Rev. 2.0 BSS87 SIPMOS Ò Small-Signal-Transistor Product Summary Feature VDS · N-Channel 240 V 6 W 0.26 A RDS(on) · Enhancement mode, Logic Level ID · dv/dt rated · Pb-free lead plating; RoHS compliant • Qualified according to AEC Q101 1 2 • Halogenfree according to IE C 61249221 3 2 VPS05558 Type Package Pb-free Tape and Reel Information Marking BSS87 P-SOT89-4-2 Yes H6327: 1000 pcs/reel KA Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current Value Unit A ID TA=25°C 0.26 TA=70°C 0.21 Pulsed drain current ID puls 1.04 dv/dt 6 VGS ±20 TA=25°C Reverse diode dv/dt kV/µs IS=0.26A, V DS=192V, di/dt=200A/µs, Tjmax=150°C Gate source voltage ESD class (JESD22-A114-HBM) V 1A (>250V, <500V) Power dissipation, related to min. footprint Ptot 1 W -55... +150 °C TA=25°C Operating and storage temperature Tj , Tstg IEC climatic category; DIN IEC 68-1 55/150/56 Page 1 2016-05-30 Rev. 2.0 BSS87 Thermal Characteristics Parameter Symbol Values Unit min. typ. max. - - 10 @ min. footprint - - 125 @ 6 cm2 cooling area 1) - - 70 Characteristics Thermal resistance, junction - case RthJC K/W (Pin 2) SMD version, device on PCB: RthJA Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)DSS 240 - - VGS(th) 0.8 1.2 1.8 Static Characteristics Drain-source breakdown voltage V V GS=0, ID=250µA Gate threshold voltage, VGS = VDS ID=108µA Zero gate voltage drain current µA IDSS V DS=240V, VGS=0, Tj=25°C - - 0.1 V DS=240V, VGS=0, Tj=150°C - - 100 IGSS - - 10 nA RDS(on) - 4.6 7.5 W RDS(on) - 3.9 6 Gate-source leakage current V GS=20V, VDS=0 Drain-source on-state resistance V GS=4.5V, ID=0.24A Drain-source on-state resistance V GS=10V, ID=0.26A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2016-05-30 Rev. 2.0 BSS87 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. 0.16 0.33 - S pF Dynamic Characteristics Transconductance g fs V DS³2*I D*RDS(on)max, ID=0.21A Input capacitance Ciss V GS=0, VDS=25V, - 77.5 97 Output capacitance Coss f=1MHz - 11.2 14 Reverse transfer capacitance Crss - 5.8 7.3 Turn-on delay time td(on) V DD=120V, V GS=10V, - 3.7 5.5 Rise time tr ID=0.28A, R G=6W - 3.5 5.2 Turn-off delay time td(off) - 17.6 26.4 Fall time tf - 27.3 41 - 0.14 0.21 - 1.7 2.5 - 3.7 5.5 V(plateau) V DD=192V, ID = 0.26 A - 2.7 - V IS - - 0.26 A - - 1.04 ns Gate Charge Characteristics Gate to source charge Q gs Gate to drain charge Q gd Gate charge total Qg V DD=192V, ID=0.26A V DD=192V, ID=0.26A, nC V GS=0 to 10V Gate plateau voltage Reverse Diode Inverse diode continuous TA=25°C forward current Inv. diode direct current, pulsed ISM Inverse diode forward voltage VSD V GS=0, IF = I S - 0.82 1.2 V Reverse recovery time trr V R=120V, IF=lS, - 53.6 80.4 ns Reverse recovery charge Qrr diF/dt=100A/µs - 101 152 nC Page 3 2016-05-30 Rev. 2.0 BSS87 1 Power dissipation 2 Drain current Ptot = f (TA) ID = f (TA) parameter: V GS³ 10 V 1.1 0.28 A W 0.24 0.9 0.8 0.2 0.7 0.18 ID Ptot 0.22 0.16 0.6 0.14 0.5 0.12 0.4 0.1 0.3 0.08 0.06 0.2 0.04 0.1 0 0 0.02 20 40 60 80 100 120 °C 0 0 160 20 40 60 80 100 120 TA TA 3 Safe operating area 4 Transient thermal impedance ID = f ( V DS ) ZthJA = f (tp) parameter : D = 0 , TA = 25 °C parameter : D = t p/T 10 1 10 3 K/W A = VD 10 2 tp = 65.0µs /ID 0 S 100 µs ZthJA 10 160 °C ID ) RD S( on 10 1 1 ms 10 -1 10 ms D = 0.50 10 0 0.20 0.10 single pulse 0.05 10 -2 0.02 10 -1 0.01 DC 10 -3 0 10 10 1 10 2 V 10 3 VDS 10 -2 -5 -4 -3 -2 -1 0 1 2 10 10 10 10 10 10 10 10 s 10 tp Page 4 2016-05-30 4 Rev. 2.0 BSS87 5 Typ. output characteristic 6 Typ. drain-source on resistance ID = f (VDS) RDS(on) = f (ID) parameter: Tj = 25 °C, VGS parameter: Tj = 25 °C, VGS 10 0.52 A 10V 2.3V W 7V 2.9V 0.44 6V 8 5V RDS(on) 0.4 4.5V ID 0.36 4.1V 3.5V 0.32 2.9V 2.3V 7 3.5V 4.1V 4.5V 5V 6V 7V 10V 6 0.28 5 0.24 0.2 4 0.16 3 0.12 2 0.08 1 0.04 0 0 0.5 1 1.5 2 2.5 3 0 0 4 V VDS 0.08 0.16 0.24 0.32 0.4 7 Typ. transfer characteristics 8 Typ. forward transconductance ID= f ( VGS ); VDS³ 2 x ID x RDS(on)max g fs = f(ID) parameter: Tj = 25 °C parameter: Tj = 25 °C 1 A ID 0.52 A 1 0.6 A S 0.8 g fs ID 0.7 0.6 0.5 0.4 0.3 0.4 0.2 0.3 0.2 0.1 0.1 0 0 0.8 1.6 2.4 3.2 V 4.4 VGS 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 ID Page 5 2016-05-30 Rev. 2.0 BSS87 9 Drain-source on-state resistance 10 Typ. gate threshold voltage RDS(on) = f (Tj) VGS(th) = f (Tj) parameter : ID = 0.26 A, VGS = 10 V parameter: V GS = VDS; ID =108µA 2 30 W V 98% VGS(th) RDS(on) 24 22 20 18 16 1.6 1.4 typ. 1.2 14 12 1 10 8 98% 2% 0.8 6 typ 4 0.6 2 0 -60 -20 20 60 100 °C 0.4 -60 180 -20 20 60 100 °C 160 Tj Tj 11 Typ. capacitances 12 Forward character. of reverse diode C = f (VDS) IF = f (VSD) parameter: V GS=0, f=1 MHz, Tj = 25 °C parameter: Tj 10 3 10 1 pF A Ciss 10 0 C IF 10 2 Coss 10 1 10 -1 Tj = 25 °C typ Crss Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 0 0 6 12 18 24 36 V VDS 10 -2 0 0.4 0.8 1.2 1.6 2 2.4 V 3 VSD Page 6 2016-05-30 Rev. 2.0 BSS87 13 Typ. gate charge 14 Drain-source breakdown voltage VGS = f (QG ); parameter: VDS , ID = 0.26 A pulsed, Tj = 25 °C V(BR)DSS = f (Tj) 16 291 V V(BR)DSS V VGS 12 10 276 271 266 261 256 8 0.2 VDS max 251 0.5 VDS max 246 6 0.8 V DS max 241 236 4 231 226 2 221 0 0 1 2 3 4 nC 216 -60 6 QG -20 20 60 100 °C 180 Tj Page 7 2016-05-30 BSS87 Rev. 2.0 Package Outline SOT-89 Footprint Soldering type: Reflow soldering Tape and Reel Dimensions in mm Page 8 2016-05-30 240VSIPMOSSmallSignalTransistor BSS87 RevisionHistory BSS87 Revision:2016-06-09,Rev.2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2016-06-09 Release of final version TrademarksofInfineonTechnologiesAG AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™, EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™, ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™, PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™, SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™. 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Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. 9 Rev.2.0,2016-06-09