BC490 High Current Transistors PNP Silicon Features • This is a Pb−Free Device* http://onsemi.com COLLECTOR 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage VCEO −80 Vdc Collector − Base Voltage VCBO −80 Vdc Emitter − Base Voltage VEBO −4.0 Vdc Collector Current − Continuous IC −1.0 Adc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5.0 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 12 W mW/°C TJ, Tstg −55 to +150 °C Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W Thermal Resistance, Junction−to−Case RqJC 83.3 °C/W Operating and Storage Junction Temperature Range 2 BASE 3 EMITTER TO−92 CASE 29 STYLE 17 THERMAL CHARACTERISTICS 12 3 STRAIGHT LEAD BULK PACK Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. MARKING DIAGRAM BC 490 AYWW G G A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2007 March, 2007 − Rev. 3 1 Device Package Shipping BC490G TO−92 (Pb−Free) 5000 Units / Bulk Publication Order Number: BC490/D BC490 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector −Emitter Breakdown Voltage (Note 1) (IC = −10 mAdc, IB = 0) V(BR)CEO −80 − − Vdc Collector −Base Breakdown Voltage (IC = −100 mAdc, IE = 0) V(BR)CBO −80 − − Vdc Emitter −Base Breakdown Voltage (IE = −10 mAdc, IC = 0) V(BR)EBO −4.0 − − Vdc ICBO − − −100 nAdc 40 60 15 − − − − 400 − − − −0.25 −0.5 −0.5 − − − −0.9 −1.0 −1.2 − fT − 150 − MHz Output Capacitance (VCB = −10 Vdc, IE = 0, f = 1.0 MHz) Cob − 9.0 − pF Input Capacitance (VEB = −0.5 Vdc, IC = 0, f = 1.0 MHz) Cib − 110 − pF OFF CHARACTERISTICS Collector Cutoff Current (VCB = −60 Vdc, IE = 0) ON CHARACTERISTICS DC Current Gain (IC = −10 mAdc, VCE = −2.0 Vdc) (IC = −100 mAdc, VCE = −2.0 Vdc) (IC = −1.0 Adc, VCE = −5.0 Vdc) hFE Collector −Emitter Saturation Voltage (IC = −500 mAdc, IB = −50 mAdc) (IC = −1.0 Adc, IB = −100 mAdc) VCE(sat) Base −Emitter Saturation Voltage (IC = −500 mAdc, IB = −50 mAdc) (IC = −1.0 Adc, IB = −100 mAdc) VBE(sat) − Vdc Vdc DYNAMIC CHARACTERISTICS Current−Gain − Bandwidth Product (IC = −50 mAdc, VCE = −2.0 Vdc, f = 100 MHz) 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2%. TURN−ON TIME 100 +10 V 0 tr = 3.0 ns RB Vin 5.0 mF +VBB VCC +40 V −1.0 V 5.0 ms TURN−OFF TIME 100 VCC +40 V 100 RL OUTPUT RB Vin 5.0 mF *CS < 6.0 pF 5.0 ms tr = 3.0 ns *Total Shunt Capacitance of Test Jig and Connectors For PNP Test Circuits, Reverse All Voltage Polarities Figure 1. Switching Time Test Circuits http://onsemi.com 2 100 RL OUTPUT *CS < 6.0 pF 200 100 VCE = −2.0 V TJ = 25°C 70 TJ = 25°C Cibo 50 C, CAPACITANCE (pF) f, T CURRENT−GAIN BANDWIDTH PRODUCT (MHz) BC490 100 70 50 30 20 10 Cobo 30 7.0 20 −2.0 −3.0 −5.0 −7.0 −10 −20 −30 −50 −70 −100 IC, COLLECTOR CURRENT (mA) 5.0 −0.1 −200 −0.2 −0.5 −1.0 −2.0 −5.0 −10 −20 VR, REVERSE VOLTAGE (VOLTS) Figure 2. Current−Gain — Bandwidth Product −50 −100 Figure 3. Capacitance 1.0 k 700 500 ts 300 t, TIME (ns) 200 100 70 50 td @ VBE(off) = −0.5 V tf VCC = −40 V IC/IB = 10 IB1 = IB2 TJ = 25°C 30 20 tr 10 −5.0 −7.0 −10 −20 −30 −50 −70 −100 −200 −300 IC, COLLECTOR CURRENT (mA) −500 r(t) TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 4. Switching Time 1.0 0.7 0.5 D = 0.5 0.2 0.1 0.3 0.2 P(pk) t1 0.02 0.1 0.07 0.05 SINGLE PULSE 0.03 SINGLE PULSE ZqJC(t) = r(t) • RqJC ZqJA(t) = r(t) • RqJA 0.02 0.01 t2 DUTY CYCLE, D = t1/t2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN−469) TJ(pk) − TC = P(pk) ZqJC(t) TJ(pk) − TA = P(pk) ZqJA(t) 0.01 1.0 2.0 5.0 10 20 50 100 200 t, TIME (ms) 500 1.0k Figure 5. Thermal Response http://onsemi.com 3 2.0k 5.0k 10k 20k 50k 100 BC490 −1.0 k −700 1.0 100 ms TJ = 25°C 0.8 −300 1.0 s −200 1.0 ms TC = 25°C TA = 25°C −100 −70 −50 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT −30 −20 VBE(sat) @ IC/IB = 10 V, VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA) −500 0.6 0.4 0.2 VCE(sat) @ IC/IB = 10 BC490 −2.0 −3.0 −5.0 −7.0 −10 −20 −30 −50 −70 −100 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) −10 −1.0 VBE(on) @ VCE = 1.0 V 0 0.5 1.0 2.0 1.0 500 200 500 −0.8 RθVB, TEMPERATURE COEFFICIENT (mV/°C) VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) 200 Figure 7. “On” Voltages Figure 6. Active Region, Safe Operating Area TJ = 25°C 0.8 0.6 5.0 10 50 100 20 IC, COLLECTOR CURRENT (mA) −1.2 50 mA IC = 10 mA 100 mA 250 mA 500 mA −1.6 0.4 −2.0 −2.4 0.2 0 0.05 RqVB for VBE 0.1 0.2 1.0 2.0 10 0.5 5.0 IC, COLLECTOR CURRENT (mA) 20 −2.8 0.5 50 1.0 2.0 10 100 5.0 20 50 IC, COLLECTOR CURRENT (mA) Figure 9. Base−Emitter Temperature Coefficient Figure 8. Collector Saturation Region 400 hFE , DC CURRENT GAIN TJ = 125°C VCE = −1.0 V 200 25°C −55°C 100 80 60 40 −0.5 −0.7 −1.0 −2.0 −3.0 −5.0 −7.0 −10 −20 −30 IC, COLLECTOR CURRENT (mA) Figure 10. DC Current Gain http://onsemi.com 4 −50 −70 −100 −200 −300 −500 VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) BC490 −1.0 TJ = 25°C VBE(sat) @ IC/IB = 10 −0.6 VBE(on) @ VCE = −1.0 V −0.4 −0.2 VCE(sat) @ IC/IB = 10 0 −0.5 −1.0 −2.0 −5.0 −10 −20 −50 −100 −200 IC, COLLECTOR CURRENT (mA) −500 TJ = 25°C −0.8 −0.6 IC = −10 mA −50 mA 0 −0.05 −0.1 −0.2 −0.5 −1.0 −2.0 −5.0 IB, BASE CURRENT (mA) −1.6 RqVB for VBE −2.4 −1.0 −2.0 −500 mA −10 −20 Figure 12. Collector Saturation Region −1.2 −2.8 −0.5 −250 mA −0.2 −0.8 −2.0 −100 mA −0.4 Figure 11. “On” Voltages RθVB, TEMPERATURE COEFFICIENT (mV/°C) V, VOLTAGE (VOLTS) −0.8 −1.0 −5.0 −10 −20 −50 −100 −200 IC, COLLECTOR CURRENT (mA) −500 Figure 13. Base−Emitter Temperature Coefficient http://onsemi.com 5 −50 BC490 PACKAGE DIMENSIONS TO−92 (TO−226) CASE 29−11 ISSUE AM A B STRAIGHT LEAD BULK PACK R P L SEATING PLANE K D X X G J H V C SECTION X−X 1 N NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. DIM A B C D G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 −−− 0.250 −−− 0.080 0.105 −−− 0.100 0.115 −−− 0.135 −−− MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 −−− 6.35 −−− 2.04 2.66 −−− 2.54 2.93 −−− 3.43 −−− N A R BENT LEAD TAPE & REEL AMMO PACK B P NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. T SEATING PLANE K D X X G J V 1 C SECTION X−X DIM A B C D G J K N P R V MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.40 0.54 2.40 2.80 0.39 0.50 12.70 −−− 2.04 2.66 1.50 4.00 2.93 −−− 3.43 −−− N STYLE 17: PIN 1. COLLECTOR 2. BASE 3. EMITTER ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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