-EuP, GvP-EvP, GwP-EwP, GuN-EuN, GvN-EvN, GwN-EwN) VCE(sat) test circuit P V P VGE = 0V VGE = 0V IE GuP P V GuP EuP IF EuP B U U VGE = 0V VGE = 0V GuN GuN EuN EuN IE VGE = 0V V GB EB N N N N side Inverter part Di (example of U arm) VGE = 0V(GvP-EvP, GwP-EwP, GvN-EvN, GwN-EwN, GB-EB) P side Inverter part Di (example of U arm) VGE = 0V(GvP-EvP, GwP-EwP, GvN-EvN, GwN-EwN, GB-EB) Br Di VGE = 0V(GuP-EuP, GvP-EvP, GwP-EwP, GuN-EuN, GvN-EvN, GwN-EwN) VEC/VFM test circuit Arm VGE IE IE 90% 0V 0% trr Load –VGE + VCC IC 0A 90% +VGE 0V RG VGE –VGE t VCE Irr IC 10% 0A td(on) tr td(off) Switching time test circuit and waveforms 1/2 ✕ Irr Qrr = 1/2 ✕ Irr ✕ trr tf trr, Qrr test waveform Jan. 2009 5 MITSUBISHI IGBT MODULES CM150RX-12A HIGH POWER SWITCHING USE PERFORMANCE CURVES COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) Inverter part Tj = 25°C 12 13 250 200 11 150 100 10 50 0 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 15 VGE = 20V 9 8 0 1 2 3 4 5 6 7 8 9 10 VGE = 15V 3 2.5 2 1.5 1 0.5 0 Tj = 25°C Tj = 125°C 0 50 100 150 200 250 COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) Inverter part FREE WHEELING DIODE FORWARD CHARACTERISTICS (TYPICAL) Inverter part 10 8 6 4 IC = 150A IC = 300A 2 7 5 3 2 102 7 5 3 2 IC = 60A 0 6 8 10 12 14 16 18 101 20 0 0.5 1 1.5 2 Tj = 25°C Tj = 125°C 2.5 3 3.5 4 GATE-EMITTER VOLTAGE VGE (V) EMITTER-COLLECTOR VOLTAGE VEC (V) CAPACITANCE CHARACTERISTICS (TYPICAL) Inverter part HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) Inverter part SWITCHING TIME (ns) 103 7 5 3 2 Cies 101 7 5 3 2 100 Coes 7 5 3 2 10–1 300 103 Tj = 25°C 102 CAPACITANCE (nF) 3.5 COLLECTOR-EMITTER VOLTAGE VCE (V) EMITTER CURRENT IE (A) COLLECTOR CURRENT IC (A) 300 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) OUTPUT CHARACTERISTICS (TYPICAL) Inverter part 7 5 td(off) 2 102 7 td(on) 5 101 101 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 Conditions: VCC = 300V VGE = ±15V RG = 6.2Ω Tj = 125°C Inductive load 3 2 Cres VGE = 0V tf 3 tr 2 3 5 7 102 2 3 5 7 103 COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER VOLTAGE VCE (V) Jan. 2009 6 MITSUBISHI IGBT MODULES CM150RX-12A HIGH POWER SWITCHING USE HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) Inverter part HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) Inverter part 101 7 7 SWITCHING LOSS (mJ/pulse) 103 SWITCHING TIME (ns) 5 3 tf 2 td(off) 102 7 5 Conditions: VCC = 300V VGE = ±15V IC = 150A Tj = 125°C Inductive load td(on) tr 3 2 101 0 10 2 3 5 7 101 2 2 Err 100 7 3 2 Conditions: 100 VCC = 300V 7 5 VGE = ±15V 3 IC, IE = 150A 2 Tj = 125°C Inductive load 10–1 0 10 2 3 5 7 101 lrr (A), trr (ns) Eoff 7 5 3 2 5 7 102 2 3 5 7 103 7 5 Err 3 2 2 101 1 10 5 7 102 3 GATE RESISTANCE RG (Ω) 3 5 7 102 2 3 5 7 103 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 100 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j–c) IC = 150A VCC = 200V 15 VCC = 300V 10 5 100 2 EMITTER CURRENT IE (A) GATE CHARGE CHARACTERISTICS (TYPICAL) Inverter part GATE-EMITTER VOLTAGE VGE (V) 3 REVERSE RECOVERY CHARACTERISTICS OF FREE WHEELING DIODE (TYPICAL) Inverter part 103 7 Conditions: VCC = 300V 5 VGE = ±15V 3 RG = 6.2Ω Tj = 25°C 2 Inductive load Irr 102 trr Eon 0 2 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) Inverter part 101 0 Conditions: VCC = 300V VGE = ±15V RG = 6.2Ω Tj = 125°C Inductive load 5 COLLECTOR CURRENT IC (A) EMITTER CURRENT IE (A) 7 5 3 2 20 Eon 3 GATE RESISTANCE RG (Ω) 102 SWITCHING LOSS (mJ/pulse) 5 10–1 1 10 5 7 102 3 Eoff 200 300 400 500 7 Single pulse 5 TC = 25°C 3 2 10–1 7 5 3 2 10–2 7 5 Inverter IGBT part : Per unit base = Rth(j–c) = 0.24K/W 3 Inverter FWDi part : Per unit base = Rth(j–c) = 0.46K/W : Per unit base = Rth(j–c) = 0.44K/W 2 Brake IGBT part Brake Clamp-Di part : Per unit base = Rth(j–c) = 0.85K/W 10–3 10–52 3 5710–42 3 5710–32 3 5710–22 3 5710–12 3 57 100 2 3 57 101 600 GATE CHARGE QG (nC) TIME (s) Jan. 2009 7 MITSUBISHI IGBT MODULES CM150RX-12A HIGH POWER SWITCHING USE CLAMP DIODE FORWARD CHARACTERISTICS (TYPICAL) Brake part 103 3.5 VGE = 15V 3 FORWARD CURRENT IF (A) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) Brake part 2.5 2 1.5 1 0.5 0 Tj = 25°C Tj = 125°C 0 25 50 75 100 125 7 5 3 2 102 7 5 3 2 101 7 5 3 2 100 150 Tj = 25°C Tj = 125°C 0 0.5 1 1.5 2 2.5 3 3.5 4 FORWARD VOLTAGE VF (V) COLLECTOR CURRENT IC (A) Jan. 2009 8