MG600J2YS60A TOSHIBA IGBT Module Silicon N Channel IGBT MG600J2YS60A(600V/600A 2in1) High Power Switching Applications Motor Control Applications · Integrates a complete half bridge power circuit and fault-signal output circuit in one package. (short circuit and over temperature) · The electrodes are isolated from case. · Low thermal resistance · VCE (sat) = 2.1 V (typ.) Equivalent Circuit Ｃ1 5 6 FO 7 E1/C2 4 OT 1 2 FO 3 E2 Signal terminal 1. G (L) 2. FO (L) 3. E (L) 4. VD 5. G (H) 6. FO (H) 7. E (H) 8. Open 1 2002-09-06 MG600J2YS60A Package Dimensions: 2-123C1B 1. G (L) 2. FO (L) 3. E (L) 4. VD 5. G (H) 6. FO (H) 7. E (H) 8. Open 5 6 3 4 1 2 25.4 ± 0.6 8 1. G (L) 2. FO (L) 3. E (L) 4. VD 5. G (H) 6. FO (H) 7. E (H) 8. Open 2.54 7 2.54 Signal Terminal Layout 2.54 Weight: 375 g 2 2002-09-06 MG600J2YS60A Maximum Ratings (Ta = 25°C) Stage Characteristics Symbol Rating Unit Collector-emitter voltage VCES 600 V Gate-emitter voltage VGES ±20 V DC IC 600 1 ms ICP 1200 DC IF 600 1 ms IFM 1200 Collector power dissipation (Tc = 25°C) PC 2770 W Control voltage (OT) VD 20 V Fault input voltage VFO 20 V Fault input current IFO 20 mA Tj 150 °C Storage temperature range Tstg -40~125 °C Operation temperature range Tope -20~100 °C Isolation voltage Visol 2500 (AC 1 min) V ¾ 3 (M5) N･m Collector current Inverter Forward current Control Junction temperature Module Screw torque A A Electrical Characteristics (Tj = 25°C) 1. Inverter Stage Characteristics Gate leakage current Collector cut-off current Symbol IGES ICES Test Condition Min Typ. Max Unit VGE = ±20 V, VCE = 0 ¾ ¾ +3/-4 mA VGE = +10 V, VCE = 0 ¾ ¾ 100 nA VCE = 600 V, VGE = 0 ¾ ¾ 1.0 mA 5.0 6.5 8.0 V Tj = 25°C ¾ 2.1 2.4 Tj = 125°C ¾ ¾ 2.6 ¾ 5000 ¾ 0.10 ¾ 1.00 ¾ ¾ 2.00 ¾ ¾ 0.50 ¾ ¾ 0.50 ¾ 2.1 2.4 V Min Typ. Max Unit 720 ¾ ¾ A 100 ¾ 125 °C ¾ ¾ 6.5 ms Gate-emitter cut-off voltage VGE (off) VCE = 5 V, IC = 600 mA Collector-emitter saturation voltage VCE (sat) VGE = 15 V, IC = 600 A Input capacitance Cies Turn-on delay time Switching time Turn-off time Fall time VCE = 10 V, VGE = 0, f = 1 MHz td (on) toff tf Reverse recovery time trr Forward voltage VF VCC = 300 V, IC = 600 A VGE = ±15 V, RG = 5.1 W (Note 1) IF = 600 A V pF ms Note 1: Switching time test circuit & timing chart 2. Control (Tc = 25°C) Characteristics Symbol Fault output current OC Over temperature OT Fault output delay time td (Fo) Test Condition VGE = 15 V ¾ VCC = 300 V, VGE = ±15 V 3 2002-09-06 MG600J2YS60A 3. Module (Tc = 25°C) Characteristics Symbol Junction to case thermal resistance Rth (j-c) Case to fin thermal resistance Rth (c-f) Test Condition Min Typ. Max Inverter IGBT stage ¾ ¾ 0.045 Inverter FRD stage ¾ ¾ 0.068 With silicon compound ¾ 0.013 ¾ Unit °C/W °C/W Switching Time Test Circuit RG IF -VGE VCC IC L RG Timing Chart 90% VGE 10% 90% Irr Irr 20% Irr 90% IC trr 10% 10% td (on) td (off) 4 tf 2002-09-06 MG600J2YS60A Remark <Short circuit capability condition> l Short circuit capability is 6 ms after fault output signal. Please keep following condition to use fault output signal. · VCC < = 375 V < VGE < · 13.8 V = = 16.0 V > · RG = 5.1 W · Tj < = 50°C <Gate voltage> l To use this product, VGE must be provided higher than 13.8 V. In case VGE is less than 13.8 V, fault signal FO may not be output even under error conditions. <For parallel use> l For parallel use of this product, please use the same rank for both VCE (sat) and VF among IGBT in parallel without fail. VCE (sat) VF Min Max 18 B 1.5 1.8 20 C 1.7 2.0 22 D 1.9 2.2 24 E 2.1 2.4 5 2002-09-06 MG600J2YS60A IC – VCE IC – VCE 600 600 12 V Common emitter Common emitter Tj = 25°C 15 V 500 VGE = 20 V (A) 15 V (A) 400 10 V IC VGE = 20 V 9V Collector current IC Collector current 12 V Tj = 125°C 500 300 200 100 10 V 9V 400 300 8V 200 100 8V 0 0 1 2 3 4 Collector-emitter voltage VCE 0 0 5 (V) 1 2 Collector-emitter voltage VCE – VGE VCE (V) Tj = 125°C 10 VCE VCE 10 Collector-emitter voltage 8 6 4 IC = 900 A 2 6 4 IC = 900 A 2 300 A 300 A 600 A 0 0 5 10 15 Gate-emitter voltage VGE 600 A 0 0 20 (V) 5 10 15 Gate-emitter voltage VGE VCE – VGE 20 (V) IC – VGE 12 1000 Common emitter Common emitter Tj = -40°C VCE = 5 V (A) 10 VCE (V) (V) Common emitter Tj = 25°C 8 800 25°C IC 8 600 Collector current Collector-emitter voltage 5 12 Common emitter (V) 4 VCE – VGE 12 Collector-emitter voltage 3 6 4 IC = 900 A 200 2 -40°C 300 A 0 0 Tj = 125°C 400 5 10 Gate-emitter voltage VGE 600 A 15 0 0 20 (V) 4 8 Gate-emitter voltage VGE 6 12 (V) 2002-09-06 MG600J2YS60A IF – VF VCE, VGE – QG Common cathode (V) VGE = 0 V Tj = 25°C 400 Collector-emitter voltage Forward current IF (A) VCE 500 300 125°C 200 -40°C 100 0 0 0.5 1 1.5 Forward voltage 2 VF 400 12 200 8 100 4 1000 (V) QG 4000 0 6000 5000 (nC) Eon, Eoff – RG (mJ) SW loss Eon, Eoff (ns) toff SW time 3000 1000 Common emitter, VCC = 300 V IC = 600 A Tj = 25°C VGE = ±15 V Tj = 125°C td (off) 1000 2000 Charge SW time – RG 10000 16 300 0 0 2.5 20 Common emitter RL = 0.5 W Tj = 25°C (V) 500 Gate-emitter voltage VGE 600 ton td (on) tr Eon 100 Eoff Common emitter VCC = 300 V IC = 600 A tf 100 0 5 Tj = 25°C Tj = 125°C VGE = ±15 V 10 15 20 Gate resistance RG 10 0 25 5 (9) 10 15 20 Gate resistance RG 100 Common emitter, VCC = 300 V RG = 5.1 W VGE = ±15 V Eoff Tj = 25°C (mJ) Tj = 125°C 1000 SW loss Eon, Eoff (ns) toff SW time (9) Eon, Eoff – IC SW time – IC 10000 td (off) ton td (on) tf Eon 10 Common emitter VCC = 300 V RG = 5.1 W tr Tj = 25°C Tj = 125°C VGE = ±15 V 100 0 25 100 200 300 Collector current 400 IC 500 1 0 600 (A) 100 200 300 Collector current 7 400 IC 500 600 (A) 2002-09-06 MG600J2YS60A Irr, trr – IF Edsw – IF (mJ) 100 trr Reverse recovery loss Edsw Reverse recovery time trr (ns) Reverse recovery current Irr (A) 1000 100 Irr 10 0 100 200 300 400 Forward current IF 500 10 1 0.1 0 600 200 (A) 400 Forward current 600 IF (A) C – VCE 1000000 Cies Capacitance C (pF) 100000 10000 Coes 1000 Cres 100 0.01 0.1 1 10 Collector-emitter voltage 100 VCE 1000 (V) Reverse bias SOA 10000 Rth – tw Tc = 25°C 1000 (°C/W) 100 10 Rth (j-c) Collector current IC (A) 1 Diode stage 0.1 Transistor stage 0.01 Tj < = 125°C RG = 5.1 W VGE = ±15 V 1 0 200 400 Collector-emitter voltage 0.001 0.001 600 VCE (V) 0.01 0.1 Pulse width 8 1 tw 10 (s) 2002-09-06 MG600J2YS60A RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 9 2002-09-06