Chip Varistors Countermeasure for surge voltage and static electricity AVR series Type: AVR-M AVRL Issue date: August 2013 • All specifications are subject to change without notice. • Conformity to RoHS Directive: This means that, in conformity with EU Directive 2002/95/EC, lead, cadmium, mercury, hexavalent chromium, and specific bromine-based flame retardants, PBB and PBDE, have not been used, except for exempted applications. (2/11) Conformity to RoHS Directive Varistors(SMD) Countermeasure for Surge Voltage and Static Electricity AVR Series AVR-M, AVRL Types Varistors are voltage dependent nonlinear resistive elements with a resistance that decreases rapidly when the voltage is over the constant value. Varistor is equivalent with Zener diode of two series connection. Therefore, do not have polarity. CURRENT vs. VOLTAGE CHARACTERISTICS EQUIVALENT CIRCUIT 2 Zener Diodes Current(A) 10–1 10–2 Zener diode /Vz:6.8V Positive direction 10–3 Chip varistor /V1mA:12V 10–4 A capacitance content 10–5 –18 –14 –10 –6 –2 2 –10–5 6 10 14 18 –10–4 –10–3 Negative direction –10–2 –10–1 Voltage(V) THE EFFECT OF THE VARISTOR WITHOUT VARISTOR A malfunction and failure of electronic equipment ESD, Surge voltage ESD, Surge voltage Power line Signal line WITH VARISTOR Suppress abnormal voltage by inserting varistor in a circuit IC Power line Signal line IC Insert a varistor between a line and ground : Chip varistor • All specifications are subject to change without notice. 002-01 / 20130821 / e9c11_avr.fm (3/11) FEATURES • No polarity, due to symmetrical current-voltage characteristics. Equivalent to anode common type Zener diode. • Excellent electrostatic absorption capability. Response is as good or better than Zener diode. Keeps symmetrical current-voltage characteristics even after electrostatic absorption. • Adopted the inner electrodes lamination structure. Wide range of varistor voltages are available in series (6.8 to 39V). Low capacitance items are available in series (1.1pF to). World’s smallest 0402-, 0603-, 1005-, 1608-, 2012-chip types are available in series. • Excellent mount reliability. Good for Pb-free soldering. Adopted (Ni/Sn) electroplating. Achieved good solderability and solder heat resistance. • Can replace a Zener diode + capacitor combination. Reduced footprint and total mounting cost. INTERNAL STRUCTURE Inner electrode Varistor body (Palladium) (Zinc Oxide: ZnO semiconductor ceramics) Sn plating Ag termination underlayer Ni plating CIRCUITS SYMBOL OPERATIONAL VOLTAGE RANGES 0402 type 25 25 0603 type 19 1005 type APPLICATIONS • Electrostatic absorption • Pulse noise absorption 28 1608 type 2012 type 0 28 5 10 15 20 Circuit voltage(V) 25 30 TEMPERATURE RANGES Type Operating Storage AVR-M1005/1608/2012 –40 to +125°C –40 to +125°C AVR-M0402/0603/AVRL –40 to +85°C –40 to +85°C APPLICATION EXAMPLES Consumer product Mobile phone Digital video camera Digital camera PDA Note PC DVD-ROM, CD-ROM CD/MD/MP3 player Game machine In-car equipment Application Data terminal LCD panel Touch panel Button and switch unit Battery terminal Audio-Video input-output terminal Microphone/receiver unit Controller unit CAN-BUS ECU Connector Air conditioner panel Car audio Car navigation RECOMMENDED REFLOW SOLDERING CONDITIONS Tpeak Tmelt Tpre peak tmelt tpre Time (s) Item Tpre Tmelt Tpeak tpre tmelt Preheating temperature Solder melting temperature Peak temperature Preheating time Time more than solder melting temperature The number of times of reflow possible Specification For eutectic solder 160 to 180°C 200°C 240°C max. 100s max. For lead-free solder 150 to 180°C 230°C 260°C max. 120s max. 30s max. 40s max. 2 max. 2 max. • All specifications are subject to change without notice. 002-01 / 20130821 / e9c11_avr.fm (4/11) AVR-M TYPE PRODUCT IDENTIFICATION SHAPES AND DIMENSIONS 0402/0603/1005/1608/2012 TYPES AVR-M 1005 C 270 M T AAB (1) (2) (3) (4) (5) (6) (7) W AVRM 1005 C 6R8 N T 101 N (1) (2) (3) (4) (5) (6) (7) (8) L B T (1) Series name (2) Dimensions LW 0402 0603 1005 1608 2012 Dimensions in mm 0.40.2mm 0.60.3mm 1.00.5mm 1.60.8mm 2.01.2mm (3) Structure code Type L W T B min. 0402 0603 1005 1608 2012 0.4±0.02 0.6±0.03 1.0±0.05 1.6±0.1 2.0±0.2 0.2±0.02 0.3±0.03 0.5±0.05 0.8±0.1 1.25±0.2 0.2±0.02 0.3±0.03 0.5±0.05 0.8±0.1 1.0±0.2 0.07 0.1 0.1 0.2 0.2 Weight (mg)typ. 0.1 0.2 1.2 5 15 RECOMMENDED PC BOARD PATTERN (4) Varistor voltage 27100V (5) Varistor voltage tolerance K M N ±10% ±20% ±30% (6) Packaging style T Taping c 270 b a b Dimensions in mm Type 0402 0603 1005 1608 2012 a 0.2 0.25 to 0.35 0.3 to 0.5 0.6 to 0.8 0.9 to 1.2 b 0.15 to 0.2 0.2 to 0.3 0.35 to 0.45 0.6 to 0.8 0.7 to 0.9 c 0.18 to 0.2 0.25 to 0.35 0.4 to 0.6 0.6 to 0.8 0.9 to 1.2 (7) Capacitance and TDK internal code (5) Capacitance tolerance N ±30% • All specifications are subject to change without notice. 002-01 / 20130821 / e9c11_avr.fm (5/11) ELECTRICAL CHARACTERISTICS Maximum Clamping energy voltage E(Joule) Vcl(V) [10/1000µs] [8/20µs] max. Maximum peak current Ip(A) [8/20µs] max. Maximum continuous voltage (Rated voltage) Clamping voltage Maximum energy Maximum peak current Capacitance Packaging quantities (Taping) (pieces/reel) (4.76 to 8.84) 3.5 (9.6 to 14.4) 5.5 15[1A] 20[1A] 0.01 0.005 4 1 100 (70 to 130) 33 (23.1 to 43.9) 6.8 6.8 8 12.8 12 12.8 20 (4.76 to 8.84) (4.76 to 8.84) (6.4 to 9.6) (10 to 15.6) (9.6 to 14.4) (10 to 15.6) (16.0 to 24.0) 3.5 3.5 5.5 5.5 7.5 5.5 12 14[1A] 14[1A] 17[1A] 20[1A] 23[1A] 35[1A] 40[1A] 0.02 0.01 0.01 0.01 0.01 0.003 0.01 16 10 4 5 1 1 1 330 (231 to 429) 100 (70 to 130) 100 (70 to 130) 100 (70 to 130) 15,000 33 15 (10.5 to 19.5) 15 (10.5 to 19.5) [1MHz] 6.8 6.8 8 8 8 8 12 12 18 27 27 27 (4.76 to 8.84) (4.76 to 8.84) (6.4 to 9.6) (6.4 to 9.6) (6.4 to 9.6) (6.4 to 9.6) (9.6 to 14.4) (9.6 to 14.4) (14.4 to 21.6) (24 to 30) (21.6 to 32.4) (21.6 to 32.4) 3.5 3.5 5.5 5.5 5.5 5.5 7.5 7.5 11 19 15 15 15[1A] 14[1A] 14[1A] 14[1A] 15[1A] 19[1A] 21[1A] 20[1A] 30[1A] 44[1A] 57[1A] 59[1A] 0.008 0.02 0.04 0.04 0.02 0.01 0.01 0.05 0.06 0.06 0.06 0.05 24 10 25 25 3 1 24 10 16 4 4 1 330 (231 to 429) 100 (70 to 130) 650 480 100 33 460 [1MHz] 130 120 [1MHz] 100 (70 to 130) 40 15 10,000 8 12 12 18 22 22 27 27 27 27 27 27 39 (6.4 to 9.6) (9.6 to 14.4) (9.6 to 14.4) (14.4 to 21.6) (19.8 to 24.2) (19.8 to 24.2) (24 to 30) (24 to 30) (24 to 30) (24 to 30) (21.6 to 32.4) (21.6 to 32.4) (35 to 43) 5.5 7.5 7.5 11 16 16 19 19 19 19 17 17 28 15[2A] 20[2A] 20[2A] 30[2A] 34[2A] 37[2A] 42[2A] 42[2A] 54[2A] 53[2A] 52[2A] 52[2A] 69[2A] 0.09 0.09 0.06 0.1 0.1 0.03 0.1 0.1 0.05 0.02 0.05 0.05 0.1 30 50 15 30 30 10 48 20 10 28 2 2 78 650 1050 400 600 560 210 430 160 60 80 (64 to 96) 30 15 270 (189 to 351) 4,000 12 22 39 (9.6 to 14.4) 7.5 (19.8 to 24.2) 16 (35 to 43) 28 20[5A] 38[5A] 62[5A] 0.2 0.3 0.3 60 100 100 1000 800 430 2,000 1 TERMINOLOGY Item Varistor voltage (Breakdown voltage) Capacitance C(pF) [1kHz, 1Vrms] typ. 6.8 12 Unit V1mA (V) Terminology Voltage measured across the varistor when DC1mA is applied. Maximum DC voltage that can be applied continuously. Vdc Varistor leakage current: 50µA max. (V) (Within the range of maximum allowable circuit voltage) Voltage appearing across the varistor Vcl when a pulse current (8/20µs1) of (V) specified peak value is applied. Maximum energy that can be absorbed E without deteriorating varistor (Joule) characteristics when an impulse (10/1000µs2) is applied once. Maximum current that can be withstood Ip without deteriorating varistor (A) characteristics when an impulse current (8/20µs1) is applied once. Capacitance measured at 1kHz C (or 1MHz) of oscillator frequency and (pF) 1Vrms of oscillator voltage. 20,000 8/20µs test waveform 100% 90% Current 0402 type AVRM0402C6R8NT101N AVRM0402C120MT330N 0603 type AVRM0603C6R8NT331N AVRM0603C6R8NT101N AVRM0603C080MT101N AVRM0603C120MT101N AVR-M0603C120MTAAB AVRM0603C120MT150N AVRM0603C200MT150N 1005 type AVRM1005C6R8NT331N AVRM1005C6R8NT101N AVR-M1005C080MTAAB AVR-M1005C080MTADB AVR-M1005C080MTABB AVR-M1005C080MTACB AVR-M1005C120MTACC AVR-M1005C120MTAAB AVR-M1005C180MTAAB AVRM1005C270KT101N AVR-M1005C270MTAAB AVR-M1005C270MTABB 1608 type AVR-M1608C080MTAAB AVR-M1608C120MT6AB AVR-M1608C120MT2AB AVR-M1608C180MT6AB AVR-M1608C220KT6AB AVR-M1608C220KT2AB AVR-M1608C270KT6AB AVR-M1608C270KT2AB AVR-M1608C270KTACB AVRM1608C270KT800M AVR-M1608C270MTAAB AVR-M1608C270MTABB AVRM1608C390KT271N 2012 type AVR-M2012C120MT6AB AVR-M2012C220KT6AB AVR-M2012C390KT6AB Maximum continuous voltage (Rated voltage) Vdc(V) max. 50% 8µs 20µs Time 2 10/1000µs test waveform 100% 90% Energy Part No. Varistor voltage (Breakdown voltage) V1mA(V)[DC1mA] 50% 10µs 1000µs Time • All specifications are subject to change without notice. 002-01 / 20130821 / e9c11_avr.fm (6/11) AVRL TYPE PRODUCT IDENTIFICATION SHAPES AND DIMENSIONS AVRL 10 1A 3R3 F T A (1) (2) (3) (4) (5) (6) (7) W L (1) Series name (2) Dimensions LW B 0.40.2mm 0.60.3mm 1.00.5mm 1.60.8mm T 04 06 10 16 Dimensions in mm (3) Maximum continuous voltage 1A 1C 1E 10Vdc 16Vdc 25Vdc (4) Capacitance 1.1pF 2.2pF 3.3pF 6.8pF T B min. 0402 0603 1005 1608 0.4±0.02 0.6±0.03 1.0±0.05 1.6±0.1 0.2±0.02 0.3±0.03 0.5±0.05 0.8±0.1 0.2±0.02 0.3±0.03 0.5±0.05 0.8±0.1 0.07 0.1 0.1 0.2 b ±0.3pF ±0.5pF ±1pF ±2pF Weight (mg)typ. 0.1 0.2 1.2 5 a b Dimensions in mm Type 0402 0603 1005 1608 a 0.2 0.25 to 0.35 0.3 to 0.5 0.6 to 0.8 Capacitance C(pF) [1MHz, 1Vrms] Maximum continuous voltage (Rated voltage) Vdc(V) max. Insulation resistance Rdc(M) [3Vrms] min. Varistor voltage V1mA(V)[DC1mA] typ. Packaging quantities (Taping) (pieces/reel) 1.1[0.8 to 1.4] 25 10 39 20,000 1.1[0.8 to 1.4] 25 10 39 15,000 1.1[0.8 to 1.4] 1.1[0.8 to 1.4] 2.2[1.7 to 2.7] 3.3[2.3 to 4.3] 6.8[4.8 to 8.8] 10 10 16 10 10 10 10 10 10 10 90 39 90 27 27 10,000 1.1[0.8 to 1.4] 1.1[0.8 to 1.4] 3.3[2.3 to 4.3] 6.8[4.8 to 8.8] 10 10 10 10 10 10 10 10 90 39 27 27 4,000 (6) Packaging style T W RECOMMENDED PC BOARD PATTERN (5) Capacitance tolerance N D F G L c 1R1 2R2 3R3 6R8 Type Taping b 0.15 to 0.2 0.2 to 0.3 0.35 to 0.45 0.6 to 0.8 c 0.18 to 0.2 0.25 to 0.35 0.4 to 0.6 0.6 to 0.8 (7) Varistor voltage and TDK internal code ELECTRICAL CHARACTERISTICS Part No. 0402 type AVRL041E1R1NTA 0603 type AVRL061E1R1NTA 1005 type AVRL101A1R1NTA AVRL101A1R1NTB AVRL101C2R2DTA AVRL101A3R3FTA AVRL101A6R8GTA 1608 type AVRL161A1R1NTA AVRL161A1R1NTB AVRL161A3R3FTA AVRL161A6R8GTA TERMINOLOGY Item Capacitance Maximum continuous voltage (Rated voltage) Insulation resistance Varistor voltage (Breakdown voltage) Unit C (pF) Vdc (V) Rdc (M ) V1mA (V) Terminology Capacitance measured at 1MHz of oscillator frequency and 1Vrms of oscillator voltage. Maximum DC voltage that can be applied continuously. Varistor leakage current: 50µA max. (Within the range of maximum allowable circuit voltage) Insulation resistance appearing across the varistor when specified voltage is applied. Voltage measured across the varistor when DC1mA is applied. • All specifications are subject to change without notice. 002-01 / 20130821 / e9c11_avr.fm (7/11) TYPICAL ELECTRICAL CHARACTERISTICS CURRENT vs. VOLTAGE CHARACTERISTICS IMPEDANCE vs. FREQUENCY CHARACTERISTICS 10000 100 15pF 6.8pF 3.3pF V1mA:12V 10–1 1000 30pF V1mA:8V Impeadance(Ω) Current(A) 10–2 V1mA:27V V1mA:22V 10–3 V1mA:18V 10–4 100 10 1 10–5 1050pF 10–6 10–7 0 10 20 Voltage(V) 30 0.01 1 40 TRANSMISSION CHARACTERISTICS 10 100 Frequency(MHz) 1000 10000 CAPACITANCE vs. FREQUENCY CHARACTERISTICS 10 10000 1050pF 0 3.3pF 6.8pF 30pF –20 15pF 160pF 1050pF 650pF –30 650pF 400pF 1000 Capacitance(pF) –10 Insertion loss(dB) 160pF 400pF 650pF 0.1 400pF 160pF 100 30pF 15pF 6.8pF –40 10 3.3pF –50 –60 1 10 100 Frequency(MHz) 1000 10000 1 1 10 100 Frequency(MHz) 1000 10000 • All specifications are subject to change without notice. 002-01 / 20130821 / e9c11_avr.fm (8/11) ELECTROSTATIC DISCHARGE TESTS TEST CONDITIONS 150pF, 330 contact discharge Charged voltage /8kV, 0.1s interval MEASURING CIRCUIT 10MΩ 330Ω High voltage DC power supply Discharge gun Test sample 150pF ESD simulator ESD simulator AVR-M1005 TYPE 20 20 10 10 ΔV1mA/V1mA(%) ΔV1mA/V1mA(%) AVR-M0603 TYPE 0 –10 –20 –30 –40 –50 –60 0.1 –20 –30 –40 –50 1 10 Number of discharge(Times) –60 0.1 100 AVR-M1608 TYPE 20 8 10 7 0 –10 –20 –30 –40 –50 –60 0.1 1 10 Number of discharge(Times) 1 10 Number of discharge(Times) 100 AVRL101A3R3F Capacitance(pF) [1MHz] ΔV1mA/V1mA(%) 0 –10 100 6 5 4 3 2 1 0 0.1 1 10 Number of discharge(Times) 100 • All specifications are subject to change without notice. 002-01 / 20130821 / e9c11_avr.fm (9/11) ELECTROSTATIC ABSORPTION CHARACTERISTICS DISCHARGE CURRENT WAVEFORM WAVEFORM PARAMETERS [IEC61000-4-2] 8 Discharge current(A) 6 ESD Charge voltage (kV) 2 4 6 8 Test level 150pF, 330Ω, Contact discharge, Test level 1 7 1 2 3 4 5 4 3 First peak current of discharge (A) 7.5 15 22.5 30 Rise time (ns) 0.7 to 1.0 0.7 to 1.0 0.7 to 1.0 0.7 to 1.0 2 1 MEASURING CIRCUIT 0 –1 –50 0 50 100 150 Time(ns) 200 250 10MΩ 300 High voltage DC power supply DISCHARGE VOLTAGE WAVEFORM 150pF ESD simulator 350 Open waveform 300 Discharge gun AVR-M1005C120MTAAB / V1mA:12V 250 Voltage(V) 330Ω 200 Test sample AVR-M1005C080MTAAB / V1mA:8V 150 60dB attenuator Zener diode /Vz:6.2V ESD simulator 100 50 0 –50 –50 0 50 100 150 Time(ns) 200 250 50Ω Oscilloscope I/O impedance: 50Ω Frequency range: DC to 18GHz 300 ESD ABSORPTION CHARACTERISTICS COMPARISON OF VARIOUS ELEMENTS Clamping voltage (V) 350 300 250 269V down 258V down 271V down 200 150 100 101V down 50 0 Open waveform 93V down 96V down AVR-M1005C080MTAAB AVR-M1005C120MTAAB Zener diode/Vz:6.2V Peak 316 45 58 47 Average 117 16 24 21 (voltage) Peak voltage:Peak voltage of standing up part Average voltage : Average voltage of 30 to 100ns Peak voltage ESD (Electro Static Discharge) absorption characteristics of V1mA-8V is superior to Vz-6.2V Zener diode. Average voltage 30 100 (ns) • All specifications are subject to change without notice. 002-01 / 20130821 / e9c11_avr.fm (10/11) MERITS OF REPLACEMENT FROM ZENER DIODE (1) Reduction in the number of parts REDUCTION EXAMPLES Zener diode+capacitor Chip varistor APPLICATION EXAMPLES SMART PHONE To LCD driver Microphone/Receiver LCD panel Button Data terminal EXAMPLE OF REPLACEMENT AT AUDIO TERMINAL : Chip varistor Audio connector Audio/out Audio AMP AUDIO/VIDEO Monitor OUT Audio connector Audio/out Audio AMP Video1 in Video2 in Video3 in Video5 in Digi Video Video Video Video L L/MONO L/MONO L/MONO L/MONO Audio Audio Audio Audio Audio R : Chip varistor Insulation resistance of tested circuit(Ω) (2) Improved electrostatic absorption capability COMPARE DATA OF CHIP VARISTOR AND ZENER DIODE ABOUT IC PROTECTION : Chip varistor 10–7 AVR-M1608C120MT6AB 10–6 10–5 With Zener Diode 10–4 10–3 0 2 4 6 8 10 ESD voltage(kV) 12 14 CMOS: D74HC04C ESD generator : Noise Laboratory Co.,Ltd., ESS -630A 200pF-0Ω method model equipment Contact type discharge ESD applied point: Vcc-ground • All specifications are subject to change without notice. 002-01 / 20130821 / e9c11_avr.fm (11/11) APPLICATION EXAMPLES USB 2.0 VDD USB cable USB IC D– D+ USB connector F.G. : Chip varistor MEASURING CIRCUIT Sample IC USB2.0 board on PC Test board Test set : Chip varistor WITHOUT VARISTOR WITH VARISTOR AVRL101A3R3FTA (3.3pF) AVRL101A6R8GTA (6.8pF) • All specifications are subject to change without notice. 002-01 / 20130821 / e9c11_avr.fm