Band Switching Diodes MA3X075D, MA3X075E (MA75WA, MA75WK) Silicon epitaxial planar type Unit: mm 0.40+0.10 –0.05 For band switching 0.16+0.10 –0.06 0.4±0.2 2 1 (0.95) (0.95) 1.9±0.1 (0.65) • Low forward dynamic resistance rf • Less voltage dependence of diode capacity CD • Mini type package, allowing downsizing of equipment and automatic insertion through the taping package 5˚ ■ Features 2.8+0.2 –0.3 1.50+0.25 –0.05 3 2.90+0.20 –0.05 Forward current (DC) Symbol Rating Unit VR 35 V IF 100 mA Operating ambient temperature * Topr −25 to +85 °C Storage temperature Tstg −55 to +150 °C Note) *: Maximum ambient temperature during operation 0 to 0.1 Parameter Reverse voltage (DC) 1.1+0.2 –0.1 ■ Absolute Maximum Ratings Ta = 25°C 1.1+0.3 –0.1 10˚ MA3X075D MA3X075E 1 Cathode 1 Anode 1 2 Cathode 2 Anode 2 3 Anode1, 2 Cathode 1, 2 EIAJ: SC-59 Mini3-G1 Package Marking Symbol • MA3X075D: M1X • MA3X075E: M1Y Internal Connection 3 1 D 3 2 1 E 2 ■ Electrical Characteristics Ta = 25°C Parameter Symbol Conditions Min Typ Max Unit Reverse current (DC) IR VR = 33 V 0.01 100 nA Forward voltage (DC) VF IF = 100 mA 0.92 1.0 V Diode capacitance CD VR = 6 V, f = 1 MHz 0.9 1.2 pF IF = 2 mA, f = 100 MHz 0.65 0.85 Ω Forward dynamic resistance * rf Note) 1. Each characteristic is a standard for individual diode 2. Rated input/output frequency: 100 MHz 3. * : Measuring instrument; YHP MODEL 4191A RF IMPEDANCE ANALYZER Note) The part number in the parenthesis shows conventional part number. Publication date: April 2002 SKG00016AED 1 MA3X075D, MA3X075E I F VF 103 CD VR IR T a 102 10 Ta = 25°C VR = 33 V 10 1 3 Reverse current IR (nA) Diode capacitance CD (pF) Forward current IF (mA) 5 102 2 1 0.5 0.3 10 1 10−1 0.2 10−1 0.1 0 0.2 0.4 0.6 0.8 0 1.0 4 8 12 16 20 24 28 32 36 40 Reverse voltage VR (V) Forward voltage VF (V) rf I F 0.8 0.6 0.4 0.2 0 1 3 10 30 Forward current IF (mA) 2 100 IF = 2 mA Ta = 25°C 0.8 0.6 0.4 0.2 0 10 30 100 300 Frequency f (MHz) SKG00016AED 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (°C) rf f 1.0 f = 100 MHz Ta = 25°C Forward dynamic resistance rf (Ω) Forward dynamic resistance rf (Ω) 1.0 10−2 1 000 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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Panasonic is endeavoring to continually improve the quality and reliability of these materials but there is always the possibility that further rectifications will be required in the future. Therefore, Panasonic will not assume any liability for any damages arising from any errors etc. that may appear in this material. C. These materials are solely intended for a customer's individual use. Therefore, without the prior written approval of Panasonic, any other use such as reproducing, selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited. 2001 MAR