CYStech Electronics Corp. Spec. No. : C316FP Issued Date : 2010.09.23 Revised Date : 2010.09.28 Page No. : 1/5 Silicon NPN Epitaxial Planar Transistor BTC2881FP BVCEO IC RCESAT(MAX) 200V 1A 0.86Ω Description • High breakdown voltage, BVCEO≥ 200V • Large continuous collector current capability • Low collector saturation voltage • RoHS compliant package Symbol Outline TO-220FP BTC2881FP B：Base C：Collector E：Emitter B C E Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Power Dissipation @TA=25℃ Power Dissipation @TC=25℃ Operating Junction Temperature and Storage Temperature Range VCBO VCEO VEBO IC IB 300 200 6 1 0.2 2 15 -55~+150 V V V A A W W °C BTC2881FP PD Tj ; Tstg CYStek Product Specification Spec. No. : C316FP Issued Date : 2010.09.23 Revised Date : 2010.09.28 Page No. : 2/5 CYStech Electronics Corp. Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Symbol Rth,j-c Rth,j-a Value 8.33 62.5 Unit °C/W °C/W Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VCE(sat) *VBE(sat) *VBE(on) *hFE 1 *hFE 2 *hFE 3 fT Cob Min. 300 200 6 140 160 30 - Typ. 0.2 120 - Max. 100 100 0.4 0.6 1 1 320 30 Unit V V V nA nA V V V V MHz pF Test Conditions IC=10μA IC=10mA IE=10μA VCB=300V VEB=6V IC=500mA, IB=50mA IC=700mA, IB=35mA IC=500mA, IB=50mA VCE=5V, IC=500mA VCE=5V, IC=50mA VCE=5V, IC=100mA VCE=5V, IC=700mA VCE=5V, IC=100mA VCB=10V, IE=0A, f=1MHz *Pulse Test: Pulse Width ≤300µs, Duty Cycle≤2% Ordering Information Device BTC2881FP BTC2881FP Package TO-220FP (RoHS compliant package) Shipping 50 pcs / tube , 40 tubes/box CYStek Product Specification CYStech Electronics Corp. Spec. No. : C316FP Issued Date : 2010.09.23 Revised Date : 2010.09.28 Page No. : 3/5 Typical Characteristics Current Gain vs Collector Current Saturation Voltage vs Collector Current 10000 100 Saturation Voltage---(V) Current Gain---HFE 1000 VCE=5V VCE=2V VCESAT 1000 IC=20IB 100 IC=10IB 10 10 1 10 100 1000 1 100 1000 Collector Current---IC(mA) Collector Current---IC(mA) On Voltage vs Collector Current Saturation Voltage vs Collector Current 1000 On Voltage---(mV) Saturation Voltage---(mV) 1000 VBESAT@IC=10IB 100 VBEON@VCE=5V 100 1 10 100 Collector Current---IC(mA) 1 1000 Power Derating Curve 10 100 Collector Current---IC(mA) 1000 Power Derating Curve 2.5 16 Power Dissipation---PD(W) Power Dissipation---PD(W) 10 2 1.5 1 0.5 14 12 10 8 6 4 2 0 0 0 BTC2881FP 50 100 150 Ambient Temperature---TA(℃) 200 0 50 100 150 Case Temperature---TC(℃) 200 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C316FP Issued Date : 2010.09.23 Revised Date : 2010.09.28 Page No. : 4/5 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. BTC2881FP CYStek Product Specification CYStech Electronics Corp. Spec. No. : C316FP Issued Date : 2010.09.23 Revised Date : 2010.09.28 Page No. : 5/5 TO-220FP Dimension Marking: C2881 Date Code □□ Style: Pin 1.Base 2.Collector 3.Emitter 4.Collector 3-Lead TO-220FP Plastic Package CYStek Package Code: FP *: Typical Inches Min. Max. 0.169 0.185 0.051 REF 0.110 0.126 0.098 0.114 0.020 0.030 0.043 0.053 0.069 0.059 0.020 0.030 DIM A A1 A2 A3 b b1 b2 c Millimeters Min. Max. 4.300 4.700 1.300 REF 2.800 3.200 2.500 2.900 0.500 0.750 1.100 1.350 1.750 1.500 0.500 0.750 DIM D E e F Φ L L1 L2 Inches Min. Max. 0.408 0.392 0.583 0.598 0.100 TYP 0.106 REF 0.138 REF 1.102 1.118 0.067 0.075 0.075 0.083 Millimeters Min. Max. 10.360 9.960 14.800 15.200 2.540 TYP 2.700 REF 3.500 REF 28.000 28.400 1.700 1.900 1.900 2.100 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTC2881FP CYStek Product Specification