Freescale MRF8S21172HR3 Rf power field effect transistor Datasheet

Document Number: MRF8S21172H
Rev. 1, 3/2012
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
MRF8S21172HR3
MRF8S21172HSR3
Designed for W--CDMA and LTE base station applications with frequencies
from 2110 to 2170 MHz. Can be used in Class AB and Class C for all typical
cellular base station modulation formats.
• Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ =
1350 mA, Pout = 42 Watts Avg., IQ Magnitude Clipping, Channel
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF.
Frequency
Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
2110 MHz
17.3
31.6
5.9
--35.8
2140 MHz
17.4
31.0
6.0
--35.9
2170 MHz
17.5
30.6
5.9
--35.0
2110--2170 MHz, 42 W AVG., 28 V
W--CDMA, LTE
LATERAL N--CHANNEL
RF POWER MOSFETs
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 2140 MHz, 193 Watts CW
Output Power (3 dB Input Overdrive from Rated Pout)
• Typical Pout @ 1 dB Compression Point ≃ 132 Watts CW
Features
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source S--Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate--Source Voltage Range for Improved Class C Operation
• Designed for Digital Predistortion Error Correction Systems
• Optimized for Doherty Applications
• In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel.
For R5 Tape and Reel option, see p. 13.
CASE 465--06, STYLE 1
NI--780
MRF8S21172HR3
CASE 465A--06, STYLE 1
NI--780S
MRF8S21172HSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +65
Vdc
Gate--Source Voltage
VGS
--6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
--65 to +150
°C
TC
150
°C
TJ
225
°C
CW
196
0.98
W
W/°C
Symbol
Value (2,3)
Unit
Case Operating Temperature
Operating Junction Temperature
(1,2)
CW Operation @ TC = 25°C
Derate above 25°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 71°C, 42 W CW, 28 Vdc, IDQ = 1350 mA, 2170 MHz
Case Temperature 84°C, 160 W CW(4), 28 Vdc, IDQ = 1350 mA, 2170 MHz
RθJC
0.41
0.41
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
4. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
© Freescale Semiconductor, Inc., 2011--2012. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
MRF8S21172HR3 MRF8S21172HSR3
1
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2
Machine Model (per EIA/JESD22--A115)
A
Charge Device Model (per JESD22--C101)
IV
Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 258 μAdc)
VGS(th)
1.2
2.0
2.7
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 1350 mAdc)
VGS(Q)
—
2.7
—
Vdc
Fixture Gate Quiescent Voltage (1)
(VDD = 28 Vdc, ID = 1350 mAdc, Measured in Functional Test)
VGG(Q)
4.5
5.4
6.0
Vdc
Drain--Source On--Voltage
(VGS = 10 Vdc, ID = 2.5 Adc)
VDS(on)
0.1
0.24
0.3
Vdc
Characteristic
Off Characteristics
On Characteristics
Functional Tests (2) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1350 mA, Pout = 42 W Avg., f = 2170 MHz,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Power Gain
Gps
16.5
17.5
19.5
dB
Drain Efficiency
ηD
29.2
30.6
—
%
PAR
5.6
5.9
—
dB
ACPR
—
--35.0
--33.2
dBc
IRL
—
--13
--8
dB
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
Typical Broadband Performance (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1350 mA, Pout = 42 W Avg.,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Frequency
Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
2110 MHz
17.3
31.6
5.9
--35.8
--14
2140 MHz
17.4
31.0
6.0
--35.9
--14
2170 MHz
17.5
30.6
5.9
--35.0
--13
1. VGG = 2 x VGS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit
schematic.
2. Part internally matched both on input and output.
(continued)
MRF8S21172HR3 MRF8S21172HSR3
2
RF Device Data
Freescale Semiconductor, Inc.
Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1350 mA, 2110--2170 MHz Bandwidth
Pout @ 1 dB Compression Point, CW
P1dB
—
132
—
—
20
—
W
IMD Symmetry @ 104 W PEP, Pout where IMD Third Order
Intermodulation  30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
IMDsym
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBWres
—
58
—
MHz
Gain Flatness in 60 MHz Bandwidth @ Pout = 42 W Avg.
GF
—
0.25
—
dB
Gain Variation over Temperature
(--30°C to +85°C)
∆G
—
0.017
—
dB/°C
∆P1dB
—
0.003
—
dB/°C
Output Power Variation over Temperature
(--30°C to +85°C)
MHz
MRF8S21172HR3 MRF8S21172HSR3
RF Device Data
Freescale Semiconductor, Inc.
3
R1
C10 C11
C16
C20
C24
C9
R2
C8
C4 C5
R3
C28 C2
C21
C12
C31
C26
C3
C1
C30
C29
C32
C13
C18
R4
MRF8S21172
Rev. 0
C27
C19
C22
C14 C15
C17
C6
C7
C23
C25
Figure 1. MRF8S21172HR3(HSR3) Test Circuit Component Layout
Table 5. MRF8S21172HR3(HSR3) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C5, C7, C11, C15, C16,
C17, C26, C27
68 pF Chip Capacitors
ATC800B680JT500XT
ATC
C2
1.3 pF Chip Capacitor
ATC800B1R3BT500XT
ATC
C3
1.5 pF Chip Capacitor
ATC800B1R5BT500XT
ATC
C4, C6, C10, C12, C13, C14
0.8 pF Chip Capacitors
ATC800B0R8BT500XT
ATC
C8, C9, C20, C21, C22, C23
10 μF, 50 V Chip Capacitors
GRM55DR61H106KA88L
Murata
C18, C19
1.1 pF Chip Capacitors
ATC800B1R1BT500XT
ATC
C24, C25
330 μF, 63 V Electrolytic Capacitors
MCRH63V337M13X21--RH
Multicomp
C28, C29
0.9 pF Chip Capacitors
ATC800B0R9BT500XT
ATC
C30
0.6 pF Chip Capacitor
ATC800B0R6BT500XT
ATC
C31, C32
0.5 pF Chip Capacitors
ATC800B0R5BT500XT
ATC
R1, R2
2 kΩ, 1/4 W Chip Resistors
CRCW12062K00FKEA
Vishay
R3, R4
2.37 Ω, 1/4 W Chip Resistors
CRCW12062R37FNEA
Vishay
PCB
0.030″, εr = 3.55
RF--35A2
Taconic
MRF8S21172HR3 MRF8S21172HSR3
4
RF Device Data
Freescale Semiconductor, Inc.
Gps
17.6
17.4
31
Input Signal PAR = 7.5 dB
@ 0.01% Probability on CCDF
17.5
PARC
17.3
17.2
17
2060
2080
2100
2120
--10
--32
--11
--33
--34
IRL
17.1 ACPR
--31
--35
2140
2160
2180
2200
--36
2220
--12
--13
--14
--15
--1.4
--1.6
--1.8
--2
--2.2
PARC (dB)
Gps, POWER GAIN (dB)
17.8
17.7
IRL, INPUT RETURN LOSS (dB)
35
VDD = 28 Vdc, Pout = 42 W (Avg.), IDQ = 1350 mA
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth 34
33
ηD
32
17.9
ACPR (dBc)
18
ηD, DRAIN
EFFICIENCY (%)
TYPICAL CHARACTERISTICS
--2.4
f, FREQUENCY (MHz)
IMD, INTERMODULATION DISTORTION (dBc)
Figure 2. Output Peak--to--Average Ratio Compression (PARC)
Broadband Performance @ Pout = 42 Watts Avg.
--10
VDD = 28 Vdc, Pout = 104 W (PEP), IDQ = 1350 mA
Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 2140 MHz
--20
IM3--U
--30
IM3--L
IM5--U
--40
IM5--L
IM7--L
--50
IM7--U
--60
1
10
100
TWO--TONE SPACING (MHz)
18
0
17.5
17
16.5
16
15.5
VDD = 28 Vdc, IDQ = 1350 mA, f = 2140 MHz
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
ACPR
Gps
--1
ηD
--1 dB = 35 W
--2
44
--20
40
--25
36
32
PARC
--2 dB = 49 W
--3
28
--3 dB = 65 W
--4
20
30
40
50
60
--35
--40
24
--45
20
--50
Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF
--5
--30
ACPR (dBc)
1
ηD, DRAIN EFFICIENCY (%)
18.5
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
Gps, POWER GAIN (dB)
Figure 3. Intermodulation Distortion Products
versus Two--Tone Spacing
70
Pout, OUTPUT POWER (WATTS)
Figure 4. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
MRF8S21172HR3 MRF8S21172HSR3
RF Device Data
Freescale Semiconductor, Inc.
5
TYPICAL CHARACTERISTICS
22
50
--10
40
ACPR
VDD = 28 Vdc, IDQ = 1350 mA, Single--Carrier
W--CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB
14 @ 0.01% Probability on CCDF
16
30
2110 MHz
2140 MHz
20
10
--20
--30
--40
ACPR (dBc)
2170 MHz
2140 MHz
12
0
ηD, DRAIN EFFICIENCY (%)
Gps, POWER GAIN (dB)
Gps
18
2110 MHz
2140 MHz
2170 MHz
2110 MHz
20
60
ηD
--50
2170 MHz
10
1
10
100
0
200
--60
Pout, OUTPUT POWER (WATTS) AVG.
Figure 5. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
0
24
--3
Gain
16
--6
12
--9
IRL
8
--12
VDD = 28 Vdc
Pin = 0 dBm
IDQ = 1350 mA
4
0
1700
1800
1900
2000
IRL (dB)
GAIN (dB)
20
--15
2100
2200
2300
2400
--18
2500
f, FREQUENCY (MHz)
Figure 6. Broadband Frequency Response
W--CDMA TEST SIGNAL
100
10
0
--10
Input Signal
--30
0.1
0.01
W--CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
0.001
0.0001
3.84 MHz
Channel BW
--20
1
(dB)
PROBABILITY (%)
10
0
1
2
3
4
5
6
--40
--50
--60
+ACPR in 3.84 MHz
Integrated BW
--ACPR in 3.84 MHz
Integrated BW
--70
--80
7
8
9
PEAK--TO--AVERAGE (dB)
Figure 7. CCDF W--CDMA IQ Magnitude
Clipping, Single--Carrier Test Signal
10
--90
--100
--9
--7.2 --5.4
--3.6 --1.8
0
1.8
3.6
5.4
7.2
9
f, FREQUENCY (MHz)
Figure 8. Single--Carrier W--CDMA Spectrum
MRF8S21172HR3 MRF8S21172HSR3
6
RF Device Data
Freescale Semiconductor, Inc.
VDD = 28 Vdc, IDQ = 1350 mA, Pout = 42 W Avg.
f
MHz
Zsource
Ω
Zload
Ω
2060
7.06 -- j2.80
0.74 -- j2.83
2080
6.94 -- j2.81
0.84 -- j3.41
2100
6.79 -- j2.83
0.96 -- j4.04
2120
6.65 -- j2.84
1.08 -- j4.72
2140
6.50 -- j2.84
1.23 -- j5.42
2160
6.35 -- j2.86
1.44 -- j6.17
2180
6.19 -- j2.88
1.73 -- j6.99
2200
6.02 -- j2.90
2.13 -- j7.91
2220
5.84 -- j2.92
2.66 -- j8.95
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured from
drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 9. Series Equivalent Source and Load Impedance
MRF8S21172HR3 MRF8S21172HSR3
RF Device Data
Freescale Semiconductor, Inc.
7
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
VDD = 28 Vdc, IDQ = 1350 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle
Max Output Power
P1dB
P3dB
f
(MHz)
Zsource
(Ω)
Zload (1)
(Ω)
(dBm)
(W)
ηD (%)
(dBm)
(W)
ηD (%)
2110
5.81 -- j7.39
1.52 -- j3.75
52.9
195
50.3
53.7
234
50.9
2140
7.36 -- j5.98
1.60 -- j3.97
52.8
191
49.0
53.7
234
50.7
2170
9.91 -- j3.25
1.43 -- j4.22
52.8
191
49.1
53.7
234
51.1
(1) Load impedance for optimum P1dB power.
Zsource = Impedance as measured from gate contact to ground.
Zload = Impedance as measured from drain contact to ground.
Input
Load Pull
Tuner
Output
Load Pull
Tuner
Device
Under
Test
Z
source
Z
load
Figure 10. Load Pull Performance — Maximum P1dB Tuning
VDD = 28 Vdc, IDQ = 1350 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle
Max Drain Efficiency
P1dB
P3dB
f
(MHz)
Zsource
(Ω)
Zload (1)
(Ω)
(dBm)
(W)
ηD (%)
(dBm)
(W)
ηD (%)
2110
5.81 -- j7.39
3.31 -- j2.75
51.4
138
57.9
52.1
162
60.6
2140
7.36 -- j5.98
3.06 -- j2.54
51.7
148
57.6
52.2
166
60.4
2170
9.91 -- j3.25
2.96 -- j2.98
51.8
151
57.0
52.4
174
60.4
(1) Load impedance for optimum P1dB efficiency.
Zsource = Impedance as measured from gate contact to ground.
Zload = Impedance as measured from drain contact to ground.
Input
Load Pull
Tuner
Output
Load Pull
Tuner
Device
Under
Test
Z
source
Z
load
Figure 11. Load Pull Performance — Maximum Efficiency Tuning
MRF8S21172HR3 MRF8S21172HSR3
8
RF Device Data
Freescale Semiconductor, Inc.
PACKAGE DIMENSIONS
MRF8S21172HR3 MRF8S21172HSR3
RF Device Data
Freescale Semiconductor, Inc.
9
MRF8S21172HR3 MRF8S21172HSR3
10
RF Device Data
Freescale Semiconductor, Inc.
MRF8S21172HR3 MRF8S21172HSR3
RF Device Data
Freescale Semiconductor, Inc.
11
MRF8S21172HR3 MRF8S21172HSR3
12
RF Device Data
Freescale Semiconductor, Inc.
PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following documents and software to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
• Electromigration MTTF Calculator
• RF High Power Model
• .s2p File
For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software &
Tools tab on the part’s Product Summary page to download the respective tool.
R5 TAPE AND REEL OPTION
R5 Suffix = 50 Units, 56 mm Tape Width, 13 inch Reel.
The R5 tape and reel option for MRF8S21172H and MRF8S21172HS parts will be available for 2 years after release of
MRF8S21172H and MRF8S21172HS. Freescale Semiconductor, Inc. reserves the right to limit the quantities that will be
delivered in the R5 tape and reel option. At the end of the 2 year period customers who have purchased these devices in the
R5 tape and reel option will be offered MRF8S21172H and MRF8S21172HS in the R3 tape and reel option.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Mar. 2011
• Initial Release of Data Sheet
1
Mar. 2012
• Table 3, ESD Protection Characteristics, removed the word “Minimum” after the ESD class rating. ESD
ratings are characterized during new product development but are not 100% tested during production. ESD
ratings provided in the data sheet are intended to be used as a guideline when handling ESD sensitive
devices, p. 2
• Typical Single--Carrier W--CDMA Performance table: drain efficiency typical values lowered by 1% point for
all frequencies due to manufacturing capability, p. 1
• Functional Test table: changed drain efficiency minimum test limit from 30.4% to 29.2% due to
manufacturing capability, p. 2
• Typical Broadband Performance table: drain efficiency typical values lowered by 1% point for all
frequencies due to manufacturing capability p. 2
MRF8S21172HR3 MRF8S21172HSR3
RF Device Data
Freescale Semiconductor, Inc.
13
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MRF8S21172HR3 MRF8S21172HSR3
Document Number: MRF8S21172H
Rev. 1, 3/2012
14
RF Device Data
Freescale Semiconductor, Inc.