RoHS BC337/338 BC337,-16,-25,-40 TRANSISTOR (NPN) BC338, -16,-25,-40 FEATURES Power dissipation PCM: 0.625 W (Tamb=25℃) 1. COLLECTOR Collector current ICM: 0.8 A Collector-base voltage VCBO: BC337 50 V BC338 30 V Operating and storage junction temperature range 2. BASE CHARACTERISTICS (Tamb=25℃ Parameter Symbol Collector-base breakdown voltage VCBO Test O MIN N TYP MAX UNIT 50 V 30 V 45 V 25 V 5 V IC= 10 mA , IB=0 R T VCEO BC338 Emitter-base breakdown voltage VEBO Collector cut-off current ICBO C E L BC337 conditions Ic= 100µA, IE=0 BC338 BC337 IC C O unless otherwise specified) BC337 Collector-emitter breakdown voltage 1 2 3 3. EMITTER TJ, Tstg: -55℃ to +150℃ ELECTRICAL D T ,. L TO-92 IE= 10µA, IC=0 VCB= 45 V, IE=0 0.1 µA VCB= 25V, IE=0 0.1 µA VCE= 40 V, IB=0 0.2 µA VCE= 20 V, IB=0 0.2 µA IEBO VEB= 4 V, IC=0 0.1 µA hFE(1) VCE=1V, IC= 100mA HFE(2) VCE=1V, IC= 300mA Collector-emitter saturation voltage VCE(sat) IC=500 mA, IB= 50 mA 0.7 V Base-emitter saturation voltage VBE(sat) IC= 500 mA, IB=50 mA 1.2 V BC338 Collector cut-off current E Emitter cut-off current J E DC current gain W BC337 ICEO BC338 BC337/BC338 BC337-16/BC338-16 BC337-25/BC338-25 BC337-40/BC338-40 100 100 160 250 630 250 400 630 60 VCE= 5V, IC= 10mA Transition frequency fT 210 MHz f = 100MHz WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected]