ON MPSW42RLRA One watt high voltage transistor Datasheet

MPSW42
One Watt High Voltage
Transistor
NPN Silicon
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Features
• Pb−Free Packages are Available*
COLLECTOR
3
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector −Emitter Voltage
VCEO
300
Vdc
Collector −Base Voltage
VCBO
300
Vdc
Emitter −Base Voltage
VEBO
6.0
Vdc
Collector Current − Continuous
IC
500
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
1.0
8.0
W
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
2.5
20
W
mW/°C
TJ, Tstg
−55 to +150
°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient
RqJA
125
°C/W
Thermal Resistance, Junction−to−Case
RqJC
50
°C/W
2
BASE
1
EMITTER
1
12
3
STRAIGHT LEAD
BULK PACK
2
3
BENT LEAD
TAPE & REEL
AMMO PACK
TO−92 1 WATT
(TO−226)
CASE 29−10
STYLE 1
MARKING DIAGRAM
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
MPS
W42
AYWW G
G
MPSW42
A
Y
WW
G
= Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
MPSW42
MPSW42G
MPSW42RLRA
MPSW42RLRAG
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2010
August, 2010 − Rev. 7
1
Package
Shipping†
TO−92
5000 Units/Box
TO−92
(Pb−Free)
5000 Units/Box
TO−92
2000/Tape & Reel
TO−92
(Pb−Free)
2000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
MPSW42/D
MPSW42
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
Collector −Emitter Breakdown Voltage (Note 1)
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
300
−
Vdc
Collector−Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
V(BR)CBO
300
−
Vdc
Emitter−Base Breakdown Voltage
(IE = 100 mAdc, IC = 0)
V(BR)EBO
6.0
−
Vdc
Collector Cutoff Current
(VCB = 200 Vdc, IE = 0)
ICBO
−
0.1
mAdc
Emitter Cutoff Current
(VEB = 6.0 Vdc, IC = 0)
IEBO
−
0.1
mAdc
25
40
40
−
−
−
OFF CHARACTERISTICS
ON CHARACTERISTICS
DC Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc)
(IC = 30 mAdc, VCE = 10 Vdc)
hFE
−
Collector−Emitter Saturation Voltage
(IC = 20 mAdc, IB = 2.0 mAdc)
VCE(sat)
−
0.5
Vdc
Base−Emitter Saturation Voltage
(IC = 20 mAdc, IB = 2.0 mAdc)
VBE(sat)
−
0.9
Vdc
fT
50
−
MHz
Ccb
−
3.0
pF
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = 10 mAdc, VCE = 20 Vdc, f = 20 MHz)
Collector Capacitance
(VCB = 20 Vdc, IE = 0, f = 1.0 MHz)
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
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2
MPSW42
120
hFE , DC CURRENT GAIN
VCE = 10 Vdc
TJ = +125°C
100
80
25°C
60
40
-55°C
20
0
0.1
1.0
10
100
IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
100
C, CAPACITANCE (pF)
Ceb @ 1MHz
10
1.0
0.1
0.1
Ccb @ 1MHz
1.0
10
100
VR, REVERSE VOLTAGE (VOLTS)
1000
Figure 2. Capacitance
1.4
V, VOLTAGE (VOLTS)
1.2
VCE(sat) @ 25°C, IC/IB = 10
VCE(sat) @ 125°C, IC/IB = 10
VCE(sat) @ -55°C, IC/IB = 10
VBE(sat) @ 25°C, IC/IB = 10
1.0
0.8
VBE(sat) @ 125°C, IC/IB = 10
0.6
VBE(sat) @ -55°C, IC/IB = 10
VBE(on) @ 25°C, VCE = 10 V
VBE(on) @ 125°C, VCE = 10 V
VBE(on) @ -55°C, VCE = 10 V
0.4
0.2
0.0
0.1
1.0
10
IC, COLLECTOR CURRENT (mA)
100
Figure 3. ”ON” Voltages
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3
MPSW42
PACKAGE DIMENSIONS
TO−92 (TO−226) 1 WATT
CASE 29−10
ISSUE O
A
B
R
STRAIGHT LEAD
BULK PACK
P
L
F
K
D
X X
G
J
H
V
C
SECTION X−X
N
1
N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS
UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN DIMENSIONS P
AND L. DIMENSIONS D AND J APPLY BETWEEN DI­
MENSIONS L AND K MINIMUM. THE LEAD
DIMENSIONS ARE UNCONTROLLED IN DIMENSION
P AND BEYOND DIMENSION K MINIMUM.
DIM
A
B
C
D
F
G
H
J
K
L
N
P
R
V
INCHES
MIN
MAX
0.175
0.205
0.290
0.310
0.125
0.165
0.018
0.021
0.016
0.019
0.045
0.055
0.095
0.105
0.018
0.024
0.500
--0.250
--0.080
0.105
--0.100
0.135
--0.135
---
MILLIMETERS
MIN
MAX
4.44
5.21
7.37
7.87
3.18
4.19
0.46
0.53
0.41
0.48
1.15
1.39
2.42
2.66
0.46
0.61
12.70
--6.35
--2.04
2.66
--2.54
3.43
--3.43
---
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
A
BENT LEAD
TAPE & REEL
AMMO PACK
R
B
P
T
SEATING
PLANE
G
K
D
X X
J
V
1
C
N
SECTION X−X
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS
UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN DIMENSIONS P
AND L. DIMENSIONS D AND J APPLY BETWEEN
DIMENSIONS L AND K MINIMUM. THE LEAD
DIMENSIONS ARE UNCONTROLLED IN DIMENSION
P AND BEYOND DIMENSION K MINIMUM.
DIM
A
B
C
D
G
J
K
N
P
R
V
INCHES
MIN
MAX
0.175
0.205
0.290
0.310
0.125
0.165
0.018
0.021
0.094
0.102
0.018
0.024
0.500
--0.080
0.105
--0.100
0.135
--0.135
---
MILLIMETERS
MIN
MAX
4.44
5.21
7.37
7.87
3.18
4.19
0.46
0.53
2.40
2.80
0.46
0.61
12.70
--2.04
2.66
--2.54
3.43
--3.43
---
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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
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MPSW42/D
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