Mitsubishi CM200E3U-12H High power switching use insulated type Datasheet

MITSUBISHI IGBT MODULES
CM200E3U-12H
HIGH POWER SWITCHING USE
INSULATED TYPE
TC Measured
Point
A
B
E
F
U
H
G
J
C2E1
E2
C1
G2 G2
CM
D
C
2 - Mounting
Holes
(6.5 Dia.)
L
M
3-M5 Nuts
P
Q
Description:
Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of one
IGBT having a reverse-connected
super-fast recovery free-wheel diode and an anode-collector connected super-fast recovery freewheel diode. All components and
interconnects are isolated from the
heat sinking baseplate, offering
simplified system assembly and
thermal management.
N
O
O
V
TAB#110 t=0.5
P
S
R
T
E2
Features:
u Low Drive Power
u Low VCE(sat)
u Discrete Super-Fast Recovery
Free-Wheel Diode
u High Frequency Operation
u Isolated Baseplate for Easy
Heat Sinking
G2
C2E1
C1
E2
Outline Drawing and Circuit Diagram
Dimensions
A
Inches
3.7
Millimeters
Inches
Millimeters
Application:
u Brake
M
0.47
12.0
N
0.53
13.5
48.0
O
0.1
2.5
24.0
P
0.63
16.0
0.28
7.0
Q
0.98
25.0
0.67
17.0
R
G
0.91
23.0
S
0.3
7.5
H
0.91
23.0
T
0.83
21.2
Type
Current Rating
Amperes
VCES
Volts (x 50)
J
0.43
11.0
U
0.16
4.0
CM
200
12
L
0.16
4.0
V
0.51
13.0
B
3.15±0.01
C
1.89
D
0.94
E
F
94.0
Dimensions
80.0±0.25
1.18 +0.04/-0.02 30.0 +1.0/-0.5
Ordering Information:
Example: Select the complete
module number you desire from the
table - i.e. CM200E3U-12H is a
600V (VCES), 200 Ampere IGBT
Module.
Sep.1998
MITSUBISHI IGBT MODULES
CM200E3U-12H
HIGH POWER SWITCHING USE
INSULATED TYPE
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings
Junction Temperature
Storage Temperature
Symbol
CM200E3U-12H
Units
Tj
-40 to 150
°C
Tstg
-40 to 125
°C
Collector-Emitter Voltage (G-E SHORT)
VCES
600
Volts
Gate-Emitter Voltage (C-E SHORT)
VGES
±20
Volts
IC
200
Amperes
ICM
400*
Amperes
IE
200
Amperes
Peak Emitter Current**
IEM
400*
Amperes
Maximum Collector Dissipation (Tc = 25°C, Tj 150°C)
Pc
650
Watts
Collector Current (Tc = 25°C)
Peak Collector Current
Emitter Current** (Tc = 25°C)
Mounting Torque, M5 Main Terminal
–
2.5~3.5
N·m
Mounting Torque, M6 Mounting
–
3.5~4.5
N·m
–
310
Grams
Viso
2500
Vrms
Weight
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Collector-Cutoff Current
ICES
VCE = VCES, VGE = 0V
–
–
1
mA
Gate Leakage Voltage
IGES
VGE = VGES, VCE = 0V
–
–
0.5
µA
Gate-Emitter Threshold Voltage
VGE(th)
IC = 20mA, VCE = 10V
4.5
6
7.5
Volts
Collector-Emitter Saturation Voltage
VCE(sat)
IC = 200A, VGE = 15V, Tj = 25°C
–
2.4
3.0
Volts
IC = 200A, VGE = 15V, Tj = 125°C
–
2.6
–
Volts
QG
VCC = 300V, IC = 200A, VGE = 15V
–
–
nC
Total Gate Charge
400
Emitter-Collector Voltage**
VEC
IE = 200A, VGE = 0V
–
–
2.6
Volts
Emitter-Collector Voltage
VFM
IF = 200A, Clamp Diode Part
–
–
2.6
Volts
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Input Capacitance
Cies
Output Capacitance
Coes
Reverse Transfer Capacitance
Cres
Resistive
td(on)
Turn-on Delay Time
Load
Rise Time
Switch
Turn-off Delay Time
Times
Fall Time
Test Conditions
VCE = 10V, VGE = 0V
VCC = 300V, IC = 200A,
Min.
Typ.
Max.
Units
–
–
17.6
nF
–
–
9.6
nF
–
–
2.6
nF
–
–
150
ns
tr
VGE1 = VGE2 = 15V,
–
–
400
ns
td(off)
RG = 3.1Ω, Resistive
–
–
300
ns
tf
Load Switching Operation
–
–
300
ns
Diode Reverse Recovery Time**
trr
IE = 200A, diE/dt = -400A/µs
–
–
160
ns
Diode Reverse Recovery Charge**
Qrr
IE = 200A, diE/dt = -400A/µs
–
0.48
Diode Reverse Recovery Time
trr
IF = 200A, Clamp Diode Part
–
–
Diode Reverse Recovery Charge
Qrr
diF/dt = -400A/µs
–
0.48
–
µC
160
ns
–
µC
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Sep.1998
MITSUBISHI IGBT MODULES
CM200E3U-12H
HIGH POWER SWITCHING USE
INSULATED TYPE
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Thermal Resistance, Junction to Case
Rth(j-c)Q
Per IGBT
–
–
0.19
°C/W
Thermal Resistance, Junction to Case
Rth(j-c)D
Per FWDi
–
–
0.35
°C/W
Thermal Resistance, Junction to Case
Rth(j-c)
Clamp Diode Part
–
–
0.35
°C/W
Contact Thermal Resistance
Rth(c-f)
–
0.035
–
°C/W
Per Module, Thermal Grease Applied
OUTPUT CHARACTERISTICS
(TYPICAL)
400
5
15
400
VGE = 20V
COLLECTOR CURRENT, IC, (AMPERES)
Tj = 25oC
14
13
300
12
11
200
10
100
9
VCE = 10V
Tj = 25°C
Tj = 125°C
300
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
500
COLLECTOR CURRENT, IC, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
TRANSFER CHARACTERISTICS
(TYPICAL)
200
100
VGE = 15V
Tj = 25°C
Tj = 125°C
4
3
2
1
8
0
2
4
6
8
0
10
4
8
12
16
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
0
20
Tj = 25°C
IC = 400A
6
IC = 200A
4
2
CAPACITANCE, Cies, Coes, Cres, (nF)
EMITTER CURRENT, IE, (AMPERES)
8
200
300
400
500
CAPACITANCE VS. VCE
(TYPICAL)
102
Tj = 25°C
100
COLLECTOR-CURRENT, IC, (AMPERES)
103
10
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
0
0
0
102
VGE = 0V
Cies
101
Coes
100
Cres
IC = 80A
0
0
4
8
12
16
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
20
101
0.6
1.0
1.4
1.8
2.2
2.6
3.0
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
10-1
10-1
100
101
102
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
Sep.1998
MITSUBISHI IGBT MODULES
CM200E3U-12H
HIGH POWER SWITCHING USE
INSULATED TYPE
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
td(on)
tr
VCC = 300V
VGE = ±15V
RG = 3.1Ω
Tj = 125°C
101
101
102
103
102
100
101
Single Pulse
TC = 25°C
Per Unit Base = Rth(j-c) = 0.19°C/W
10-1
10-1
10-2
10-2
10-3
10-5
TIME, (s)
10-4
10-3
10-3
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c)
Zth = Rth • (NORMALIZED VALUE)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c)
Zth = Rth • (NORMALIZED VALUE)
100
10-1
101
100
10-1
103
102
EMITTER CURRENT, IE, (AMPERES)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT)
10-2
trr
101
101
103
COLLECTOR CURRENT, IC, (AMPERES)
10-3
101
Irr
20
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
td(off)
102
di/dt = -400A/µsec
Tj = 25°C
REVERSE RECOVERY TIME, trr, (ns)
SWITCHING TIME, (ns)
tf
GATE CHARGE, VGE
102
REVERSE RECOVERY CURRENT, Irr, (AMPERES)
104
103
IC = 200A
15
VCC = 200V
VCC = 300V
10
5
0
0
100
200
300
400
500
600
GATE CHARGE, QG, (nC)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi)
10-3
101
100
10-2
10-1
100
101
Single Pulse
TC = 25°C
Per Unit Base = Rth(j-c) = 0.35°C/W
10-1
10-1
10-2
10-2
10-3
10-5
10-4
10-3
10-3
TIME, (s)
Sep.1998
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