CYStech Electronics Corp. Spec. No. : C107N8J Issued Date : 2017.04.10 Revised Date : age No. : 1/10 P-Channel Enhancement Mode MOSFET MTP4435N8J BVDSS ID@VGS=-10V, TC=25°C ID@VGS=-10V, TA=25°C RDSON@VGS=-10V, ID=-10A RDSON@VGS=-4.5V, ID=-7A -30V -10A -6.8A 15.4mΩ (typ.) 23.7mΩ (typ.) Features • Simple drive requirement • Low on-resistance • Fast switching speed • Pb-free lead plating and halogen-free package Equivalent Circuit Outline 2928-8J MTP4435N8J Pin 1 G：Gate S：Source D：Drain Ordering Information Device MTP4435N8J-0-T1-G Package Shipping 2928-8J 3000 pcs / Tape & Reel (Pb-free lead plating and halogen-free package) Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel,7” reel Product rank, zero for no rank products Product name MTP4435N8J CYStek Product Specification CYStech Electronics Corp. Spec. No. : C107N8J Issued Date : 2017.04.10 Revised Date : age No. : 2/10 Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Drain-Source Breakdown Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current Limits BVDSS -30 VGS ±20 TC=25 °C, VGS=-10V TC=70 °C, VGS=-10V TA=25 °C, VGS=-10V TA=70°C TC=25°C TC=70°C Operating Junction and Storage Temperature Range V -8 ID -6.8 A -5.4 IDM *3 Unit -10 TA=70 °C, VGS=-10V TA=25°C Total Power Dissipation Symbol -45 PDSM PD * 1 Tj ; Tstg 1.6 *2 1.0 *2 3.1 W 2.0 -55~+150 °C Thermal Data Parameter Max. Thermal Resistance, Junction-to-ambient, steady state Max. Thermal Resistance, Junction-to-case Symbol RθJA RθJC Value 80 *2 40 Unit °C/W Note : 1.The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. 2. The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment with TA=25°C. 216°C/W when mounted on a minimum pad of 2 oz. copper. The power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user’s specific board design. 3. Pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low duty cycles to keep initial TJ=25°C. MTP4435N8J CYStek Product Specification CYStech Electronics Corp. Spec. No. : C107N8J Issued Date : 2017.04.10 Revised Date : age No. : 3/10 Electrical Characteristics (Tc=25°C, unless otherwise specified) Symbol Min. Typ. Max. -30 -1 - 15.4 23.7 11 -2.5 ±100 -1 -10 19 32 - - 1478 176 152 10 17.2 61 13 33.3 4.7 6.9 6.6 50 - - -0.75 12 7 -4 -16 -1 - Unit Test Conditions Static BVDSS VGS(th) IGSS IDSS *RDS(ON) *GFS S VGS=0V, ID=-250μA VDS=VGS, ID=-250μA VGS=±20V, VDS=0V VDS=-30V, VGS=0V VDS=-24V, VGS=0V, Tj=70°C VGS=-10V, ID=-10A VGS=-4.5V, ID=-7A VDS=-10V, ID=-5A pF VDS=-15V, VGS=0V, f=1MHz ns VDS=-15V, ID=-10A, VGS=-10V, RG=3Ω nC VDS=-15V, ID=-10A, VGS=-10V Ω f=1MHz V nA μA mΩ Dynamic Ciss Coss Crss *td(ON) *tr *td(OFF) *tf *Qg *Qgs *Qgd Rg Body Diode *IS *ISM *VSD *trr *Qrr A V VGS=0V, IS=-1A ns nC IF=-10A, VGS=0V, dIF/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% MTP4435N8J CYStek Product Specification CYStech Electronics Corp. Spec. No. : C107N8J Issued Date : 2017.04.10 Revised Date : age No. : 4/10 Recommended Soldering Footprint unit : mm MTP4435N8J CYStek Product Specification CYStech Electronics Corp. Spec. No. : C107N8J Issued Date : 2017.04.10 Revised Date : age No. : 5/10 Typical Characteristics : Brekdown Voltage vs Ambient Temperature Typical Output Characteristics 50 1.4 45 -4V 40 -I D, Drain Current (A) -BVDSS, Normalized Drain-Source Breakdown Voltage -10V, -9V, -8V, -7V,-6V,-5V 35 -3.5V 30 25 -3V 20 15 10 VGS=-2.5V 1.2 1 0.8 ID=-250μA, VGS=0V 0.6 5 0.4 0 0 1 2 3 4 -VDS, Drain-Source Voltage(V) -75 -50 -25 5 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) Source Drain Current vs Source-Drain Voltage Static Drain-Source On-State resistance vs Drain Current 100 1.2 -VSD , Source-Drain Voltage(V) RDS(on), Static Drain-Source On-State Resistance(mΩ) VGS=0V VGS=-4.5V 1 Tj=25°C 0.8 Tj=150°C 0.6 0.4 VGS=-10V 0.2 10 0.01 0.1 1 -ID, Drain Current(A) 10 0 100 R DS(on) , Normalized Static Drain-Source On-State Resistance R DS(on) , Static Drain-Source On-State Resistance(mΩ) 100 80 ID=-10A 40 ID=-7A 20 4 6 8 10 12 14 -IS , Source Drain Current(A) 16 18 20 Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage 60 2 2 1.8 VGS=-10V, ID=-10A RDS(ON) @Tj=25°C : 15.4mΩ typ. 1.6 1.4 1.2 1 0.8 VGS=-4.5V, ID=-7A RDS(ON) @Tj=25°C : 23.7mΩ typ. 0.6 0.4 0 0 MTP4435N8J 2 4 6 8 -VGS, Gate-Source Voltage(V) 10 -75 -50 -25 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) CYStek Product Specification Spec. No. : C107N8J Issued Date : 2017.04.10 Revised Date : age No. : 6/10 CYStech Electronics Corp. Typical Characteristics(Cont.) : Threshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage -VGS(th) , Normalized Threshold Voltage Capacitance---(pF) 10000 Ciss 1000 C oss Crss 1.4 1.2 ID=-1mA 1 0.8 ID=-250μA 0.6 0.4 100 0 5 10 15 20 25 -VDS, Drain-Source Voltage(V) -75 -50 -25 30 Forward Transfer Admittance vs Drain Current 50 75 100 125 150 175 10 10 1 VDS=-10V Pulsed TA=25°C 0.1 8 -VGS, Gate-Source Voltage(V) GFS, Forward Transfer Admittance(S) 25 Gate Charge Characteristics 100 6 4 VDS=-15V ID=-10A 2 0 0.01 0.001 0.01 0.1 1 -ID, Drain Current(A) 0 10 4 8 12 16 20 24 28 Qg, Total Gate Charge(nC) 32 36 Maximum Drain Current vs Junction Temperature Maximum Safe Operating Area 8 RDS(ON) Limited 10 -I D, Maximum Drain Current(A) 100 -I D, Drain Current(A) 0 Tj, Junction Temperature(°C) 100μs 1ms 10ms 1 100ms 1s 0.1 TA=25°C, Tj=150°C, VGS=-10V RθJA=80°C/W, Single Pulse DC 7 6 5 4 3 2 TA=25°C, VGS=-10V RθJA=80°C/W 1 0 0.01 0.01 MTP4435N8J 0.1 1 10 100 -ID, Drain-Source Voltage(V) 1000 25 50 75 100 125 Tj, Junction Temperature(°C) 150 175 CYStek Product Specification Spec. No. : C107N8J Issued Date : 2017.04.10 Revised Date : age No. : 7/10 CYStech Electronics Corp. Typical Characteristics(Cont.) : Q1( N-channel) Typical Transfer Characteristics 50 50 VDS=-10V 45 TJ(MAX) =150°C TA=25°C RθJA=80°C/W 40 40 35 Power (W) -I D, Drain Current (A) Single Pulse Power Rating, Junction to Ambient (Note on page 2) 30 25 20 30 20 15 10 10 5 0 0.001 0 0 1 2 3 4 -VGS, Gate-Source Voltage(V) 5 0.01 0.1 1 Pulse Width(s) 10 100 Transient Thermal Response Curves 1 r(t), Normalized Effective Transient Thermal Resistance D=0.5 0.2 0.1 0.1 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM-TA=PDM*RθJA(t) 4.RθJA=80°C/W 0.05 0.02 0.01 0.01 Single Pulse 0.001 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 t1, Square Wave Pulse Duration(s) MTP4435N8J CYStek Product Specification CYStech Electronics Corp. Spec. No. : C107N8J Issued Date : 2017.04.10 Revised Date : age No. : 8/10 Reel Dimension Carrier Tape Dimension MTP4435N8J CYStek Product Specification CYStech Electronics Corp. Spec. No. : C107N8J Issued Date : 2017.04.10 Revised Date : age No. : 9/10 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note :1. All temperatures refer to topside of the package, measured on the package body surface. 2.For devices mounted on FR-4 PCB of 1.6mm or equivalent grade PCB. If other grade PCB is used, care should be taken to match the coefficients of thermal expansion between components and PCB. If they are not matched well, the solder joints may crack or the bodies of the parts may crack or shatter as the assembly cools. MTP4435N8J CYStek Product Specification CYStech Electronics Corp. Spec. No. : C107N8J Issued Date : 2017.04.10 Revised Date : age No. : 10/10 2928-8J Dimension Marking: D D D D 4435 Date Code S S S G 8-Lead 2928-8J Plastic Package CYStek Package Code: N8J Millimeters Min. Max. 0.935 1.100 0.010 0.100 0.925 1.000 0.250 0.400 0.100 0.200 2.950 3.100 2.500 3.000 DIM A A1 A2 b c D E Inches Min. Max. 0.0368 0.0433 0.0004 0.0039 0.0364 0.0394 0.0098 0.0157 0.0039 0.0079 0.1161 0.1220 0.0984 0.1181 DIM E1 E2 e L θ θ1 Millimeters Min. Max. 2.300 2.500 2.650 3.050 0.65 BSC 0.300 0.600 0° 8° 7° TYP Inches Min. Max. 0.0906 0.0984 0.1043 0.1201 0.0256 BSC 0.0118 0.0236 0° 8° 7° TYP Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTP4435N8J CYStek Product Specification