Diode Semiconductor Korea MBR1630 - - - MBR16100 VOLTAGE RANGE: 30 - 100 V CURRENT: 16 A SCHOTTKY BARRIER RECTIFIER FEATURES TO-220AC High s urge capacity. 2.8± 0.1 For us e in low voltage, high frequency inverters , free 111wheeling, and polarity protection applications . 4.5± 0.2 10.2± 0.2 1.4± 0.2 Metal s ilicon junction, m ajority carrier conduction. φ 3.8± 0.15 High current capacity, low forward voltage drop. MECHANICAL DATA 8.9± 0.2 19.0± 0.5 Guard ring for over voltage protection. PIN 2 1 Cas e:JEDEC TO-220AC,m olded plas tic body 3.5± 0.3 Term inals :Leads, s olderable per MIL-STD-750, 1 1 13.8± 0.5 2.6± 0.2 Method 2026 Polarity: As m arked 0.9± 0.1 0.5± 0.1 5.0± 0.1 Pos ition: Any Weight: 0.069 ounces,1.96 gram Dimensions in millimeters MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 am bient tem perature unles s otherwis e s pecified. Single phase,half wave,60Hz,resistive or inductive load.For capactive load,derate current by 20%. MBR 1630 MBR 1635 MBR MBR MBR 1640 1645 1650 MBR 1660 MBR MBR UNITS 1690 16100 Maximum recurrent peak reverse voltage V RRM 30 35 40 45 50 60 90 100 V Maximum RMS V oltage V RMS 21 25 28 32 35 42 63 70 V Maximum DC blocking voltage V DC 30 35 40 45 50 60 90 100 V Maximum average forw ard total device m rectified current @TC = 125°C IF(AV) 16 A Peak forw ard surge current 8.3ms single half b sine-w ave superimposed on rated load IFSM 150 A Maximum forw ard (IF=16A,TC=25 ) 0.63 voltage (Note 1) 0.75 0.85 VF (IF=16A,TC=125 Maximum reverse current at rated DC blocking voltage ) @TC =25 @TC =125 V 0.57 IR 0.65 0.2 1.0 40 50 mA Maximum thermal resistance (Note2) R θJC 1.5 Operating junction temperature range TJ - 55 ---- + 150 TSTG - 55 ---- + 175 Storage temperature range - /W NOTE: 1. Pulse test:300μs pulse width,1% duty cy cle. 2. Thermal resistance from junction to case. www.diode.kr Diode Semiconductor Korea MBR1630 - - - MBR16100 FIG.2 --MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT AMPERES AVERAGE FORWARD RECTIFIED CURRENT,AMPERES FIG.1 -- FORWARD CURRENT DERATING CURVE 20 Resistive or Inductive Load 16 12 8 4 0 0 50 100 150 150 TJ=TJ max. 8.3ms SINGLE HALF SINE-WAVE 125 100 75 50 25 0 AMBIENT TEMPERATURE,℃ FIG.4--TYPICAL REVERSE CHARACTERISTICS INSTANTANEOUS REVERSE LEAKAGE CURRENT, MILLIAMPERES 50 AMPERES Pulse width=300μ s 1% Duty Cycle TJ=25 ℃ 1 0.1 MBR1630-MBR1645 MBR1650-MBR1660 MBR1690-MBR16100 0.01 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 INSTANTANEOUS FORWARD VOLTAGE,VOLTS JUNCTION CAPACITANCE,pF FIG.5--TYPICAL JUNCTION CAPACITANCE 4,000 TJ=25℃ f=1.0MHz Vsig=50mVp-p 1,000 MBR1635-MBR1645 100 MBR1650-MBR16100 0.1 1 10 REVERSE VOLTAGE,VOLTS 100 50 MBR1630-MBR1645 MBR1650-MBR16100 10 TJ=125℃ 1 TJ=75℃ 0.1 0.01 TJ=25 ℃ 0.001 0 20 40 60 80 100 PERCENT OF RATED PEAK REVERSE VOLTAGE,% TRANSIENT THERMAL IMPEDANCE , ℃/W INSTANTANEOUS FORWARD CURRENT FORWARD CHARACTERISTICS TJ=125 ℃ 100 NUMBER OF CYCLES AT 60Hz FIG.3 --TYPICAL INSTANTANEOUS 10 10 1 FIG.6--TYPICAL TRANSIENT THERMAL IMPEDANCE 100 10 1 0.1 0.01 0.1 1 10 100 PULSE DURATION,Sec www.diode.kr