FJI5603D NPN Silicon Transistor Applications Equivalent Circuit • High Voltage and High Speed Power Switch Application • Electronic Ballast Application C Features B • Wide Safe Operating Area • Small Variance in Storage Time • Built-in Free Wheeling Diode I2-PAK 1 E 1.Base Absolute Maximum Ratings* Symbol 2.Collector 3.Emitter Ta = 25°C unless otherwise noted Parameter Ratings Units BVCBO Collector-Base Voltage 1600 V BVCEO Collector-Emitter Voltage 800 V BVEBO Emitter-Base Voltage 12 V IC Collector Current(DC) 3 A ICP Collector Current(Pulse)** 6 A IB Base Current 2 A IBP Base Current(Pulse)** 4 A PD Power Dissipation(TC=25°C) 100 W TJ Junction Temperature 150 °C TSTG Storage Junction Temperature Range - 65 ~ +150 °C EAS Avalanche Energy(Tj=25°C, 8mH) 3.5 mJ * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. ** Pulse Test : Pulse Width = 5ms, Duty Cycle < 10% Thermal Characteristics* Ta=25°C unless otherwise noted Symbol Parameter Rθjc Thermal Resistance, Junction to Case Rθja Thermal Resistance, Junction to Ambient Ratings Units 1.25 °C/W 80 °C/W * Device mounted on minimum pad size Ordering Information Part Number Marking Package Packing Method FJI5603DTU J5603D I2PAK TUBE © 2008 Fairchild Semiconductor Corporation FJI5603D Rev. A3 Remarks www.fairchildsemi.com 1 FJI5603D — NPN Silicon Transistor June 2008 Symbol Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage IC=0.5mA, IE=0 1600 1689 V BVCEO Collector-Emitter Breakdown Voltage IC=5mA, IB=0 800 870 V BVEBO Emitter-Base Breakdown Voltage IE=0.5mA, IC=0 12 14.8 V ICES Collector Cut-off Current VCES=1600V, IE=0 TC=25°C VCE=800V, VBE=0 TC=25°C ICEO Collector Cut-off Current TC=125°C Emitter Cut-off Current VEB=12V, IC=0 hFE DC Current Gain VCE=3V, IC=0.4A TC=25°C VCE=10V, IC=5mA VBE(sat) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage 100 µA 1000 0.01 TC=125°C IEBO VCE(sat) 0.01 100 µA 1000 0.05 500 20 29 35 TC=125°C 6 15 TC=25°C 20 43 TC=125°C 20 46 µA IC=250mA, IB=25mA TC=25°C 0.5 1.25 V IC=500mA, IB=50mA TC=25°C 1.5 2.5 V IC=1A, IB=0.2A TC=25°C 1.2 2.5 V IC=500mA, IB=50mA TC=25°C 0.74 1.2 V TC=125°C 0.61 1.1 TC=25°C 0.85 1.2 TC=125°C 0.74 1.1 IC=2A, IB=0.4A V Cib Input Capacitance VEB=10V, IC=0, f=1MHz 745 1000 pF Cob Output Capacitance VCB=10V, IE=0, f=1MHz 56 500 pF fT Current Gain Bandwidth Product IC=0.1A,VCE=10V 5 VF Diode Forward Voltage IF=0.4A 0.76 1.2 V IF=1A 0.83 1.5 V MHz * Pulse Test: Pulse Widt=20µs, Duty Cycle≤10% © 2008 Fairchild Semiconductor Corporation FJI5603D Rev. A3 www.fairchildsemi.com 2 FJI5603D — NPN Silicon Transistor Electrical Characteristics* Ta=25°C unless otherwise noted Symbol Parameter Test Condition Min Typ. Max. Units 400 600 ns 2.1 2.3 µs 310 1000 ns 600 1100 ns 1.3 1.5 µs 180 350 ns - 1.2 µs 170 250 ns 180 250 ns - 1.2 µs 140 175 ns 170 200 ns RESISTIVE LOAD SWITCHING (D.C < 10%, Pulse Width=20µs) tON Turn On Time tSTG Storage Time tF Fall Time tON Turn On Time tSTG Storage Time tF Fall Time IC=0.3A, IB1=50mA IB2=150mA VCC=125V RL = 416Ω 1.9 IC=0.5A, IB1=50mA, IB2=250mA VCC=125V, RL = 250Ω INDUCTIVE LOAD SWITCHING (VCC=15V) tSTG Storage Time tF Fall Time tC Cross-over Time tSTG Storage Time tF Fall Time tC Cross-over Time IC=0.3A, IB1=50mAIB2=150mA, Vz=300V, LC=200H IC=0.5A, IB1=50mA, IB2=250mA, Vz=300V, LC=200H © 2008 Fairchild Semiconductor Corporation FJI5603D Rev. A3 0.8 0.8 www.fairchildsemi.com 3 FJI5603D — NPN Silicon Transistor Electrical Characteristics TC=25°C unless otherwise noted 3 VCE=10V 2 100 o TJ=125 C hFE, DC CURRENT GAIN IC[A], COLLECTOR CURRENT 1A 900mA 800mA 700mA 600mA 500mA 400mA 300mA 200mA IB=100mA 1 o TJ=25 C 10 1 0 0 1 2 3 4 5 6 1 7 Figure 1. Static Characteristic 1000 IC=5IB VBE[V], VOLTAGE VCE(sat)(V), VOLTAGE 100 Figure 2. DC current Gain IC=5IB 10 10 IC[mA], COLLECTOR CURRENT VCE[V], COLLECTOR EMITTER VOLTAGE 1 o TJ=125 C 1 o TJ=25 C o TJ=125 C 0.1 o TJ=25 C 0.01 0.1 1 10 100 1000 1 IC(mA), COLLECTOR CURRENT 10 100 1k IC[mA], COLLECTOR CURRENT Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter Saturation Voltage 2 o TJ=25 C 1000 F=1MHz Cib 2.0A CAPACITANCE[pF] VCE[V], VOLTAGE 3.0A 1.0A 1 0.4A IC=0.2A 100 Cob 10 0 1 10 100 1k 1 1 IB[mA], BASE CURRENT 100 Figure 6. Capacitance Figure 5. Typical Collector Saturation Voltage © 2008 Fairchild Semiconductor Corporation FJI5603D Rev. A3 10 REVERSE VOLTAGE[V] www.fairchildsemi.com 4 FJI5603D — NPN Silicon Transistor Typical Characteristics FJI5603D — NPN Silicon Transistor Typical Characteristics (Continued) 5 1000 900 800 700 600 4.5 IC=6IB1=2IB2 VCC=125V PW=20us 500 3 tOFF(us),TIME tON[ns],TIME IC=6IB1=2IB2 VCC=125V PW=20us 4 3.5 400 o TJ=125 C 300 o 2.5 TJ=125 C 2 200 o 100 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 o 1.5 TJ=25 C 2 TJ=25 C 1 0.3 3 0.4 Figure 7. Resistive Switching Time, ton 8 IC=10IB1=5IB2 VCC=125V PW=20us 3 IC=10IB1=5IB2 VCC=125V PW=20us 7 6 o TJ=125 C 5 tOFF(us),TIME 600 tON[ns],TIME 2 10 9 900 700 0.6 0.7 0.8 0.9 1 Figure 8. Resistive Switching Time, toff 1000 800 0.5 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT 500 400 4 o TJ=125 C 3 2 o TJ=25 C 300 200 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 o TJ=25 C 2 1 0.3 3 Figure 9. Resistive Switching Time, ton 0.5 0.6 0.7 0.8 0.9 1 2 3 Figure 10. Resistive Switching Time, toff 6 4 3 0.4 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT IC=6IB1=2IB2 VCC=15V VZ=300V LC=200uH 5 4 IC=10IB1=2IB2 VCC=15V VZ=300V LC=200uH o TJ=125 C tSTG(us),TIME tSTG(us),TIME o TJ=125 C 2 3 o TJ=25 C 2 o TJ=25 C 1 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 2 1 0.3 3 IC[A], COLLECTOR CURRENT 0.5 0.6 0.7 0.8 0.9 1 2 IC[A], COLLECTOR CURRENT Figure 11. Inductive Switching Time, tSTG Figure 12. Inductive Switching Time, tSTG © 2008 Fairchild Semiconductor Corporation FJI5603D Rev. A3 0.4 www.fairchildsemi.com 5 FJI5603D — NPN Silicon Transistor Typical Characteristics (Continued) 400 800 700 IC=6IB1=2IB2 VCC=15V VZ=300V LC=200uH 300 200 IC=10IB1=2IB2 VCC=15V VZ=300V LC=200uH 600 500 o TJ=25 C 400 tF(ns),TIME tF(ns),TIME 300 100 90 80 70 60 o o TJ=25 C 200 TJ=125 C 50 100 90 80 40 30 o TJ=125 C 70 60 20 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 2 50 0.3 3 IC[A], COLLECTOR CURRENT 0.5 0.6 0.7 0.8 0.9 1 2 IC[A], COLLECTOR CURRENT Figure 13. Inductive Switching Time, tF Figure 14. Inductive Switching Time, tF 2000 500 IC=6IB1=2IB2 VCC=15V VZ=300V LC=200uH 400 1000 900 800 700 tC[ns],TIME 300 tC[ns],TIME 0.4 o TJ=25 C 200 IC=10IB1=2IB2 VCC=15V VZ=300V LC=200uH o TJ=125 C 600 500 400 300 o o TJ=125 C 100 0.3 0.4 0.5 TJ=25 C 200 0.6 0.7 0.8 0.9 1 2 100 0.3 3 IC[A], COLLECTOR CURRENT 0.4 0.5 0.6 0.7 0.8 0.9 1 2 IC[A], COLLECTOR CURRENT Figure 15. Inductive Switching Time, tc Figure 16. Inductive Switching Time, tc PC[W], POWER DISSIPATION 100 50 0 0 50 100 150 200 o TC( C), CASE TEMPERATURE Figure 17. Power Derating © 2008 Fairchild Semiconductor Corporation FJI5603D Rev. A3 www.fairchildsemi.com 6 The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. 2. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I31 © 2008 Fairchild Semiconductor Corporation FJI5603D Rev. A3 www.fairchildsemi.com 7 FJI5603D NPN Silicon Transistor TRADEMARKS