Toshiba MG600J2YS60A Toshiba igbt module silicon n channel igbt Datasheet

MG600J2YS60A
TOSHIBA IGBT Module Silicon N Channel IGBT
MG600J2YS60A(600V/600A 2in1)
High Power Switching Applications
Motor Control Applications
·
Integrates a complete half bridge power circuit and fault-signal output circuit in one package.
(short circuit and over temperature)
·
The electrodes are isolated from case.
·
Low thermal resistance
·
VCE (sat) = 2.1 V (typ.)
Equivalent Circuit
C1
5
6
FO
7
E1/C2
4
OT
1
2
FO
3
E2
Signal terminal
1.
G (L)
2.
FO (L)
3.
E (L)
4.
VD
5.
G (H)
6.
FO (H)
7.
E (H)
8.
Open
1
2002-09-06
MG600J2YS60A
Package Dimensions: 2-123C1B
1.
G (L)
2.
FO (L)
3.
E (L)
4.
VD
5.
G (H)
6.
FO (H)
7.
E (H)
8.
Open
5
6
3
4
1
2
25.4 ± 0.6
8
1.
G (L)
2.
FO (L)
3.
E (L)
4.
VD
5.
G (H)
6.
FO (H)
7.
E (H)
8.
Open
2.54
7
2.54
Signal Terminal Layout
2.54
Weight: 375 g
2
2002-09-06
MG600J2YS60A
Maximum Ratings (Ta = 25°C)
Stage
Characteristics
Symbol
Rating
Unit
Collector-emitter voltage
VCES
600
V
Gate-emitter voltage
VGES
±20
V
DC
IC
600
1 ms
ICP
1200
DC
IF
600
1 ms
IFM
1200
Collector power dissipation (Tc = 25°C)
PC
2770
W
Control voltage (OT)
VD
20
V
Fault input voltage
VFO
20
V
Fault input current
IFO
20
mA
Tj
150
°C
Storage temperature range
Tstg
-40~125
°C
Operation temperature range
Tope
-20~100
°C
Isolation voltage
Visol
2500 (AC 1 min)
V
¾
3 (M5)
N・m
Collector current
Inverter
Forward current
Control
Junction temperature
Module
Screw torque
A
A
Electrical Characteristics (Tj = 25°C)
1. Inverter Stage
Characteristics
Gate leakage current
Collector cut-off current
Symbol
IGES
ICES
Test Condition
Min
Typ.
Max
Unit
VGE = ±20 V, VCE = 0
¾
¾
+3/-4
mA
VGE = +10 V, VCE = 0
¾
¾
100
nA
VCE = 600 V, VGE = 0
¾
¾
1.0
mA
5.0
6.5
8.0
V
Tj = 25°C
¾
2.1
2.4
Tj = 125°C
¾
¾
2.6
¾
5000
¾
0.10
¾
1.00
¾
¾
2.00
¾
¾
0.50
¾
¾
0.50
¾
2.1
2.4
V
Min
Typ.
Max
Unit
720
¾
¾
A
100
¾
125
°C
¾
¾
6.5
ms
Gate-emitter cut-off voltage
VGE (off)
VCE = 5 V, IC = 600 mA
Collector-emitter saturation voltage
VCE (sat)
VGE = 15 V,
IC = 600 A
Input capacitance
Cies
Turn-on delay time
Switching time
Turn-off time
Fall time
VCE = 10 V, VGE = 0, f = 1 MHz
td (on)
toff
tf
Reverse recovery time
trr
Forward voltage
VF
VCC = 300 V, IC = 600 A
VGE = ±15 V, RG = 5.1 W
(Note 1)
IF = 600 A
V
pF
ms
Note 1: Switching time test circuit & timing chart
2. Control (Tc = 25°C)
Characteristics
Symbol
Fault output current
OC
Over temperature
OT
Fault output delay time
td (Fo)
Test Condition
VGE = 15 V
¾
VCC = 300 V, VGE = ±15 V
3
2002-09-06
MG600J2YS60A
3. Module (Tc = 25°C)
Characteristics
Symbol
Junction to case thermal resistance
Rth (j-c)
Case to fin thermal resistance
Rth (c-f)
Test Condition
Min
Typ.
Max
Inverter IGBT stage
¾
¾
0.045
Inverter FRD stage
¾
¾
0.068
With silicon compound
¾
0.013
¾
Unit
°C/W
°C/W
Switching Time Test Circuit
RG
IF
-VGE
VCC
IC
L
RG
Timing Chart
90%
VGE
10%
90% Irr
Irr
20% Irr
90%
IC
trr
10%
10%
td (on)
td (off)
4
tf
2002-09-06
MG600J2YS60A
Remark
<Short circuit capability condition>
l Short circuit capability is 6 ms after fault output signal.
Please keep following condition to use fault output signal.
· VCC <
= 375 V
< VGE <
· 13.8 V =
= 16.0 V
>
· RG = 5.1 W
· Tj <
= 50°C
<Gate voltage>
l To use this product, VGE must be provided higher than 13.8 V.
In case VGE is less than 13.8 V, fault signal FO may not be output even under error conditions.
<For parallel use>
l For parallel use of this product, please use the same rank for both VCE (sat) and VF among IGBT in
parallel without fail.
VCE (sat)
VF
Min
Max
18
B
1.5
1.8
20
C
1.7
2.0
22
D
1.9
2.2
24
E
2.1
2.4
5
2002-09-06
MG600J2YS60A
IC – VCE
IC – VCE
600
600
12 V
Common emitter
Common emitter
Tj = 25°C
15 V
500
VGE = 20 V
(A)
15 V
(A)
400
10 V
IC
VGE = 20 V
9V
Collector current
IC
Collector current
12 V
Tj = 125°C
500
300
200
100
10 V
9V
400
300
8V
200
100
8V
0
0
1
2
3
4
Collector-emitter voltage
VCE
0
0
5
(V)
1
2
Collector-emitter voltage
VCE – VGE
VCE
(V)
Tj = 125°C
10
VCE
VCE
10
Collector-emitter voltage
8
6
4
IC = 900 A
2
6
4
IC = 900 A
2
300 A
300 A
600 A
0
0
5
10
15
Gate-emitter voltage VGE
600 A
0
0
20
(V)
5
10
15
Gate-emitter voltage VGE
VCE – VGE
20
(V)
IC – VGE
12
1000
Common emitter
Common emitter
Tj = -40°C
VCE = 5 V
(A)
10
VCE
(V)
(V)
Common emitter
Tj = 25°C
8
800
25°C
IC
8
600
Collector current
Collector-emitter voltage
5
12
Common emitter
(V)
4
VCE – VGE
12
Collector-emitter voltage
3
6
4
IC = 900 A
200
2
-40°C
300 A
0
0
Tj = 125°C
400
5
10
Gate-emitter voltage VGE
600 A
15
0
0
20
(V)
4
8
Gate-emitter voltage VGE
6
12
(V)
2002-09-06
MG600J2YS60A
IF – VF
VCE, VGE – QG
Common cathode
(V)
VGE = 0 V
Tj = 25°C
400
Collector-emitter voltage
Forward current IF
(A)
VCE
500
300
125°C
200
-40°C
100
0
0
0.5
1
1.5
Forward voltage
2
VF
400
12
200
8
100
4
1000
(V)
QG
4000
0
6000
5000
(nC)
Eon, Eoff – RG
(mJ)
SW loss Eon, Eoff
(ns)
toff
SW time
3000
1000
Common emitter, VCC = 300 V
IC = 600 A
Tj = 25°C
VGE = ±15 V
Tj = 125°C
td (off)
1000
2000
Charge
SW time – RG
10000
16
300
0
0
2.5
20
Common emitter
RL = 0.5 W
Tj = 25°C
(V)
500
Gate-emitter voltage VGE
600
ton
td (on)
tr
Eon
100
Eoff
Common emitter
VCC = 300 V
IC = 600 A
tf
100
0
5
Tj = 25°C
Tj = 125°C
VGE = ±15 V
10
15
20
Gate resistance RG
10
0
25
5
(9)
10
15
20
Gate resistance RG
100
Common emitter, VCC = 300 V
RG = 5.1 W
VGE = ±15 V
Eoff
Tj = 25°C
(mJ)
Tj = 125°C
1000
SW loss Eon, Eoff
(ns)
toff
SW time
(9)
Eon, Eoff – IC
SW time – IC
10000
td (off)
ton
td (on)
tf
Eon
10
Common emitter
VCC = 300 V
RG = 5.1 W
tr
Tj = 25°C
Tj = 125°C
VGE = ±15 V
100
0
25
100
200
300
Collector current
400
IC
500
1
0
600
(A)
100
200
300
Collector current
7
400
IC
500
600
(A)
2002-09-06
MG600J2YS60A
Irr, trr – IF
Edsw – IF
(mJ)
100
trr
Reverse recovery loss Edsw
Reverse recovery time trr (ns)
Reverse recovery current Irr (A)
1000
100
Irr
10
0
100
200
300
400
Forward current
IF
500
10
1
0.1
0
600
200
(A)
400
Forward current
600
IF
(A)
C – VCE
1000000
Cies
Capacitance C
(pF)
100000
10000
Coes
1000
Cres
100
0.01
0.1
1
10
Collector-emitter voltage
100
VCE
1000
(V)
Reverse bias SOA
10000
Rth – tw
Tc = 25°C
1000
(°C/W)
100
10
Rth (j-c)
Collector current
IC
(A)
1
Diode stage
0.1
Transistor stage
0.01
Tj <
= 125°C
RG = 5.1 W
VGE = ±15 V
1
0
200
400
Collector-emitter voltage
0.001
0.001
600
VCE
(V)
0.01
0.1
Pulse width
8
1
tw
10
(s)
2002-09-06
MG600J2YS60A
RESTRICTIONS ON PRODUCT USE
000707EAA
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
9
2002-09-06
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