DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D302 BZA462A Quadruple ESD transient voltage suppressor Product specification Supersedes data of 1998 Oct 30 1999 May 25 Philips Semiconductors Product specification Quadruple ESD transient voltage suppressor FEATURES BZA462A PINNING • ESD rating >15 kV, according to IEC1000-4-2 PIN DESCRIPTION • SOT457 surface mount package 1 cathode 1 • Common anode configuration 2 common • Non-clamping range −0.5 to 6.2 V 3 cathode 2 • Maximum reverse peak power dissipation: 24 W at tp = 1 ms 4 cathode 3 • Maximum clamping voltage at peak pulse current: 9 V at IZSM = 2.66 A. 5 common 6 cathode 4 APPLICATIONS handbook, halfpage 6 • Computers and peripherals 5 4 1 • Audio and video equipment 3 2 • Communication systems 4 5 • Medical equipment. 6 1 2 3 Top view DESCRIPTION Monolithic transient voltage suppressor diode in a six lead SOT457 (SC-74) package for 4-bit wide ESD transient suppression at 6.2 V level. MAM357 Marking code: Z2t. Fig.1 Simplified outline (SOT457) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per diode IZ working current Ts = 60 °C; note 1 − note 2 mA IF continuous forward current Ts = 60 °C − 100 mA IFSM non-repetitive peak forward current tp = 1 ms; square pulse − 3.75 A IZSM non-repetitive peak reverse current tp = 1 ms; square pulse; see Fig.2 − 2.66 A Ptot total power dissipation Ts = 60 °C; see Fig.3 − 720 mW PZSM non repetitive peak reverse power dissipation square pulse; tp = 1 ms; see Fig.4 − 24 W Tstg storage temperature −65 +150 °C Tj junction temperature −65 +150 °C Notes 1. Ts is the temperature at the soldering point of the anode pin. 2. DC working current limited by Ptot max. 1999 May 25 2 Philips Semiconductors Product specification Quadruple ESD transient voltage suppressor BZA462A THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER CONDITIONS thermal resistance from junction to soldering point VALUE UNIT 125 K/W one or more diodes loaded ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Per diode VZ working voltage IZ = 1 mA 5.89 6.2 6.51 V VF forward voltage IF = 200 mA − − 1.3 V VZSM non-repetitive peak reverse voltage IZSM = 3.5 A; tp = 1 ms − − 9 V IR reverse current VR = 4 V − − 700 nA rdif differential resistance IZ = 1 mA − − 300 Ω SZ temperature coefficient of working voltage IZ = 5 mA − 1.2 − mV/K Cd diode capacitance see Fig.5 VR = 0; f = 1 MHz − − 200 pF VR = 4 V; f = 1 MHz − − 110 pF 1999 May 25 3 Philips Semiconductors Product specification Quadruple ESD transient voltage suppressor MBK479 10 BZA462A MDA198 1000 Ptot handbook, halfpage handbook, halfpage (mW) 800 600 IZSM (A) 400 200 1 10−1 1 0 10 tp (ms) 0 50 100 150 Ts (oC) 200 All diodes loaded. Fig.2 Maximum non-repetitive peak reverse current as a function of pulse time. Fig.3 Power derating curve. MBK481 102 handbook, halfpage MBK480 200 Cd handbook, halfpage (pF) 160 PZSM (W) 120 10 80 40 1 10−1 0 1 tp (ms) 0 10 1 2 3 4 5 6 VR (V) PZSM = VZSM × IZSM. VZSM is the non-repetitive peak reverse voltage at IZSM. Tj = 25 °C; f = 1 MHz. Fig.4 Maximum non-repetitive peak reverse power dissipation as a function of pulse duration (square pulse). 1999 May 25 Fig.5 4 Diode capacitance as a function of reverse voltage; typical values. Philips Semiconductors Product specification Quadruple ESD transient voltage suppressor ESD TESTER RZ 450 Ω RG 223/U 50 Ω coax CZ BZA462A DIGITIZING OSCILLOSCOPE 10× ATTENUATOR 50 Ω note 1 Note 1: attenuator is only used for open socket high voltage measurements IEC 1000-4-2 network CZ = 150 pF; RZ = 330 Ω 1/4 BZA462A vertical scale = 100 V/Div horizontal scale = 50 ns/Div vertical scale = 10 V/Div horizontal scale = 50 ns/Div GND GND unclamped +1 kV ESD voltage waveform (IEC 1000−4−2 network) clamped +1 kV ESD voltage waveform (IEC 1000−4−2 network) GND GND vertical scale = 100 V/Div horizontal scale = 50 ns/Div unclamped −1 kV ESD voltage waveform (IEC 1000−4−2 network) vertical scale = 10 V/Div horizontal scale = 50 ns/Div clamped −1 kV ESD voltage waveform (IEC 1000−4−2 network) Fig.6 ESD clamping test set-up and waveforms. 1999 May 25 5 MBK478 Philips Semiconductors Product specification Quadruple ESD transient voltage suppressor BZA462A APPLICATION INFORMATION Typical common anode application A quadruple transient suppressor in a SOT457 package makes it possible to protect four separate lines using only one package. Two simplified examples are shown in Figs 7 and 8. handbook, full pagewidth keyboard, terminal, printer, etc. A B C D I/O FUNCTIONAL DECODER BZA462A GND MBK476 Fig.7 Computer interface protection. VDD handbook, full pagewidth VGG address bus RAM I/O ROM data bus CPU CLOCK control bus BZA462A GND MBK477 Fig.8 Microprocessor protection. 1999 May 25 6 Philips Semiconductors Product specification Quadruple ESD transient voltage suppressor Device placement and printed-circuit board layout Circuit board layout is of extreme importance in the suppression of transients. The clamping voltage of the BZA462A is determined by the peak transient current and the rate of rise of that current (di/dt). Since parasitic inductances can further add to the clamping voltage (V = L di/dt) the series conductor lengths on the printed-circuit board should be kept to a minimum. This includes the lead length of the suppression element. In addition to minimizing conductor length the following printed-circuit board layout guidelines are recommended: 1. Place the suppression element close to the input terminals or connectors. 2. Keep parallel signal paths to a minimum. 3. Avoid running protection conductors in parallel with unprotected conductors. 4. Minimize all printed-circuit board loop areas including power and ground loops. 5. Minimize the length of the transient return path to ground. 6. Avoid using shared transient return paths to a common ground point. 1999 May 25 7 BZA462A Philips Semiconductors Product specification Quadruple ESD transient voltage suppressor BZA462A PACKAGE OUTLINE Plastic surface mounted package; 6 leads SOT457 D E B y A HE 6 X v M A 4 5 Q pin 1 index A A1 1 2 bp e c 3 Lp w M B detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 bp c D E e HE Lp Q v w y mm 1.1 0.9 0.1 0.013 0.40 0.25 0.26 0.10 3.1 2.7 1.7 1.3 0.95 3.0 2.5 0.6 0.2 0.33 0.23 0.2 0.2 0.1 OUTLINE VERSION SOT457 1999 May 25 REFERENCES IEC JEDEC EIAJ SC-74 8 EUROPEAN PROJECTION ISSUE DATE 97-02-28 Philips Semiconductors Product specification Quadruple ESD transient voltage suppressor BZA462A DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1999 May 25 9 Philips Semiconductors Product specification Quadruple ESD transient voltage suppressor NOTES 1999 May 25 10 BZA462A Philips Semiconductors Product specification Quadruple ESD transient voltage suppressor NOTES 1999 May 25 11 BZA462A Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 115002/00/03/pp12 Date of release: 1999 May 25 Document order number: 9397 750 05926