Microsemi APT150GN60JDQ4 Power semiconductors power modules rf power mosfet Datasheet

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CONTENTS
HIGH VOLTAGE SMPS TRANSISTORS
Page No.
IGBTs (Insulated Gate Bipolar Transistors).......................................................................3-5
SiC and Power MOS 8TM MOSFETs / FREDFETs................................................................6-8
Ultra-Fast Low Gate Charge MOSFETs............................................................................... 9
CoolMOSTM MOSFETs....................................................................................................... 10
High Voltage Linear MOSFETs.......................................................................................... 10
DIODES
SiC Schottky and Ultra Fast Recovery Diodes .............................................................11-13
hIGH VOLTAGE RF MOSFETS......................................................................................... 14
hIGH fREQUENCY rf mOSFETS................................................................................... 14
driver-rf mosfet hybrids....................................................................................... 15
Reference Design kitS.............................................................................................. 15
Power Modules
Contents........................................................................................................................... 16
Electrical Configuration.................................................................................................... 17
Packaging......................................................................................................................... 18
Know How and Capabilities........................................................................................19-20
Part Numbering System.................................................................................................... 21
IGBTs (Insulated Gate Bipolar Transistors) .................................................................22-26
MOSFETs.....................................................................................................................27-31
Renewable Energy Power Modules.............................................................................31-32
SiC Power Modules.....................................................................................................33-35
Diodes and Rectifiers ..................................................................................................36-38
Package Outline Drawings............................................................................... 39-43
“CoolMOS” comprise a new family of transistors developed by Infineon Technologies AG.
“CoolMOS” is a trademark of Infineon Technologies AG.
ASPM®, Power MOS 7® & T-MAX® are registered trademarks of Microsemi Corporation.
Insulated Gate Bipolar Transistors (IGBTs)
IGBTs from Microsemi
IGBT products from Microsemi provide high quality solutions for a wide range of high voltage, high power applications. The switching
frequency range spans from DC for minimal conduction loss to 150kHz for very high power density SMPS applications. The frequency
range for each product type is shown in the graph below. Each IGBT product represents the latest in IGBT technology, providing the
best possible performance/cost combination for the targeted application. There are six product series that utilize three different IGBT
technologies: Non-Punch-Through (NPT), Punch-Through (PT) and Field Stop.
IGBT Switching Frequency Ranges (kHz, hard switched)
0
20
40
60
80
100
120
140
160
Field Stop
600V
Power MOS 8TM PT
650V
900V
Power MOS 8TM NPT (NEW!)
Power MOS 8TM PT
Field Stop
1200V
Power MOS 7TM PT
Power MOS 8TM NPT
Note: Frequency ranges shown are typical for a 50A IGBT. Refer to product data sheet max frequency vs current graph for more information.
Standard
Series
Voltage
Ratings (V)
Technology
MOS 7™
1200
PT
MOS 8™
600, 650, 900,
1200
PT, NPT
600, 1200
Field Stop
Field Stop
Trench Gate
Easy to
Parallel
Short Circuit Comment
SOA
Ultra-low gate charge
Highest efficiency
X
Product Options
X
Lowest conduction loss
All standard IGBT products are available as a single IGBT or as a Combi product packaged with an anti-parallel DQ series
diode. Package options include TO-220, TO-247, T-MAX®, TO-264, and SOT-227. Customized products are available; contact
factory for details.
3
Insulated Gate Bipolar Transistors (IGBTs)
BVces
Volts
POWER MOS 8TM
•
•
•
•
NPT Technology
High Speed Switching
Low Switching Losses
Easy to Parallel
VCE(ON)
Typ 25OC
Ic2
100oC
Maximum Ic
at Frequency
Part Number
50 kHz
SINGLE
Package
Style
80 kHz
2.5
25
25
21
2.5
25
25
21
2.5
40
38
28
2.5
40
38
28
2.5
50
48
36
2.5
50
48
36
25 kHz
50 kHz
1200
2.5
70
66
42
2.5
70
66
42
2.5
70*
42
30
2.5
85
72
46
2.5
85
72
46
2.5
85*
46
31
APT25GR120B
APT25GR120S
APT40GR120B
APT40GR120S
APT50GR120B2
APT50GR120L
TO-247
D3
TO-247
D3
T-MAX®
TO-264
APT70GR120B2
APT70GR120L
APT70GR120J
APT85GR120B2
APT85GR120L
APT85GR120J
T-MAX®
TO-264
ISOTOP®
T-MAX®
TO-264
ISOTOP®
TO-247[B]
combi (IGbt & diode)
50 kHz
80 kHz
2.5
25
25
21
APT25GR120BD15
2.5
25
25
21
APT25GR120SD15
2.5
25
25
21
APT25GR120BSCD10
2.5
25
25
21
APT25GR120SSCD10
1200
2.5
40
38
28
APT40GR120B2D30
2.5
40
38
28
APT40GR120B2SCD10
25 kHz
50 kHz
2.5
50*
42
32
APT50GR120JD30
2.5
70*
42
30
APT70GR120JD60
2.5
85*
46
31
APT85GR120JD60
150 kHz
1.9
New!
650V
650
45
1.9
70
1.9
95
combi (IGBT & Diode)
1.9
45
1.9
650
1.9
45
70
1.9
70
1.9
POWER MOS 8TM
•
•
•
•
PT Technology
Fast Switching
Highest Efficiency
Combi with High
Speed DQ Diode
95
SINGLE
600
2.0
2.0
2.0
2.0
2.0
2.0
2.5
900
2.5
2.5
2.5
36
44
54
68
80
102
35
43
64
80
combi (IGbt & “DQ” FRED)
2.0
2.0
600
2.0
2.0
2.0
2.0
2.5
2.5
900
2.5
2.5
2.5
2.5
36
44
54
60
68
80
27
35
43
46
64
80
31
25
APT45GR65B
TO-247
39
APT70GR65B
TO-247
41
APT95GR65B2
T-MAX®
25
APT45GR65BSCD10
TO-247 (SiC Diode)
18
39
APT45GR65B2DU30
APT70GR65B2SCD30
T-MAX® (DU Diode)
T-MAX® (SiC Diode)
APT70GR65B2DU40
T-MAX® (DU Diode)
APT95GR65JDU60
ISOTOP® (DU Diode)
APT36GA60B
APT44GA60B
APT54GA60B
APT68GA60B
APT80GA60B
APT102GA60B2
TO-247 or D3
TO-247 or D3
TO-247 or D3
TO-247 or D3
TO-247 or D3
T-MAX® or TO-264
APT35GA90B
APT43GA90B
APT64GA90B
APT80GA90B
TO-247 or D3
TO-247 or D3
TO-247 or D3
TO-247 or D3
APT36GA60BD15
APT44GA60BD30
APT54GA60BD30
APT60GA60JD60
APT68GA60B2D40
APT80GA60LD40
TO-247 or D3
TO-247 or D3
TO-247 or D3
ISOTOP®
T-MAX® or TO-264
TO-264
APT27GA90BD15
APT35GA90BD15
APT43GA90BD30
APT46GA90JD40
APT64GA90B2D30
APT80GA90LD40
TO-247 or D3
TO-247 or D3
TO-247 or D3
ISOTOP®
T-MAX® or TO-264
TO-264
150 kHz
50 kHz
100 kHz
150 kHz
200 kHz
100 kHz
150 kHz
69
31
30
52
50 kHz
100 kHz
40 kHz
80 kHz
59
50
38
35
50 kHz
80 kHz
25 kHz
50 kHz
21
26
30
35
40
51
17
21
29
34
17
20
23
27
31
39
10
13
19
23
50 kHz
80 kHz
25 kHz
50 kHz
21
26
30
48
35
40
14
17
21
33
29
34
ISOTOP® (DQ)
ISOTOP® (DQ)
ISOTOP® (DQ)
D3 PAK[S]
Part Numbers for D3
packages - replace
"B” with “S” in part
number
200 kHz
100 kHz
52
TO-247 (DQ)
D3 (DQ)
TO-247 (SiC SBD)
D3 (SiC SBD)
T-MAX® (DQ)
T-MAX® (SiC SBD)
17
20
23
36
27
31
8
10
13
21
19
23
T-MAX®[B2]
TO-264[L]
264-MAXTM[L2]
current @ Frequency Test Conditions: Tj = 125oC, Tc = 100oC except Isotop® where Tc = 80oC, Vcc = 67% rated voltage Hard Switch
Part Numbers for
TO-264 packages replace "B2" with
"L" in part number
ISOTOP®[J]
SOT-227
C
G
E
* Ic2 for ISOTOP packages measured at 70°C for 1200V NPT IGBTs
®
Datasheets available on www.microsemi.com
4
All Products RoHS Compliant
Insulated Gate Bipolar Transistors (IGBTs)
BVces
Volts
FIELD STOP
• Trench Technology
• Short Circuit
Rated
• Lowest
Conduction Loss
• Easy Paralleling
• Combi with High
Speed DQ Diode
VCE(ON)
Typ 25oC
SINGLE
Ic2
100oC
1.5
1.5
1.5
1.5
600
1.5
1.5
1.5
1.5
1.5
24
37
64
93
123
135
190
230
158
1.7
1.7
1.7
1200
1.7
1.7
1.7
1.7
33
46
66
70
99
120
99
combi (IGbt & "dq" FRED)
Power MOS 7®
and IGBT
• PT Technology
• Ultra-low Gate
Charge
• Combi with High
Speed DQ Diode
1.5
1.5
1.5
600
1.5
1.5
1.5
1.5
1.5
24
37
64
93
123
135
190
158
1.7
1.7
1.7
1200
1.7
1.7
1.7
1.7
22
33
46
57
66
70
99
SINGLE
3.3
3.3
3.3
1200
3.3
3.3
3.3
combi
(IGbt & "dq"
3.3
3.3
1200
3.3
3.3
3.3
3.3
33
46
54
34
91
57
FRED)
Maximum Ic
at Frequency
Part Number
15 kHz
15
20
30
42
75
54
79
103
100
30 kHz
10
14
21
30
47
39
57
75
66
10 kHz
20 kHz
15 kHz
30 kHz
19
24
32
44
45
58
60
13
17
22
27
30
38
36
15
20
30
42
75
54
79
100
10 kHz
20 kHz
TO-247
TO-247
TO-247
TO-247
ISOTOP®
T-MAX®
T-MAX®
T-MAX®
ISOTOP®
APT25GN120BG
APT35GN120BG
APT50GN120B2G
APT100GN120J
APT75GN120B2G
APT100GN120B2G
APT150GN120J
TO-247 or D3
TO-247
T-MAX®
ISOTOP®
T-MAX® or TO-264
T-MAX®
ISOTOP®
10
APT20GN60BDQ1G
14
APT30GN60BDQ2G
21
APT50GN60BDQ2G
30
APT75GN60LDQ3G
47 APT150GN60JDQ4
39 APT100GN60LDQ4G
57 APT150GN60LDQ4G
66
APT200GN60JDQ4
TO-247
TO-247
TO-247
TO-264
ISOTOP®
TO-264
TO-264
ISOTOP®
10
APT15GN120BDQ1G
13
APT25GN120B2DQ2G
17
APT35GN120L2DQ2G
22
APT75GN120JDQ3
22
APT50GN120L2DQ2G
27
APT100GN120JDQ4
36
APT150GN120JDQ4
TO-247 or D3
T-MAX®
264-MAX™
ISOTOP®
264-MAX™
ISOTOP®
ISOTOP®
12
APT25GP120BG
15
APT35GP120BG
18
APT45GP120BG
18
APT45GP120J
24
APT75GP120B2G
23
APT75GP120J
TO-247
TO-247
TO-247
ISOTOP
T-MAX®
ISOTOP
7
APT13GP120BDQ1G
12
APT25GP120BDQ1G
15
APT35GP120B2DQ2G
18
APT45GP120B2DQ2G
18
APT45GP120JDQ2
23
APT75GP120JDQ3
TO-247
TO-247
T-MAX®
T-MAX®
ISOTOP
ISOTOP
40 kHz
19
24
29
28
42
40
20 kHz
20
33
46
54
34
57
APT20GN60BG
APT30GN60BG
APT50GN60BG
APT75GN60BG
APT150GN60J
APT100GN60B2G
APT150GN60B2G
APT200GN60B2G
APT200GN60J
20 kHz
14
19
24
36
32
44
60
40 kHz
11
19
24
29
28
40
Package
Style
TO-220[K]
D3 PAK[S]
TO-247[B]
Part Numbers for D3
packages replace "B" with
"S" in part number
T-MAX®[B2]
TO-264[L]
Part Numbers for L
packages replace "B2" with
"L" in part number
ISOTOP®[J]
SOT-227
C
G
current @ Frequency Test Conditions: Tj = 125 C, Tc = 100 C except Isotop® where Tc = 80 C, Vcc = 67% rated voltage Hard Switch
o
Datasheets available on www.microsemi.com
o
o
5
All Products RoHS Compliant
E
SiC and Power MOS 8 MOSFETs
SiC Silicon Carbide MOSFETs
BVDSS
Volts
1200
RDS(ON)
Ohms
ID(Cont)
Amps
Part Number
0.080
40
APT40SM120B
Package Style
TO-247
0.080
40
APT40SM120J
ISOTOP®
0.050
50
APT50SM120B
TO-247
0.050
50
APT50SM120J
ISOTOP®
Power MOS 8TM MOSFETs / FREDFETs
(fast body diode)
Power MOS 8™ is Microsemi's latest family of high speed, high voltage (500-1200V)
N-channel switch-mode power transistors with lower EMI characteristics and lower cost
compared to previous generation devices. These new MOSFETs / FREDFETs have been
optimized for both hard and soft switching in high frequency, high voltage applications rated
above 500W. There are 2 product types in the Power MOS 8™ MOSFET family:
1)
MOSFET
2)
FREDFETs have a fast recovery body diode characteristic, providing high commutation dv/dt
ruggedness and high reliability in ZVS circuits.
Features • Fast switching
• Low EMI
• Quiet switching
• Avalanche energy rated
• Low gate charge
• Lower cost
Applications
•
•
•
•
•
•
•
•
•
Power factor correction
Server and telecom power systems
Solar inverters
Semiconductor capital equipment
Induction heating
Arc welding
Plasma cutting
Battery chargers
Medical
Quiet Switching
The new Power MOS 8™ series is a result of extensive research into quiet switching. Input and reverse transfer capacitance values as well as their ratio were set at specific values to achieve quiet switching with minimal switching loss. The
Power MOS 8™ series of devices are inherently quiet switching, stable when connected in parallel, very efficient, and
lower cost than previous generations.
Body Diode Options
As with previous generation products, Power MOS 8™ MOSFETs and FREDFETs are available in all voltage ratings. A
FREDFET is a MOSFET with a faster recovery intrinsic body diode. This results in improved reliability in ZVS circuits due
to shorter minority carrier lifetime and increased commutation dv/dt ruggedness. If a fast recovery body diode is not
needed, MOSFET versions are available.
6
TM
Power MOS 8TM MOSFETs / FREDFETs
BV(DSS)
Volts
RDS(ON)
Max
ID
MOSFET
Part #
3.80
5
APT4M120K
TO-220
APT4F120K
TO-220
2.40
7
APT7F120B
TO-247 or D3
1.10
8
APT7M120B
14
APT14M120B
24
APT24M120B2
APT13F120B
TO-247 or D3
TO-247
23
APT22F120B2
T-MAX® or TO-264
T-MAX® or TO-264
0.58
27
APT26F120B2
T-MAX® or TO-264
0.58
18
APT17F120J
ISOTOP®
0.53
29
APT28M120B2
T-MAX® or TO-264
0.53
19
APT19M120J
ISOTOP®
35
APT34M120J
6
APT6M100K
0.32
0.29
33
2.80
2.50
1.80
8
APT7F100B
APT9F100B
APT9M100B
TO-247
APT14F100B
TO-247 or D3
TO-247 or D3
APT17F100B
0.44
30
APT29F100B2
T-MAX® or TO-264
0.44
20
APT19F100J
ISOTOP®
18
APT18M100B
TO-247 or D3
TO-247
0.38
32
APT31M100B2
35
APT34F100B2
T-MAX® or TO-264
0.38
21
APT21M100J
23
APT22F100J
ISOTOP®
0.33
37
APT37M100B2
T-MAX® or TO-264
0.33
25
APT25M100J
ISOTOP®
45
APT45M100J
0.20
0.18
42
1.50
1.35
8
0.80
13
19
0.39
APT7F80K
12
APT11F80B
25
ISOTOP®
18
APT17F80B
TO-220
TO-220
TO-247 or D3
TO-247
TO-247 or D3
TO-247 or D3
23
APT22F80B
APT24M80B
0.24
0.21
7
APT18M80B
0.43
41
APT38F80B2
T-MAX® or TO-264
47
APT44F80B2
T-MAX® or TO-264
31
APT29F80J
ISOTOP®
0.19
49
APT48M80B2
T-MAX® or TO-264
0.19
33
APT32M80J
ISOTOP®
0.10
Datasheets available on www.microsemi.com
57
60
Part Numbers for TO-264
packages - replace "B2"
with "L" in part number
TO-247 or D3
APT41M80B2
0.11
TO-264[L]
TO-247 or D3
43
0.21
T-MAX®[B2]
ISOTOP®
APT12M80B
0.58
0.53
APT41F100J
APT8M80K
0.90
Part Numbers for D3 packages - replace "B” with
“S” in part number
TO-247 or D3
17
0.70
D3 PAK[S]
TO-247
APT14M100B
0.78
TO-220
TO-247
14
14
ISOTOP®
TO-220
APT8M100B
0.98
0.88
APT5F100K
9
9
TO-247[B]
ISOTOP®
7
1.60
1.40
APT32F120J
5
2.00
TO-220[K]
TO-247
14
0.70
0.63
800
Package
Style
4
1.20
1000
FREDFET
Part #
4.20
2.10
1200
ID
APT53F80J
APT58M80J
ISOTOP®
ISOTOP®
7
ISOTOP®[J]
SOT-227
(ISOLATED BASE)
All Products RoHS Compliant
Power MOS 8TM MOSFETs / FREDFETs
BV(DSS)
Volts
600
500
RDS(ON)
Max
ID
MOSFET
Part #
ID
FREDFET
Part #
Package
Style
0.62
12
APT12F60K
TO-220
0.43
16
APT15F60B
TO-247 or D3
0.37
19
APT18F60B
TO-247 or D3
0.29
24
APT23F60B
TO-247 or D3
0.22
30
APT28F60B
TO-247 or D3
0.19
36
APT34M60B
36
APT34F60B
TO-247
0.15
45
APT43M60B2
45
APT43F60B2
T-MAX® or TO-264
0.15
31
APT30M60J
31
APT30F60J
ISOTOP®
0.11
60
APT56M60B2
60
APT56F60B2
T-MAX® or TO-264
TO-247[B]
0.11
42
APT39M60J
42
APT39F60J
ISOTOP®
0.09
70
APT66M60B2
70
APT66F60B2
T-MAX® or TO-264
0.09
49
APT47M60J
49
APT47F60J
ISOTOP®
0.055
84
APT80M60J
84
APT80F60J
ISOTOP®
0.39
15
APT15F50K
TO-220[K] or TO-220[KF]*
0.30
20
APT20F50B
TO-247 or D3
0.24
24
APT24F50B
TO-247 or D3
0.19
30
APT30F50B
TO-247 or D
0.15
37
APT37F50B
TO-247 or D3
0.13
43
APT42F50B
TO-247 or D3
3
0.10
56
APT56M50B2
56
APT56F50B2
T-MAX® or TO-264
0.10
38
APT38M50J
38
APT38F50J
ISOTOP®
0.075
75
APT75M50B2
75
APT75F50B2
T-MAX® or TO-264
0.075
51
APT51M50J
51
APT51F50J
ISOTOP®
0.062
84
APT84M50B2
84
APT84F50B2
T-MAX® or TO-264
0.062
58
APT58M50J
58
APT58F50J
ISOTOP®
0.036
103
APT100M50J
103
APT100F50J
ISOTOP®
TO-220[K] or TO-220[KF]*
D3 PAK[S]
Part Numbers for D3 packages
- replace "B" with "S" in part
number
T-MAX®[B2]
* Available on APT15F50K
Low Voltage Power MOS V® MOSFETs / FREDFETs
300
200
0.085
40
APT30M85BVRG
40
APT30M85BVFRG
TO-247
0.070
48
APT30M70BVRG
48
APT30M70BVFRG
TO-247 or D3
0.040
70
APT30M40JVRG
70
APT30M40JVFRG
ISOTOP®
0.019
130
APT30M19JVR
130
APT30M19JVFR
ISOTOP®
0.045
56
APT20M45BVRG
56
APT20M45BVFRG
TO-247
0.038
67
APT20M38BVRG
37
APT20M38BVFRG
TO-247 or D3 or T/R
0.022
100
APT20M22B2VRG
100
APT20M22B2VFRG
T-MAX® or TO-264
0.011
175
APT20M11JVR
175
APT20M11JVFR
ISOTOP®
TO-264[L]
Part Numbers for TO-264
packages - replace "B2" with
"L" in part number
ISOTOP®[J]
SOT-227
(ISOLATED BASE)
Datasheets available on www.microsemi.com
8
All Products RoHS Compliant
Ultrafast, Low Gate Charge MOSFETs
For 250 kHz - 2 MHz Switching Applications
These devices are ideally suited for high frequency
and pulsed high voltage applications.
The Ultrafast, Low Gate Charge MOSFET family combines the
lowest gate charge available in the industry with Microsemi’s
proprietary self-aligned aluminum metal gate structure. The
result is a MOSFET capable of extremely fast switching speeds
and very low switching losses. The metal gate structure and the
layout of these chips provide an internal series gate resistance
(EGR) an order of magnitude lower than competitive devices
built with a polysilicon gate.
Typical Applications:
•
•
•
•
Features:
BV(DSS)
Volts
1200
1000
800
500
Class D amplifiers up to 2 MHz
High voltage pulsed DC
AM transmitters
Plasma deposition/etch
Benefits:
l
Series Gate Resistance (Rg) <0.1 ohm
l
Fast switching, uniform signal propagation
l
Tr and Tf times of <10ns
l
Pulse power applications
l
Industry's Lowest Gate Charge
l
Fast switching, reduced gate drive power
RDS(ON)
Max
ID
4.700
3.5
APT1204R7KFLLG
TO-220
4.700
3.5
APT1204R7BFLLG
TO-247 or D3
1.400
9
APT1201R4BFLLG
TO-247
MOSFET Part #
FREDFET Part #
Package
Style
0.670
18
APT12067B2LLG
T-MAX®
0.670
17
APT12067JLL
ISOTOP®
0.570
22
APT12057B2LLG
T-MAX®
0.570
19
APT12057JLL
ISOTOP®
0.900
12
APT10090BLLG
TO-247
0.780
14
APT10078BLLG
TO-247 or D3
0.450
23
APT10045B2LLG
T-MAX® or TO-264
0.450
21
APT10045JLL
ISOTOP®
0.350
28
APT10035B2LLG
T-MAX®
0.350
25
APT10035JLL
ISOTOP®
0.260
38
APT10026L2FLLG
TO-264 MAX
0.260
30
APT10026JLL
APT10026JFLL
ISOTOP®
0.210
37
APT10021JLL
APT10021JFLL
ISOTOP®
0.140
52
APT8014L2LLLG
APT8014L2FLLG
TO-264 MAX
0.110
51
APT8011JLL
APT8011JFLL
T-MAX® or TO-264
0.200
38
APT8020B2LL
T-MAX®
0.200
33
APT8020JLL
ISOTOP® or D3 or T/R
0.140
35
APT5014BLLG
TO-247
0.100
46
APT5010B2LLG
APT5010B2FLLG
T-MAX® or TO-264
0.065
67
APT50M65B2LLG
APT50M65B2FLLG
T-MAX® or TO-264
0.065
58
APT50M65JLLG
APT50M65JFLLG
ISOTOP®
0.075
51
APT50M75JLL
APT50M75JFLL
ISOTOP®
0.075
57
APT50M75B2LLG
T-MAX® or TO-264
0.050
71
APT50M50JLL
ISOTOP®
0.038
88
APT50M38JLL
ISOTOP®
Datasheets available on www.microsemi.com
9
T-MAX®[B2]
TO-247[B]
ISOTOP®[J]
SOT-227
(ISOLATED BASE)
All Products RoHS Compliant
CoolMOS MOSFETs
TM
BVDSS
Volts
RDS(ON)
Ohms
ID(Cont)
Amps
Part Number
Package Style
c3 Technology
900
0.120
36
APT36N90BC3G
TO-247
0.450
11
APT11N80KC3G
TO-220
0.450
800
0.145
11
APT11N80BC3G
TO-247
34
APT34N80B2C3G
T-MAX® or TO-264
TO-220[K]
0.145
34
APT34N80LC3G
TO-264
0.035
94
APT94N65B2C3G
T-MAX® or TO-264
0.070
47
APT47N65BC3G
TO-247 or D3
0.070
47
APT47N60BC3G
TO-247 or D3
600
0.035
77
APT77N60JC3
ISOTOP®
0.042
94
APT94N60L2C3G
264-MAX™
650
TO-247[B]
D3 PAK[S]
TO-268
T-MAX®[B2]
Server Series
0.045
60
APT60N60BCSG
TO-247 or D3 or T/R
c6 Technology
0.041
77
APT77N60BC6
TO-247 or D3
0.070
53
APT53N60BC6
TO-247 or D3
600
TO-264[L]
0.099
38
APT38N60BC6
TO-247 or D 0.125
30
APT30N60KC6
TO-220
0.125
30
APT30N60BC6
TO-247 or D3
0.035
106
APT106N60B2C6
T-MAX™ or TO-264
650
0.041
85
APT97N65B2C6
T-MAX™ or TO-264
0.035
94
APT94N65B2C6
T-MAX™
264-MAX™ [L2]
3
ISOTOP®[J]
SOT-227
(ISOLATED BASE)
“CoolMOS” comprise a new family of transistors developed by Infineon Technologies AG.
“CoolMOS” is a trademark of Infineon Technologies AG.
Linear MOSFETs
What is a Linear MOSFET?
A MOSFET specifically designed to be more robust than a standard MOSFET when
operated with both high voltage and high current near DC conditions (>100msecs).
The Problem with SMPS MOSFETs
MOSFETs optimized for high frequency SMPS applications have poor high voltage DC
SOA. Most SMPS type MOSFETs over-state SOA capability at high voltage on the data sheets.
Above ~30V and DC conditions, SOA drops faster than is indicated by PD limited operation.
For pulsed loads (t<10ms) there is generally no problem using a standard MOSFET.
Technology Innovation
Introduced in 1999, Microsemi modified its proprietary patented self-aligned metal gate
MOSFET technology for enhanced performance in high voltage, linear applications. These Linear
MOSFETs typically provide 1.5-2.0 times the DC SOA capability at high voltage compared to
other MOSFET technologies optimized for switching applications.
BVDSS
Volts
RDS(ON)
Ohms
ID(Cont)
Amps
SOA
Watts
Part Number
1000
0.600
18
325
APL1001J
600
0.125
0.125
49
43
325
325
APL602B2G
APL602J
500
0.090
0.090
58
52
325
325
APL502B2G
APL502J
Designers will need Linear MOSFETs when…
• High Current & > 200V >100msec
• Used as a variable power resistor
• Soft start application (limit surge currents)
• Linear amplifier circuit
Typical Applications…
• Active loads above 200 volts such as DC dynamic
loads for testing power supplies, batteries, fuel cells, etc.
• High voltage, high current constant current sources.
Package Style
ISOTOP®[J]
SOT-227
(ISOLATED
BASE)
T-MAX®[B2]
TO-264[L]
Part Numbers for TO-264 packages - replace ”B2” with “L” in part number
Datasheets available on www.microsemi.com
10
All Products RoHS Compliant
Ultra Fast Recovery Diodes
Microsemi PPG offers five series of discrete diode products: a new DL series low VF ultra-soft recovery, the medium speed medium VF
D series, the high speed DQ series, the very high speed DS series, and the silicon Schottky S series. These series of diodes are designed
to provide high quality solutions to a wide range of high voltage, high power application requirements, ranging from fast recovery for
continuous conduction mode power factor correction to low conduction loss for output rectification. Distinguishing features, technology
used, and applications for each product family are summarized in the table below.
Series
Voltage
Ratings
Features
Applications
Comment
Output rectifier
Resonant circuits
Ultra-soft recovery minimizes or
eliminates snubber
DL
600
Low VF
Ultra-soft recovery
Avalanche Rated
D
200, 300, 400,
600, 1000, 1200
Medium VF
Medium Speed
DQ
600, 1000, 1200
High speed
Avalanche Rated
DS
600
Very high speed
Schottky
200
Low VF
Avalanche rated
SiC
Schottky
650, 1200, 1700
Zero Reverse Recovery
Freewheeling Diode
Output rectifier
DC-DC converter
PFC
Freewheeling Diode
DC-DC converter
High frequency PFC
Output rectifier
Freewheeling Diode
DC-DC converter
PFC,
Freewheeling Diode
DC-DC converter
Proprietary platinum process
Stepped epi improves softness
Proprietary platinum process
Proprietary platinum process
Low switching losses,
high power density and
high temperature operation
The graph below shows the relative recovery speed and forward voltage positions of 600V DL, D, DQ and DS series diodes.
11
SiC SChottky Diodes
SiC Schottky Diodes
Volts
SINGLE
1700
1200
650
DUAL
1200
650
IF (avg)
Amps
VFvolts
Typ 25° C
Diode
Series
Part
Number
10
10
10
20
20
30
30
10
20
30
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
SCE
SCD
SCD
SCD
SCD
SCD
SCD
SCD
SCD
SCD
APT10SCE170B
APT10SCD120B
APT10SCD120K
APT20SCD120B
APT20SCD120S
APT30SCD120B
APT30SCD120S
APT10SCD65K
APT20SCD65K
APT30SCD65B
TO-247
TO-247
TO-220
TO-247
D3
TO-247
D3
TO-220
TO-220
TO-247
2 x 10
2 x 10
1.5
1.5
SCD
SCD
APT10SCD120BCT
APT10SCD65KCT
TO-247
TO-220
Package Style
Ultra Fast Recovery Diodes
Volts
IF (avg)
Amps
QRR (nC)Diode
VF (volts) tRR(ns)
O
C Series
Typ
O
O
Typ 25 C Typ 25 C at I =125
Part Number
I (avg)
15
SINGLE
15
15
15
30
1200
30
30
40
60
60
75
15
15
15
30
1000
30
30
40
60
60
75
15
15
15
15
30
600
30
30
40
60
60
75
100
30
400
60
30
30
200
60
60
100
Datasheets available on www.microsemi.com
F
2.8
2.8
2.0
2.0
2.8
2.8
2.0
2.8
2.8
2.0
2.8
2.5
2.5
1.9
2.5
2.5
1.9
2.5
2.5
1.9
2.5
2.0
2.0
1.6
1.6
2.0
2.0
1.6
2.0
2.0
1.6
2.0
1.25
1.3
1.3
1.1
0.83
1.1
0.83
0.89
21
21
32
32
24
24
31
26
30
38
32
20
20
28
22
22
29
24
29
34
33
16
16
21
21
19
19
23
22
26
40
29
45
22
30
21
25
30
35
40
F
960
960
1300
1300
1800
1800
3450
2200
2800
4000
3340
810
810
1550
1250
1250
2350
1430
2325
3600
2660
250
250
520
520
400
400
700
480
640
920
650
3800
360
540
150
448
250
490
690
DQ
DQ
D
D
DQ
DQ
D
DQ
DQ
D
DQ
DQ
DQ
D
DQ
DQ
D
DQ
DQ
D
DQ
DQ
DQ
D
D
DQ
DQ
D
DQ
DQ
D
DQ
DL
D
D
D
Schottky
D
Schottky
Schottky
12
APT15DQ120BG
APT15DQ120KG
APT15D120BG
APT15D120KG
APT30DQ120BG
APT30DQ120KG
APT30D120BG
APT40DQ120BG
APT60DQ120BG
APT60D120BG
APT75DQ120BG
APT15DQ100BG
APT15DQ100KG
APT15D100KG
APT30DQ100BG
APT30DQ100KG
APT30D100BG
APT40DQ100BG
APT60DQ100BG
APT60D100BG
APT75DQ100BG
APT15DQ60BG
APT15DQ60KG
APT15D60BG
APT15D60KG
APT30DQ60BG
APT30DQ60KG
APT30D60BG
APT40DQ60BG
APT60DQ60BG
APT60D60BG
APT75DQ60BG
APT100DL60BG
APT30D40BG
APT60D40BG
APT30D20BG
APT30S20BG
APT60D20BG
APT60S20BG
APT100S20BG
Package
Style
TO-247
TO-220
TO-247
TO-220
TO-220[K]
TO-247
TO-220
TO-247
TO-247
TO-247
TO-247 or D3
TO-247
TO-247
D3 PAK[S]
TO-220
TO-268
TO-220
TO-247
TO-247
TO-247
TO-247
TO-247
TO
TO-247 or D3
-2
47
TO-247
TO-247
TO-220
TO-247
TO-220
TO-247[B]
TO-247
TO-220
TO-247
TO-247
TO-247
TO-247 or D3
TO-247
TO-247
TO-247
TO-247
TO-247
T-MAX®[B2]
TO-247 or D3
TO-247
Part Numbers for D3packages
- replace ”B” with “S” in part
TO-247 or D3 or T/R
number
TO-247
All Products RoHS Compliant
Ultra Fast Recovery Diodes
IF (avg)
Volts
Amps
QRR (nC)Diode
VF (volts) tRR(ns)
O
C Series
Typ
O
O
Typ 25 C Typ 25 C at I =125
Part Number
IF (avg)
F
Package
Style
2x27
DUAL
2x30
2x53
1200
2x60
2x93
2x100
2.0
2.6
2.0
2.5
2.0
2.4
31
25
38
30
47
45
3450
1800
4000
2890
5350
5240
D
DQ
D
DQ
D
DQ
APT2X30D120J
APT2X30DQ120J
APT2X60D120J
APT2X60DQ120J
APT2X100D120J
APT2X100DQ120J
1000
2x28
2x55
2x60
2x95
2x100
1.9
1.9
2.2
1.9
2.1
29
34
30
43
45
2350
3600
2350
4050
3645
D
D
DQ
D
DQ
APT2X30D100J
APT2X60D100J
APT2X60DQ100J
APT2X100D100J
APT2X100DQ100J
2x30
2x30
2x60
2x60
2x100
2x100
2x150
1.8
1.6
1.7
1.6
1.6
1.6
1.25
20
23
27
40
30
34
53
400
700
650
920
980
1450
3800
DQ
D
DQ
D
DQ
D
DL
APT2X30DQ60J
APT2X30D60JISOTOP®
APT2X60DQ60J
APT2X60D60J
APT2X100DQ60J
APT2X100D60J
APT2X150DL60J
1.3
1.3
1.3
1.0
22
30
37
40
360
540
1050
3550
D
D
D
DL
APT2X30D40J
APT2X60D40J
APT2X100D40J
APT2X101DL40J++
1.2
36
650
D
APT2X101D30J
0.80
0.83
1.1
0.89
25
35
39
40
448
490
840
690
Schottky
Schottky
D
Schottky
APT2X31S20J
APT2X61S20J
APT2X100D20J
APT2X101S20J
2x30
2.8
26
2100
DQ
APT30DQ120BCTG
TO-247 [BCT]
2x15
2x15
2x30
2x30
2x60
2x60
2x15
2x15
2x15
2x30
2x30
2x30
2x30
2x30
2x40
2x60
2x60
2x30
2x60
2x30
2x30
2x30
2x30
2x60
2x100
2.5
1.9
1.9
1.9
2.5
1.9
1.6
2.0
1.6
2.0
2.0
1.6
1.6
1.6
2.0
2.0
1.6
1.3
1.3
1.2
1.1
1.1
0.80
0.83
0.89
20
28
29
30
29
35
21
15
20
22
19
23
25
25
22
26
30
22
30
25
21
21
25
35
40
810
1550
2360
2350
2325
3600
520
250
520
480
400
700
700
700
480
640
920
360
540
1300
150
150
448
490
690
DQ
D
D
D
DQ
D
D
DQ
D
DQ
DQ
D
D
D
DQ
DQ
D
D
D
D
D
D
Schottky
Schottky
Schottky
APT15DQ100BCTG
APT15D100BCTG
APT30D100BCTG
APT30D100BHBG
APT60DQ100LCTG
APT60D100LCTG
APT15D60BCTG
APT15DQ60BCTG
APT15D60BCAG
APT30DQ60BHBG
APT30DQ60BCTG
APT30D60BCTG
APT30D60BHBG
APT30D60BCAG
APT40DQ60BCTG
APT60DQ60BCTG
APT60D60LCTG
APT30D40BCTG
APT60D40LCTG
APT30D30BCTG
APT30D20BCTG
APT30D20BCAG
APT30S20BCTG
APT60S20B2CTG
APT100S20LCTG
TO-247 [BCT]
TO-247 [BHB]
TO-247 [BHB]
TO-247 [BCA]
TO-264 [LCT]
TO-264 [LCT]
TO-247
TO-247 [BCT]
TO-247 [BCA]
TO-247 [BHB]
TO-247 [BCT]
TO-247 [BCT]
TO-247 [BHB]
TO-247 [BCA]
TO-247 [BCT]
TO-247 [BCT]
TO-264 [LCT]
TO-247 [BCT]
TO-264 [LCT]
TO-247 [BCT]
TO-247 [KCT]
TO-247 [BCA]
TO-247 [BCT]
T-MAX® [B2CT]
TO-264[LCT]
85
180
DS
DS
APT15DS60BG
APT30DS60BG
TO-247
TO-247
600
2x30
2x60
400
2x100
2x100
300
2x100
2x30
2x60
200
2x100
2x100
1200
1000
600
400
300
200
ISOTOP®[J] SOT-227
Antiparallel
Configuration
(ISOLATED BASE)
Example: 2X30D120J
becomes 2X31D120J
TO
-
22
*Current ratings per leg
++ Parallel Form Only
13
0
TO-220[KCT]
*Common Cathode
Tandem, DS Diodes for PFC Boost Applications
600
15
3.2
13
30
3.2
17
(2, 300V Diodes Connected In Series)
Part Numbers for Parallel
Configuration replace 30, 60,
or 100 with 31, 61, or 101.
Except Schottky
Datasheets available on www.microsemi.com
TO
-
24
7
TO-247[BCA]
*Common Anode
TO-247[BCT]
*Common Cathode
TO
-
24
7
TO-247[BHB]
*Half Bridge
T-M
ax
T-MAX® [B2CT]
*Common Cathode
TO
-
26
4
TO-264[LCT]
*Common Cathode
Part Numbers for D3
packages - replace ”B”
with “S” in part number
All Products RoHS Compliant
High Voltage RF MOSFETs
The ARF family of RF Power MOSFETs are optimized for applications requiring frequencies as high as 150MHz and operating voltages as
high as 400V. Historically, RF Power MOSFETs were limited to applications of 50V or less. This limitation has been removed by combining
Microsemi's high voltage MOSFET technology with RF specific die geometries.
Why Higher Voltage? Higher VDD means higher load impedance. For 150W output from a 50V supply, the load impedance is only 8 ohms.
At 125V, the load impedance is 50 ohms. The higher impedance allows simpler transformers and combiners. Paralleled devices can still operate into reasonable and convenient impedances. The increased operating voltage also lowers the DC current required for any given power
output, increasing efficiency and reducing the size, weight and cost of other system components. High breakdown voltage is a necessity in
high efficiency switchmode amplifiers such as class C-E, which can see peak drain voltages of over 4X the applied VDD.
Part
Number
Pout
(W)
Freq. VDD/BVDSS
(MHz)
(V)
Rthjc
(OC/W)
Package
Style
Class of
Operation
ARF449AG/BG
90
120
150/450
0.76
TO-247
A-E
ARF463AG/BG
100
100
125/500
0.70
TO-247
A-E
ARF463AP1G/BP1G
100
100
125/500
0.70
TO-247
A-E
ARF446G/ARF447G
140
65
250/900
0.55
TO-247
A-E
ARF521
150
150
165/500
0.60
M174
A-E
ARF460AG/BG
150
65
125/500
0.50
TO-247
A-E
ARF461AG/BG
150
65
250/1000
0.50
TO-247
A-E
ARF465AG/BG
150
60
300/1200
0.50
TO-247
A-E
ARF468AG/BG
270
45
165/500
0.38
TO-264
A-E
ARF475FL
300
150
165/500
0.31
T3A
A-E
ARF476FL
300
150
165/500
0.31
T3
A-E
ARF466AG/BG
300
45
200/1000
0.35
TO-264
A-E
ARF466FL
300
45
200/1000
0.13
T3A
A-E
ARF469AG/BG
300
45
165/500
0.35
TO-264
A-E
ARF477FL
400
65
165/500
0.18
T3A
A-E
ARF1500
750
40
125/500
0.12
T1
A-E
ARF1501
750
40
250/1000
0.12
T1
A-E
ARF1510
750
40
700/1000
0.12
T1
D
ARF1511
750
40
380/500
0.12
T1
D
ARF1519
750
25
250/1000
0.13
T2
A-E
High Frequency RF MOSFETs
The VRF family of RF MOSFETs are improved replacements for
industry standard RF transistors. They provide improved ruggedness by increasing the BVDSS over 30% from the industry standard
of 125 volts to 170V minimum. Low cost flangeless packages
are another improvement that show Microsemi's dedication to
optimizing performance, reducing cost and improving reliability.
We will continue to offer a greater number of product offerings
in the new reduced-cost flangeless packages.
Datasheets available on www.microsemi.com
Part
Number
VRF148A
VRF141
VRF151
VRF152
VRF191
VRF150
VRF161
VRF151G
VRF2933
VRF2933FL
VRF3933
VRF3933FL
VRF2944
VRF2944FL
VRF154FL
VRF157FL
VRF164FL
14
M113 / M174 / M177
TO-247
S
D
S
S
G
S
TO-264
T2
T1
T3
Pout Freq.
(W) (MHz)
30
150
150
150
150
150
200
300
300
300
300
300
400
400
600
600
600
175
175
175
175
175
150
175
175
150
150
150
150
150
150
30
30
30
T14
M208
T2B
T4
T3A
Gain
typ
(dB)
16
13
14
14
14
11
25
16
25
25
28
28
25
25
17
21
21
Eff. Typ
(%)
VDD/BVDSS
(V)
50
45
50
50
50
50
50
55
50
50
60
60
50
50
45
45
45
65/170
28/80
65/170
50/140
100/250
65/170
65/170
65/170
65/170
65/170
100/250
100/250
65/170
65/170
65/170
65/170
65/170
Rthjc
(OC/W)
Package
Style
1.52
0.60
0.60
0.60
0.60
0.60
0.50
0.30
0.27
0.27
0.27
0.27
0.22
0.22
0.13
0.13
0.10
All Products RoHS Compliant
M113
M174
M174
M174
M174
M174
M177
M208
M177
T14
M177
T14
M177
T14
T2
T2
T2
Drivers and Driver-RF MOSFET Hybrids
The DRF1200/01/02/03 Hybrids integrate Driver, bypass capacitors and RF MOSFETS into a single package. Integration
maximizes amplifier performance by minimizing transmission line parasitics between the Driver and MOSFET. The DRF1300 or DRF1301
has two independent channels, each containing a Driver and RF MOSFET in a push pull configuration. The DRF1400A and B are half
bridge hybrids with symmetrically orientated leads so that the two can easily be configured into a full bridge converter. All DRF parts
feature a proprietary Anti-ring function to eliminate cross conduction in a Bridge or push-pull topologies. All DRF parts can be externally
selected in either an inverting or non-inverting configuration.
Part Number
Pout
(W)
Freq.
(MHz)
VDD/BVDSS
(V)
Rthjc
(OC/W)
Package
Style
Class of
Operation
DRF1200
400
30
15/1000
0.10
T2B
D-E
DRF1201
600
30
15/1000
0.13
T2B
D-E
DRF1300
1000
30
15/500
0.06
T4
D-E
DRF1301
1000
30
15/1000
0.06
T4
D-E
DRF1400
1000
30
15/500
0.06
T4
D-E
Reference Design Kits
DRF1200/CLASS-E, 13.56 MHz
DRF1200/CLASS-E, 27.12 MHz
The DRF1200/Class-E Single Ended RF Generator is a
reference design providing the designer the ability to
evaluate an 85% efficient 1000W Class-E RF Generator
DRF1300/CLASS-D, 13.56 MHz
The DRF1300/Class-D Push Pull RF Generator is a
reference design providing the designer the ability to
evaluate an 80% efficient 2000W Class-D RF Generator
DRF1400/Class-D, 13.56 MHz
The DRF1400/Class-D Half Bridge RF
Generator is a reference design providing
the designer the ability to evaluate an 85%
efficient 2500W Class- D RF Generator
All kits include: A fully populated board attached to an aluminum heat sink. An extensive application note explaining the theory of
operation with designer's recommendations for evaluation and board layout. All key waveforms are illustrated and described. A complete
parts list with recommended vendor part numbers and the board's Gerber file are provided for an easy transition into an end application.
Datasheets available on www.microsemi.com
15
All Products RoHS Compliant EXCLUDING Reference Design Kits
Power Modules Contents
IGBT Power Modules
POWER MODULE INFORMATION. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17-21
BOOST and BUCK CHOPPER. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22-23
PHASE LEG. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22-23
3 PHASE BRIDGE. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
PHASE LEG for welding application . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
TRIPLE PHASE LEG. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
TRIPLE DUAL COMMON SOURCE. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
INTERLEAVED PFC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
DUAL CHOPPER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
FULL & ASYMMETRICAL BRIDGE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
SINGLE SWITCH . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26.
SINGLE SWITCH + SERIES DIODE. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
DUAL COMMON SOURCE. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Intelligent Power Modules
PHASE LEG. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
MOSFET Power Modules
BOOST and BUCK CHOPPER. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DUAL CHOPPER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
FULL BRIDGE. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
FULL BRIDGE + SERIES AND PARALLEL DIODES. . . . . . . . . . . . . . . . . . . . . . . . . . . .
ASYMMETRICAL BRIDGE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
PHASE LEG. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
PHASE LEG + SERIES AND PARALLEL DIODES . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
PHASE LEG + SERIES DIODES. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TRIPLE PHASE LEG. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TRIPLE DUAL COMMON SOURCE. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DUAL COMMON SOURCE. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
SINGLE SWITCH . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
SINGLE SWITCH + SERIES DIODE. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
SINGLE SWITCH + SERIES AND PARALLEL DIODES. . . . . . . . . . . . . . . . . . . . . . . . . .
INTERLEAVED PFC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
SINGLE AND DUAL LINEAR MOSFET. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
27
27
28
28
28
29
29
29
29
30
30.
30
30
30
30
31
RENEWABLE ENERGY Power Modules
FULL BRIDGE. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
PFC + BYPASS DIODE + PHASE LEG. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
PFC + FULL BRIDGE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
PFC + BYPASS DIODE + FULL BRIDGE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
SECONDARY FAST RECTIFIER + FULL BRIDGE . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
BOOST BUCK . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3- LEVEL NPC INVERTER. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T-TYPE 3-LEVEL INVERTER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
31.
31
31.
31
31.
32
32
32
Microsemi combines a formidable array of technologies in semiconductors, packaging and automated manufacturing to produce a wide range of high quality modules
optimized for:
• Reliability
• Efficiency and electrical performance
• Low cost
• Space savings
• Reduced assembly time
The readily available standard module product line spans a wide selection of circuit
topologies, semiconductors including Silicon Carbide, voltage and current ratings
and packages. If you need even more flexibility or intellectual property protection,
Microsemi can often customize a standard module with low set up cost and with
a short lead time. Unique requirements can be met with Application Specific Power
Modules (ASPM®).
SiC Diode Power Modules
DUAL DIODE. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
FULL BRIDGE. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
Microsemi serves a broad spectrum of industrial applications for Welding, Solar,
Induction Heating, Medical, UPS, Motor Control and SMPS markets as well as
HI-REL applications for Semicap, Defense and Aerospace markets. A wide selection
of construction materials enables Microsemi to manufacture with short lead times
modules that feature:
IGBT + SiC Diode Power Modules
BOOST CHOPPER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
DUAL CHOPPER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
MOSFET + SiC Diode Power Modules
SINGLE SWITCH + SERIES FRED AND SiC PARALLEL DIODES. . . . . . . . . . . . . . . . . .
CHOPPER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
PHASE LEG + SERIES FRED AND SiC PARALLEL DIODES. . . . . . . . . . . . . . . . . . . . . .
FULL BRIDGE + SERIES FRED AND SiC PARALLEL DIODES . . . . . . . . . . . . . . . . . . . .
TRIPLE PHASE LEG. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
34
34
34
34
34
SiC MOSFET Power Modules
PHASE LEG. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T-TYPE 3-LEVEL INVERTER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3-LEVEL NPC INVERTER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
BOOST CHOPPER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
35
35
35
35
Diode Power Modules
SINGLE DIODE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
SINGLE DIODE - NON ISOLATED PACKAGE. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3-PHASE BRIDGE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3-PHASE BRIDGE + THYRISTOR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
FULL BRIDGE. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
THYRISTOR & DIODE DOUBLER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
COMMON CATHODE - COMMON ANODE - DOUBLER. . . . . . . . . . . . . . . . . . . . . . .
36
36
36.
36
37
37
38
• Extended temperature range: -60°C to +200°C
• High reliability
• Reduced size and weight
• Hi-Rel testing and screening options
Microsemi's experience and expertise in power electronic conversion brings the
most effective technical support for your new development.
• Isolated gate driver
• Snubbers
• Mix & match semiconductors
• Short circuit protection
• Temperature & current sensing
• Parameter binning
Package Outlines Drawings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40-43
16
Standard Electrical Configurations
Microsemi offers a wide range of standard electrical configurations housed in a variety of packages to match your specific need for
high power density and performance. Various semiconductor types are offered in the same topology.
Electrical Topology
IGBT
600V to 1700V
MOSFET
75V to 1200V
Asymmetrical Bridge
X
X
Boost Buck
X
X
Boost & Buck Chopper
X
X
Diode
30V to 1700V
Common Anode
X
Common Cathode
X
Dual Boost & Buck Chopper
X
X
Dual Common Source
X
X
Mix Si-SiC
600 & 1200V
Full SiC
600 & 1200V
X
X
X
Dual Diode
X
Full Bridge
X
X
Full Bridge + PFC
X
X
X
Full Bridge + Secondary Fast Rectifier Bridge
X
X
X
X
X
Full Bridge + Series and Parallel Diodes
Interleaved PFC
X
X
X
X
Linear single and Dual switch
X
Phase Leg
X
Phase Leg Intelligent
X
X
X
X
Phase Leg + PFC
X
X
Phase Leg + Series and Parallel Diodes
X
X
Single Switch
X
X
Single Switch + Series and Parallel Diodes
X
X
Single Switch + Series Diodes
X
3-Level NPC Inverter
X
3-Level T-Type Inverter
X
3-Phase Bridge
X
Triple Dual Common Source
X
X
Triple Phase Leg
X
X
X
X
X
X
X
NPT
MOSFET
Trench3
FREDFET
Trench4
CoolMOS
Trench4 Fast
17
X
Schottky
IGBT Diode
FRED
MOSFETMOSFET
Std Rectifier
Diode
Thyristor
Packaging
Improved Low Profile Packages
SP1 (12mm)
SP3 (12mm)
SP4 (17mm)
SP6 (17mm)
SP6-P (12mm)
SP1
SP4
SP3
SP3F
SP6
SP6-P
Industry Standard Packages
SOT-227 (Isotop®)
SP2 (17mm)
34mm & 62mm Types
D1 (34 mm Wide)
D3 (62 mm Wide)
D4 (62 mm Wide)
SD1
SOT-227
SM1
SD2
Mini-Mod
Surface Mount
SP2
SM2
Mini-Mod
TO-249
D1
SM2-1
SM3
D4
D3
SM3-1
9-pin TO-249
SM4
Twin Tower
SM5
VJ
SF1
Half Pack
Package Advantages
SP6 - SP
APTmodule
MODULE
12 mm
ISOTOP ®
30 mm
17 mm
SP1 package:
SP3F package:
SP6 package:
SP6-P package:
-Replaces 2 SOT-227 parts
-Improved assembly time and cost
-Height compatible with SOT-227
-Copper base plate
-Replaces up to 4 SOT-227 parts
-Reduced assembly time and cost
-Height compatible with SOT-227
-Copper base plate
Offers the same footprint and the same
pinout location as the popular 62mm
package but with lower height, leading to:
- Reduced stray inductance
- Reduced parasitic resistance
- Higher efficiency at high frequency
-Replaces up to 6 SOT-227 parts
-Height compatible with SOT-227
-Low inductance solder pins
-High current capability
18
Custom Power Modules
Microsemi PMP has created the Application Specific Power Module (ASPM) concept and has been offering customized power modules since 1983. Microsemi PMP offers a
complete engineered solution with mix and match capabilities in term of package, configuration, performance and cost.
Package
Standard or Custom
Ensure environmental protection and
mechanical robustness
Internal Printed Circuit Board
Not available in all modules.
Used to route gate signals tracks to small
signal terminals
Used to mount gate circuit and protection in
case of intelligent power module
Power Semiconductor Die
IGBT, MOSFET, Diode, SiC, Thyristor,
Switching devices soldered to the
substrates and connected by ultrasonic
Al wire bonds
Terminals
Screw on or Solder pins
Provides the user with power and signal
connections with minimum parasitic
resistance and inductance
Base Plate
Improve the heat transfer to the heat sink
Copper for good thermal transfer
AlSiC, CuW, CuMoCu for improved
reliability
Substrates
Al2O3, AlN, Si3N4
Provide isolation and good heat
transfer to the base plate
3 levels of customization are proposed offering different cost and low volume entry:
Change Options:
Die
Substrate
Base plate
Plastic lid
Terminals
NRE level
Elect./thermal performance
Die P/N
Material
Material
-
-
None to low
Elect./thermal performance
+ electrical configuration
Die P/N
Material & Layout
Material
-
-
Low to medium
Elect./thermal performance
+ electrical configuration
+ module housing
Die P/N
Material & Layout
Material & Shape
Material & Shape
Shape
Medium to high
Microsemi PMP power modules are made of different sub-elements. Most of them are standard and can be re-used to build infinite solutions for the end user.
Microsemi PMP offers optimum development cost and cycle time thanks to long term experience and wide range of available technologies.
Power Modules Features
Customer Benefits
High Power Density
Size and cost reduction
Isolated and highly thermally conductive substrate
Excellent thermal management
Internal wiring
Reduced external hardware
Minimum parasitics
Improved performance
Minimum output terminals
Reduced assembly time
Mix & match components
Optimizes losses
Full engineered solutions
Easy upgrade/less parts counts/short time to market/IP protection
FLEXIBILITY
PACKAGING CAPABILITY
Great level of integration
Mix of Silicon within the same package
No quantity limitation
Standard and custom packages
Standard and custom terminals
Various substrate technologies
TECHNOLOGY
RELIABILITY
Application oriented
Coefficient of thermal expansion matching
APPLICATIONS
Solar - Welding - Plasma Cutting - Semicap - MRI & X-Ray - EV/HEV - Induction Heating - UPS - Motor control - Data Communication
19
MOQ
5 to 10
pieces
Rugged Custom Power Modules
Various solutions are proposed offering different cost and low volume of entry:
Microsemi PMP has acquired a great experience and
know-how in module customization to address rugged
and wide temperature range application and offers
solution to meet with next generation integrated
power systems expectation in terms of:
• Improved Reliability
• Wider Operating Temperatures
• Higher Power
• Higher Efficiency
• Lower Weight and Size
• Lower Cost
Applications
• Avionics actuation system
• Avionics lift and pump
• Military ground vehicle
• power supply and motor control
• Navy ship auxiliary power supply
• Down hole drilling
Test Capabilities
• X-Ray inspection
• Dielectric test (up to 6KV)
• Electrical testing at specified temperature
• Burn-in
• Acoustic imaging
Reliability Testing Capabilities
• Power cycling
• Hermetic sealing
• Moisture
• Salt atmosphere
• HTGB
• Temperature shock
• HAST
• H3TRB
• Altitude
• Mechanical shock, vibration
Expertise Capabilities
• Cross-sectioning
• Structural analysis
All tests can be conducted upon demand by sampling or
at 100%. Tests performed in house or with external lab.
Industrial
Application
Extended
Temperature
Application
No NRE
Low Volume Entry
Standard Module
X
Modified Standard
X
X
Custom Module
X
X
Solder
DBC
Substrate Joint
Harsh
Environment
Application
Low NRE
Low Volume Entry
X
Medium to High NRE
Low Volume Entry
Dice
Solder
Joint
Module performance and
reliability depends on the choice
of the assembly materials
Base
Plate
CTE
Thermal
(ppm/K) conductivity
(W/m.K)
Silicon Die (120 mm2)
4
136
17/7
390/25
Cu/Al2O3
7/7
170/25
AlSiC/Al2O3
Cu/AlN
17/5
390/170
AlSiC/AlN
7/5
170/170
7/3
170/60
AlSiC/Si3N4
Rthjc
(K/W)
Material
CTE
Thermal
(ppm/K) conductivity
(W/m.K)
CuW
6.5
190
Base plate AlSiC
7
170
Cu
17
390
Al2O3
7
25
Substrate AlN
5
170
Si3N4
3
60
Si
4
136
Die
SiC
2.6
270
Density
(g/cc)
Our Core Competencies
• Extensive experience of rugged solutions for
harsh environments
• Wide range of Silicon technologies
• Wafer fab capabilities
• Mix of assembly technologies
• Hermetic and robust plastic packages
• Custom test & burn-in solutions
• ISO9001 certified
• End-of-life (obsolescence) management
• Thermal management
• Material expertise
• Product life management associated to risks
analysis
20
0.35
0.38
0.28
0.31
0.31
17
2.9
8.9
-
More closely matched materials TCE’s increase the
module life time because it will result in much less
stress at the interface of the materials and inside the
materials.
The higher the thermal conductivity, the lower is the
junction to case thermal resistance and the lower
will be the delta of junction temperature of the
device during operation such that the effect of power
cycling on the dice will be minimized.
Another important feature is the material density
particularly for the baseplate. Taking copper as the
reference, AlSiC has a density of 1/3 while CuW
has twice the density. Therefore AlSiC will provide
substantial weight reduction at the same time as
reliability increase.
Power Module Part Numbering System
IGBT Modules
MOSFET Modules
APT GL 475 A 120 T D3
III IV
G
I
II
V VI VII VIII
I
Trade Mark
II
IGBT Type:
GF = NPT or NPT FAST
GFQ = NPT ULTRA FAST
GL = TRENCH 4
GT = TRENCH 3
GV = Mix NPT/TRENCH
CV = Mix TRENCH/CoolMOS
III
Current:
Ic @ Tc=80°C
IV
Topology:
A = Phase Leg
BB = Boost Buck
DA = Boost Chopper
DDA = Double Boost Chopper
DH = Asymmetrical Bridge
DSK = Double Buck Chopper
DU = Dual Common Source
H = Full Bridge
HR = T-Type 3-Level
SDA = Double Boost + Bypass Diode
SK = Buck Chopper
TA = Triple Phase Leg
TDU = Triple Dual Common Source
TL = Three Level
U = Single Switch
VDA = Interleaved PFC
X = Three Phase Bridge
V
Blocking Voltage:
60 = 600V
120 = 1200V
170 = 1700V
VI
Option:
A = AIN Substrate
C = SiC Diode
D = Series Diode
T = Temperature Sensor
W = Clamping Parallel Diode
VII
Package:
1 = SP1
2 = SP2
3 = SP3
P = SP6-P
D1 = D1 (34mm)
D3 = D3 (62mm)
D4 = D4 (62mm)
VIII
G = RoHS Compliant
APT
I
C
II
Diode Modules
60 DA M24 T 1
III
IV
V
VI VII VIII
I
Trade Mark
II
MOSFET Type:
MC = MOSFET SiC
M = MOSFET
C = CoolMOS
III
Blocking Voltage:
08 = 75V
10 = 100V
20 = 200V
50 = 500V
60 = 600V
IV
G
80 = 800V
90 = 900V
100 = 100V
120 = 120V
Topology:
A = Phase Leg
BB = Boost Buck
DA = Boost Chopper
DDA = Double Boost Chopper
DH = Asymmetrical Bridge
DSK = Double Buck Chopper
DU = Dual Common Source
H = Full Bridge
HR = T-Type 3-Level
SDA = Double Boost + Bypass Diode
SK = Buck Chopper
TA = Triple Phase Leg
TDU = Triple Dual Common Source
TL = Three Level NPC
U = Single Switch
VDA = Interleaved PFC
V
RDSON @ Tc=25°C
240 = 2400mΩ
24 = 240mΩ
M24 = 24mΩ
VI
Option:
A = AlN Substrate
C = SiC Diode
D = Series Diode
F = FREDFET
S = Series and Parallel Diodes
T = Temperature Sensor
U = Ultrafast FREDFET
VII
Package:
1 = SP1
2 = SP2
3 = SP3
P = SP6-P
VIII
G = RoHS Compliant
APT DR
90
X 160 1
III IV
G
I
II
V VI VII
I
Trade Mark
II
Diode Type:
DF = FRED
DR = Standard Rectifier
DC = SiC
DSK = Schottky
III
Current:
IF @ Tc=80°C
IV
Topology:
AA = Dual Common Anode
BB = Boost Buck
AK = Dual Series
KK = Dual Common Cathode
H = Single Phase Bridge
U = Single Switch
X = Three Phase Bridge
V
Blocking Voltage:
20 = 200V
40 = 400V
60 = 600V
100 = 1000V
120 = 1200V
160 = 1600V
170 = 1700V
VI
Package:
1 = SP1
3 = SP3
VII
G = RoHS Compliant
Optional Materials
Optional materials are available upon demand on most of the
A
listed standard power modules. Options are indicated with a
M
letter in the suffix of the module part number. Temperature
T
C
Sensor Option is indicated in the catalog with "YES" or
N
"option" when available on standard part or on demand.
E
21
AIN Substrate for higher thermal conductivity
AlSiC Base plate material for improved temperature cycling capabilities
Temperature Sensor (NTC or PTC) for Case Temperature information
SiC Diode for higher efficiency
Si3N4 Substrate
Press fit terminals (for SP3 package only)
IGBT Power Modules
CHOPPER AND PHASE LEG
VCES
(V)
IGBT
Type
NPT
NPT FAST
600
TRENCH3
650
TRENCH 4 FAST
NPT FAST
1200
TRENCH 3
IC (A)
VCE (on)(V)
Package
TC=80º C at rated Ic
250
330
30
30
50
60
90
100
150
165
180
350
75
100
100
150
150
200
200
300
300
300
400
450
600
100
600
15
50
75
100
100
100
100
150
150
200
300
300
35
35
50
50
50
50
75
75
2.1
2.1
2.1
2.1
2.1
2.1
2.1
2.1
2.1
2.1
2.1
2.1
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.85
1.85
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
1.7
1.7
1.7
1.7
1.7
1.7
1.7
1.7
D3
D3
SOT227
SP1
SOT227
SOT227
SP1
SOT227
SP3
D1
SP4
SP6
SP1
SP1
SP2
SP1
SP3
SP2
SP3
SP4
SP6
D3
D3
SP6
SP6
SP1
SP6
SP1
SP1
SP1
SP1
SP2
SP3
SP4
SP3
SP4
D3
SP6
D3
SP1
SOT227
SOT227
SP1
SP2
SP4
SOT227
SP1
SOT-227
NTC
option
option
YES
YES
YES
YES
option
YES
YES
YES
YES
YES
YES
option
option
option
option
option
YES
YES
YES
YES
YES
YES
YES
YES
YES
YES
option
option
option
YES
YES
YES
YES
…DA... or ...U2
APTGF250DA60D3G
APTGF330DA60D3G
APT30GF60JU2
N/A
APT50GF60JU2
APT60GF60JU2
APTGF90DA60T1G
APT100GF60JU2
N/A
APTGF165DA60D1G
APTGF180DA60TG
APTGF350DA60G
APTGT75DA60T1G
APTGT100DA60T1G
N/A
APTGT150DA60T1G
N/A
N/A
APTGT200DA60T3AG
N/A
APTGT300DA60G
APTGT300DA60D3G
APTGT400DA60D3G
APTGT450DA60G
APTGT600DA60G
N/A
N/A
N/A
APTGF50DA120T1G
APTGF75DA120T1G
APTGF100DA120T1G
N/A
N/A
APTGF100DA120TG
N/A
APTGF150DA120TG
N/A
APTGF300DA120G
APTGF300DA120D3G
N/A
APT35GT120JU2
APT50GT120JU2
N/A
N/A
APTGT50DA120TG
APT75GT120JU2
N/A
...SK... or ...U3
APTGF250SK60D3G
APTGF330SK60D3G
APT30GF60JU3
N/A
APT50GF60JU3
APT60GF60JU3
APTGF90SK60T1G
APT100GF60JU3
N/A
APTGF165SK60D1G
APTGF180SK60TG
APTGF350SK60G
APTGT75SK60T1G
APTGT100SK60T1G
N/A
APTGT150SK60T1G
N/A
N/A
APTGT200SK60T3AG
N/A
APTGT300SK60G
APTGT300SK60D3G
APTGT400SK60D3G
APTGT450SK60G
APTGT600SK60G
N/A
N/A
N/A
APTGF50SK120T1G
N/A
N/A
N/A
N/A
APTGF100SK120TG
N/A
APTGF150SK120TG
N/A
APTGF300SK120G
APTGF300SK120D3G
N/A
APT35GT120JU3
APT50GT120JU3
N/A
N/A
APTGT50SK120TG
APT75GT120JU3
N/A
…A...
APTGF250A60D3G
APTGF330A60D3G
N/A
APTGF30A60T1G
N/A
N/A
APTGF90A60T1G
N/A
APTGF150A60T3AG
APTGF165A60D1G
APTGF180A60TG
APTGF350A60G
APTGT75A60T1G
APTGT100A60T1G
APTGT100A602G
APTGT150A60T1G
APTGT150A60T3AG
APTGT200A602G
APTGT200A60T3AG
APTGT300A60TG
APTGT300A60G
APTGT300A60D3G
APTGT400A60D3G
APTGT450A60G
APTGT600A60G
APTGLQ100A65T1G
APTGLQ600A65T6G
APTGF15A120T1G
APTGF50A120T1G
N/A
N/A
APTGF100A1202G
APTGF100A120T3AG
APTGF100A120TG
APTGF150A120T3AG
APTGF150A120TG
APTGF200A120D3G
APTGF300A120G
APTGF300A120D3G
APTGT35A120T1G
N/A
N/A
APTGT50A120T1G
APTGT50A1202G
N/A
N/A
APTGT75A120T1G
SP1
SP2
SP3
SP4
SP6
continued next page
D1
D3
22
All Power Modules RoHS Compliant
IGBT Power Modules
CHOPPER AND PHASE LEG CONT.
VCES
(V)
IGBT
Type
TRENCH 3
1200
TRENCH 4
TRENCH 4 FAST
1700
TRENCH 3
IC (A)
VCE (on)(V)
Package
TC=80º C at rated Ic
75
75
100
100
100
100
100
100
150
150
150
150
200
200
300
300
400
400
40
90
180
180
325
475
700
100
400
30
50
50
75
75
100
150
200
225
300
300
1.7
1.7
1.7
1.7
1.7
1.7
1.7
1.7
1.7
1.7
1.7
1.7
1.7
1.7
1.7
1.7
1.7
1.7
1.85
1.85
1.85
1.85
1.85
1.85
1.85
2.05
2.05
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
SP2
SP4
SP1
SOT227
D1
SP2
SP3
SP4
SP6
D1
SP3
SP4
SP6
D3
SP6
D3
SP6
D3
SOT227
SP1
SP2
SP3
D3
D3
D3
SP3
SP6
SP1
SP1
SP4
SP1
D1
SP4
SP6
D3
SP6
SP6
D3
SOT-227
NTC
…DA... or ...U2
N/A
APTGT75DA120TG
APTGT100DA120T1G
APT100GT120JU2
N/A
N/A
N/A
N/A
APTGT150DA120G
APTGT150DA120D1G
N/A
N/A
APTGT200DA120G
APTGT200DA120D3G
APTGT300DA120G
APTGT300DA120D3G
APTGT400DA120G
N/A
APT40GL120JU2
APTGL90DA120T1G
N/A
N/A
APTGL325DA120D3G
APTGL475DA120D3G
APTGL700DA120D3G
N/A
N/A
APTGT30DA170T1G
APTGT50DA170T1G
APTGT50DA170TG
APTGT75DA170T1G
APTGT75DA170D1G
APTGT100DA170TG
APTGT150DA170G
APTGT200DA170D3G
APTGT225DA170G
APTGT300DA170G
APTGT300DA170D3G
YES
YES
YES
YES
option
YES
YES
option
option
option
option
option
option
YES
YES
option
option
option
YES
YES
YES
YES
YES
YES
YES
option
option
option
option
option
...SK... or ...U3
N/A
APTGT75SK120TG
N/A
APT100GT120JU3
N/A
N/A
N/A
N/A
APTGT150SK120G
APTGT150SK120D1G
N/A
N/A
APTGT200SK120G
APTGT200SK120D3G
APTGT300SK120G
APTGT300SK120D3G
APTGT400SK120G
N/A
APT40GL120JU3
APTGL90SK120T1G
N/A
N/A
APTGL325SK120D3G
APTGL475SK120D3G
APTGL700SK120D3G
N/A
N/A
APTGT30SK170T1G
APTGT50SK170T1G
APTGT50SK170TG
N/A
APTGT75SK170D1G
APTGT100SK170TG
APTGT150SK170G
APTGT200SK170D3G
APTGT225SK170G
APTGT300SK170G
APTGT300SK170D3G
…A...
APTGT75A1202G
N/A
N/A
N/A
APTGT100A120D1G
APTGT100A1202G
APTGT100A120T3AG
APTGT100A120TG
APTGT150A120G
APTGT150A120D1G
APTGT150A120T3AG
APTGT150A120TG
APTGT200A120G
APTGT200A120D3G
APTGT300A120G
APTGT300A120D3G
APTGT400A120G
APTGT400A120D3G
N/A
APTGL90A120T1G
APTGL180A1202G
APTGL180A120T3AG
APTGL325A120D3G
APTGL475A120D3G
N/A
APTGLQ100A120T3AG
APTGLQ400A120T6G
APTGT30A170T1G
APTGT50A170T1G
APTGT50A170TG
N/A
APTGT75A170D1G
APTGT100A170TG
APTGT150A170G
APTGT200A170D3G
APTGT225A170G
APTGT300A170G
APTGT300A170D3G
SP1
SP3
SP4
SP6
3 PHASE BRIDGE
VCES
(V)
IGBT
Type
NPT FAST
600
TRENCH 3
NPT FAST
1200
TRENCH 3
TRENCH 4
IC (A)
TC=80º C
VCE (on)(V)
at rated Ic
Package
NTC
Part Number
30
50
30
50
75
15
25
25
35
40
2.1
2.1
1.5
1.5
1.5
3.2
3.2
1.7
1.7
1.85
SP3
SP3
SP3
SP3
SP3
SP3
SP3
SP3
SP3
SP3
YES
YES
YES
YES
YES
YES
YES
YES
YES
YES
APTGF30X60T3G
APTGF50X60T3G
APTGT30X60T3G
APTGT50X60T3G
APTGT75X60T3G
APTGF15X120T3G
APTGF25X120T3G
APTGT25X120T3G
APTGT35X120T3G
APTGL40X120T3G
D1
D3
23
All Power Modules RoHS Compliant
IGBT Power Modules
PHASE LEG FOR WELDING APPLICATION
VCES
(V)
IGBT
Type
IC (A)
TC=80º C
VCE (on)(V)
at rated Ic
Package
NTC
Part Number
1200
NPT FAST
100
150
3.2
3.2
SP3
SP3
YES
YES
APTGF100A120T3WG
APTGF150A120T3WG
SP3
TRIPLE PHASE LEG
VCES
(V)
600
IGBT
Type
IC (A)
TC=80º C
VCE (on)(V)
at rated Ic
Package
NTC
Part Number
NPT FAST
90
50
75
150
50
75
100
120
2.1
1.5
1.5
1.5
3.2
1.7
1.7
1.85
SP6-P
SP6-P
SP6-P
SP6-P
SP6-P
SP6-P
SP6-P
SP6-P
option
option
option
option
option
option
YES
YES
APTGF90TA60PG
APTGT50TA60PG
APTGT75TA60PG
APTGT150TA60PG
APTGF50TA120PG
APTGT75TA120PG
APTGT100TA120TPG
APTGL120TA120TPG
IC (A)
TC=80º C
VCE (on)(V)
at rated Ic
Package
NTC
Part Number
50
75
100
150
50
75
120
50
1.5
1.5
1.5
1.5
3.2
1.7
1.85
2.0
SP6-P
SP6-P
SP6-P
SP6-P
SP6-P
SP6-P
SP6-P
SP6-P
option
option
option
option
option
option
YES
option
APTGT50TDU60PG
APTGT75TDU60PG
APTGT100TDU60PG
APTGT150TDU60PG
APTGF50TDU120PG
APTGT75TDU120PG
APTGL120TDU120TPG
APTGT50TDU170PG
TRENCH 3
NPT FAST
1200
TRENCH 3
TRENCH 4
SP4
TRIPLE DUAL COMMON SOURCE
VCES
(V)
IGBT
Type
600
TRENCH 3
NPT FAST
TRENCH 3
TRENCH 4
TRENCH 3
1200
1700
SP6-P
INTERLEAVED PFC
VCES
(V)
IGBT
Type
IC (A)
TC=80º C
VCE (on)(V)
at rated Ic
Package
NTC
Part Number
600
1200
NPT FAST
50
50
2.1
3.2
SP3
SP3
YES
YES
APTGF50VDA60T3G
APTGF50VDA120T3G
DUAL CHOPPER
VCES
(V)
600
IGBT
Type
IC (A)
TC=80º C
VCE (on)(V)
at rated Ic
Package
NTC
NPT FAST
50
50
75
25
50
75
50
60
90
2.1
1.5
1.5
3.2
3.2
3.2
1.7
1.85
1.85
SP3
SP3
SP3
SP3
SP3
SP4
SP3
SP3
SP3
YES
YES
YES
YES
YES
YES
YES
YES
YES
TRENCH 3
NPT FAST
1200
TRENCH 3
TRENCH 4
24
...DDA...
APTGF50DDA60T3G
APTGT50DDA60T3G
APTGT75DDA60T3G
APTGF25DDA120T3G
APTGF50DDA120T3G
APTGF75DDA120TG
APTGT50DDA120T3G
APTGL60DDA120T3G
APTGL90DDA120T3G
...DSK...
APTGF50DSK60T3G
APTGT50DSK60T3G
APTGT75DSK60T3G
APTGF25DSK120T3G
APTGF50DSK120T3G
APTGF75DSK120TG
APTGT50DSK120T3G
APTGL60DSK120T3G
APTGL90DSK120T3G
All Power Modules RoHS Compliant
IGBT Power Modules
FULL & ASYMMETRICAL BRIDGE
VCES
(V)
IGBT
Type
NPT FAST
600
TRENCH 3
650
TRENCH 4
FAST
NPT
ULTRA FAST
NPT FAST
1200
TRENCH 3
TRENCH 4
TRENCH 4
FAST
1700
TRENCH 3
IC (A)
TC=80º C
VCE (on)(V)
at rated Ic
Package
NTC
30
30
50
50
90
180
20
30
50
50
50
75
75
75
100
100
150
200
300
75
300
2.1
2.1
2.1
2.1
2.1
2.1
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.85
1.85
SP1
SP3
SP1
SP3
SP3
SP6
SP1
SP1
SP1
SP2
SP3
SP1
SP2
SP3
SP4
SP3
SP4
SP6
SP6
SP1
SP6
YES
YES
YES
YES
YES
YES
YES
YES
YES
YES
YES
YES
YES
YES
YES
YES
YES
option
...H...
APTGF30H60T1G
APTGF30H60T3G
APTGF50H60T1G
APTGF50H60T3G
APTGF90H60T3G
APTGF180H60G
APTGT20H60T1G
APTGT30H60T1G
APTGT50H60T1G
APTGT50H60T2G
APTGT50H60T3G
APTGT75H60T1G
APTGT75H60T2G
APTGT75H60T3G
APTGT100H60TG
APTGT100H60T3G
APTGT150H60TG
APTGT200H60G
APTGT300H60G
APTGLQ75H65T1G
APTGLQ300H65G
...DH...
N/A
N/A
APTGF50DH60T1G
N/A
APTGF90DH60T3G
APTGF180DH60G
N/A
N/A
APTGT50DH60T1G
N/A
N/A
APTGT75DH60T1G
N/A
N/A
APTGT100DH60TG
APTGT100DH60T3G
APTGT150DH60TG
APTGT200DH60G
APTGT300DH60G
N/A
N/A
25
2.1
SP2
YES
APTGFQ25H120T2G
N/A
15
25
25
25
50
50
75
150
35
50
50
50
75
75
100
100
150
200
40
60
90
40
75
200
30
50
100
150
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
1.7
1.7
1.7
1.7
1.7
1.7
1.7
1.7
1.7
1.7
1.85
1.85
1.85
2.05
2.05
2.05
2.0
2.0
2.0
2.0
SP1
SP1
SP2
SP3
SP3
SP4
SP4
SP6
SP3
SP3
SP4
SP3
SP3
SP4
SP4
SP6
SP6
SP6
SP1
SP3
SP3
SP1
SP3
SP6
SP3
SP4
SP6
SP6
YES
YES
YES
YES
YES
YES
YES
YES
YES
YES
YES
YES
YES
YES
YES
YES
YES
YES
YES
option
YES
YES
-
APTGF15H120T1G
APTGF25H120T1G
APTGF25H120T2G
APTGF25H120T3G
N/A
APTGF50H120TG
APTGF75H120TG
APTGF150H120G
APTGT35H120T3G
N/A
APTGT50H120TG
APTGT50H120T3G
N/A
APTGT75H120TG
N/A
APTGT100H120G
APTGT150H120G
APTGT200H120G
APTGL40H120T1G
APTGL60H120T3G
APTGL90H120T3G
APTGLQ40H120T1G
APTGLQ75H120T3G
APTGLQ200H120G
APTGT30H170T3G
APTGT50H170TG
APTGT100H170G
APTGT150H170G
N/A
N/A
N/A
N/A
APTGF50DH120T3G
APTGF50DH120TG
APTGF75DH120TG
APTGF150DH120G
N/A
APTGT50DH120T3G
APTGT50DH120TG
N/A
APTGT75DH120T3G
APTGT75DH120TG
APTGT100DH120TG
N/A
APTGT150DH120G
APTGT200DH120G
N/A
APTGL60DH120T3G
APTGL90DH120T3G
N/A
N/A
N/A
N/A
APTGT50DH170TG
APTGT100DH170G
APTGT150DH170G
25
SP1
SP2
SP3
SP4
SP6 Full Bridge
All Power Modules RoHS Compliant
IGBT Power Modules
SINGLE SWITCH
VCES
(V)
600
IGBT
Type
NPT FAST
TRENCH 3
NPT FAST
1200
TRENCH 3
TRENCH 4
1700
TRENCH 3
IC (A)
TC=80º C
VCE (on)(V)
at rated Ic
Package
NTC
Part Number
360
500
660
750
530
400
600
475
700
400
600
2.1
2.1
2.1
1.5
3.2
1.7
1.7
1.85
1.85
2.0
2.0
D4
D4
D4
D4
D4
D4
D4
D4
D4
D4
D4
-
APTGF360U60D4G
APTGF500U60D4G
APTGF660U60D4G
APTGT750U60D4G
APTGF530U120D4G
APTGT400U120D4G
APTGT600U120D4G
APTGL475U120D4G
APTGL700U120D4G
APTGT400U170D4G
APTGT600U170D4G
IC (A)
TC=80º C
VCE (on)(V)
at rated Ic
Package
NTC
Part Number
200
300
475
3.2
3.2
1.85
SP6
SP6
SP6
-
APTGF200U120DG
APTGF300U120DG
APTGL475U120DAG
D4
SINGLE SWITCH + SERIES DIODE
VCES
(V)
1200
IGBT
Type
NPT FAST
TRENCH 4
DUAL COMMON SOURCE
VCES
(V)
IGBT
Type
NPT FAST
600
TRENCH 3
NPT FAST
1200
TRENCH 3
1700
TRENCH 3
SP4
IC (A)
TC=80º C
VCE (on)(V)
at rated Ic
Package
NTC
Part Number
90
180
350
100
200
300
600
100
150
300
50
75
100
150
150
200
300
400
100
225
300
2.1
2.1
2.1
1.5
1.5
1.4
1.4
3.2
3.2
3.2
1.7
1.7
1.7
1.7
1.7
1.7
1.7
1.7
2.0
2.0
2.0
SP4
SP4
SP6
SP4
SP4
SP6
SP6
SP4
SP4
SP6
SP4
SP4
SP4
SP6
SP4
SP6
SP6
SP6
SP4
SP6
SP6
YES
YES
YES
YES
YES
YES
YES
YES
YES
YES
YES
-
APTGF90DU60TG
APTGF180DU60TG
APTGF350DU60G
APTGT100DU60TG
APTGT200DU60TG
APTGT300DU60G
APTGT600DU60G
APTGF100DU120TG
APTGF150DU120TG
APTGF300DU120G
APTGT50DU120TG
APTGT75DU120TG
APTGT100DU120TG
APTGT150DU120G
APTGT150DU120TG
APTGT200DU120G
APTGT300DU120G
APTGT400DU120G
APTGT100DU170TG
APTGT225DU170G
APTGT300DU170G
SP6
Intelligent Power Modules
Phase leg
VCES
(V)
600
1200
IGBT
Type
IC (A)
TC=80º C
VCE (on)(V)
at rated Ic
Package
NTC
Part Number
NPT FAST
TRENCH 3
NPT FAST
TRENCH 3
TRENCH 4
350
400
300
300
325
2.1
1.5
3.2
1.7
1.8
LP8
LP8
LP8
LP8
LP8
-
APTLGF350A608G
APTLGT400A608G
APTLGF300A1208G
APTLGT300A1208G
APTLGL325A1208G
26
LP8
MOSFET Power Modules
CHOPPER
VDSS
(V)
100
MOSFET
Type
MOS 5
MOS 5
200
MOS 7
MOS 5
500
MOS 7
600
CoolMOS
900
CoolMOS
MOS 8
1000
1200
MOS 7
MOS 8
MOS8
RDS (ON)
(mΩ)
ID (A)
TC=80º C
Package
11
4.5
2.25
22
8
5
4
100
100
75
19
17
65
70
24
120
60
180
90
330
300
100
207
370
71
147
250
300
30
30
32
125
140
43
40
70
25
44
33
59
17
23
SOT-227
SP4
SP6
SOT-227
SP4
SP6
SP6
SOT-227
SOT-227
SOT-227
SP6
SP6
SOT-227
SOT-227
SP1
SOT-227
SP1
SP4
SP6
SP1
SP1
NTC
SOT-227
YES
YES
option
option
option
option
YES
YES
YES
option
YES
YES
DA...or...U2
SK...or...U3
APT10M11JVRU2
APTM10DAM05TG
APTM10DAM02G
APT20M22JVRU2
APTM20DAM08TG
APTM20DAM05G
APTM20DAM04G
APT5010JVRU2
APT5010JLLU2
APT50M75JLLU2
APTM50DAM19G
APTM50DAM17G
APT58M50JU2
APT40N60JCU2
APTC60DAM24T1G
APT33N90JCU2
APTC90DAM60T1G
APTM100DA18TG
APTM100DAM90G
APTM100DA33T1G
APTM120DA30T1G
APT10M11JVRU3
APTM10SKM05TG
APTM10SKM02G
APT20M22JVRU3
APTM20SKM08TG
APTM20SKM05G
APTM20SKM04G
APT5010JVRU3
APT5010JLLU3
APT50M75JLLU3
APTM50SKM19G
APTM50SKM17G
APT58M50JU3
APT40N60JCU3
APTC60SKM24T1G
APT33N90JCU3
APTC90SKM60T1G
APTM100SK18TG
APTM100SKM90G
APTM100SK33T1G
N/A
MOSFET
Type
100
MOS 5
500
MOS 7
600
CoolMOS
800
1000
CoolMOS
MOS 7
SP3
SP4
SP6
DUAL CHOPPER
VDSS
(V)
SP1
RDS (ON)
(mΩ)
ID (A)
TC=80º C
Package
NTC
19
9
100
65
45
70
35
24
150
350
50
100
24
37
38
29
54
70
21
17
SP3
SP3
SP3
SP3
SP1
SP1
SP3
SP3
SP3
SP3
YES
YES
YES
YES
YES
YES
YES
YES
YES
YES
“CoolMOSTM” is a trademark of Infineon Technologies AG.
27
...DDA...
...DSK...
APTM10DDAM19T3G
APTM10DDAM09T3G
APTM50DDA10T3G
APTM50DDAM65T3G
APTC60DDAM45T1G
APTC60DDAM70T1G
APTC60DDAM35T3G
APTC60DDAM24T3G
APTC80DDA15T3G
APTM100DDA35T3G
APTM10DSKM19T3G
APTM10DSKM09T3G
APTM50DSK10T3G
APTM50DSKM65T3G
APTC60DSKM45T1G
APTC60DSKM70T1G
APTC60DSKM35T3G
APTC60DSKM24T3G
APTC80DSK15T3G
APTM100DSK35T3G
All Power Modules RoHS Compliant
MOSFET Power Modules
FULL BRIDGE
VDSS
(V)
MOSFET
Type
100
FREDFET 5
200
FREDFET 7
500
FREDFET 7
FREDFET 8
600
CoolMOS
FREDFET 8
800
CoolMOS
900
CoolMOS
1000
1200
FREDFET 7
FREDFET 8
FREDFET 7
FREDFET 8
RDS (ON)
(mΩ)
ID (A)
TC=80º C
Package
NTC
Part Number
4.5
19
9
20
16
10
8
140
100
75
75
65
65
38
35
150
70
45
83
70
35
24
230
150
290
150
120
60
450
350
350
180
460
290
1400
207
50
100
62
74
125
147
18
24
32
32
37
37
64
70
19
29
38
21
29
54
70
15
21
11
21
23
44
14
17
17
33
14
25
6
SP6
SP3
SP3
SP4
SP4
SP6
SP6
SP3
SP3
SP4
SP3
SP4
SP3
SP6
SP6
SP1
SP1
SP1
SP2
SP3
SP3
SP3
SP1
SP1
SP3
SP3
SP1
SP3
SP3
SP4
SP3
SP6
SP3
SP6
SP1
YES
YES
YES
YES
YES
YES
YES
YES
YES
YES
YES
YES
YES
YES
YES
YES
YES
YES
YES
YES
YES
YES
YES
YES
YES
YES
YES
YES
APTM10HM05FG
APTM10HM19FT3G
APTM10HM09FT3G
APTM20HM20FTG
APTM20HM16FTG
APTM20HM10FG
APTM20HM08FG
APTM50H14FT3G
APTM50H10FT3G
APTM50HM75FTG
APTM50HM75FT3G
APTM50HM65FTG
APTM50HM65FT3G
APTM50HM38FG
APTM50HM35FG
APTM50H15FT1G
APTC60HM70T1G
APTC60HM45T1G
APTC60HM83FT2G
APTC60HM70T3G
APTC60HM35T3G
APTC60HM24T3G
APTM60H23FT1G
APTC80H15T1G
APTC80H29T3G
APTC80H15T3G
APTC90H12T1G
APTC90HM60T3G
APTM100H45FT3G
APTM100H35FTG
APTM100H35FT3G
APTM100H18FG
APTM100H46FT3G
APTM120H29FG
APTM120H140FT1G
SP1
SP2
SP3
SP4
SP6
FULL BRIDGE + SERIES AND PARALLEL DIODES
VDSS
(V)
MOSFET
Type
RDS (ON)
(mΩ)
ID (A)
TC=80º C
Package
NTC
Part Number
200
500
1000
MOS 7
MOS 7
MOS 7
20
75
450
62
32
13
SP4
SP4
SP4
YES
YES
YES
APTM20HM20STG
APTM50HM75STG
APTM100H45STG
ASYMMETRICAL BRIDGE
VDSS
(V)
MOSFET
Type
RDS (ON)
(mΩ)
ID (A)
TC=80º C
Package
NTC
Part Number
100
MOS5
200
MOS 7
4.5
16
8
38
65
24
207
77
147
64
32
70
SP6
SP3
SP6
SP6
SP3
SP3
YES
YES
YES
APTM10DHM05G
APTM20DHM16T3G
APTM20DHM08G
APTM50DHM38G
APTM50DHM65T3G
APTC60DHM24T3G
500
600
“CoolMOSTM” is a trademark of Infineon Technologies AG.
MOS 7
MOS 8
CoolMOS
28
All Power Modules RoHS Compliant
MOSFET Power Modules
PHASE LEG
VDSS
(V)
MOSFET
Type
100
FREDFET 5
200
FREDFET 7
500
FREDFET 7
CoolMOS
600
FREDFET 8
900
1000
CoolMOS
FREDFET 7
FREDFET 8
1200
FREDFET 7
FREDFET 8
RDS (ON)
(mΩ)
ID (A)
TC=80º C
Package
NTC
Part Number
4.5
2.25
10
8
5
4
38
35
19
17
45
42
35
24
24
110
60
60
180
90
400
290
150
650
207
370
125
147
250
300
64
70
125
140
38
40
54
70
70
30
44
44
33
59
16
25
45
12
SP4
SP6
SP4
SP4
SP6
SP6
SP4
SP4
SP6
SP6
SP1
SP2
SP1
SP1
SP2
SP1
SP1
SP2
SP4
SP6
SP1
SP4
SP6
SP1
YES
option
YES
YES
option
option
YES
YES
option
option
YES
YES
YES
YES
YES
YES
option
YES
YES
option
YES
APTM10AM05FTG
APTM10AM02FG
APTM20AM10FTG
APTM20AM08FTG
APTM20AM05FG
APTM20AM04FG
APTM50AM38FTG
APTM50AM35FTG
APTM50AM19FG
APTM50AM17FG
APTC60AM45T1G
APTC60AM42F2G
APTC60AM35T1G
APTC60AM24T1G
APTC60AM242G
APTM60A11FT1G
APTC90AM60T1G
APTC90AM602G
APTM100A18FTG
APTM100AM90FG
APTM100A40FT1G
APTM120A29FTG
APTM120A15FG
APTM120A65FT1G
SP1
SP2
SP4
PHASE LEG + SERIES AND PARALLEL DIODES
VDSS
(V)
MOSFET
Type
200
MOS 7
500
MOS 7
1000
MOS 7
1200
MOS 7
RDS (ON)
(mΩ)
ID (A)
TC=80º C
Package
NTC
Part Number
10
6
38
24
230
130
200
125
225
64
110
26
49
37
SP4
SP6
SP4
SP6
SP4
SP6
SP6
YES
YES
YES
-
APTM20AM10STG
APTM20AM06SG
APTM50AM38STG
APTM50AM24SG
APTM100A23STG
APTM100A13SG
APTM120A20SG
SP6
SP6-P
PHASE LEG + SERIES DIODES
VDSS
(V)
MOSFET
Type
RDS (ON)
(mΩ)
ID (A)
TC=80º C
Package
NTC
Part Number
1000
1200
MOS 7
MOS 7
130
200
49
37
SP6
SP6
-
APTM100A13DG
APTM120A20DG
MOSFET
Type
RDS (ON)
(mΩ)
ID (A)
TC=80º C
Package
NTC
Part Number
4.2
19
9
16
65
35
24
150
60
350
90
50
100
74
37
54
70
21
44
17
SP6-P
SP6-P
SP6-P
SP6-P
SP6-P
SP6-P
SP6-P
SP6-P
SP6-P
SP6-P
option
option
option
option
option
option
YES
option
YES
option
APTM08TAM04PG
APTM10TAM19FPG
APTM10TAM09FPG
APTM20TAM16FPG
APTM50TAM65FPG
APTC60TAM35PG
APTC60TAM24TPG
APTC80TA15PG
APTC90TAM60TPG
APTM100TA35FPG
TRIPLE PHASE LEG
VDSS
(V)
75
MOSFET
100
FREDFET 5
200
500
FREDFET 7
FREDFET 7
600
CoolMOS
800
900
1000
CoolMOS
CoolMOS
FREDFET 7
“CoolMOSTM” is a trademark of Infineon Technologies AG.
29
All Power Modules RoHS Compliant
MOSFET Power Modules
TRIPLE DUAL COMMON SOURCE
VDSS
(V)
MOSFET
Type
RDS (ON)
(mΩ)
ID (A)
TC=80º C
Package
NTC
Part Number
100
600
800
1200
MOS 5
CoolMOS
CoolMOS
MOS 7
9
35
150
570
100
54
21
13
SP6-P
SP6-P
SP6-P
SP6-P
option
option
option
option
APTM10TDUM09PG
APTC60TDUM35PG
APTC80TDU15PG
APTM120TDU57PG
SP1
DUAL COMMON SOURCE
VDSS
(V)
MOSFET
Type
RDS (ON)
(mΩ)
ID (A)
TC=80º C
Package
NTC
Part Number
100
MOS 5
200
MOS 7
500
MOS 7
1000
1200
MOS 7
MOS 7
2.25
8
5
4
35
17
90
150
370
147
250
300
70
140
59
45
SP6
SP4
SP6
SP6
SP4
SP6
SP6
SP6
YES
YES
-
APTM10DUM02G
APTM20DUM08TG
APTM20DUM05G
APTM20DUM04G
APTM50DUM35TG
APTM50DUM17G
APTM100DUM90G
APTM120DU15G
SP3
SP4
SINGLE SWITCH
VDSS
(V)
MOSFET
Type
100
FREDFET 5
200
500
FREDFET 7
FREDFET 7
1000
FREDFET 7
1200
FREDFET 7
RDS (ON)
(mΩ)
ID (A)
TC=80º C
Package
NTC
Part Number
2.25
1.5
3
9
60
45
70
430
640
434
371
97
160
126
SP6
SP6
SP6
SP6
SP6
SP6
SP6
option
option
option
option
option
option
option
APTM10UM02FAG
APTM10UM01FAG
APTM20UM03FAG
APTM50UM09FAG
APTM100UM60FAG
APTM100UM45FAG
APTM120UM70FAG
RDS (ON)
(mΩ)
ID (A)
TC=80º C
Package
NTC
Part Number
65
45
70
110
160
126
SP6
SP6
SP6
-
APTM100UM65DAG
APTM100UM45DAG
APTM120UM70DAG
SP6
SINGLE SWITCH + SERIES DIODE
VDSS
(V)
MOSFET
Type
1000
MOS 7
1200
MOS 7
SP6-P
SINGLE SWITCH + SERIES AND PARALLEL DIODES
VDSS
(V)
MOSFET
Type
RDS (ON)
(mΩ)
ID (A)
TC=80º C
Package
NTC
Part Number
200
500
1000
1200
MOS 7
MOS 7
MOS 7
MOS 7
4
13
65
100
310
250
110
86
SP6
SP6
SP6
SP6
option
option
option
option
APTM20UM04SAG
APTM50UM13SAG
APTM100UM65SAG
APTM120U10SAG
INTERLEAVED PFC
VDSS
(V)
MOSFET
Type
RDS (ON)
(mΩ)
ID (A)
TC=80º C
Package
NTC
Part Number
600
CoolMOS
45
24
38
70
SP1
SP3
YES
YES
APTC60VDAM45T1G
APTC60VDAM24T3G
“CoolMOSTM” is a trademark of Infineon Technologies AG.
30
All Power Modules RoHS Compliant
MOSFET Power Modules
SINGLE AND DUAL LINEAR MOSFET
VDSS
(V)
100
200
500
600
1000
MOSFET
Type
MOS 5
MOSFET Linear
MOS 4 Linear
RDS (ON)
(mΩ)
Shunt
Resistor (mR)
9
18
90
125
600
4.4
10
20
20
20
Package
NTC
SP1 or SP3
YES
YES
YES
YES
YES
APTML10UM09R004T1AG
APTML20UM18R010T1AG
APTML50UM90R020T1AG
APTML60U12R020T1AG
APTML100U60R020T1AG
APTML102UM09R004T3AG
APTML202UM18R010T3AG
APTML502UM90R020T3AG
APTML602U12R020T3AG
APTML1002U60R020T3AG
Renewable Energy Power Modules
FULL BRIDGE
VCES
(V)
600
CoolMOS
or
Fast IGBT
1200
Technology
Mix Trench IGBT
& NPT IGBT
Mix Trench IGBT
& CoolMOS
Mix Trench IGBT
& NPT IGBT
IC (A)
TC=80º C
VCE (on)(V)
at rated Ic
Package
NTC
Part Number
50
75
100
50
50
25
50
2.1/1.5
2.1/1.5
2.1/1.5
83mR/1.5
45mR/1.5
3.2/1.7
3.2/1.7
SP3
SP3
SP3
SP1
SP3
SP3
SP3
YES
YES
YES
YES
YES
YES
YES
APTGV50H60T3G
APTGV75H60T3G
APTGV100H60T3G
APTCV40H60CT1G
APTCV50H60T3G
APTGV25H120T3G
APTGV50H120T3G
SP1
SP3
PFC + BYPASS DIODE + PHASE LEG
VCES
(V)
Technology
IC (A)
TC=80º C
VCE (on)(V)
at rated Ic
Package
NTC
Special
Part Number
600
CoolMOS
38
38
27
27
45mR
45mR
83mR
83mR
SP1
SP1
SP1
SP1
N/A
N/A
N/A
N/A
10A PFC SiC diode
10A PFC SiC diode
-
APTC60AM45BC1G
APTC60AM45B1G
APTC60AM83BC1G
APTC60AM83B1G
IC (A)
TC=80º C
VCE (on)(V)
at rated Ic
Package
NTC
Part Number
50
100
25
50
2.1/1.5
2.1/1.5
3.2/1.7
3.2/1.7
SP4
SP6-P
SP4
SP6-P
YES
YES
APTGV50H60BG
APTGV100H60BTPG
APTGV25H120BG
APTGV50H120BTPG
PFC + FULL BRIDGE
VCES
(V)
Technology
600
Mix Trench IGBT
& NPT IGBT
1200
Mix Trench IGBT
& NPT IGBT
Fast IGBT
SP3F
PFC + BYPASS DIODE + FULL BRIDGE
VCES
(V)
600
Technology
Mix Trench IGBT
& CoolMOS
CoolMOS
Mix Trench IGBT
& NPT IGBT
SP4
IC (A)
TC=80º C
VCE (on)(V)
at rated Ic
Package
NTC
Special
Part Number
38
38
29
29
1.5/45mR
1.5/45mR
1.5/70mR
70mR
SP3F
SP3F
SP3F
SP3F
YES
YES
YES
YES
20A PFC SiC diode
-
APTCV60HM45BC20T3G
APTCV60HM45BT3G
APTCV60HM70BT3G
APTC60HM70BT3G
50
3.2/1.7
SP3F
YES
-
APTGV50H60BT3G
Package
NTC
Special
Part Number
YES
YES
YES
YES
YES
20A SiC antiparallel diode
-
APTCV60HM45RCT3G
APTCV60HM45RT3G
APTCV60HM70RT3G
APTC60HM70RT3G
APTGT50H60RT3G
SECONDARY FAST RECTIFIER + FULL BRIDGE
VCES
(V)
600
Technology
Mix Trench IGBT
& CoolMOS
CoolMOS
TRENCH 3
“CoolMOSTM” is a trademark of Infineon Technologies AG.
IC (A)
TC=80º C
38
38
29
29
50
VCE (on)(V)
at rated Ic
1.5/45mR
1.5/45mR
1.5/70mR
70mR
1.5
31
SP3F
SP3F
SP3F
SP3F
SP3F
SP6-P
Renewable Energy Power Modules
boost buck
VCES
(V)
Technology
600
600
IC (A)
TC=80º C
VCE (on)(V)
at rated Ic
Package
NTC
Part Number
70
100
24mR
1.5
SP3F
SP3F
YES
YES
APTC60BBM24T3G
APTGT100BB60T3G
IC (A)
TC=80º C
VCE (on)(V)
at rated Ic
Package
NTC
Part Number
20
30
30
50
50
75
100
150
200
300
30
50
300
400
60
240
100
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
2.1
2.1
1.5
1.5
1.85
1.8
2.0
SP1
SP3
SP1
SP3
SP1
SP3
SP3
SP6
SP6
SP6
SP1
SP3
SP6
SP6
SP3
SP6
SP6
YES
YES
YES
YES
YES
YES
-
APTGT20TL601G
APTGT30TL60T3G
APTGT30TL601G
APTGT50TL60T3G
APTGT50TL601G
APTGT75TL60T3G
APTGT100TL60T3G
APTGT150TL60G
APTGT200TL60G
APTGT300TL60G
APTGF30TL601G
APTGF50TL60T3G
APTGT300TL65G
APTGT400TL65G
APTGL60TL120T3G
APTGL240TL120G
APTGT100TL170G
CoolMOS
TRENCH 3
SP1
3-LEVEL NPC INVERTER
VCES
(V)
Technology
TRENCH 3
600
NPT FAST
650
SP1
SP3
Trench 3
1200
TRENCH 4
1700
TRENCH 3
VCES
(V)
Technology
RDS (ON)
CoolMOS
(mΩ)
VCE (on) IGBT (V)
/ Ic (A)
Package
NTC
Part Number
600
Mix Trench IGBT
& CoolMOS
24
45
70
99
1.5/75
1.5/75
1.5/50
1.5/30
SP3
SP3
SP3
SP3
YES
YES
YES
YES
APTCV60TLM24T3G
APTCV60TLM45T3G
APTCV60TLM70T3G
APTCV60TLM99T3G
900
Mix Trench IGBT
& CoolMOS
120
1.85/50
SP3
YES
APTCV90TL12T3G
SP3
NEW!
NEW!
SP3F
SP6 3-Level
T-TYPE 3-LEVEL INVERTER
VCES
(V)
Technology
IC (A)
TC=80º C
VCE (on)(V)
at rated Ic
Package
NTC
Special
Part Number
600/1200
TRENCH 4 FAST
40
80
200
2.05
2.05
2.05
SP3F
SP3F
SP6
YES
YES
NO
10A/600V SiC
30A/600V SiC
-
APTGLQ40HR120CT3G
APTGLQ80HR120CT3G
APTGLQ200HR120G
“CoolMOSTM” is a trademark of Infineon Technologies AG.
32
Power Modules with SiC Schottky Diodes
Extremely fast switching of SiC
Applications:
Schottky diode enables designs with:
• PFC
• Output Rectification
• Improved System Efficiency
• Higher Reliability
• Solar Inverter
• Lower System Switching Losses
• Motor Control
• Lower System Cost
• Snubber Diode
Smaller EMI Filter
Smaller Magnetic Components
Smaller Heat-Sink
Smaller Switches, Eliminate Snubbers
• Reduced System Size
Fewer / Smaller Components
Operating Frequency vs Drain Current
400
Frequency (kHz)
Silicon Carbide (SiC) Schottky Diodes offer superior dynamic
and thermal performance over conventional Silicon power
diodes. The main advantages of the SiC Schottky Diodes
are:
• Essentially zero forward and reverse recovery = reduced switch and diode switching losses
• Temperature independent switching behavior = stable high temperature performance
• Positive temperature coefficient of VF = ease of
parallel operation
• Usable 175°C Junction Temperature = safely operate at higher temperatures
300
SiC diode
200
Si diode
100
0
10
20
30
40
50
60
Drain Current (A)
Diode Power Modules with SiC Diodes
DUAL DIODE
VRRM
(V)
DIODE Type
600
SiC
1200
SiC
IF (A)
TC=100º C
VF (V)
TJ=25º C
Package
20
30
40
50
60
20
40
50
60
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
SOT-227
SOT-227
SOT-227
SOT-227
SOT-227
SOT-227
SOT-227
SOT-227
SOT-227
Anti-Parallel
Parallel
APT2X20DC60J
APT2X30DC60J
APT2X40DC60J
APT2X50DC60J
APT2X60DC60J
APT2X20DC120J
APT2X40DC120J
APT2X50DC120J
APT2X60DC120J
APT2X21DC60J
APT2X31DC60J
APT2X41DC60J
APT2X51DC60J
APT2X61DC60J
APT2X21DC120J
APT2X41DC120J
APT2X51DC120J
APT2X61DC120J
SOT-227
SP1
FULL BRIDGE
VRRM
(V)
DIODE Type
SiC
1200
SiC
IF (A)
TC=100º C
VF (V)
TJ=25º C
Package
Part Number
20
40
40
10
20
20
40
40
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
SP1
SP1
SOT-227
SOT-227
SP1
SOT-227
SP1
SOT-227
APTDC20H601G
APTDC40H601G
APT40DC60HJ
APT10DC120HJ
APTDC20H1201G
APT20DC120HJ
APTDC40H1201G
APT40DC120HJ
SP3F
IGBT Power Modules with SiC Diodes
BOOST CHOPPER
VRRM
(V)
IGBT Type
600
NPT
NPT
1200
TRENCH 4 FAST
IC (A)
TC=80º C
VCE (on)(V)
at rated Ic
Package
NTC
Part Number
50
15
25
50
25
40
2.1
3.2
3.2
3.2
2.05
2.05
SOT-227
SOT-227
SOT-227
SP1
SOT-227
SOT-227
YES
-
APT50GF60JCU2
APT15GF120JCU2
APT25GF120JCU2
APTGF50DA120CT1G
APT25GLQ120JCU2
APT40GLQ120JCU2
DUAL CHOPPER
VRRM
(V)
IGBT Type
IC (A)
TC=80º C
VCE (on)(V)
at rated Ic
Package
NTC
Part Number
1200
TRENCH 4 FAST
40
2.05
SP3F
YES
APTGLQ40DDA120CT3G
33
All Power Modules RoHS Compliant
Power Modules with SiC Schottky Diodes
MOSFETs & CoolMOS Power Modules with SiC Diodes
TM
single switch + series fred and sic parallel diodes
VDSS
(V)
MOSFET Type
RDS (ON)
(mΩ)
ID (A)
TC=80º C
Package
NTC
Part Number
1000
1200
MOS7
MOS7
65
100
110
86
SP6
SP6
option
option
APTM100UM65SCAVG
APTM120U10SCAVG
chopper
SOT-227
VDSS
(V)
MOSFET Type
500
MOS8
600
CoolMOS
900
CoolMOS
1000
MOS 8
1200
MOS 8
RDS (ON)
(mΩ)
ID (A)
TC=80º C
Package
NTC
65
45
24
18
120
60
330
560
300
43
38
70
107
25
44
20
15
23
SOT-227
SOT-227
SP1
SP4
SOT-227
SP1
SOT-227
SOT-227
SP1
YES
YES
YES
YES
…DA… or U2
…SK… or U3
APT58M50JCU2
APT50N60JCCU2
N/A
APTC60DAM18CTG
APT33N90JCCU2
APTC90DAM60CT1G
APT26M100JCU2
APT20M120JCU2
APTM120DA30CT1G
N/A
N/A
APTC60SKM24CT1G
N/A
N/A
APTC90SKM60CT1G
APT26M100JCU3
APT20M120JCU3
N/A
SP1
SP3F
PHASE LEG + SERIES FRED AND SiC PARALLEL DIODES
VDSS
(V)
MOSFET Type
500
MOS 7
600
CoolMOS
900
CoolMOS
800
CoolMOS
1000
MOS 7
RDS (ON)
(mΩ)
ID (A)
TC=80º C
Package
NTC
Part Number
38
24
35
24
18
60
150
100
75
130
67
110
54
70
107
44
21
32
43
49
SP4
SP6
SP4
SP4
SP6
SP4
SP4
SP4
SP6
SP6
YES
YES
YES
YES
YES
YES
-
APTM50AM38SCTG
APTM50AM24SCG
APTC60AM35SCTG
APTC60AM24SCTG
APTC60AM18SCG
APTC90AM60SCTG
APTC80A15SCTG
APTC80A10SCTG
APTC80AM75SCG
APTM100A13SCG
SP4
Full bridge + SERIES FRED AND SiC PARALLEL DIODES
VDSS
(V)
MOSFET Type
500
MOS 7
600
CoolMOS
800
900
1000
CoolMOS
CoolMOS
MOS 7
SP6
RDS (ON)
(mΩ)
ID (A)
TC=80º C
Package
NTC
Part Number
75
70
45
290
120
450
34
29
38
11
23
14
SP4
SP4
SP4
SP4
SP4
SP4
YES
YES
YES
YES
YES
YES
APTM50HM75SCTG
APTC60HM70SCTG
APTC60HM45SCTG
APTC80H29SCTG
APTC90H12SCTG
APTM100H45SCTG
SP6-P
triple phase leg
VDSS
(V)
MOSFET Type
RDS (ON)
(mΩ)
ID (A)
TC=80º C
Package
NTC
Part Number
600
1000
CoolMOS
MOS 7
24
350
87
50
SP6-P
SP6-P
YES
YES
APTC60TAM21SCTPAG
APTM100TA35SCTPG
“CoolMOSTM” is a trademark of Infineon Technologies AG.
34
SiC MOSFET Power Modules
T-TYPE 3-LEVEL INVERTER
VCES
(V)
Technology
RDS (ON)
(mΩ)
ID (A)
TC=80º C
Package
NTC
Part Number
600/1200
IGBT &
SiC MOSFET
110
40
20
50
SP3F
SP3F
YES
YES
APTMC120HR11CT3G
APTMC120HRM40CT3G
Technology
RDS (ON)
(mΩ)
ID (A)
TC=80º C
Package
NTC
Part Number
SiC MOSFET
110
55
14
20
40
160
SP3F
SP3F
SP6
YES
YES
-
APTMC60TL11CT3AG
APTMC60TLM55CT3AG
APTMC60TLM14CAG
SOT-227
3-LEVEL NPC INVERTER
VCES
(V)
600
SP1
SP3F
Phase leg
VCES
(V)
1200
1700
Technology
SiC MOSFET
SiC MOSFET
RDS (ON)
(mΩ)
ID (A)
TC=80º C
Package
NTC
Part Number
55
25
20
16
12
9
8
60
30
40
80
108
102
150
200
200
40
80
SP1
SP3
SP1
D3
SP3
SP3
D3
SP1
SP1
YES
YES
YES
YES
YES
YES
YES
APTMC120AM55CT1AG
APTMC120A25CT3AG
APTMC120AM20CT1AG
APTMC120AM16CD3AG
APTMC120AM12CT3AG
APTMC120AM09CT3AG
APTMC120AM08CD3AG
APTMC170AM60CT1AG
APTMC170AM30CT1AG
Part Number
NEW!
NEW!
NEW!
NEW!
SP6 3-Level
NEW!
NEW!
Triple Phase leg
VCES
(V)
Technology
RDS (ON)
(mΩ)
ID (A)
TC=80º C
Package
NTC
1200
SiC MOSFET
33
17
12
60
100
150
SP6-P
SP6-P
SP6-P
YES
YES
YES
D3
APTMC120TAM33CTPAG NEW!
APTMC120TAM17CTPAG NEW!
APTMC120TAM12CTPAG NEW!
boost chopper
VCES
(V)
Technology
RDS (ON)
(mΩ)
ID (A)
TC=80º C
Package
NTC
Part Number
1200
SiC MOSFET
40
50
SOT-227
-
APT50MC120JCU2
35
SP6-P
DIODE Power Modules
single diode
VRRM
(V)
DIODE
Type
IF (A)
TC=80º C
VF (V)
TJ=25º C
FRED
500
500
450
430
400
1.1
1.5
1.8
2.3
2.5
Package
LP4
200
400
600
1000
1200
LP4
APTDF500U20G
APTDF500U40G
APTDF450U60G
APTDF430U100G
APTDF400U120G
single diode - non isolated package
Half Pack
VRRM
(V)
DIODE
Type
IF (A)
per Diode
VF (V)
TJ=25º C
600
400
30
40
FRED
RECTIFIER
100
300
180
240
120
180
240
120
180
240
240
240
240
1.35
1.1
0.55
0.56
0.55
0.72
0.57
45
SCHOTTKY
100
150
180
200
Non Isolated
Packages
Package
Half-Pack
SDM
Half-Pack
0.91
0.86
0.87
0.88
0.89
Cathode to Base
Cathode to Base
HU10260
SDM30004
HS18230
HS24040
HS12045
HS18145
HS24045
HS123100
HS183100
HS243100
HS246150
HS247180
HS247200
HU10260R
SDM30004R
HS18230R
HS24040R
HS12045R
HS18145R
HS24045R
HS123100R
HS183100R
HS243100R
HS246150R
HS247180R
HS247200R
SDM
SM1
SM2
3-PHASE BRIDGE
VRRM
(V)
DIODE
Type
1600
RECTIFIER
800
1200
1600
1800
RECTIFIER
IF (A)
TC=80º C
VF (V)
TJ=25º C
Package
Part Number
40
90
30
50
50
52
75
75
100
100
130
150
160
200
200
1.3
1.3
1.6
1.5
1.45
1.8
1.6
1.38
1.9
1.7
1.8
1.28
1.65
1.55
1.31
SP1
SP1
SM1
SM1
SM2-1
SM2
SM2
SM2-1
SM3
SM2-1
SM3
SM3-1
SM3
SM3
SM3-1
APTDR40X1601G
APTDR90X1601G
MSD30-08/12/16/18
MSD50-08/12/16/18
MSDM50-08/12/16/18
MSD52-08/12/16/18
MSD75-08/12/16/18
MSDM75-08/12/16/18
MSD100-08/12/16/18
MSDM100-08/12/16/18
MSD130-08/12/16/18
MSDM150-08/12/16/18
MSD160-08/12/16/18
MSD200-08/12/16/18
MSDM200-08/12/16/18
SM2-1
SM3
SM3-1
3-PHASE BRIDGE + THYRISTOR
VRRM
(V)
DIODE
Type
IF (A)
TC=80º C
VF (V)
TJ=25º C
Package
Part Number
1600
RECTIFIER
THYRISTOR
75
100
150
200
1.4
1.35
1.35
1.35
SM4
SM4
SM4
SM5
MSDT75-16
MSDT100-16
MSDT150-16
MSDT200-16
SM4
SM5
36
All Power Modules RoHS Compliant
DIODE Power Modules
full BRIDGE
VRRM
(V)
DIODE
Type
200
600
FRED
1000
1200
1700
100
200
400
SCHOTTKY
IF (A)
TC=80º C
VF (V)
TJ=25º C
Package
Style
30
60
100
30
30
60
60
75
100
100
200
30
100
200
30
60
200
50
75
100
200
60
1.0
1.0
1.0
1.8
1.8
1.8
1.8
1.6
1.6
1.6
1.6
2.1
2.1
2.1
2.6
2.6
2.4
1.8
1.8
2.2
2.2
0.9
SOT-227
SOT-227
SP4
SP1
SOT-227
SOT-227
SP1
SOT-227
SOT-227
SP1
SP6
SOT-227
SP4
SP6
SP1
SP1
SP6
SOT-227
SOT-227
SP4
SP6
SOT-227
10
RECTIFIER
1600
250-700
450-900
660-1100
VJ
1.3
40
90
Controlled
Avalanche
Rectifiers
SOT-227
10
1.3
VJ
Part Number
APT30DF20HJ
APT60DF20HJ
APTDF100H20G
APTDF30H601G
APT30DF60HJ
APT60DF60HJ
APTDF60H601G
APT75DL60HJ
APT100DL60HJ
APTDF100H601G
APTDF200H60G
APT30DF100HJ
APTDF100H100G
APTDF200H100G
APTDF30H1201G
APTDF60H1201G
APTDF200H120G
APT50DF170HJ
APT75DF170HJ
APTDF100H170G
APTDF200H170G
APT60DS10HJ
VJ248M
VJ448M
APT40DR160HJ
APT90DR160HJ
VJ247M
VJ447M
VJ647M
SOT-227
SP1
SP4
SP6
VJ
THYRISTOR & DIODE DOUBLER
VRRM
(V)
800
1200
1600
DIODE
Type
IF (A)
per Diode
VF/VTM (V)
TJ=25º C
RECTIFIER
THYRISTOR
25
40
60
90
110
130
160
1.8
1.95
1.65
1.65
1.65
1.8
1.7
Package
Style
Thyristor Diode Doubler
MSFC25-08/12/16
MSFC40-08/12/16
MSFC60-08/12/16
MSFC90-08/12/16
MSFC110-08/12/16
MSFC130-08/12/16
MSFC160-08/12/16
SF1
D1
Thyristor Doubler
MSTC25-08/12/16
MSTC40-08/12/16
MSTC60-08/12/16
MSTC90-08/12/16
MSTC110-08/12/16
MSTC130-08/12/16
MSTC160-08/12/16
D1
SF1
37
DIODE Power Modules
COMMON CATHODE - COMMON ANODE - DOUBLER
VRRM
(V)
200
600
1000
1200
1700
DIODE
Type
FRED
800-1200RECTIFIER
1600-1800
200
400
IF (A)
VF (V)
per Diode TJ=25º C
400
36
60
70
100
120
165
200
60
70
100
FRED
500
200
70
100
35
600
70
60
70
30
250
300
150
40
80
80
100
150
200
250
800
30
35
40
45
300
50
SCHOTTKY
60
80
150
60
80
90
100
150
250
200
80
150
200
40
60
80
150
200
250
300
1.0
1.6
2.1
2.4
2.2
Package
SP6
SD1
1.15
SD2
0.98
0.98
0.98
1.25
0.98
1.25
1.25
1.20
1.35
1.35
1.35
1.35
0.47
0.55
0.65
0.76
0.53
0.65
0.74
0.68
0.62
0.57
0.55
0.55
0.65
0.8
0.74
0.78
0.82
0.73
0.89
0.96
0.98
0.90
0.82
0.86
0.96
0.98
0.91
0.90
0.85
0.85
TwinTower
TO-249 Flat Pack
TwinTower
TO-249 Flat Pack
TwinTower
Mini-Mod
TO-249 Flat Pack
TwinTower
TO-249 Flat Pack
TO-249 Flat Pack
TwinTower
Mini-Mod
TO-249 Flat Pack
TwinTower
TO-249 Flat Pack
TwinTower
TO-249 Flat Pack
TwinTower
Mini-Mod
TO-249, 9 Pins
TO-249, Flat Pack
Twin Tower
Common Cathode
Common Anode
Doubler
APTDF400KK20G
APTDF400KK60G
APTDF400KK100G
APTDF400KK120G
APTDF400KK170G
MSKD36-08/12/16/18
MSKD60-08/12/16/18
MSKD70-08/12/16/18
MSKD100-08/12/16/18
MSKD120-08/12/16/18
MSKD165-08/12/16/18
MSKD200-08/12/16/18
UFT12520
UFT14020
UFT20020
UFT20120
UFT40020
UFT14140
UFT20140
UFT7150
UFT7260SMxC
UFT14260
UFT12780
UFT14280
FST16230
CPT50235
CPT60035
CPT30040
FST8145
FST16145
FST16045
CPT20145
CPT30145
CPT40145
CPT50145
CPT60145
CPT60045
CPT12050
FST16050
CPT30050
CPT30060
CPT50060
CPT40080
FST16090
CPT30090
CPT40090
FST80100
FST60100
FST160100
CPT300100
CPT400100
CPT500100
CPT600100
CPT600150
APTDF400AA20G
APTDF400AA60G
APTDF400AA100G
APTDF400AA120G
APTDF400AA170G
MSAD36-08/12/16/18
MSAD60-08/12/16/18
MSAD70-08/12/16/18
MSAD100-08/12/16/18
MSAD120-08/12/16/18
MSAD165-08/12/16/18
MSAD200-08/12/16/18
UFT12520A
UFT14020A
UFT20020A
UFT20120A
UFT40020A
UFT14140A
UFT20140A
UFT7150A
UFT7260SMxA
UFT14260A
UFT12780A
UFT14280A
FST16230A
CPT50235A
CPT60035A
CPT30040A
FST8145A
FST16145A
FST16045A
CPT20145A
CPT30145A
CPT40145A
CPT50145A
CPT60145A
CPT60045A
CPT12050A
FST16050A
CPT30050A
CPT30060A
CPT50060A
CPT40080A
FST16090A
CPT30090A
CPT40090A
FST80100A
FST60100A
FST160100A
CPT300100A
CPT400100A
CPT500100A
CPT600100A
CPT600150A
APTDF400AK20G
APTDF400AK60G
APTDF400AK100G
APTDF400AK120G
APTDF400AK170G
MSCD36-08/12/16/18
MSCD60-08/12/16/18
MSCD70-08/12/16/18
MSCD100-08/12/16/18
MSCD120-08/12/16/18
MSCD165-08/12/16/18
MSCD200-08/12/16/18
UFT12520D
UFT14020D
UFT20020D
UFT20120D
UFT40020D
UFT14140D
UFT20140D
UFT7150D
UFT7260SMxD
UFT14260D
UFT12780D
UFT14280D
FST16230D
CPT50235D
CPT60035D
CPT30040D
FST8145D
FST16145D
FST16045D
CPT20145D
CPT30145D
CPT40145D
CPT50145D
CPT60145D
CPT60045D
CPT12050D
FST16050D
CPT30050D
CPT30060D
CPT50060D
CPT40080D
FST16090D
CPT30090D
CPT40090D
FST80100D
FST60100D
FST160100D
CPT300100D
CPT400100D
CPT500100D
CPT600100D
CPT600150D
SP6
SD1
SD2
Non Isolated
Packages
SM1
SM3
SM5
SM2
SM4
SM6
x option for Mini-Mod Surface Mount Package
Mini-Mod
Surface Mount
Mini-Mod
TO-249
Flat Pack
Twin Tower
Non Isolated
10-pin TO-249
38
All Power Modules RoHS Compliant
Pin out location depends on the module configuration. Please refer to
the product datasheet for pins assignment. All dimensions in millimeters.
Package Outlines
D3 Pak
or TO-268
TO-220 [KF]
Revised
8/29/97
Revised
4/18/95
TO-220 2-Lead
TO-220 3-Lead
C a th o d e
C a th o d e
A node
TO-247 3-Lead
TO-247 2-Lead
T-MAX®
TO-264
264 MAX™
ISOTOP® or SOT-227
Refer to web page for additional package outline drawings
39
ISOTOP® is a registered trademark of SGS Thomson
Power Module Outlines
Pin out location depends on the module configuration. Please refer to
the product datasheet for pins assignment. All dimensions in millimeters.
D3
D4
LP4
LP8
SP1
11.5±0.5
17.5±0.5
D1
51.6±0.5
4.3±0.25
40.8±0.5
R5
45±0.25
SP2
11,5 ±0,5
17,6 ±0,5
SP3
73,4 ±0,5
17
28
1
12
64 ±0,25
40
4,5 ±0,25
40,8 ±0,5
R5
Pin out location depends on the module configuration. Please refer to
the product datasheet for pins assignment. All dimensions in millimeters.
Power Module Outlines
SP3F
SF1
SP4
SP6 - 3 outputs
2,80 x 0,5
6,50
15
16
16,98
22
7,8 MAX
108
93
13,50
M
14
5
(3x
)
12
0
48
62
7,50
7,50
13,50
Ø 6,40 (4x)
28
,50
28
48
R6
Ø 12 (4x)
SP6 4 outputs, Version 2
SP6 - 4 outputs, Version 1
26/10/12
2,80
7,8 MAX
2,80
x 0,5
x 0,5
17
15
6,50
15
6,50
15
15
17
22
22
7,8 MAX
108
108
93
93
M 5
(4x)
M 5
(4x)
18,20
12
13,50
18,20
14
13,50
13,50
17
Ø 6,40 (4x)
Ø 6,40 (4x)
27
48
Ø 12 (4x)
26/10/12
26/10/12
SD1
SP6-P
41
48
27
27
48
,50
28
,50
R6
48
R6
Ø 12 (4x)
62
0
7,50
7,50
48
7,50
5,10
48
62
0
14
7,50
18,20
12
13,50
Power Module Outlines
Pin out location depends on the module configuration. Please refer to
the product datasheet for pins assignment. All dimensions in millimeters.
SD2
SM1
SM2
SM2-1
SM3
SM3-1
SM4
SM5
42
Pin out location depends on the module configuration. Please refer to
the product datasheet for pins assignment. All dimensions in millimeters.
Power Module Outlines
SDM
VJ
A
D
Dim. Inches
Min.
B
F
G
H
H
K
C
L
M
A
B
C
D
F
G
H
K
L
M
Max.
Min.
Millimeters
Max.
67.31
--31.49
32.00
--23.49
50.80 BSC
8.13
8.64
5/16-18 UNC
--16.00
--0.640
15.49
16.26
.100
--2.54
0.192
4.62
4.88
2.650
--1.240
1.260
--.925
2.00 BSC
0.320
0.340
0.630
0.610
--0.182
Notes
Dia.
Standard Polarity: Base plate is cathode
Reverse Polarity: Base plate is anode
Mini-Mod Surface Mount
Mini-Mod
TO-249
9 Pin TO-249
Twin Tower
Half-Pack
D
G
Dim. Inches
J
Minimum
B
K
H
A
43
F
C
E
L
A
B
C
D
E
F
G
H
J
K
L
1.52
.725
.605
1.182
.745
.152
.525
.156
.495
.120
Millimeter
Maximum
Minimum
38.61
1.56
18.42
.775
15.37
.625
30.02
1.192
18.92
.755
3.86
.160
1/4-20 UNC-2B
13.34
.580
3.96
.160
12.57
.505
3.05
.130
Std. Polarity: Base is cathode
Rev. Polarity: Base is anode
Maximum
39.62
19.69
15.88
30.28
19.18
4.06
14.73
4.06
12.83
3.30
Notes
Sq.
Dia.
Dia.
Microsemi Power
Semiconductor Products
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email: [email protected]
www.microsemi.com
Microsemi Corporation (Nasdaq: MSCC) offers a comprehensive portfolio of semiconductor and system solutions
for communications, defense & security, aerospace and industrial markets. Products include high-performance and
radiation-hardened analog mixed-signal integrated circuits, FPGAs, SoCs and ASICs; power management products;
timing and synchronization devices and precise time solutions, setting the world’s standard for time; voice processing
devices; RF solutions; discrete components; security technologies and scalable anti-tamper products; Power-overEthernet ICs and midspans; as well as custom design capabilities and services. Microsemi is headquartered in Aliso
Viejo, Calif., and has approximately 3,400 employees globally. Learn more at www.microsemi.com.
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and service marks are the property of their respective owners. Microsemi reserves the right to change, without notice, the specifications and information
contained herein.
MS5-001-14