SUNMATE BYT51A Fast recover y rectifier diode Datasheet

BYT51A - BYT51M
FAST RECOVERY RECTIFIER DIODES
VOLTAGE RANGE: 50 - 1000V
CURRENT: 1.0 A
Features
·
·
·
·
·
Glass passivated junction
Hermetically sealed package
Low reverse current
Lead (Pb)-free component
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
B
A
A
Mechanical Data
·
·
·
·
·
·
C
D
Case : DO-15 Molded plastic
Epoxy : UL94V-O rate flame retardant
Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
Polarity : Color band denotes cathode end
Mounting position : Any
Weight : 0.465 gram
DO-15
Dim
Min
A
25.40
Max
—
B
5.50
7.62
C
0.686
0.889
D
2.60
3.60
All Dimensions in mm
Maximum Ratings TA = 25C unless otherwise specified
Parameter
Reverse voltage = Repetitive
peak reverse voltage
Peak forward surge current
Test condition
see electrical characteristics
tp = 10 ms, half sinewave
Repetitive peak forward current
Average forward current
Symbol
Value
Unit
VR = VRRM
50
V
BYT51B
VR = VRRM
100
V
BYT51D
VR = VRRM
200
V
BYT51G
VR = VRRM
400
V
BYT51J
VR = VRRM
600
V
BYT51K
VR = VRRM
800
V
BYT51M
VR = VRRM
1000
V
IFSM
50
A
IFRM
9
A
A
on PC board
IFAV
1
l = 10 mm
IFAV
1.5
A
Tj = Tstg
- 55 to + 175
°C
ER
20
mJ
Junction and storage
temperature range
Non repetitive reverse
avalanche energy
Part
BYT51A
I(BR)R = 1 A
1 of 3
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Maximum Thermal Resistance
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Junction ambient
Symbol
Value
Unit
l = 10 mm, TL = constant
RthJA
45
K/W
on PC board with spacing
25 mm
RthJA
100
K/W
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Forward voltage
Reverse current
Reverse recovery time
Symbol
Typ.
Max
Unit
0.95
1.1
V
1.0
V
IR
1
µA
IR
100
µA
trr
4
µs
IF = 1 A
VF
IF = 1 A, Tj = 175 °C
VF
VR = VRRM
VR = VRRM, Tj = 150 °C
IF = 0.5 A, IR = 1 A, iR = 0.25 A
Min
120
l
l
10
100
I F – Forward Current ( A )
RthJA Therm. Resist. Junction/Ambient (K/W)
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
80
TL= constant
60
40
20
0
T j = 175°C
0.1
Tj = 2 5°C
0.01
0.001
0
94 9101
1
5
10
15
20
25
30
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
l - Lead Length ( mm )
16323
Figure 1. Typ. Thermal Resistance vs. Lead Length
2 of 3
V F – Forward Voltage ( V )
Figure 2. Forward Current vs. Forward Voltage
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R thJA = 45 K/W
l = 10 mm
1.4
1.2
1.0
0.8
0.6
RthJA =100 K/W
PCB: d = 25 mm
0.4
0.2
0.0
0
20
40
60
V R = VRRM
300
250
150
PR -Limit
@80 % VR
100
50
0
25
50
75
100
125
150
175
Tj - Junction Temperature ( °C )
16326
Figure 3. Max. Average Forward Current vs. Ambient Temperature
Figure 5. Max. Reverse Power Dissipation vs. Junction
Temperature
1000
CD - Diode Capacitance ( pF )
45
V R = VRRM
I R - Reverse Current ( µA )
PR -Limit
@100 % VR
200
80 100 120 140 160 180
Tamb – Ambient Temperature ( °C )
16324
350
PR - Reverse Power Dissipation ( mW )
I FAV – Average Forward Current ( A )
1.6
100
10
f =1 MHz
40
35
30
25
20
15
10
5
1
25
16325
50
75
100
125
150
0
0.1
175
Tj – Junction Temperature ( °C )
16327
Figure 4. Reverse Current vs. Junction Temperature
3 of 3
1
10
100
V R - Reverse Voltage ( V )
Figure 6. Diode Capacitance vs. Reverse Voltage
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