NTE NTE374 Silicon complementary transistors audio amplifier, driver Datasheet

NTE373 (NPN) & NTE374 (PNP)
Silicon Complementary Transistors
Audio Amplifier, Driver
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A
Collector Power Dissipation, PD
TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W
TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Collector–Base Breakdown Voltage
Symbol
Test Conditions
V(BR)CBO IC = 1mA, IE = 0
Collector–Emitter Breakdown Voltage V(BR)CEO IC = 10mA, RBE = ∞
Emitter–Base Breakdown Voltage
V(BR)EBO IE = 1mA, IC = 0
Min
Typ
Max
Unit
180
–
–
V
160
–
–
V
5
–
–
V
µA
Collector Cutoff Current
ICBO
VCB = 160V, IE = 0
–
–
10
DC Current Gain
hFE1
VCE = 5V, IC = 150mA
60
–
200
hFE2
VCE = 5V, IC = 500mA
30
–
–
VCE(sat)
IC = 500mA, IB = 50mA
–
–
1
V
Base–Emitter Voltage
VBE
VCE = 5V, IC = 150mA
–
–
1.5
V
Transistion Frequency
fT
VCE = 5V, IC = 500mA
–
140
–
MHz
VCB = 10V, IE = 0, f = 1MHz
–
14
–
pF
Collector–Emitter Saturation Voltage
Collector Output Capacitance
Cob
.330 (8.38) Max
.175
(4.45)
Max
.450
(11.4)
Max
.118
(3.0)
Dia
.655
(16.6)
Max
.030 (.762) Dia
E
C
B
.090 (2.28)
.130 (3.3)
Max
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