ASI ASAT10 Npn silicon rf power transistor Datasheet

ASAT10
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI ASAT10 is Designed for
PACKAGE STYLE .250 2L FLG(A)
A
.020 x 45°
Ø .130 NOM.
FEATURES:
.050 x 45°
• Input Matching Network
•
• Omnigold™ Metalization System
D C
L
B
M
E
F
G
H
MAXIMUM RATINGS
2.3 A
IC
J
I
K
MAXIMUM
DIM
MINIMUM
inches / mm
inches / mm
A
.055 / 1.40
.065 / 1.65
VCBO
45 V
VCEO
15 V
C
.243 / 6.17
.253 / 6.43
D
.635 / 16.13
.665 / 16.89
VEBO
3.5 V
E
.555 / 14.10
.565 / 14.35
F
.739 / 18.77
.749 / 19.02
G
.315 / 8.00
.325 / 8.26
H
.002 / 0.05
.006 / 0.15
I
.055 / 1.40
.065 / 1.65
-65 C to +200 C
J
.075 / 1.91
.095 / 2.41
TSTG
-65 OC to +150 OC
L
θ JC
6.0 OC/W
.124 / 3.15
B
PDISS
O
29 W @ TC = 25 C
O
TJ
O
CHARACTERISTICS
SYMBOL
.190 / 4.83
K
.245 / 6.22
.255 / 6.48
.092 / 2.34
M
ORDER CODE: ASI10517
O
TC = 25 C
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
UNITS
BVCBO
IC = 3.0 mA
45
V
BVCEO
IC = 3.0 mA
12
V
BVEBO
IE = 3.0 mA
3.5
V
hFE
VCE = 5.0 V
COB
VCB = 28 V
PG
ηC
VCC = 28 V
IC = 600 mA
15
f = 1.0 MHz
POUT = 10 W
f = 1.65 GHz
11
45
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
150
---
7.0
pF
dB
%
REV. A
1/1
Similar pages