TIGER ELECTRONIC CO.,LTD TO-92 Plastic-Encapsulate Transistors MCR 100- 6, - 8 TO-92 Silicon Planar PNPN Thyristor 1. KATHODE FEATURES 2. GATE Current-IGT: 200 µA ITRMS: 0.8 A VDRM: 3. ANODE MCR100-6: 400 V MCR100-8: 600 V 1 2 3 Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter unless otherwise specified) Symbol Test conditions On state voltage * VTM Gate trigger voltage VGT Peak Repetitive forward and reverse MAX UNIT ITM=1A 1.7 V VAK=7V 0.8 V VDRM blocking voltage IDRM= 10 µA ,VMAX=1010 V AND MCR100-6 VRRM MCR100-8 IDRM VAK= Rated Current IRRM VDRM or VRRM IH IHL= 20 mA , Av = 7 V Holding current 400 V 600 Peak forward or reverse blocking Gate trigger current MIN 10 µA 5 mA A2 5 15 µA A1 15 30 µA A 30 80 µA B 80 200 µA VAK=7V IGT * Forward current applied for 1 ms maximum duration, duty cycle≤1%. Typical Characteristics MCR100-6,-8