DSK MBR1640 Schottky barrier rectifier Datasheet

Diode Semiconductor Korea
MBR1630 - - - MBR16100
VOLTAGE RANGE: 30 - 100 V
CURRENT: 16 A
SCHOTTKY BARRIER RECTIFIER
FEATURES
TO-220AC
High s urge capacity.
2.8± 0.1
For us e in low voltage, high frequency inverters , free
111wheeling, and polarity protection applications .
4.5± 0.2
10.2± 0.2
1.4± 0.2
Metal s ilicon junction, m ajority carrier conduction.
φ 3.8± 0.15
High current capacity, low forward voltage drop.
MECHANICAL DATA
8.9± 0.2
19.0± 0.5
Guard ring for over voltage protection.
PIN
2
1
Cas e:JEDEC TO-220AC,m olded plas tic body
3.5± 0.3
Term inals :Leads, s olderable per MIL-STD-750,
1 1
13.8± 0.5
2.6± 0.2
Method 2026
Polarity: As m arked
0.9± 0.1
0.5± 0.1
5.0± 0.1
Pos ition: Any
Weight: 0.069 ounces,1.96 gram
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
am bient tem perature unles s otherwis e s pecified.
Single phase,half wave,60Hz,resistive or inductive load.For capactive load,derate current by 20%.
MBR
1630
MBR
1635
MBR MBR MBR
1640 1645 1650
MBR
1660
MBR MBR
UNITS
1690 16100
Maximum recurrent peak reverse voltage
V RRM
30
35
40
45
50
60
90
100
V
Maximum RMS V oltage
V RMS
21
25
28
32
35
42
63
70
V
Maximum DC blocking voltage
V DC
30
35
40
45
50
60
90
100
V
Maximum average forw ard total device
m rectified current @TC = 125°C
IF(AV)
16
A
Peak forw ard surge current 8.3ms single half
b sine-w ave superimposed on rated load
IFSM
150
A
Maximum forw ard
(IF=16A,TC=25 )
0.63
voltage
(Note 1)
0.75
0.85
VF
(IF=16A,TC=125
Maximum reverse current
at rated DC blocking voltage
)
@TC =25
@TC =125
V
0.57
IR
0.65
0.2
1.0
40
50
mA
Maximum thermal resistance (Note2)
R θJC
1.5
Operating junction temperature range
TJ
- 55 ---- + 150
TSTG
- 55 ---- + 175
Storage temperature range
-
/W
NOTE: 1. Pulse test:300μs pulse width,1% duty cy cle.
2. Thermal resistance from junction to case.
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Diode Semiconductor Korea
MBR1630 - - - MBR16100
FIG.2 --MAXIMUM NON-REPETITIVE
FORWARD SURGE CURRENT
PEAK FORWARD SURGE CURRENT
AMPERES
AVERAGE FORWARD RECTIFIED
CURRENT,AMPERES
FIG.1 -- FORWARD CURRENT DERATING CURVE
20
Resistive or Inductive Load
16
12
8
4
0
0
50
100
150
150
TJ=TJ max.
8.3ms SINGLE HALF SINE-WAVE
125
100
75
50
25
0
AMBIENT TEMPERATURE,℃
FIG.4--TYPICAL REVERSE CHARACTERISTICS
INSTANTANEOUS REVERSE LEAKAGE
CURRENT, MILLIAMPERES
50
AMPERES
Pulse width=300μ s
1% Duty Cycle
TJ=25 ℃
1
0.1
MBR1630-MBR1645
MBR1650-MBR1660
MBR1690-MBR16100
0.01
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
INSTANTANEOUS FORWARD VOLTAGE,VOLTS
JUNCTION CAPACITANCE,pF
FIG.5--TYPICAL JUNCTION CAPACITANCE
4,000
TJ=25℃
f=1.0MHz
Vsig=50mVp-p
1,000
MBR1635-MBR1645
100
MBR1650-MBR16100
0.1
1
10
REVERSE VOLTAGE,VOLTS
100
50
MBR1630-MBR1645
MBR1650-MBR16100
10
TJ=125℃
1
TJ=75℃
0.1
0.01
TJ=25 ℃
0.001
0
20
40
60
80
100
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
TRANSIENT THERMAL IMPEDANCE , ℃/W
INSTANTANEOUS FORWARD CURRENT
FORWARD CHARACTERISTICS
TJ=125 ℃
100
NUMBER OF CYCLES AT 60Hz
FIG.3 --TYPICAL INSTANTANEOUS
10
10
1
FIG.6--TYPICAL TRANSIENT THERMAL IMPEDANCE
100
10
1
0.1
0.01
0.1
1
10
100
PULSE DURATION,Sec
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