LTC3403 1.5MHz, 600mA Synchronous Step-Down Regulator with Bypass Transistor U FEATURES ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO The LTC ®3403 is a high efficiency monolithic synchronous buck regulator optimized for WCDMA power amplifier applications. The output voltage can be dynamically programmed from 0.3V to 3.5V. At VOUT > 3.6V an internal bypass P-channel MOSFET connects VOUT directly to VIN, eliminating power loss through the inductor. Selectable forced continuous mode enables fast VOUT response to the controlling input. Dynamically Adjustable Output from 0.3V to 3.5V Very Low Quiescent Current: Only 20µA During Operation 600mA Output Current Internal P-Channel MOSFET Bypass Transistor High Efficiency: Up to 96% 1.5MHz Constant Frequency Operation No Schottky Diode Required Low Dropout Operation: 100% Duty Cycle 2.5V to 5V Input Voltage Range Drives Optional External P-Channel MOSFET Shutdown Mode Draws < 1µA Supply Current Current Mode Operation for Excellent Line and Load Transient Response Overtemperature Protected Available in 8-Lead 3mm × 3mm DFN Package Supply current is only 20µA in Burst Mode® operation and drops to <1µA in shutdown. The 2.5V to 5V input voltage range makes the LTC3403 ideally suited for single Li-Ion battery-powered applications. 100% duty cycle provides low dropout operation, extending battery life in portable systems. Switching frequency is internally set at 1.5MHz, allowing the use of small surface mount inductors and capacitors. The internal synchronous switch increases efficiency and eliminates the need for an external Schottky diode. U APPLICATIO S ■ ■ The LTC3403 is available in a low profile 8-lead 3mm × 3mm DFN package. WCDMA Cell Phone Power Amplifiers Wireless Modems , LTC and LT are registered trademarks of Linear Technology Corporation. Burst Mode is a registered trademark of Linear Technology Corporation. U TYPICAL APPLICATIO 95 90 2.2µH* CIN† 10µF CER SW VIN LTC3403 MODE RUN GDR VOUT COUT** 4.7µF CER VOUT 3× VREF 600mA REF OUTPUT PROGRAMMING DAC GND 3 *MURATA LQH32CN2R2M11 **TAIYO YUDEN JMK212BJ475MG † TAIYO YUDEN JMK212BJ106MN EFFICIENCY (%) VIN 2.7V TO 5V VIN = 3.6V 85 80 75 65 55 3403 F01a VIN = 3.6V VIN = 4.2V 70 60 WCDMA RF PA VIN = 4.2V 50 0.1 FORCED CONTINUOUS MODE Burst Mode OPERATION VOUT = 1.8V 1 10 100 OUTPUT CURRENT (mA) 1000 3403 F01b Figure 1a. WCDMA Transmitter Power Supply Figure 1b. Efficiency vs Output Current 3403f 1 LTC3403 W W W AXI U U ABSOLUTE RATI GS U U W PACKAGE/ORDER I FOR ATIO (Note 1) Input Supply Voltage (< 300µs) .................. – 0.3V to 6V Input Supply Voltage (DC) ....................... – 0.3V to 5.5V RUN, REF, MODE, VOUT, GDR Voltages ..... – 0.3V to VIN SW Voltage .................................. – 0.3V to (VIN + 0.3V) P-Channel Switch Source Current (DC) ............. 800mA N-Channel Switch Sink Current (DC) ................. 800mA Peak SW Sink and Source Current ........................ 1.3A Bypass P-Channel FET Source Current ...................... 1A Operating Temperature Range (Note 2) .. – 40°C to 85°C Junction Temperature (Note 3) ............................ 125°C Storage Temperature Range ................ – 65°C to 150°C (DD Package) .................................... –65°C to 125°C ORDER PART NUMBER TOP VIEW GDR 1 VIN 2 GND SW 8 VOUT 7 REF 3 6 MODE 4 5 RUN 9 DD PACKAGE 8-LEAD (3mm × 3mm) PLASTIC DFN EXPOSED PAD IS GND (PIN 9) MUST BE SOLDERED TO PCB TJMAX = 125°C, θJA = 43°C/ W, θJC = 3°C/ W LTC3403EDD DD PART MARKING LAAX Consult LTC Marketing for parts specified with wider operating temperature ranges. ELECTRICAL CHARACTERISTICS The ● denotes specifications which apply over the full operating temperature range, otherwise specifications are TA = 25°C. VIN = 3.6V unless otherwise specified. SYMBOL VOUT PARAMETER Regulated Output Voltage ∆VOUT IPK VLOADREG VIN IS Output Voltage Line Regulation Peak Inductor Current Output Voltage Load Regulation Input Voltage Range Input DC Operating Current Burst Mode Operation Forced Continuous Mode Operation Shutdown Oscillator Frequency fOSC VREF RPFET Bypass PFET Turn-Off Threshold Bypass PFET Turn-On Threshold RDS(ON) of P-Channel FET RNFET RDS(ON) of N-Channel FET RBYPASS RDS(ON) of Bypass P-Channel FET ILSW ILBYP VRUN IRUN VMODE IMODE IREF SW Leakage Bypass PFET Leakage RUN Threshold RUN Input Current MODE Threshold MODE Input Current REF Input Current CONDITIONS VREF = 1.1V, MODE = VIN VREF = 0.1V, MODE = VIN VIN = 2.5V to 5V VIN = 3V, VREF = 0.9V ● ● ● 0.70 ● MODE = 0V, SW = Open MODE = VIN, SW = Open VRUN = 0V, VIN = 4.2V VREF ≥ 0.25V VREF ≤ 0.1V VREF = VREF = ISW = 160mA, Wafer Level ISW = 160mA, DD Package ISW = –160mA, Wafer Level ISW = –160mA, DD Package IOUT = 100mA, VIN = 3V, Wafer Level IOUT = 100mA, VIN = 3V, DD Package (Note 4) VRUN = 0V, VSW = 0V or 5V, VIN = 5V VOUT = 0V, VIN = 5V, VREF = 0V ● ● VRUN = 2.5V or 0V MIN 3.23 0.25 2.5 1.2 550 1.167 0.3 ● ● ● ● TYP 3.3 0.3 0.1 1 0.7 0.3 MAX 3.37 0.35 0.4 1.25 5 20 1.5 0.1 1.5 700 1.2 1.21 0.3 0.4 0.3 0.4 0.15 0.20 ±0.01 ±0.01 1 ±0.01 1.5 ±0.01 ±0.01 35 2.5 1 1.8 850 1.26 0.4 0.4 0.18 ±1 ±1 1.5 ±1 2 ±1 ±1 UNITS V V %/V A % V µA mA µA MHz kHz V V Ω Ω Ω Ω Ω Ω µA µA V µA V µA µA 3403f 2 LTC3403 ELECTRICAL CHARACTERISTICS Note 1: Absolute Maximum Ratings are those values beyond which the life of a device may be impaired. Note 2: The LTC3403E is guaranteed to meet performance specifications from 0°C to 70°C. Specifications over the –40°C to 85°C operating temperature range are assured by design, characterization and correlation with statistical process controls. Note 3: TJ is calculated from the ambient temperature TA and power dissipation PD according to the following formula: LTC3403: TJ = TA + (PD)(43°C/W) Note 4: When VREF > 1.2V and VREF x3 > VIN, the P-channel FET will be on in parallel with the bypass PFET reducing the overall RDS(ON). Note 5: This IC includes overtemperature protection that is intended to protect the device during momentary overload conditions. Junction temperature will exceed 125°C when overtemperature protection is active. Continuous operation above the specified maximum operating junction temperature may impair device reliability. U W TYPICAL PERFOR A CE CHARACTERISTICS Efficiency vs VOUT Efficiency vs VIN 100 100 95 90 90 75 70 65 70 600mA FORCED CONTINUOUS MODE 60 TA = 25°C VIN = 3.6V 55 3.5 VIN (V) 3.0 4.0 4.5 0 1 2 3 90 80 30 20 10 0 0.1 VIN = 3.6V 1.65 VIN = 4.2V 1.60 70 VIN = 4.2V 50 40 1.70 VIN = 3.6V 80 VIN = 4.2V TA = 25°C FORCED CONTINUOUS MODE Burst Mode OPERATION VOUT = 1.5V 1 10 100 OUTPUT CURRENT (mA) 1000 3403 G03 EFFICIENCY (%) EFFICIENCY (%) 60 Oscillator Frequency vs Temperature 100 VIN = 3.6V 60 50 40 30 20 10 0 0.1 1000 3403 G02 Efficiency vs Output Current 100 VIN = 3.6V 1 10 100 OUTPUT CURRENT (mA) 3403 GO1a Efficiency vs Output Current 70 0 0.1 4 VOUT (V) 3403 G01 90 TA = 25°C FORCED CONTINUOUS MODE Burst Mode OPERATION VOUT = 1.2V 40 10 VIN = 3.6V VIN = 4.2V TA = 25°C FORCED CONTINUOUS MODE Burst Mode OPERATION VOUT = 2.5V 1 10 100 OUTPUT CURRENT (mA) 1000 3403 G04 FREQUENCY (MHz) 2.5 VIN = 4.2V 50 20 50 40 VIN = 3.6V 60 30 IL = 10mA 60 VIN = 4.2V 70 100mA FORCED CONTINUOUS MODE 80 EFFICIENCY (%) EFFICIENCY (%) IL = 600mA 80 VIN = 3.6V 80 IL = 300mA 85 EFFICIENCY (%) Efficiency vs Output Current 100 100mA BURST MODE 0PERATION IL = 100mA 90 50 (From Figure 1a) 1.55 1.50 1.45 1.40 1.35 1.30 –50 –25 50 25 75 0 TEMPERATURE (°C) 100 125 3403 G05 3403f 3 LTC3403 U W TYPICAL PERFOR A CE CHARACTERISTICS (From Figure 1a) Oscillator Frequency vs Supply Voltage Frequency vs VOUT 1600 TA = 25°C 1.7 1.6 1200 1.5 1000 1.4 1.3 1.2 TA = 25°C VIN = 3.6V 1400 FREQUENCY (kHz) OSCILLATOR FREQUENCY (MHz) 1.8 800 600 2 3 4 5 SUPPLY VOLTAGE (V) 400 6 0 0.4 0.2 1.0 0.6 0.8 VOUT (V) 1.2 3403 G06 3403 F06a RDS(ON) vs Input Voltage 1.844 T = 25°C A VIN = 3.6V 1.834 0.7 1.824 0.5 TA = 25°C 0.6 RDS(ON) (Ω) OUTPUT VOLTAGE (V) Output Voltage vs Load Current 1.814 1.804 MAIN SWITCH 0.4 SYNCHRONOUS SWITCH 0.3 1.794 0.2 1.784 0.1 BYPASS SWITCH 0 1.774 0 0 100 200 300 400 500 600 700 800 900 1000 LOAD CURRENT (mA) 5 4 2 3 INPUT VOLTAGE (V) 1 6 3403 G08 3403 G07 Dynamic Supply Current vs Supply Voltage RDS(ON) vs Temperature 0.7 VIN = 4.2V VIN = 3.6V RDS(ON) (Ω) 0.5 0.4 VIN = 3.6V 0.3 VIN = 3V 0.2 0.1 0 –50 –25 VIN = 4.2V MAIN SWITCH SYNCHRONOUS SWITCH BYPASS SWITCH DYNAMIC SUPPLY CURRENT (µA) VIN = 2.7V 0.6 4500 TA = 25°C 4000 VOUT = 1.8V ILOAD = 0A 3500 100 125 FORCED CONTINUOUS MODE 3000 2500 2000 1500 1000 Burst Mode OPERATION 500 0 50 25 75 0 TEMPERATURE (°C) 7 2 3 4 5 6 SUPPLY VOLTAGE (V) 3403 G09 3403 G10 3403f 4 LTC3403 U W TYPICAL PERFOR A CE CHARACTERISTICS (From Figure 1a) Switch Leakage vs Input Voltage Switch Leakage vs Temperature 300 120 TA = 25°C RUN = 0V VIN = 5.5V RUN = 0V 100 SWITCH LEAKAGE (pA) SWITCH LEAKAGE (nA) 250 200 150 100 MAIN SWITCH 50 SYNCHRONOUS SWITCH 80 60 MAIN SWITCH 40 20 SYNCHRONOUS SWITCH 0 –50 –25 50 25 75 0 TEMPERATURE (°C) 100 125 0 0 1 2 3 4 INPUT VOLTAGE (V) 5 6 3403 G12 3403 G11 Start-Up from Shutdown Burst Mode Operation RUN 2V/DIV VOUT 0.1V/DIV VOUT 1V/DIV IL 200mA/DIV IL 500mA/DIV 3403 G13 VIN = 3.6V 40µs/DIV VREF = 0.6V RLOAD = 3Ω MODE = 3.6V, FORCED CONTINUOUS MODE VIN = 3.6V VREF = 0.6V ILOAD = 60mA MODE = 0V 2µs/DIV 3403 G14 Load Step Response Forced Continuous Mode VOUT 200mV/DIV VOUT 10mV/DIV IL 500mA/DIV IL 200mA/DIV ILOAD 500mA/DIV VIN = 3.6V VREF = 0.6V ILOAD = 0A MODE = 3.6V 200ns/DIV 3403 G15 VIN = 3.6V 20µs/DIV VREF = 0.6V ILOAD = 50mA TO 600mA MODE = 0V, Burst Mode OPERATION 3403 G16 3403f 5 LTC3403 U W TYPICAL PERFOR A CE CHARACTERISTICS (From Figure 1a) Load Step Response REF Transient VREF 0.5V/DIV VOUT 100mV/DIV IL 500mA/DIV VOUT 1V/DIV ILOAD 500mA/DIV 3403 G17 VIN = 3.6V 20µs/DIV VREF = 0.6V ILOAD = 0mA TO 600mA MODE = 0V, FORCED CONTINUOUS MODE 3403 G18 VIN = 4.2V 40µs/DIV VREF = 0V TO 1.4V RLOAD = 5Ω MODE = 4.2V, FORCED CONTINUOUS MODE VOUT vs VREF Reference vs GDR 4.5 IL = 100mA VIN = 4.2V 4.0 IL = 600mA REF 1V/DIV 3.5 VOUT (V) 3.0 2.5 2.0 GDR 2V/DIV 1.5 1.0 VIN = 3.6V CGDR = 1000pF 0.5 5µs/DIV 3403 F20 0 0 0.5 1.0 1.5 VREF (V) 3403 G19 3403f 6 LTC3403 U U U PI FU CTIO S GDR (Pin 1): MOSFET Gate Driver. Drives a small external P-channel MOSFET. VIN (Pin 2): Main Supply Pin. Must be closely decoupled to GND, Pin 3, with a 10µF or greater ceramic capacitor. GND (Pin 3): Ground Pin. SW (Pin 4): Switch Node Connection to Inductor. This pin connects to the drains of the internal main and synchronous power MOSFET switches. RUN (Pin 5): Run Control Input. Forcing this pin above 1.5V enables the part. Forcing this pin below 0.3V shuts down the device. In shutdown, all functions are disabled drawing <1µA supply current. Do not leave RUN floating. MODE (Pin 6): Mode Select Input. To select forced continuous mode, tie to VIN. Grounding this pin selects Burst Mode operation. Do not leave this pin floating. REF (Pin 7): External Reference Input. Controls the output voltage to 3× the applied voltage at REF. Also turns on the bypass MOSFET when VREF > 1.2V. VOUT (Pin 8): Output Voltage Feedback Pin. An internal resistive divider divides the output voltage down by 3 for comparison to the external reference voltage. The drain of the P-channel bypass MOSFET is connected to this pin. Exposed Pad (Pin 9): Connect to GND, Pin 3. W FU CTIO AL DIAGRA U U MODE 6 SLOPE COMP 0.65V OSC OSC 2 VIN FREQ ÷2 REF – + 7 – + VOUT – EA FB 8 0.85V EN SLEEP – + BURST 360k 180k S Q R Q RS LATCH P-CHANNEL VIN 5Ω + ICOMP SWITCHING LOGIC AND BLANKING CIRCUIT ANTISHOOTTHRU 4 SW – BCMP 5 IRCMP – RUN + + 1.2V 9 3 GND 1 GDR 3403 BD 3403f 7 LTC3403 U OPERATIO (Refer to Functional Diagram) Main Control Loop The LTC3403 uses a constant frequency, current mode step-down architecture. The main (P-channel MOSFET), synchronous (N-channel MOSFET) and bypass (P-channel MOSFET) switches are internal. During normal operation, the internal main switch is turned on each cycle when the oscillator sets the RS latch, and turned off when the current comparator, ICOMP, resets the RS latch. The peak inductor current at which ICOMP resets the RS latch, is controlled by the output of error amplifier EA. When the load current increases, it causes a slight decrease in the feedback voltage, FB, relative to the external reference, which in turn, causes the EA amplifier’s output voltage to increase until the average inductor current matches the new load current. While the main switch is off, the synchronous switch is turned on until the beginning of the next clock cycle. In forced continuous mode the inductor current is constantly cycled. In this mode, the output voltage can respond quickly to the external reference voltage by sourcing or sinking current as needed. Burst Mode Operation The LTC3403 is capable of Burst Mode operation in which the internal power switches operate intermittently based on load demand. In Burst Mode operation, the peak current of the inductor is set to approximately 200mA regardless of the output load. Each burst event can last from a few cycles at light loads to almost continuously cycling with short sleep intervals at moderate loads. In between these burst events, the power switches and any unneeded circuitry are turned off, reducing the quiescent current to 20µA. In this sleep state, the load current is being supplied solely from the output capacitor. As the output voltage droops, the EA amplifier’s output rises above the sleep threshold signal- ing the BURST comparator to trip and turn the top switch on. This process repeats at a rate that is dependent on the load demand. Controlling the Output Voltage The output voltage can be dynamically programmed from 0.3V to 3.5V using the REF input. Because the gain to VOUT from REF is internally set to 3, the corresponding input range at REF is 0.1V to 1.167V. VOUT can be modulated during operation by driving REF with an external DAC. When REF exceeds 1.2V, an internal bypass P-channel MOSFET connects VIN to VOUT, dramatically reducing the drop across the inductor and the main switch. Dropout Operation If the reference voltage would cause VOUT to exceed VIN, the LTC3403 enters dropout operation. During dropout, the main switch remains on continuously and operates at 100% duty cycle. If the voltage at REF is less than 1.2V, the bypass P-channel MOSFET will stay off even in dropout operation. The output voltage is then determined by the input voltage minus the voltage drop across the main switch and the inductor. An important detail to remember is that at low input supply voltages, the RDS(ON) of the P-channel switch increases (see Typical Performance Characteristics). Therefore, the user should calculate the power dissipation when the LTC3403 is used at 100% duty cycle with low input voltage (See Thermal Considerations in the Applications Information section). Low Supply Operation The LTC3403 will operate with input supply voltages as low as 2.5V, but the maximum allowable output current is reduced at this low voltage. Figure 2 shows the reduction in the maximum output current as a function of input voltage for various output voltages. 3403f 8 LTC3403 U OPERATIO (Refer to Functional Diagram) MAXIMUM OUTPUT CURRENT (mA) 1200 Slope Compensation and Inductor Peak Current Slope compensation provides stability in constant frequency architectures by preventing subharmonic oscillations at high duty cycles. It is accomplished internally by adding a compensating ramp to the inductor current signal at duty cycles in excess of 40%. Normally, this results in a reduction of maximum inductor peak current for duty cycles > 40%. However, the LTC3403 uses a patent-pending scheme that counteracts this compensating ramp, which allows the maximum inductor peak current to remain unaffected throughout all duty cycles. 1000 800 600 VOUT = 1.8V VOUT = 2.5V VOUT = 1.5V 400 200 0 2.5 3.0 3.5 4.0 4.5 SUPPLY VOLTAGE (V) 5.0 5.5 3403 F02 Figure 2. Maximum Output Current vs Input Voltage U W U U APPLICATIO S I FOR ATIO The basic LTC3403 application circuit is shown in Figure␣ 1. External component selection is driven by the load requirement and begins with the selection of L followed by CIN and COUT. Inductor Selection For most applications, the value of the inductor will fall in the range of 1µH to 4.7µH. Its value is chosen based on the desired ripple current. Large value inductors lower ripple current and small value inductors result in higher ripple currents. As Equation 1 shows, a greater difference between VIN and VOUT produces a larger ripple current. Where these voltages are subject to change, the highest VIN and lowest VOUT will determine the maximum ripple current. A reasonable starting point for setting ripple current is IL = 240mA (40% of the maximum load, 600mA). V 1 ∆IL = VOUT 1 – OUT VIN (f)(L) (1) At output voltages below 0.6V, the switching frequency decreases linearly to a minimum of approximately 700kHz. This places the maximum ripple current (in forced continuous mode) at the highest input voltage and the lowest output voltage. In practice, the resulting ouput ripple voltage is 10mV to 15mV using the components specified in Figure 1. The DC current rating of the inductor should be at least equal to the maximum load current plus half the ripple current to prevent core saturation. Thus, a 720mA rated inductor should be enough for most applications (600mA + 120mA). For better efficiency, choose a low DC-resistance inductor. The inductor value also has an effect on Burst Mode operation. The transition to low current operation begins when the inductor current peaks fall to approximately 200mA. Lower inductor values (higher IL) will cause this to occur at lower load currents, which can cause a dip in efficiency in the upper range of low current operation. In Burst Mode operation, lower inductance values will cause the burst frequency to increase. Inductor Core Selection Different core materials and shapes will change the size/ current and price/current relationship of an inductor. Toroid or shielded pot cores in ferrite or permalloy materials are small and don’t radiate much energy but generally cost more than powdered iron core inductors with similar electrical characteristics. The choice of which style inductor to use often depends more on the price versus size requirements and any radiated field/EMI requirements than on what the LTC3403 requires to operate. Table 1 shows some typical surface mount inductors that work well in LTC3403 applications. 3403f 9 LTC3403 U W U U APPLICATIO S I FOR ATIO Table 1. Representative Surface Mount Inductors Part Number Value (µH) DCR (ΩMAX) MAX DC Current (A) Size WxLxH (mm3) Sumida CDRH2D11 1.5 2.2 3.3 0.068 0.098 0.123 0.90 0.78 0.60 3.2 x 3.2 x 1.2 Sumida CDRH2D18/LD 2.2 3.3 4.7 0.041 0.054 0.078 0.85 0.75 0.63 3.2 x 3.2 x 2.0 Sumida CMD4D06 2.2 3.3 4.7 0.116 0.174 0.216 0.95 0.77 0.75 3.5 x 4.1 x 0.8 Murata LQH32C 1.0 2.2 4.7 0.060 0.097 0.150 1.00 0.79 0.65 2.5 x 3.2 x 2.0 Taiyo Yuden LQLBC2518 1.0 1.5 2.2 0.080 0.110 0.130 0.78 0.66 0.60 1.8 x 2.5 x 1.8 Toko D412F 2.2 3.3 4.7 0.14 0.20 0.22 1.14 0.90 0.80 4.6 x 4.6 x 1.2 CIN and COUT Selection In continuous mode, the source current of the top MOSFET is a square wave of duty cycle VOUT/VIN. To prevent large voltage transients, a low ESR input capacitor sized for the maximum RMS current must be used. The maximum RMS capacitor current is given by: CIN required IRMS ≅ IOMAX [VOUT (VIN – VOUT )]1/ 2 VIN This formula has a maximum at VIN = 2VOUT, where IRMS = IOUT/2. This simple worst-case condition is commonly used for design because even significant deviations do not offer much relief. Note that the capacitor manufacturer’s ripple current ratings are often based on 2000 hours of life. This makes it advisable to further derate the capacitor, or choose a capacitor rated at a higher temperature than required. Always consult the manufacturer if there is any question. The selection of COUT is driven by the required effective series resistance (ESR). Typically, once the ESR requirement for COUT has been met, the RMS current rating generally far exceeds the IRIPPLE(P-P) requirement. The output ripple VOUT is determined by: 1 ∆VOUT ≅ ∆IL ESR + 8f C OUT where f = operating frequency, COUT = output capacitance and IL = ripple current in the inductor. For a fixed output voltage, the output ripple is highest at maximum input voltage since IL increases with input voltage. Aluminum electrolytic and dry tantalum capacitors are both available in surface mount configurations. In the case of tantalum, it is critical that the capacitors are surge tested for use in switching power supplies. An excellent choice is the AVX TPS series of surface mount tantalum. These are specially constructed and tested for low ESR so they give the lowest ESR for a given volume. Other capacitor types include Sanyo POSCAP, Kemet T510 and T495 series, and Sprague 593D and 595D series. Consult the manufacturer for other specific recommendations. The bulk capacitance values in Figure 1(a) (CIN = 10µF, COUT = 4.7µF) are tailored to mobile phone applications, in which the output voltage is expected to slew quickly according to the needs of the power amplifier. Holding the output capacitor to 4.7µF facilitates rapid charging and discharging. When the output voltage descends quickly in forced continuous mode, the LTC3403 will actually pull current from the output until the command from VREF is satisfied. On alternate half cyles, this current actually exits the VIN terminal, potentially causing a rise in VIN and forcing current into the battery. To prevent deterioration of the battery, use sufficient bulk capacitance with low ESR; at least 10µF is recommended. 3403f 10 LTC3403 U W U U APPLICATIO S I FOR ATIO Using Ceramic Input and Output Capacitors However, care must be taken when ceramic capacitors are used at the input and the output. When a ceramic capacitor is used at the input and the power is supplied by a wall adapter through long wires, a load step at the output can induce ringing at the input, VIN. At best, this ringing can couple to the output and be mistaken as loop instability. At worst, a sudden inrush of current through the long wires can potentially cause a voltage spike at VIN large enough to damage the part. When choosing the input and output ceramic capacitors, choose the X5R or X7R dielectric formulations. These dielectrics have the best temperature and voltage characteristics of all the ceramics for a given value and size. Ceramic capacitors of Y5V material are not recommended because normal operating voltages cause their bulk capacitance to become much less than the nominal value. Programming the Output Voltage With a DAC The output voltage can be dynamically programmed to any voltage from 0.3V to 3.5V with an external DAC driving the REF pin. When the output is commanded low, the output voltage descends quickly in forced continuous mode pulling current from the output and transferring it to the input. If the input is not connected to a low impedance source capable of absorbing the energy, the input voltage could rise above the absolute maximum voltage of the part and get damaged. The faster VOUT is commanded low, the higher is the voltage spike at the input. For best results, ramp the REF pin from high to low as slow as the application will allow. Avoid abrupt changes in voltage of >0.2V/µs. If ramp control is unavailable, an RC filter with a time constant of 10µs can be inserted between the REF pin and the DAC as shown in Figure 3. REF DAC 1000pF GND Figure 3. Filtering the REF Pin Efficiency Considerations The efficiency of a switching regulator is equal to the output power divided by the input power times 100%. It is often useful to analyze individual losses to determine what is limiting the efficiency and which change would produce the most improvement. Efficiency can be expressed as: Efficiency = 100% – (L1 + L2 + L3 + ...) where L1, L2, etc. are the individual losses as a percentage of input power. Although all dissipative elements in the circuit produce losses, two main sources usually account for most of the losses in LTC3403 circuits: VIN quiescent current and I2R losses. The VIN quiescent current loss dominates the efficiency loss at very low load currents whereas the I2R loss dominates the efficiency loss at medium to high load currents. In a typical efficiency plot, the efficiency curve at very low load currents can be misleading since the actual power lost is of little consequence as illustrated in Figure␣ 4. 1 0.1 POWER LOSS (W) Higher values, lower cost ceramic capacitors are now becoming available in smaller case sizes. Their high ripple current, high voltage rating and low ESR make them ideal for switching regulator applications. Because the LTC3403’s control loop does not depend on the output capacitor’s ESR for stable operation, ceramic capacitors can be used freely to achieve very low output ripple and small circuit size. LTC3403 10k VOUT = 1.2V VOUT = 1.5V VOUT = 1.8V VOUT = 2.5V 0.01 0.001 0.0001 0.00001 0.1 1 10 100 LOAD CURRENT (mA) 1000 3406 F04 Figure 4. Power Lost vs Load Current 3403f 11 LTC3403 U W U U APPLICATIO S I FOR ATIO 1. The VIN quiescent current consists of two components: the DC bias current as given in the electrical characteristics and the internal main switch and synchronous switch gate charge currents. The gate charge current results from switching the gate capacitance of the internal power MOSFET switches. Each time the gate is switched from high to low to high again, a packet of charge, dQ, moves from VIN to ground. The resulting dQ/dt is typically larger than the DC bias current. In continuous mode, IGATECHG = f(QT + QB), where QT and QB are the gate charges of the internal top and bottom switches. Both the DC bias and gate charge losses are proportional to VIN, thus, their effects will be more pronounced at higher supply voltages. (The gate charge of the bypass FET is, of course, negligible because it is infrequently cycled.) To prevent the LTC3403 from exceeding the maximum junction temperature, the user will need to do some thermal analysis. The goal of the thermal analysis is to determine whether the power dissipated exceeds the maximum junction temperature of the part. The temperature rise is given by: 2. I2R losses are calculated from the resistances of the internal switches, RSW, and external inductor RL. In continuous mode, the average output current flowing through inductor L is “chopped” between the main switch and the synchronous switch. Thus, the series resistance looking into the SW pin is a function of both top and bottom MOSFET RDS(ON) and the duty cycle (DC) as follows: As an example, consider the LTC3403 in dropout at an input voltage of 2.7V, a load current of 600mA (0.9V ≤ VREF < 1.2V) and an ambient temperature of 70°C. With VREF < 1.2V, the entire 600mA flows through the main P-channel FET. From the typical performance graph of switch resistance, the RDS(ON) of the P-channel switch at 70°C is approximately 0.52Ω. Therefore, power dissipated by the part is: RSW = (RDS(ON)TOP)(DC) + (RDS(ON)BOT)(1 – DC) The RDS(ON) for both the top and bottom MOSFETs can be obtained from the Typical Performance Charateristics curves. Hence, to obtain I2R losses, simply add RSW to RL and multiply the result by the square of the average output current. Other losses including CIN and COUT ESR dissipative losses and inductor core losses generally account for less than 2% total additional loss. Thermal Considerations In most applications the LTC3403 does not dissipate much heat due to its high efficiency. But, in applications where the LTC3403 is running at high ambient temperature with low supply voltage and high duty cycles, such as in dropout, the heat dissipated may exceed the maximum junction temperature of the part. If the junction temperature reaches approximately 150°C, both power switches will be turned off and the SW node will become high impedance. TR = (PD)(θJA) where PD is the power dissipated by the regulator and θJA is the thermal resistance from the junction of the die to the ambient temperature. The junction temperature, TJ, is given by: TJ = TA + TR where TA is the ambient temperature. PD = (ILOAD2) • RDS(ON) = 187.2mW For the 8L DFN package, the θJA is 43°C/W. Thus, the junction temperature of the regulator is: TJ = 70°C + (0.1872)(43) = 78°C which is below the maximum junction temperature of 125°C. Modifying this example, suppose that VREF is raised to 1.2V or higher. This turns on the bypass P-channel FET as well as the main P-channel FET. Assume that the inductor’s DC resistance is 0.1Ω, the RDS(ON) of the main P-channel switch is 0.52Ω, and the RDS(ON) of the bypass P-channel switch is 0.21Ω. The current through the P-channel switch and the inductor will be 152mA, causing power dissipation of (0.152A)2 • 0.62Ω = 14.3mW. The bypass FET will dissipate (0.448A)2 • 0.21Ω = 42.5mW. Thus, TJ = 70°C + (0.0143 + 0.0425)(43) = 72.4°C. 3403f 12 LTC3403 U W U U APPLICATIO S I FOR ATIO Reductions in power dissipation occur at higher supply voltages, where the junction temperature is lower due to reduced switch resistance (RDS(ON)). Further reductions may be achieved using an external bypass FET (Figure 5), which operates in parallel with the network described above. M1 LTC3403 VIN VIN VOUT SW GDR VOUT Checking Transient Response The regulator loop response can be checked by looking at the load transient response. Switching regulators take several cycles to respond to a step in load current. When a load step occurs, VOUT immediately shifts by an amount equal to (ILOAD • ESR), where ESR is the effective series resistance of COUT. ILOAD also begins to charge or discharge COUT, which generates a feedback error signal. The regulator loop then acts to return VOUT to its steady state value. During this recovery time VOUT can be monitored for overshoot or ringing that would indicate a stability problem. For a detailed explanation of switching control loop theory, see Application Note 76. A second, more severe transient is caused by switching in loads with large (>1µF) supply bypass capacitors. The discharged bypass capacitors are effectively put in parallel with COUT, causing a rapid drop in VOUT. No regulator can deliver enough current to prevent this problem if the load switch resistance is low and it is driven quickly. The only solution is to limit the rise time of the switch drive so that the load rise time is limited to approximately (25 • CLOAD). Thus, a 10µF capacitor charging to 3.3V would require a 250µs rise time, limiting the charging current to about 130mA. LTC3403 F05 Figure 5. Driving an External Bypass FET VOUT COUT 1 2 VIN CIN GDR VOUT VIN REF 3 GND 4 SW MODE RUN 8 7 6 RREF DAC CREF 5 LTC3403 BOLD LINES INDICATE HIGH CURRENT PATHS LTC3403 F06 Figure 6.Layout Diagram 3403f 13 LTC3403 U W U U APPLICATIO S I FOR ATIO PC Board Layout Checklist When laying out the printed circuit board, the following checklist should be used to ensure proper operation of the LTC3403. These items are also illustrated graphically in Figures 6 and 7. Check the following in your layout: 1. The power traces, consisting of the GND trace, the SW trace and the VIN trace should be kept short, direct and wide. 2. Does the (+) plate of CIN connect to VIN as closely as possible? This capacitor provides the AC drive to the internal power MOSFETs. 3. Keep the (–) plates of CIN and COUT as close as possible. Design Example As a design example, assume the LTC3403 is used in a single lithium-ion battery-powered cellular phone application. The VIN will be operating from a maximum of 4.2V down to about 2.7V. The load current requirement is a VIA TO REF RREF TO DAC maximum of 0.6A but most of the time it will be in standby mode, requiring only 2mA. Efficiency at both low and high load currents is important. Output voltage is 2.5V. With this information we can calculate L using Equation (1), L= V 1 VOUT 1 – OUT VIN (f)(∆IL ) (2) Substituting VOUT = 2.5V, VIN = 4.2V, IL = 240mA and f = 1.5MHz in Equation (2) gives: L= 2.5V 2.5V 1– = 2.81µH 1.5MHz (240mA) 4.2V A 2.2µH inductor works well for this application. For best efficiency choose a 720mA or greater inductor with less than 0.2Ω series resistance. CIN will require an RMS current rating of at least 0.3A ≅ LOAD(MAX)/2 at temperature and COUT will require an ESR of less than 0.25Ω. In most cases, a ceramic capacitor will satisfy this requirement. COUT CIN GDR 1 VIN 2 GND SW 8 VOUT 7 REF 3 6 MODE 4 5 RUN VIN 2.7V TO 5V LTC3403 L1 CREF CIN† 10µF CER DAC 1000pF 3403 F07 VIA TO VIN LTC3403 4 VIN SW 6 1 5 10k VIA TO GND 2 7 MODE GDR RUN VOUT 8 2.2µH* VOUT COUT** 4.7µF CER REF GND 3 * MURATA LQH32CN2R2M11 ** TAIYO YUDEN JMK212BJ475MG † TAIYO YUDEN JMK212BJ106MN LTC3403 F08 Figure 7. Suggested Layout Figure 8 3403f 14 LTC3403 U PACKAGE DESCRIPTIO DD Package 8-Lead Plastic DFN (3mm × 3mm) (Reference LTC DWG # 05-08-1698) R = 0.115 TYP 5 0.38 ± 0.10 8 0.58 ±0.05 3.35 ±0.05 1.65 ±0.05 2.25 ±0.05 (2 SIDES) 3.00 ±0.10 (4 SIDES) PACKAGE OUTLINE 1.65 ± 0.10 (2 SIDES) PIN 1 TOP MARK (DD8) DFN 0902 0.28 ± 0.05 0.200 REF 0.50 BSC 2.38 ±0.05 (2 SIDES) RECOMMENDED SOLDER PAD PITCH AND DIMENSIONS 0.75 ±0.05 0.00 – 0.05 4 0.28 ± 0.05 1 0.50 BSC 2.38 ±0.10 (2 SIDES) BOTTOM VIEW—EXPOSED PAD NOTE: 1. DRAWING TO BE MADE A JEDEC PACKAGE OUTLINE M0-229 VARIATION OF (WEED-1) 2. ALL DIMENSIONS ARE IN MILLIMETERS 3. DIMENSIONS OF EXPOSED PAD ON BOTTOM OF PACKAGE DO NOT INCLUDE MOLD FLASH. MOLD FLASH, IF PRESENT, SHALL NOT EXCEED 0.15mm ON ANY SIDE 4. EXPOSED PAD SHALL BE SOLDER PLATED 3403f Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights. 15 LTC3403 U TYPICAL APPLICATIO High Efficiency Step-Down Converter with External Bypass MOSFET M1 VIN 2.7V TO 5V 2 CIN† 10µF CER CONTROL DAC 6 5 7 VIN SW 4 4.7µH* LTC3403 MODE RUN 1 GDR 8 VOUT VOUT 3× REF COUT** 600mA 4.7µF CER REF GND 3403 TA01 3 * MURATA LQH3C2R4M74 ** TAIYO YUDEN JMK212BJ475MG † TAIYO YUDEN JMK212BJ106MN RELATED PARTS PART NUMBER DESCRIPTION COMMENTS LT1932 Constant Current, 1.2MHz, High Efficiency White LED Boost Regulator Up to 8 White LEDs, VIN: 1V to 10V, VOUT(MAX): 34V, IQ: 1.2mA, ISD: <1µA, ThinSOTTM Package LT1937 Constant Current, 1.2MHz, High Efficiency White LED Boost Regulator Up to 4 White LEDs, VIN: 2.5V to 10V, VOUT(MAX): 34V, IQ: 1.9mA, ISD: <1µA, ThinSOT, SC70 Packages LTC3200/LTC3200-5 Low Noise, 2MHz, Regulated Charge Pump White LED Driver Up to 6 White LEDs, VIN: 2.7V to 4.5V, IQ: 8mA, ISD: <1µA, MSOP/ThinSOT Packages LTC3250-1.5 250mA,1.5MHz, High Efficiency Step Down Charge Pump Up to 88% Efficiency, VIN: 3.1V to 5.5V, VOUT: 1.5V, IQ: 35µA, ISD: <1µA, ThinSOT Package LTC3251/LTC3251-1.5 500mA,Spread Spectrum, High Efficiency Step Down Charge Pump Up to 88% Efficiency, VIN: 2.7V to 5.5V, VOUT: 0.9V to 1.6V,1.5V; IQ: 8µA, ISD: <1µA, MS Package LTC3252 Dual 250mA/Channel,Spread Spectrum, High Efficiency Step Down Charge Pump Up to 88% Efficiency, VIN: 2.7V to 5.5V, VOUT: 0.9V to 1.6V, IQ: 60µA, ISD: <1µA, DFN-12 Package LTC3405/LTC3405A 300mA (IOUT), 1.5MHz, Synchronous Step-Down DC/DC Converter 95% Efficiency, VIN: 2.7V to 6V, VOUT(MIN): 0.8V, IQ: 20µA, ISD: <1µA, ThinSOT Package LTC3406/LTC3406B 600mA (IOUT), 1.5MHz, Synchronous Step-Down DC/DC Converter 95% Efficiency, VIN: 2.5V to 5.5V, VOUT(MIN): 0.6V, IQ: 20µA, ISD: <1µA, ThinSOT Package LTC3440 600mA (IOUT), 2MHz, Synchronous Buck-Boost DC/DC Converter 95% Efficiency, VIN: 2.5V to 5.5V, VOUT: 2.5V to 5.5V, IQ: 25µA, ISD: <1µA, MSOP Package LTC3441 1A (IOUT), 1MHz, Synchronous Buck-Boost DC/DC Converter 95% Efficiency, VIN: 2.4V to 5.5V, VOUT: 1.5V to 5.25V, IQ: 25µA, ISD: <1µA, DFN-12 Package LT3465/LT3465A Constant Current, 1.2MHz/2.7MHz, High Efficiency Up to 6 White LEDs, VIN: 2.7V to 16V, VOUT(MAX): 30V, IQ: 2mA, White LED Boost Regulator with Integrated Schottky Diode ISD: <1µA, ThinSOT Package ThinSOT is a trademark of Linear Technology Corporation. 3403f 16 Linear Technology Corporation LT/TP 0603 1K • PRINTED IN USA 1630 McCarthy Blvd., Milpitas, CA 95035-7417 (408) 432-1900 ● FAX: (408) 434-0507 ● www.linear.com LINEAR TECHNOLOGY CORPORATION 2003