BC556 ... BC559 BC556 ... BC559 IC = -100 mA hFE ~ 120/200/400 Tjmax = 150°C General Purpose PNP Transistors Universal-PNP-Transistoren VCEO = -30 ...-65 V Ptot = 500 mW Version 2017-12-08 (1) 18 9 16 CBE Typische Anwendungen Signalverarbeitung, Schalten, Verstärken Standardausführung 1) Features General Purpose Three current gain groups Compliant to RoHS, REACH, Conflict Minerals 1) RoHS Pb EE WE 2 x 2.54 Typical Applications Signal processing, Switching, Amplification Commercial grade 1) EL V TO-92 (10D3) Mechanical Data 1) ±0.1 (2) CBE min 12.5 4.6±0.1 4.6 2 x 1.27 Besonderheiten Universell anwendbar Drei Stromverstärkungsklassen Konform zu RoHS, REACH, Konfliktmineralien 1) Mechanische Daten 1) (1) Taped in ammo pack (Raster 2.54) (2) On request: in bulk (Raster 1.27, suffix “BK”) Weight approx. 4000 5000 (1) Gegurtet in Ammo-Pack (Raster 2.54) (2) Auf Anfrage: Schüttgut (Raster 1.27, Suffix “BK”) 0.18 g Gewicht ca. Case material UL 94V-0 Gehäusematerial Solder & assembly conditions 260°C/10s Löt- und Einbaubedingungen MSL N/A Dimensions - Maße [mm] Recommended complementary NPN transistors Empfohlene komplementäre NPN-Transistoren BC546 ... BC549 Maximum ratings 2) Grenzwerte 2) BC556 BC557 BC558/559 Collector-Emitter-voltage – Kollektor-Emitter-Spannung E-B short - VCES 80 V 50 V 30 V Collector-Emitter-voltage – Kollektor-Emitter-Spannung B open - VCEO 65 V 45 V 30 V Emitter-Base-voltage – Emitter-Basis-Spannung E open - VCBO 80 V 50 V 30 V Emitter-Base-voltage – Emitter-Basis-Spannung C open - VEBO 5V Ptot 500 mW 3) - IC 100 mA Peak Collector current – Kollektor-Spitzenstrom - ICM 200 mA Peak Base current – Basis-Spitzenstrom - IBM 200 mA Peak Emitter current – Emitter-Spitzenstrom IEM 200 mA Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Tj TS -55...+150°C -55…+150°C Power dissipation – Verlustleistung Collector current – Kollektorstrom 1 2 3 DC Please note the detailed information on our website or at the beginning of the data book Bitte beachten Sie die detaillierten Hinweise auf unserer Internetseite bzw. am Anfang des Datenbuches TA = 25°C, unless otherwise specified – TA = 25°C, wenn nicht anders angegeben Valid, if leads are kept at ambient temperature at a distance of 2 mm from case Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden © Diotec Semiconductor AG http://www.diotec.com/ 1 BC556 ... BC559 Characteristics Kennwerte Tj = 25°C Min. Typ. Max. 1 DC current gain – Kollektor-Basis-Stromverhältnis ) - VCE = 5 V, - IC = 10 µA Group A Group B Group C hFE – – – 90 150 270 – – – - VCE = 5 V, - IC = 2 mA Group A Group B Group C hFE 110 200 420 – – – 220 450 800 - VCE = 5 V, - IC = 100 mA Group A Group B Group C hFE – – – 120 200 400 – – – Collector-Emitter cutoff current – Kollektor-Emitter-Reststrom - VCE = 80 V, (B-E short) - VCE = 50 V, (B-E short) - VCE = 30 V, (B-E short) BC556 BC557 BC558 / BC559 - ICES – – – 0.2 nA 0.2 nA 0.2 nA 15 nA 15 nA 15 nA - VCE = 80 V, Tj = 125°C, (B-E short) - VCE = 50 V, Tj = 125°C, (B-E short) - VCE = 30 V, Tj = 125°C, (B-E short) BC556 BC557 BC558 / BC559 - ICES – – – – – – 4 µA 4 µA 4 µA – – 80 mV 250 mV 300 mV 650 mV - VBEsat – – 700 mV 900 mV – – - VBE 600 mV – 660 mV – 750 mV 820 mV fT – 150 MHz – CCBO – 3.5 pF 6 pF CEBO – 10 pF – F – – 2 dB 1 dB 10 dB 4 dB Collector-Emitter saturation voltage – Kollektor-Emitter-Sättigungsspg 1) - IC = 10 mA, - IB = 0.5 mA - IC = 100 mA, - IB = 5 mA - VCEsat Base-Emitter saturation voltage – Basis-Emitter-Sättigungsspannung 1) - IC = 10 mA, - IB = 0.5 mA - IC = 100 mA, - IB = 5 mA Base-Emitter-voltage – Basis-Emitter-Spannung 1) - VCE = 5 V, - IC = 2 mA - VCE = 5 V, - IC = 10 mA Gain-Bandwidth Product – Transitfrequenz - VCE = 5 V, - IC = 10 mA, f = 100 MHz Collector-Base Capacitance – Kollektor-Basis-Kapazität - VCB = 10 V, IE =ie = 0, f = 1 MHz Emitter-Base Capacitance – Emitter-Basis-Kapazität - VEB = 0.5 V, IC = ic = 0, f = 1 MHz Noise figure – Rauschzahl - VCE = 5 V, - IC = 200 µA, RG = 2 kΩ f = 1 kHz, Δf = 200 Hz BC556 ... BC558 BC559 Thermal resistance junction to ambient Wärmewiderstand Sperrschicht – Umgebung RthA < 200 K/W 2) Disclaimer: See data book page 2 or website Haftungssauschluss: Siehe Datenbuch Seite 2 oder Internet 1 2 2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% Valid, if leads are kept at ambient temperature at a distance of 2 mm from case Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden http://www.diotec.com/ © Diotec Semiconductor AG