SUNMATE FR3GBF Surface mount fast recover y rectifier diode Datasheet

FR3ABF - FR3MBF
SURFACE MOUNT FAST RECOVERY RECTIFIER DIODES
VOLTAGE RANGE: 50-1000V
CURRENT: 3.0 A
Features
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!
Glass Passivated Die Construction
Fast Recovery Time for High Efficiency
Low Forward Voltage Drop and High Current
Capability
!
Ideally Suited for Automatic Assembly
Plastic Material: UL Flammability
Classification Rating 94V-0
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!
B
C
E
Mechanical Data
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!
Case:SMBF , Molded Plastic
Terminals: Solder Plated, Solderable
!
per MIL-STD-750, Method 2026
Polarity: Cathode Band or Cathode Notch
!
!
Marking: Type Number
Weight: 0.0018 ounces,0.05grams
SMBF
Dim Min Max Typ
A 5.45 5.55 5.50
B 4.27 4.33 4.30
C 3.57 3.63 3.60
D 1.32 1.38 1.35
E 1.96 2.00 1.98
H 0.019 0.021 0.20
L
0.73 0.77 0.75
All Dimensions in mm
D
H
L
E
A
Maximum Ratings and Electrical Characteristics
TA = 25C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic
Symbol FR3ABF FR3BBF FR3DBF FR3GBF FR3JBF FR3KBF FR3MBF Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
@ TT = 75C
Average Rectified Output Current
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave Superimposed on Rated Load
(JEDEC Method)
Forward Voltage
@ I F = 3.0A
Peak Reverse Current
at Rated DC Blocking Voltage
@ TA = 25C
@ TA = 125C
VRRM
VRWM
VR
50
100
200
VR(RMS)
35
70
140
1000
V
280
420
560
700
V
A
IFSM
100
A
VFM
1.3
V
IRM
5.0
250
A
trr
Cj
Notes:
800
3.0
Maximum Recovery Time (Note 3)
Operating and Storage Temperature Range
600
IO
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance Junction to Terminal (Note 1)
400
150
250
500
ns
50
pF
RJT
25
K/W
Tj, TSTG
-65 to +150
C
1. Thermal resistance: junction to terminal, unit mounted on PC board with 5.0 mm2 (0.013 mm thick) copper pad as heat sink.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3. Reverse recovery test conditions: IF = 0.5A, IR = 1.0A, Irr = 0.25A. See figure 5.
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IF, INSTANTANEOUS FORWARD CURRENT (A)
I(AV), AVERAGE FORWARD CURRENT (A)
3.0
2.5
2.0
1.5
1.0
0.5
0
10
1.0
0.1
Tj = 25°C
IF Pulse Width: 300 µs
0.01
25
50
75
100
125
150
175
0
IR, INSTANTANEOUS REVERSE CURRENT (µA)
IFSM, PEAK FORWARD SURGE CURRENT (A)
Single Half-Sine-Wave
(JEDEC Method)
100
80
60
40
20
0
10
0.8
1.2
1.6
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
TT, TERMINAL TEMPERATURE (°C)
Fig. 1 Forward Current Derating Curve
1
0.4
1000
Tj = 125°C
100
10
0.1
100
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Forward Surge Current Derating Curve
Tj = 25°C
1.0
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig. 4 Typical Reverse Characteristics
trr
+0.5A
50Ω NI (Non-inductive)
10Ω NI
Device
Under
Test
(-)
0A
(+)
Pulse
Generator
(Note 2)
50V DC
Approx
(-)
1.0Ω
NI
Oscilloscope
(Note 1)
-0.25A
(+)
Notes:
1. Rise Time = 7.0ns max. Input Impedance = 1.0MΩ, 22pF.
2. Rise Time = 10ns max. Input Impedance = 50Ω.
-1.0A
Set time base for 50/100 ns/cm
Fig. 5 Reverse Recovery Time Characteristic and Test Circuit
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