PHILIPS BCV61B Low vcesat (biss) transistor Datasheet

Automotive small-signal
discretes solutions
Drive the future with our innovative portfolio
Automotive
Simplifying design through increased functionality
By delivering more functionality from individual products, we help to
cut development times. With just a few small-signal discretes several
circuit blocks can be build and therewith the number of different
components on the bill-of-materials can be reduced significantly.
Our small-signal discretes portfolio offers power and performance
levels previously only associated with much larger packages allowing
you to replace medium-power products with more compact
alternatives. And because you can now get high-performance
transistors and diodes in low-cost small-signal packages, you can
significantly cut costs. Whether it’s superior ESD protection or
loadswitch functionality integrated into a single component,
our portfolio makes it easier to design a new system.
2
small-signal discretes solutions
As automotive manufacturers strive to enhance safety, performance, comfort and
fuel-efficiency levels, the semiconductor content of vehicles is rising and electronic
systems are becoming more complex. Consequently, system suppliers must meet
increasingly severe requirements. Building on our expertise in both automotive
and small-signal discretes solutions, Philips offers an extensive portfolio of discrete
components that help suppliers meet the rigorous and diverse technical demands
on automotive electronics. The wide portfolio enables automotive designers to be
flexible in their designs. By means of integrated products the component count is
decreased and thus costs can be reduced.
All our new products are released in the well-known SOT23 package,
as well as in smaller packages like SOT323 (SC-70), SOD323 (SC-76)
and SOD323F (SC-90). To support the trend towards integration also
multiple transistors and diodes are available integrated into just a
single package like SOT457 (SC-74) and SOT363 (SC-88).
Philips has all the technologies in place to lead the way in small-signal
discretes products, allowing to develop automotive applications that
will drive the future.
Key families
- Low VCEsat (BISS) transistors
- Resistor-equipped transistors (RETs)
- Complex discretes
• BISS Loadswitches
• Matched pair transistors
• MOSFET drivers
- Low VF (MEGA) Schottky rectifiers
- ESD protection diodes
Key benefits
- More power
- Lower costs
- More functionality
- Improved reliability
- Automotive packages
3
Low VCEsat (BISS) transistors
VCC
These Breakthrough In Small-Signal (BISS) transistors offer best-in-class
CONTROLLER
efficiency, therefore getting the heat out of your applications. These cost-effective
alternatives to medium-power transistors deliver 1 – 5 A capability in SOT223
MSD923
(SC-73), SOT89 (SC-62), SOT23 or SOT457 (SC-74).
Key features
- Reduced thermal and electrical resistance
- Up to 5 A collector current capability IC
- Up to 10 A peak collector current ICM
- High performance to boardspace ratio
- High current gain hFE - even at high IC
- Extensive range of products available
DC/DC converter
Key benefits
- Less heat generation and therefore use at
high ambient temperatures possible
- Cost effective replacement of medium
power transistors
- Increased performance from small-signal
Key applications
- Applications where heat is a concern
(e.g. engine- or dashboard mounted
components)
- High and low side switches, e.g. in control
units
discrete footprints
- Drivers in low supply voltage applications,
e.g. fans, motors
- Inductive load drivers, e.g. relays, buzzers
- MOSFET drivers
Less heat generation with BISS transistors
SOT223: IC = 1.55 A; IB = 0.1 A; PCB FR4 + 1 cm2 Cu
BCP51, Tj = 130°C
PBSS9110Z, Tj = 103°C
SOT223 (SC-73)
Ptot 2000 mW
IC (A)
1.0
VCEO (V)
NPN
PBSS5350Z, Tj= 60°C
SOT89 (SC-62)
Ptot 1300 mW
PNP
NPN
4.0
5.0
4
SOT457 (SC-74)
Ptot 480 mW
PNP
NPN
Ptot 750 mW
PNP
PBSS4130T
PBSS5130T
40
PBSS4140T
PBSS5140T
60
PBSS4160T
PBSS5160T
PBSS8110T
PBSS9110T
PBSS4230T
PBSS5230T
PBSS4240T
PBSS5240T
PBSS4350T
PBSS5350T
PBSS8110Z
PBSS9110Z
30
3.0
SOT23
30
100
2.0
PBSS5540Z, Tj = 45°C
40
50
PBSS4250X
PBSS5250X
20
PBSS4320X
PBSS5320X
30
PBSS4330X
PBSS5330X
PBSS4350X
PBSS5350X
50
PBSS4140DPN (NPN/PNP)
PBSS8110D
PBSS9110D
PBSS4240DPN (NPN/PNP)
PBSS4350D
PBSS5350D
PBSS303ND
PBSS303PD
80
PBSS304ND
PBSS304PD
100
PBSS305ND
PBSS305PD
PBSS4440D
PBSS5440D
PBSS4540Z
PBSS5350Z
PNP
60
40
PBSS4350Z
NPN
PBSS5540Z
PBSS4540X
PBSS5540X
80
PBSS4480X
PBSS5480X
20
PBSS4520X
PBSS5520X
Resistor-equipped transistors (RETs)
power
supply
R4
R3
Developed especially for the automotive sector, 500 mA RETs combine a transistor
control
input
R1
with two resistors to provide an optimal integrated solution for digital applications in
Tr2
Tr1
R2
Rload
automotive systems, for example control units. Also an extensive portfolio with single
and double 100 mA RETs is available for standard small-signal digital applications.
Key features
- Transistor and two resistors integrated in
one package
- Initial 500 mA portfolio with several resistor
combinations in SOT23 and SOT346 (SC-59A)
- Further resistor combinations and double
versions are planned
Key benefits
- Lower handling and inventory costs
- Reduced boardspace requirements
- Shorter assembly times and reduced
pick-and-place efforts
- Simpler design process
500
SOT23
VCEO max. (V)
R2 (kΩ)
1
1
PDTD113ET
PDTB113ET
PDTD113EK
PDTB113EK
2.2
2.2
PDTD123ET
PDTB123ET
PDTD123EK
PDTB123EK
1
10
PDTD113ZT
PDTB113ZT
PDTD113ZK
PDTB113ZK
2.2
10
PDTD123YT
PDTB123YT
PDTD123YK
PDTB123YK
50
NPN
SOT346 (SC-59A)
R1 (kΩ)
100 mA RETs
PNP
PNP
SOT323 (SC-70)
SOT363 (SC-88)
single
R1 (kΩ) R2 (kΩ)
50
R1 ≠ R2
R1 = R2
VCEO max. (V)
Only R1
100
NPN
SOT23
Configuration
IC max. (mA)
Key applications
- Digital applications
- Switching loads, e.g. for instrument clusters
- Controlling IC inputs, e.g. in engine
control units
- Increased end product reliability due to
fewer soldering points
500 mA RETs
IC max. (mA)
bra182
High side switch
NPN
PNP
double
NPN
PNP
NPN/NPN
NPN/PNP
PNP/PNP
2.2
2.2
PDTC123ET
PDTA123ET
PDTC123EU
PDTA123EU
PUMH20
PUMD20
PUMB20
4.7
4.7
PDTC143ET
PDTA143ET
PDTC143EU
PDTA143EU
PUMH15
PUMD15
PUMB15
10
10
PDTC114ET
PDTA114ET
PDTC114EU
PDTA114EU
PUMH11
PUMD3
PUMB11
22
22
PDTC124ET
PDTA124ET
PDTC124EU
PDTA124EU
PUMH1
PUMD2
PUMB1
47
47
PDTC144ET
PDTA144ET
PDTC144EU
PDTA144EU
PUMH2
PUMD12
PUMB2
100
100
PDTC115ET
PDTA115ET
PDTC115EU
PDTA115EU
PUMH24
PUMD24
PUMB24
2.2
10
PDTC123YT
PDTA123YT
PDTC123YU
PDTA123YU
2.2
47
PDTC123JT
PDTA123JT
PDTC123JU
PDTA123JU
PUMH10
PUMD10
PUMB10
4.7
10
PDTC143XT
PDTA143XT
PDTC143XU
PDTA143XU
PUMH18
PUMD18
PUMB18
4.7
47
PDTC143ZT
PDTA143ZT
PDTC143ZU
PDTA143ZU
PUMH13
PUMD13
PUMB13
10
47
PDTC114YT
PDTA114YT
PDTC114YU
PDTA114YU
PUMH9
PUMD9
PUMB9
22
47
PDTC124XT
PDTA124XT
PDTC124XU
PDTA124XU
PUMH16
PUMD16
PUMB16
47
10
PDTC144VT
PDTA144VT
PDTC144VU
PDTA144VU
47
22
PDTC144WT
PDTA144WT
PDTC144WU
PDTA144WU
PUMH17
PUMD17
PUMB17
2.2
-
PDTC123TT
PDTA123TT
PDTC123TU
PDTA123TU
PUMH30
PUMD30
PUMB30
4.7
-
PDTC143TT
PDTA143TT
PDTC143TU
PDTA143TU
PUMH7
PUMD6
PUMB3
10
-
PDTC114TT
PDTA114TT
PDTC114TU
PDTA114TU
PUMH4
PUMD4
PUMB4
22
-
PDTC124TT
PDTA124TT
PDTC124TU
PDTA124TU
PUMH19
PUMD19
PUMB19
47
-
PDTC144TT
PDTA144TT
PDTC144TU
PDTA144TU
PUMH14
PUMD14
PUMB14
100
-
PDTC115TT
PDTA115TT
PDTC115TU
PDTA115TU
5
BISS Loadswitches
Tr1
Low VCEsat
(BISS)
Power
supply
Combining a BISS transistor with a RET, BISS Loadswitches provide full
Load
R2
miniature loadswitch functionality in a single package and deliver
R1
best-in-class performance.
Control
input
Key features
- BISS transistor and RET in one package
- Low “threshold” voltage (< 1 V) compared
to MOSFET
- Small drive power required
- Best-in-class performance for loadswitches
Key benefits
- Integrated on-the-shelve solution for
switching loads
• Saves design and sourcing costs
• Reduction in boardspace requirements
• Just one or two external resistors needed
- Available for switching loads of 0.5 – 1 A
for full loadswitch capability
- Combination of low voltage drop and low
base drive current
• BISS transistor in the power path provides
the lowest energy-losses
• RET in the control path provides a low
base drive current
SOT457 (SC-74)
IC (A)
VCEO (V)
VCEsat (mV)
SOT363 (SC-88)
R1 = R2 (kΩ)
@ 500 mA
0.5
40
350
2.2
PBLS4001Y
4.7
PBLS4002Y
10
PBLS4003Y
22
PBLS4004Y
47
40
170
1.0
60
6
180
PBLS4005Y
2.2
PBLS4001D
4.7
PBLS4002D
10
PBLS4003D
22
PBLS4004D
47
PBLS4005D
2.2
PBLS6001D
4.7
PBLS6002D
10
PBLS6003D
22
PBLS6004D
47
PBLS6005D
Tr2
(RET)
MSE336
GND
Loadswitch
Key applications
- Supply line switches, e.g. in control units
- Control of lamps, motors and switches,
e.g. instrument clusters
- High side switches for drivers
Matched pair transistors
Vin
Rsense
Vout
Matched pair transistors are double transistors with matched current gain
hFE1/hFE2 and matched base-emitter voltage VBE1 - VBE2. The optimal product for the
Vsense
most common applications is offered by means of several matching-categories
Current sensor using
and different pinning options. Internally the transistors are fully isolated.
matched pairs
MSE265
Key features
- Current gain matching:
hFE1/hFE2 = 0.7, 0.9, 0.95, 0.98
- Base-emitter voltage matching:
VBE1 - VBE2 = 2 mV
- Standard double transistor pin-out for
Key benefits
- Improved performance of current mirror
and differential amplifier circuits
- Drop-in replacement for standard double
transistors (BCM-series)
- Simplified board layout (PMP-series)
Key applications
- Current mirror e.g. for current
measurement or to drive LED’s with a
constant current
- Differential amplifier e.g. sensor
signal amplification
BCM-types
- Application optimized pin-out for all
PMP-types
- Common emitter configuration for
5pin PMP-types
- Eliminates need for costly
additional trimming
- Comparator e.g. for DC/DC converters
SOT143B
Ptot max.
Polarity
NPN
250 mW
IC (mA)
100
100
380 mW
300 mW
300 mW
VCEO (V)
hFE min.
hFE max.
hFE1/hFE2
VBE1 - VBE2 (mV)
30
110
800
0.7
n.a.
0.9
2
0.9
2
0.95
2
PMP4501G
PMP4501Y
0.98
2
PMP4201G
PMP4201Y
0.7
n.a.
0.9
2
0.9
2
0.95
2
PMP5501G
PMP5501Y
0.98
2
PMP5201G
PMP5201Y
45
30
PNP
SOT457 (SC-74) SOT353 (SC-88A) SOT363 (SC-88)
45
200
110
200
450
800
450
BCV61/A/B/C
BCM61B
BCM847DS
BCM847BS
BCV62/A/B/C
BCM62B
BCM857DS
BCM857BS
7
MOSFET drivers
Integrated discrete MOSFET drivers combine several discrete products into one package to offer MOSFET
driving functionality. With a choice of configurations Philips offers solutions to take load from the driving circuit,
improve the efficiency of the MOSFET and enable design flexibility.
Key features
- Complete MOSFET driving functionality in
one package
- Several configurations available
Key benefits
- Improved MOSFET efficiency by
• Minimizing rise and fall time
• Fast gate (dis-)charge of the driven
MOSFET
- Takes load from the driving circuit
Key applications
- MOSFET driver
- Bipolar power transistor driver
- Push-pull driver
and thus minimizes the IC power dissipation
- More design flexibility: the control IC and
the MOSFET do not have to be placed as
close as possible anymore
- Cost-effective alternative to IC-solutions
SOT457 (SC-74)
SOT346 (SC-59A)
3
3
3
SOT457 (SC-74)
2
1
Tr1
6
5
Tr2
600 mW
IC (A)
Switching transistors reduced storage time
Low VCEsat (BISS) transistors Low VCEsat, high hFE and IC
0.1
2
Tr1
0.2
0.6
1.2
1.0
2.0
4, 5
Tr1
Tr2
D1
D1
D1
1
bra838
1
1
R1
4
Tr2
Tr1
R2
1
5, 6
bra839
2
250 mW
ICM (A)
bra841
bra840
600 mW
600 mW
R1 = R2 (kΩ)
PMD9050D
General purpose transistors
Tr1
3
4
Contains
2
Tr3
bra837
Ptot max.
2, 3
6
Rext
D1
Configuration
SOT457 (SC-74)
PMD4001K (NPN)
-
PMD9010D
PMD5001K (PNP)
2.2
PMD9001D
4.7
PMD9002D
10
PMD9003D
PMD4002K (NPN)
PMD2001D
PMD5002K (PNP)
PMD4003K (NPN)
PMD3001D
PMD5003K (PNP)
Release mid 2006
8
Low VF (MEGA) Schottky rectifiers
Maximum Efficiency General Application (MEGA) Schottky rectifiers offer
extremely low forward voltage drop during operation, resulting in the
highest efficiency and reduced heat dissipation. They are ideal, cost-effective
replacements for rectifiers in SMA or SOD123.
Key features
- Ultra low forward voltage drop VF
- Up to 3 A continuous current capability IF
- Up to 10 A peak current capability IFSM
- Low power dissipation
- Integrated guard ring for stress protection
Key benefits
- Less heat generation and therefore
increased reliability
- Cost effective replacement of SMA and
SOD123 rectifiers
• Reduced boardspace requirements
Key applications
- Power management circuits – especially
DC/DC conversion
- Various rectifier circuits, e.g. in airbag
control units
- Low power applications, e.g. in control units
• Medium power capability in SOD323F
(SC-90)
- Low losses over the entire current range
- Improved current handling capability
- Increased performance from small-signal
discrete footprints
- Free wheeling diode for inductive loads in
relays and motors
- Reverse polarity protection, e.g. in car
multimedia applications
SOT457 (SC-74)
SOT23
SOD123F
SOD323F (SC-90)
IR max. (µA) @
IF max. (A)
0.5
VR max. (V)
IFSM (A)
VF max. (mV)
VF max.
20
6
390
200
PMEG2005ET
PMEG2005EH
PMEG2005EJ
30
10
430
150
PMEG3005ET
PMEG3005EH
PMEG3005EJ
40
10
470
100
PMEG4005ET
PMEG4005EH
PMEG4005EJ
9
500
200
PMEG2010EH
PMEG2010EJ
10
550
70
9
430
200
PMEH2010AEH
30
10
560
150
PMEG3010EH
30
10
520
50
40
10
640
100
10
660
50
17.5
650
350
20
9
660
70
PMEG2015EH
PMEG2015EJ
30
9
550
1000
PMEG3015EH
PMEG3015EJ
10
9
460
3000
PMEG1020EH
PMEG1020EJ
20
9
525
200
PMEG2020EH
PMEG2020EJ
30
9
620
1000
PMEG3020EH
PMEG3020EJ
10
9
530
3000
PMEG1030EH
PMEG1030EJ
20
1
60
1.5
2
3
PMEG2010AEJ
PMEG3010EJ
PMEG3010CEJ
PMEG4010EH
PMEG4010EJ
PMEG6010CEJ
PMEG6010AED
9
ESD protection diodes
With their optimized diode structure, Philips’ ESD protection diodes offer a superior size / performance ratio
with outstanding ESD protection of automotive electronics. A wide portfolio is available for protection of all
interfaces in automotive electronics; from general line-protection for engine/body -controllers up to specific
devices for protection of USB-interfaces or antenna-inputs in car entertainment applications.
Key features
- Excellent ESD clamping performance
- Ultra low leakage current
- Low device capacitance
- ESD protection up to 30 kV
- IEC 61000-4-2, level 4 compliant (8 kV
contact, 15 kV air discharge)
Key benefits
- Optimized diode structure for best-in-class
ESD protection of today’s sensitive
car electronics
- Low clamping voltages and fast response
times ensure optimal protection
Key applications
- Data and audio interfaces,
e.g. car multimedia line protection
- Overvoltage protection,
e.g. airbag controllers
- Car drivers interface protection,
- Ultra low leakage current helps to reduce
overall power consumption
- Low device capacitance keeps unwanted
disturbances in the circuits to a minimum
e.g. dashboard panels
- CAN and LIN bus protection
Number of lines
uniConfiguration
15 V
bidirectional
V
0.05
15
0.05
24
2
0.05
2
1
2
2
2
SOD323 (SC-76)
IRM max. @ VRWM
µA
24 V
1
SOT23
1
C max. pF
PPP max. W
13
160
24
17
200
PESD1CAN
1
5
200
260
PESD5V0S2UAT
1
0.05
12
75
180
PESD12VS2UAT
1
0.05
24
50
160
PESD24VS2UAT
2
1
1
5.25
200
260
PESD5V2S2UT
2
1
1
12
75
180
PESD12VS2UT
2
1
1
24
50
160
PESD24VS2UT
1
1
5
65
500
PESD5V0L1BA
1
0.05
12
13
200
PESD12VL1BA
1
0.05
24
9
200
PESD24VL1BA
bra526
PESD1LIN
1
3
2
mse213
1
3
2
bra004
1
3
2
mse212
1
2
mse211
10
PESD1LIN and PESD1CAN
Also specific automotive devices are available; with the PESD1LIN
Philips offers the best-in-class ESD protection of one LIN bus line.
The asymmetrical diode configuration ensures optimized
electromagnetic immunity of LIN transceivers. The PESD1CAN is
designed to protect two CAN bus lines and can be used for both
high speed CAN bus and the fault-tolerant CAN bus protection.
With the very low C max. of the PESD1CAN the unwanted parasitic
capacitance is reduced to an absolute minimum.
Power Application (e.g. electro motor, inductive loads)
LIN Node
Connector
Application (e.g. voltage regulator and microcontroller)
SPLIT
CANH
R T/2
CAN BUS
TRANSCEIVER
CBAT
BAT
CAN
bus
R T/2
LIN
CANL
24 V
CMASTER/SLAVE
15 V
GND
LIN
Transceiver
Common
mode choke
(optional)
2
1
CG
PESD1LIN
PESD1CAN
3
bra328
bra519
Small-signal discretes packages for automotive
Series
S-mini
Philips name
Body size (mm)
JEITA
lxwxh
SOD323F
1.7 x 1.25 x 0.7
SC-90
SOD323
Pins
2
flatleads
1.7 x 1.25 x 0.95
2
SC-76
SOD123F
2.6 x 1.6 x 1.1
2
flatleads
SOT323
2.0 x 1.25 x 0.95
3
2.0 x 1.25 x 0.95
5
2.0 x 1.25 x 0.95
6
SOT23
2.9 x 1.3 x 1.0
3
SOT346
2.9 x 1.5 x 1.15
3
SOT143B
2.9 x 1.3 x 1.0
4
SOT457
2.9 x 1.5 x 1.0
6
SC-70
SOT353
SC-88A
SOT363
SC-88
Mini
SC-59
SC-74
Medium power
SOT89
4.5 x 2.5 x 1.25
SC-62
SOT223
3
flatleads
6.5 x 3.5 x 1.65
3/4
SC-73
11
Philips Semiconductors
Philips Semiconductors is one of the world’s top semiconductor suppliers, with 20 manufacturing and assembly sites and a sales organization that
delivers in 60 countries. For a complete up-to-date list of our sales offices please visit our website http://www.semiconductors.philips.com/sales
©2006 Koninklijke Philips Electronics N.V.
All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without
notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.
Date of release: May 2006
Document order number: 9397 750 15548
Printed in the Netherlands
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