Diotec BC559 General purpose pnp transistor Datasheet

BC556 ... BC559
BC556 ... BC559
IC
= -100 mA
hFE ~ 120/200/400
Tjmax = 150°C
General Purpose PNP Transistors
Universal-PNP-Transistoren
VCEO = -30 ...-65 V
Ptot = 500 mW
Version 2017-12-08
(1)
18
9
16
CBE
Typische Anwendungen
Signalverarbeitung,
Schalten, Verstärken
Standardausführung 1)
Features
General Purpose
Three current gain groups
Compliant to RoHS, REACH,
Conflict Minerals 1)
RoHS
Pb
EE
WE
2 x 2.54
Typical Applications
Signal processing,
Switching, Amplification
Commercial grade 1)
EL
V
TO-92 (10D3)
Mechanical Data 1)
±0.1
(2)
CBE
min 12.5
4.6±0.1
4.6
2 x 1.27
Besonderheiten
Universell anwendbar
Drei Stromverstärkungsklassen
Konform zu RoHS, REACH,
Konfliktmineralien 1)
Mechanische Daten 1)
(1) Taped in ammo pack
(Raster 2.54)
(2) On request: in bulk
(Raster 1.27, suffix “BK”)
Weight approx.
4000
5000
(1) Gegurtet in Ammo-Pack
(Raster 2.54)
(2) Auf Anfrage: Schüttgut
(Raster 1.27, Suffix “BK”)
0.18 g
Gewicht ca.
Case material
UL 94V-0
Gehäusematerial
Solder & assembly conditions
260°C/10s
Löt- und Einbaubedingungen
MSL N/A
Dimensions - Maße [mm]
Recommended complementary NPN transistors
Empfohlene komplementäre NPN-Transistoren
BC546 ... BC549
Maximum ratings 2)
Grenzwerte 2)
BC556
BC557
BC558/559
Collector-Emitter-voltage – Kollektor-Emitter-Spannung
E-B short
- VCES
80 V
50 V
30 V
Collector-Emitter-voltage – Kollektor-Emitter-Spannung
B open
- VCEO
65 V
45 V
30 V
Emitter-Base-voltage – Emitter-Basis-Spannung
E open
- VCBO
80 V
50 V
30 V
Emitter-Base-voltage – Emitter-Basis-Spannung
C open
- VEBO
5V
Ptot
500 mW 3)
- IC
100 mA
Peak Collector current – Kollektor-Spitzenstrom
- ICM
200 mA
Peak Base current – Basis-Spitzenstrom
- IBM
200 mA
Peak Emitter current – Emitter-Spitzenstrom
IEM
200 mA
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
-55...+150°C
-55…+150°C
Power dissipation – Verlustleistung
Collector current – Kollektorstrom
1
2
3
DC
Please note the detailed information on our website or at the beginning of the data book
Bitte beachten Sie die detaillierten Hinweise auf unserer Internetseite bzw. am Anfang des Datenbuches
TA = 25°C, unless otherwise specified – TA = 25°C, wenn nicht anders angegeben
Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
© Diotec Semiconductor AG
http://www.diotec.com/
1
BC556 ... BC559
Characteristics
Kennwerte
Tj = 25°C
Min.
Typ.
Max.
1
DC current gain – Kollektor-Basis-Stromverhältnis )
- VCE = 5 V, - IC = 10 µA
Group A
Group B
Group C
hFE
–
–
–
90
150
270
–
–
–
- VCE = 5 V, - IC = 2 mA
Group A
Group B
Group C
hFE
110
200
420
–
–
–
220
450
800
- VCE = 5 V, - IC = 100 mA
Group A
Group B
Group C
hFE
–
–
–
120
200
400
–
–
–
Collector-Emitter cutoff current – Kollektor-Emitter-Reststrom
- VCE = 80 V, (B-E short)
- VCE = 50 V, (B-E short)
- VCE = 30 V, (B-E short)
BC556
BC557
BC558 / BC559
- ICES
–
–
–
0.2 nA
0.2 nA
0.2 nA
15 nA
15 nA
15 nA
- VCE = 80 V, Tj = 125°C, (B-E short)
- VCE = 50 V, Tj = 125°C, (B-E short)
- VCE = 30 V, Tj = 125°C, (B-E short)
BC556
BC557
BC558 / BC559
- ICES
–
–
–
–
–
–
4 µA
4 µA
4 µA
–
–
80 mV
250 mV
300 mV
650 mV
- VBEsat
–
–
700 mV
900 mV
–
–
- VBE
600 mV
–
660 mV
–
750 mV
820 mV
fT
–
150 MHz
–
CCBO
–
3.5 pF
6 pF
CEBO
–
10 pF
–
F
–
–
2 dB
1 dB
10 dB
4 dB
Collector-Emitter saturation voltage – Kollektor-Emitter-Sättigungsspg 1)
- IC = 10 mA, - IB = 0.5 mA
- IC = 100 mA, - IB = 5 mA
- VCEsat
Base-Emitter saturation voltage – Basis-Emitter-Sättigungsspannung 1)
- IC = 10 mA, - IB = 0.5 mA
- IC = 100 mA, - IB = 5 mA
Base-Emitter-voltage – Basis-Emitter-Spannung 1)
- VCE = 5 V, - IC = 2 mA
- VCE = 5 V, - IC = 10 mA
Gain-Bandwidth Product – Transitfrequenz
- VCE = 5 V, - IC = 10 mA, f = 100 MHz
Collector-Base Capacitance – Kollektor-Basis-Kapazität
- VCB = 10 V, IE =ie = 0, f = 1 MHz
Emitter-Base Capacitance – Emitter-Basis-Kapazität
- VEB = 0.5 V, IC = ic = 0, f = 1 MHz
Noise figure – Rauschzahl
- VCE = 5 V, - IC = 200 µA, RG = 2 kΩ
f = 1 kHz, Δf = 200 Hz
BC556 ... BC558
BC559
Thermal resistance junction to ambient
Wärmewiderstand Sperrschicht – Umgebung
RthA
< 200 K/W 2)
Disclaimer: See data book page 2 or website
Haftungssauschluss: Siehe Datenbuch Seite 2 oder Internet
1
2
2
Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
http://www.diotec.com/
© Diotec Semiconductor AG
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