CM150TF-12H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Six-IGBT IGBTMOD™ H-Series Module 150 Amperes/600 Volts B D X Q X Q X Z - M5 THD (7 TYP.) Bu P Eu P Bv P Ev P BwP EwP Bu N Eu N Bv N Ev N BwN EwN S N P P P J R L C TYP A N U V W N T K G F M U M AA W H Y - DIA. (4 TYP.) AA E .110 TAB J V P P BuP EuP u BvP EvP v BwP EwP w BuN EuN BvN EvN EwN Features: □ Low Drive Power □ Low VCE(sat) □ Discrete Super-Fast Recovery (70ns) Free-Wheel Diode □ High Frequency Operation (20-25kHz) □ Isolated Baseplate for Easy Heat Sinking BwN N N Outline Drawing and Circuit Diagram Dimensions Inches A 4.21 B 4.02 C D Millimeters Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of six IGBT Transistors in a three phase bridge configuration, with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Dimensions Inches Millimeters 107.0 P 0.57 14.5 102.0 Q 0.55 14.0 3.543±0.01 90.0±0.25 R 0.47 12.0 3.15±0.01 80.0±0.25 S 0.43 11.0 E 1.57 40.0 T 0.39 10.0 F 1.38 35.0 U 0.33 8.5 G 1.28 32.5 V 0.30 7.5 H 1.26 Max. 32.0 Max W 0.24 Rad. Rad. 6.0 J 1.18 30.0 X 0.24 6.0 K 0.98 25.0 Y 0.22 5.5 L 0.96 24.5 Z M5 Metric M5 M 0.79 20.0 AA 0.08 2.0 N 0.67 17.0 Applications: □ AC Motor Control □ Motion/Servo Control □ UPS □ Welding Power Supplies □ Laser Power Supplies Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM150TF-12H is a 600V (VCES), 150 Ampere Six-IGBT IGBTMOD™ Power Module. Type Current Rating Amperes VCES Volts (x 50) CM 150 12 319 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM150TF-12H Six-IGBT IGBTMOD™ H-Series Module 150 Amperes/600 Volts Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Symbol CM150TF-12H Units Junction Temperature Tj –40 to 150 °C Storage Temperature Tstg –40 to 125 °C Collector-Emitter Voltage (G-E SHORT) VCES 600 Volts Gate-Emitter Voltage VGES ±20 Volts IC 150 Amperes ICM 300* Amperes Collector Current Peak Collector Current Diode Forward Current IF 150 Amperes Diode Forward Surge Current IFM 200* Amperes Power Dissipation Pd 600 Watts – 17 in-lb Max. Mounting Torque M5 Terminal Screws Max. Mounting Torque M5 Mounting Screws – 17 in-lb Module Weight (Typical) – 830 Grams VRMS 2500 Volts V Isolation * Pulse width and repetition rate should be such that device junction temperature does not exceed the device rating. Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current ICES VCE = VCES, VGE = 0V – – 1.0 mA Gate Leakage Current IGES VGE = VGES, VCE = 0V – – 0.5 µA Gate-Emitter Threshold Voltage VGE(th) IC = 15mA, VCE = 10V 4.5 6.0 7.5 Volts Collector-Emitter Saturation Voltage VCE(sat) IC = 150A, VGE = 15V – 2.1 2.8** Volts IC = 150A, VGE = 15V, Tj = 150°C – 2.15 – Volts Total Gate Charge QG VCC = 300V, IC = 150A, VGS = 15V – 450 – nC Diode Forward Voltage VFM IE = 150A, VGE = 0V – – 2.8 Volts Min. Typ. Max. Units – – 15 nF ** Pulse width and repetition rate should be such that device junction temperature rise is negligible. Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Resistive Turn-on Delay Time td(on) Load Rise Time Switching Turn-off Delay Time Times Fall Time Test Conditions VGE = 0V, VCE = 10V, 1MHz – – 5.3 nF – – 3 nF – – 200 ns tr VCC = 300V, IC = 150A, – – 550 ns td(off) VGE1 = VGE2 = 15V, RG = 4.2Ω – – 300 ns – – 300 ns tf Diode Reverse Recovery Time trr IE = 150A, diE/dt = –300A/µs – – 110 ns Diode Reverse Recovery Charge Qrr IE = 150A, diE/dt = –300A/µs – 0.41 – µC Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified 320 Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case Rth(j-c) Per IGBT – – 0.21 °C/W Thermal Resistance, Junction to Case Rth(j-c) Per FWDi – – 0.47 °C/W Contact Thermal Resistance Rth(c-f) Per Module, Thermal Grease Applied – – 0.025 °C/W Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM150TF-12H Six-IGBT IGBTMOD™ H-Series Module 150 Amperes/600 Volts OUTPUT CHARACTERISTICS (TYPICAL) 300 300 200 11 150 10 100 9 50 7 VCE = 10V Tj = 25°C Tj = 125°C 250 200 150 100 50 8 0 0 0 2 4 6 8 10 VGE = 15V Tj = 25°C Tj = 125°C 4 3 2 1 0 0 4 8 12 16 0 20 50 100 150 200 GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 103 102 Tj = 25°C IC = 300A 6 IC = 150A 4 2 CAPACITANCE, Cies, Coes, Cres, (nF) EMITTER CURRENT, IE, (AMPERES) Tj = 25°C 8 102 Cies 101 Coes 100 101 0 12 16 0 20 0.8 2.4 3.2 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) REVERSE RECOVERY TIME, t rr, (ns) 103 tf td(off) td(on) tr VCC = 300V VGE = ±15V RG = 4.2Ω Tj = 125°C 102 COLLECTOR CURRENT, IC, (AMPERES) 100 103 Irr 101 t rr di/dt = -300A/µsec Tj = 25°C 101 101 102 EMITTER CURRENT, IE, (AMPERES) 102 GATE CHARGE, VGE 102 102 101 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 103 102 10-1 10-1 4.0 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) GATE-EMITTER VOLTAGE, VGE, (VOLTS) 101 101 1.6 100 103 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 8 REVERSE RECOVERY CURRENT, Irr, (AMPERES) 4 Cres VGE = 0V f = 1MHz IC = 60A 0 300 250 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 10 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 5 12 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 250 VGE = 20V 15 COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) Tj = 25oC SWITCHING TIME, (ns) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) 16 VCC = 200V 12 VCC = 300V 8 4 0 0 100 200 300 400 500 600 GATE CHARGE, QG, (nC) 321 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 10-3 101 100 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 10-2 10-1 100 Single Pulse TC = 25°C Per Unit Base = R th(j-c) = 0.21°C/W 10-1 10-1 10-2 10-2 10-3 10-5 TIME, (s) 322 101 10-4 10-3 10-3 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth • (NORMALIZED VALUE) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth • (NORMALIZED VALUE) CM150TF-12H Six-IGBT IGBTMOD™ H-Series Module 150 Amperes/600 Volts 10-3 101 100 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-2 10-1 100 101 Single Pulse TC = 25°C Per Unit Base = R th(j-c) = 0.47°C/W 10-1 10-1 10-2 10-2 10-3 10-5 TIME, (s) 10-4 10-3 10-3