BRIGHT LED ELECTRONICS CORP. SINCE 1981 DATA SHEET DEVICE NUMBER：BIR-BM13V4V-2 ● SHEET DATE 1 2 3 4 2002.11.07 1.0 1.0 1.0 1.0 2003.04.10 1.1 1.1 2004.11.13 2.0 2.0 2.0 2.0 - CONTENTS Initial Released Date﹑Tsol﹑ Ee ﹑ Ie﹑FIG.3 Format Of Sheets ﹑Features 1.1 佰鴻工業股份有限公司 BRIGHT LED ELECTRONICS CORP. 台北縣板橋市和平路 19 號 3 樓 3F., No. 19, Ho Ping Road, Pan Chiao City, Taipei, Taiwan, R. O. C. Tel: 886-2-29591090 Fax: 886-2-29547006/29558809 www.brtled.com. APPROVED DRAWER 賈遠慶 肖美艷 BRIGHT LED ELECTRONICS CORP. BIR-BM13V4V-2 SINCE 1981 END-LOOK PACKAGE IGHT EMITTING DIODE z Package Dimensions: z Features: 4.98(.196) 1. High radiant power and high radiant intensity. 2. Standard T-1 1/4(5mm)package. 7.7(.303) 3. Peak wavelength λp=940nm. 5(.197) 4. Good spectral matching to si-photodetector. 1.0(.040) 1.5(.059) MAX. 5. Radiant angle: 60° Flat Denotes Cathode 23.4(.921) MIN. 6. Lens Appearance: Water Clear Cathode 7. This product doesn't contain restriction 5.9(.232) substance, comply ROHS standard 0.5(0.197) SQ TYP. 1.0(.040) MIN. 2.54(.100) NOM z Applications: 1. Remote Control. NOTES: 2. Automatic Control System. 3.Lead spacing is measured where the leads emerge from the package. 4. Specifications are subject to change without notice. 1.All dimensions are in millimeters (inches). 2.Tolerance is ±0.25mm (0.01’) unless otherwise specified. z Absolute Maximum Ratings(Ta=25℃) Parameter Symbol Rating Unit Power Dissipation Pd 100 mW Continuous Forward Current IF 100 mA IFP 1.0 A VR 5 V Operating Temperature Topr -45℃~85℃ - Storage Temperature Tstg -45℃~100℃ - Soldering Temperature Tsol 260℃(for 5 seconds) - Peak Forward Current *1 Reverse Voltage *1 Condition for is IFP pulse of 1/10 duty and 0.1 msec width. Rev:2.0 Page1 of 4 BRIGHT LED ELECTRONICS CORP. BIR-BM13V4V-2 SINCE 1981 z Optical- Electrical Characteristics (@TA=25℃) Parameter Symbol Test Conditions Min TYP Max Unit Radiant Intensity Ie If=50mA 8.41 17.06 - mW/sr Forward Voltage VF IF=50mA - 1.25 1.5 V Reverse Current IR VR=5V - - 100 µA Peak Wavelength λp IF=20mA - 940 - nm Spectral Line Half- Width ∆λ IF=20mA - 50 - nm Viewing Angle 2θ1/2 IF=20mA - 60 - deg z Typical Optical-Electrical Characteristic Curves Fig.2 Forward Current Vs Ambient Temperature Fig.1 Spectral Dlstrbution 120 Forward Current IF (mA) Relative Radiant Intensity 1.0 0.5 840 100 80 60 40 20 0 -40 1040 940 Wavelength Output Power To Value @50mA Forward Current 80 60 40 20 1.0 0 2.0 0 20 40 60 80 100 Fig.4 Relative Radiant Intensity Vs Ambient Tembeb Ature Fig.3 Forward Current Vs (mA) 100 0 -20 Ambient Temperature (nm) 4.0 3.0 3.0 2.5 2.0 1.5 1.0 0.5 0 -40 (V) Forward Voltage -20 0 20 40 60(°C) Ambient Temperature FIG.6 Radiation Diagram Fig.5 Relative Radiant Intensity Vs Forward Current 0 10 20 30 Relative Radiant Intensity Output Power Relative To Value At @ 50mA 4.0 3.0 2.0 1.0 0 1.0 40 0.9 50 0.8 60 70 0.7 80 90 0 20 40 60 Forward Current 80 100 0.5 0.3 0.1 0.2 0.4 0.6 (mA) Rev:2.0 Page2 of 4 BRIGHT LED ELECTRONICS CORP. BIR-BM13V4V-2 SINCE 1981 z Tapping and packaging specifications(Units: mm) z Packaging Bag Dimensions Notes: 1、500pcs per bag, 5Kpcs per box. 2、All dimensions are in millimeters(inches). 3、Specifications are subject to change without notice. Rev:2.0 Page3 of 4 BRIGHT LED ELECTRONICS CORP. BIR-BM13V4V-2 SINCE 1981 Infrared Emitting Diode Specification Commodity: Infrared emitting diode Intensity Bin Limits (At 50mA) BIN CODE Min.(mW/sr) Max.(mW/sr) 10 6.00 11.38 11 8.41 15.95 12 11.78 22.33 13 16.50 31.28 14 23.12 43.79 15 32.36 61.30 Rev:2.0 Page4of 4