ON NJVNJD35N04G Npn darlington power transistor Datasheet

NJD35N04G,
NJVNJD35N04G,
NJVNJD35N04T4G
NPN Darlington Power
Transistor
This high voltage power Darlington has been specifically designed
for inductive applications such as Electronic Ignition, Switching
Regulators and Motor Control.
Features
 Exceptional Safe Operating Area
 High VCE; High Current Gain
 NJV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These are Pb−Free Devices*
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DARLINGTON
POWER TRANSISTORS
4 AMPERES
350 VOLTS
45 WATTS
Benefits
 Reliable Performance at Higher Powers
 Designed for Inductive Loads
 Very Low Current Requirements
DPAK
CASE 369C
STYLE 1
Applications





MARKING DIAGRAM
Internal Combustion Engine Ignition Control
Switching Regulators
Motor Controls
Light Ballast
Photo Flash
YWW
NJD
35N04G
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Sustaining Voltage
VCEO
350
Vdc
Collector−Base Breakdown Voltage
VCBO
700
Vdc
Collector−Emitter Breakdown Voltage
VCES
700
Vdc
Emitter−Base Voltage
VEBO
5.0
Vdc
IC
ICM
4.0
8.0
Base Current
IB
0.5
Adc
Total Power Dissipation
@ TC = 25C
Derate above 25C
PD
45
0.36
W
W/C
−65 to +150
C
Collector Current
Continuous
Peak
Operating and Storage Junction
Temperature Range
TJ, Tstg
Y
= Year
WW
= Work Week
NJD35N04 = Device Code
G
= Pb−Free Device
ORDERING INFORMATION
Package
Shipping†
NJD35N04G
DPAK
(Pb−Free)
75 Units / Rail
NJVNJD35N04G
DPAK
(Pb−Free)
75 Units / Rail
NJD35N04T4G
DPAK
(Pb−Free)
2,500 /
Tape & Reel
NJVNJD35N04T4G
DPAK
(Pb−Free)
2,500 /
Tape & Reel
Device
Adc
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
 Semiconductor Components Industries, LLC, 2012
February, 2012 − Rev. 5
1
Publication Order Number:
NJD35N04/D
NJD35N04G, NJVNJD35N04G, NJVNJD35N04T4G
THERMAL CHARACTERISTICS
Characteristic
Symbol
Thermal Resistance
Junction−to−Case
Junction−to−Ambient
Value
Unit
C/W
2.78
71.4
RqJC
RqJA
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
Symbol
Characteristic
Min
Typ
Max
350
−
−
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
(IC = 10 mA, L = 10 mH)
VCEO(sus)
V
Collector Cutoff Current (VCE = 500 V)
(IB = 0) (VCE = 500 V, TC = 125C)
ICES
−
−
−
−
50
250
mA
Collector Cutoff Current (VCE = 250 V)
(IB = 0) (VCE = 200 V, TC = 125C)
ICEO
−
−
−
−
50
250
mA
Emitter Cutoff Current (VBE = 5.0 Vdc)
IEBO
−
−
5.0
mA
−
−
−
−
1.5
1.5
−
−
−
−
2.0
2.0
−
−
−
−
2.0
2.0
2000
300
−
−
90
−
−
−
60
−
−
−
18
0.8
−
−
ON CHARACTERISTICS
Collector−Emitter Saturation Voltage
(IC = 2.0 A, IB = 20 mA)
(IC = 2.0 A, IB = 20 mA 125C)
VCE(sat)
Base−Emitter Saturation Voltage
(IC = 2.0 A, IB = 20 mA)
(IC = 2.0 A, IB = 20 mA 125C)
VBE(sat)
Base−Emitter On Voltage
(IC = 2.0 A, VCE = 2.0 V)
(IC = 2.0 A, VCE = 2.0 V 125C)
VBE(on)
DC Current Gain
(IC = 2.0 A, VCE = 2.0 V)
(IC = 4.0 A, VCE = 2.0 Vdc)
hFE
−
V
V
V
−
−
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = 2.0 A, VCE = 10 V, f = 1.0 MHz)
fT
Output Capacitance
(VCB = 10 V, IE = 0, f = 0.1 MHz)
Cob
MHz
pF
SWITCHING CHARACTERISTICS
VCC = 12 V, Vclamp = 250 V, L = 4 mH
IC = 2 A, IB1 = 20 mA, IB2 = −20 mA
ts
tf
C
B
E
2 KW
Figure 1. Darlington Circuit Schematic
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2
mSec
NJD35N04G, NJVNJD35N04G, NJVNJD35N04T4G
TYPICAL CHARACTERISTICS
10,000
45
hFE, DC CURRENT GAIN
40
35
30
TC
25
20
15
10
1000
25C
100
VCE = 2 V
5.0
0
10
10
30
50
70
90
110
130
150
170
Figure 3. DC Current Gain
Ic/Ib = 100
2.5
2.0
1.5
0.5
0
25C
125C
0.1
10
Figure 2. Power Derating
3.0
1.0
1.0
IC, COLLECTOR CURRENT (AMPS)
VBE(sat), BASE−EMITTER SATURATION
VOLTAGE (V)
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
3.5
0.1
T, TEMPERATURE (C)
4.0
VBE(on), BASE−EMITTER VOLTAGE (V)
125C
1.0
10
2.4
2.0
1.6
25C
1.2
125C
0.8
0.4
0
Ic/Ib = 100
0.1
1.0
10
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
Figure 4. Collector−Emitter Saturation Voltage
Figure 5. Base−Emitter Saturation Voltage
10
2.0
IC, COLLECTOR CURRENT (A)
PD, POWER DISSIPATION (W)
50
1.6
25C
1.2
0.8
125C
VCE = 2 V
0.4
0.1
1.0
10
10 mS
DC
1.0
1 mS
300 mS
100 mS
0.1
0.01
10
100
1000
IC, COLLECTOR CURRENT (AMPS)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 6. Base−Emitter Voltage
Figure 7. Forward Bias Safe Operating Area
(FBSOA)
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3
NJD35N04G, NJVNJD35N04G, NJVNJD35N04T4G
PACKAGE DIMENSIONS
DPAK
CASE 369C−01
ISSUE D
A
E
b3
c2
B
Z
D
1
L4
A
4
L3
b2
e
2
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
C
H
DETAIL A
3
c
b
0.005 (0.13)
M
H
C
L2
GAUGE
PLANE
C
L
SEATING
PLANE
A1
L1
DETAIL A
ROTATED 905 CW
2.58
0.101
5.80
0.228
3.0
0.118
1.6
0.063
INCHES
MIN
MAX
0.086 0.094
0.000 0.005
0.025 0.035
0.030 0.045
0.180 0.215
0.018 0.024
0.018 0.024
0.235 0.245
0.250 0.265
0.090 BSC
0.370 0.410
0.055 0.070
0.108 REF
0.020 BSC
0.035 0.050
−−− 0.040
0.155
−−−
MILLIMETERS
MIN
MAX
2.18
2.38
0.00
0.13
0.63
0.89
0.76
1.14
4.57
5.46
0.46
0.61
0.46
0.61
5.97
6.22
6.35
6.73
2.29 BSC
9.40 10.41
1.40
1.78
2.74 REF
0.51 BSC
0.89
1.27
−−−
1.01
3.93
−−−
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
SOLDERING FOOTPRINT*
6.20
0.244
DIM
A
A1
b
b2
b3
c
c2
D
E
e
H
L
L1
L2
L3
L4
Z
6.172
0.243
SCALE 3:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
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NJD35N04/D