TGS MCR100-6 To-92 plastic-encapsulate transistors (to-92) Datasheet

TIGER ELECTRONIC CO.,LTD
TO-92 Plastic-Encapsulate Transistors
MCR 100- 6, - 8
TO-92
Silicon Planar PNPN Thyristor
1. KATHODE
FEATURES
2. GATE
Current-IGT:
200
µA
ITRMS:
0.8
A
VDRM:
3. ANODE
MCR100-6:
400
V
MCR100-8:
600
V
1 2 3
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
unless otherwise specified)
Symbol
Test conditions
On state voltage *
VTM
Gate trigger voltage
VGT
Peak Repetitive forward and reverse
MAX
UNIT
ITM=1A
1.7
V
VAK=7V
0.8
V
VDRM
blocking voltage
IDRM= 10 µA ,VMAX=1010 V
AND
MCR100-6
VRRM
MCR100-8
IDRM
VAK= Rated
Current
IRRM
VDRM or VRRM
IH
IHL= 20 mA , Av = 7 V
Holding current
400
V
600
Peak forward or reverse blocking
Gate trigger current
MIN
10
µA
5
mA
A2
5
15
µA
A1
15
30
µA
A
30
80
µA
B
80
200
µA
VAK=7V
IGT
* Forward current applied for 1 ms maximum duration, duty cycle≤1%.
Typical Characteristics
MCR100-6,-8
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