BYT51A - BYT51M FAST RECOVERY RECTIFIER DIODES VOLTAGE RANGE: 50 - 1000V CURRENT: 1.0 A Features · · · · · Glass passivated junction Hermetically sealed package Low reverse current Lead (Pb)-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC B A A Mechanical Data · · · · · · C D Case : DO-15 Molded plastic Epoxy : UL94V-O rate flame retardant Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed Polarity : Color band denotes cathode end Mounting position : Any Weight : 0.465 gram DO-15 Dim Min A 25.40 Max — B 5.50 7.62 C 0.686 0.889 D 2.60 3.60 All Dimensions in mm Maximum Ratings TA = 25C unless otherwise specified Parameter Reverse voltage = Repetitive peak reverse voltage Peak forward surge current Test condition see electrical characteristics tp = 10 ms, half sinewave Repetitive peak forward current Average forward current Symbol Value Unit VR = VRRM 50 V BYT51B VR = VRRM 100 V BYT51D VR = VRRM 200 V BYT51G VR = VRRM 400 V BYT51J VR = VRRM 600 V BYT51K VR = VRRM 800 V BYT51M VR = VRRM 1000 V IFSM 50 A IFRM 9 A A on PC board IFAV 1 l = 10 mm IFAV 1.5 A Tj = Tstg - 55 to + 175 °C ER 20 mJ Junction and storage temperature range Non repetitive reverse avalanche energy Part BYT51A I(BR)R = 1 A 1 of 3 www.sunmate.tw Maximum Thermal Resistance Tamb = 25 °C, unless otherwise specified Parameter Test condition Junction ambient Symbol Value Unit l = 10 mm, TL = constant RthJA 45 K/W on PC board with spacing 25 mm RthJA 100 K/W Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Forward voltage Reverse current Reverse recovery time Symbol Typ. Max Unit 0.95 1.1 V 1.0 V IR 1 µA IR 100 µA trr 4 µs IF = 1 A VF IF = 1 A, Tj = 175 °C VF VR = VRRM VR = VRRM, Tj = 150 °C IF = 0.5 A, IR = 1 A, iR = 0.25 A Min 120 l l 10 100 I F – Forward Current ( A ) RthJA Therm. Resist. Junction/Ambient (K/W) Typical Characteristics (Tamb = 25 °C unless otherwise specified) 80 TL= constant 60 40 20 0 T j = 175°C 0.1 Tj = 2 5°C 0.01 0.001 0 94 9101 1 5 10 15 20 25 30 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 l - Lead Length ( mm ) 16323 Figure 1. Typ. Thermal Resistance vs. Lead Length 2 of 3 V F – Forward Voltage ( V ) Figure 2. Forward Current vs. Forward Voltage www.sunmate.tw R thJA = 45 K/W l = 10 mm 1.4 1.2 1.0 0.8 0.6 RthJA =100 K/W PCB: d = 25 mm 0.4 0.2 0.0 0 20 40 60 V R = VRRM 300 250 150 PR -Limit @80 % VR 100 50 0 25 50 75 100 125 150 175 Tj - Junction Temperature ( °C ) 16326 Figure 3. Max. Average Forward Current vs. Ambient Temperature Figure 5. Max. Reverse Power Dissipation vs. Junction Temperature 1000 CD - Diode Capacitance ( pF ) 45 V R = VRRM I R - Reverse Current ( µA ) PR -Limit @100 % VR 200 80 100 120 140 160 180 Tamb – Ambient Temperature ( °C ) 16324 350 PR - Reverse Power Dissipation ( mW ) I FAV – Average Forward Current ( A ) 1.6 100 10 f =1 MHz 40 35 30 25 20 15 10 5 1 25 16325 50 75 100 125 150 0 0.1 175 Tj – Junction Temperature ( °C ) 16327 Figure 4. Reverse Current vs. Junction Temperature 3 of 3 1 10 100 V R - Reverse Voltage ( V ) Figure 6. Diode Capacitance vs. Reverse Voltage www.sunmate.tw