MITSUBISHI IGBT MODULES CM200E3U-12H HIGH POWER SWITCHING USE INSULATED TYPE TC Measured Point A B E F U H G J C2E1 E2 C1 G2 G2 CM D C 2 - Mounting Holes (6.5 Dia.) L M 3-M5 Nuts P Q Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of one IGBT having a reverse-connected super-fast recovery free-wheel diode and an anode-collector connected super-fast recovery freewheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. N O O V TAB#110 t=0.5 P S R T E2 Features: u Low Drive Power u Low VCE(sat) u Discrete Super-Fast Recovery Free-Wheel Diode u High Frequency Operation u Isolated Baseplate for Easy Heat Sinking G2 C2E1 C1 E2 Outline Drawing and Circuit Diagram Dimensions A Inches 3.7 Millimeters Inches Millimeters Application: u Brake M 0.47 12.0 N 0.53 13.5 48.0 O 0.1 2.5 24.0 P 0.63 16.0 0.28 7.0 Q 0.98 25.0 0.67 17.0 R G 0.91 23.0 S 0.3 7.5 H 0.91 23.0 T 0.83 21.2 Type Current Rating Amperes VCES Volts (x 50) J 0.43 11.0 U 0.16 4.0 CM 200 12 L 0.16 4.0 V 0.51 13.0 B 3.15±0.01 C 1.89 D 0.94 E F 94.0 Dimensions 80.0±0.25 1.18 +0.04/-0.02 30.0 +1.0/-0.5 Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM200E3U-12H is a 600V (VCES), 200 Ampere IGBT Module. Sep.1998 MITSUBISHI IGBT MODULES CM200E3U-12H HIGH POWER SWITCHING USE INSULATED TYPE Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Junction Temperature Storage Temperature Symbol CM200E3U-12H Units Tj -40 to 150 °C Tstg -40 to 125 °C Collector-Emitter Voltage (G-E SHORT) VCES 600 Volts Gate-Emitter Voltage (C-E SHORT) VGES ±20 Volts IC 200 Amperes ICM 400* Amperes IE 200 Amperes Peak Emitter Current** IEM 400* Amperes Maximum Collector Dissipation (Tc = 25°C, Tj 150°C) Pc 650 Watts Collector Current (Tc = 25°C) Peak Collector Current Emitter Current** (Tc = 25°C) Mounting Torque, M5 Main Terminal – 2.5~3.5 N·m Mounting Torque, M6 Mounting – 3.5~4.5 N·m – 310 Grams Viso 2500 Vrms Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current ICES VCE = VCES, VGE = 0V – – 1 mA Gate Leakage Voltage IGES VGE = VGES, VCE = 0V – – 0.5 µA Gate-Emitter Threshold Voltage VGE(th) IC = 20mA, VCE = 10V 4.5 6 7.5 Volts Collector-Emitter Saturation Voltage VCE(sat) IC = 200A, VGE = 15V, Tj = 25°C – 2.4 3.0 Volts IC = 200A, VGE = 15V, Tj = 125°C – 2.6 – Volts QG VCC = 300V, IC = 200A, VGE = 15V – – nC Total Gate Charge 400 Emitter-Collector Voltage** VEC IE = 200A, VGE = 0V – – 2.6 Volts Emitter-Collector Voltage VFM IF = 200A, Clamp Diode Part – – 2.6 Volts **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Resistive td(on) Turn-on Delay Time Load Rise Time Switch Turn-off Delay Time Times Fall Time Test Conditions VCE = 10V, VGE = 0V VCC = 300V, IC = 200A, Min. Typ. Max. Units – – 17.6 nF – – 9.6 nF – – 2.6 nF – – 150 ns tr VGE1 = VGE2 = 15V, – – 400 ns td(off) RG = 3.1Ω, Resistive – – 300 ns tf Load Switching Operation – – 300 ns Diode Reverse Recovery Time** trr IE = 200A, diE/dt = -400A/µs – – 160 ns Diode Reverse Recovery Charge** Qrr IE = 200A, diE/dt = -400A/µs – 0.48 Diode Reverse Recovery Time trr IF = 200A, Clamp Diode Part – – Diode Reverse Recovery Charge Qrr diF/dt = -400A/µs – 0.48 – µC 160 ns – µC **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Sep.1998 MITSUBISHI IGBT MODULES CM200E3U-12H HIGH POWER SWITCHING USE INSULATED TYPE Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case Rth(j-c)Q Per IGBT – – 0.19 °C/W Thermal Resistance, Junction to Case Rth(j-c)D Per FWDi – – 0.35 °C/W Thermal Resistance, Junction to Case Rth(j-c) Clamp Diode Part – – 0.35 °C/W Contact Thermal Resistance Rth(c-f) – 0.035 – °C/W Per Module, Thermal Grease Applied OUTPUT CHARACTERISTICS (TYPICAL) 400 5 15 400 VGE = 20V COLLECTOR CURRENT, IC, (AMPERES) Tj = 25oC 14 13 300 12 11 200 10 100 9 VCE = 10V Tj = 25°C Tj = 125°C 300 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 500 COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) 200 100 VGE = 15V Tj = 25°C Tj = 125°C 4 3 2 1 8 0 2 4 6 8 0 10 4 8 12 16 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 0 20 Tj = 25°C IC = 400A 6 IC = 200A 4 2 CAPACITANCE, Cies, Coes, Cres, (nF) EMITTER CURRENT, IE, (AMPERES) 8 200 300 400 500 CAPACITANCE VS. VCE (TYPICAL) 102 Tj = 25°C 100 COLLECTOR-CURRENT, IC, (AMPERES) 103 10 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 0 0 0 102 VGE = 0V Cies 101 Coes 100 Cres IC = 80A 0 0 4 8 12 16 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 20 101 0.6 1.0 1.4 1.8 2.2 2.6 3.0 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) 10-1 10-1 100 101 102 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) Sep.1998 MITSUBISHI IGBT MODULES CM200E3U-12H HIGH POWER SWITCHING USE INSULATED TYPE HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) td(on) tr VCC = 300V VGE = ±15V RG = 3.1Ω Tj = 125°C 101 101 102 103 102 100 101 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.19°C/W 10-1 10-1 10-2 10-2 10-3 10-5 TIME, (s) 10-4 10-3 10-3 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth • (NORMALIZED VALUE) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth • (NORMALIZED VALUE) 100 10-1 101 100 10-1 103 102 EMITTER CURRENT, IE, (AMPERES) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 10-2 trr 101 101 103 COLLECTOR CURRENT, IC, (AMPERES) 10-3 101 Irr 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) td(off) 102 di/dt = -400A/µsec Tj = 25°C REVERSE RECOVERY TIME, trr, (ns) SWITCHING TIME, (ns) tf GATE CHARGE, VGE 102 REVERSE RECOVERY CURRENT, Irr, (AMPERES) 104 103 IC = 200A 15 VCC = 200V VCC = 300V 10 5 0 0 100 200 300 400 500 600 GATE CHARGE, QG, (nC) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-3 101 100 10-2 10-1 100 101 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.35°C/W 10-1 10-1 10-2 10-2 10-3 10-5 10-4 10-3 10-3 TIME, (s) Sep.1998