Spec. No. : C306Y3 Issued Date : 2011.11.03 Revised Date : 2011.11.04 Page No. : 1/7 CYStech Electronics Corp. General Purpose PNP Epitaxial Planar Transistor BTA2029Y3 Description • The BTA2029Y3 is designed for use in driver stage of AF amplifier and general purpose amplification. • High HFE and excellent linearity • Complementary to BTC5658Y3. • Pb-free package Symbol Outline BTA2029Y3 SOT-723 C B：Base C：Collector E：Emitter E B Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature BTA2029Y3 Symbol Limits Unit VCBO VCEO VEBO IC Pd RθJA Tj Tstg -60 -50 -6 -150 150 833.3 150 -55~+150 V V V mA mW °C/W °C °C CYStek Product Specification CYStech Electronics Corp. Spec. No. : C306Y3 Issued Date : 2011.11.03 Revised Date : 2011.11.04 Page No. : 2/7 Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) hFE fT Cob Min. -60 -50 -6 180 - Typ. 140 4 Max. -0.1 -0.1 -0.5 560 5 Unit V V V μA μA V MHz pF Test Conditions IC=-50μA IC=-1mA IE=-50μA VCB=-60V VEB=-6V IC=-50mA, IB=-5mA VCE=-6V, IC=-1mA VCE=-12V, IC=-2mA, f=30MHz VCB=-12V, IE=0, f=1MHz *Pulse Test: Pulse Width ≤380μs, Duty Cycle≤2% Marking Code and Classification of hFE Rank R S hFE Range 180-390 270-560 Marking FR FS Ordering Information Device BTA2029Y3 BTA2029Y3 Package SOT-723 (Pb-free) Shipping 8000 pcs / Tape & Reel CYStek Product Specification Spec. No. : C306Y3 Issued Date : 2011.11.03 Revised Date : 2011.11.04 Page No. : 3/7 CYStech Electronics Corp. Typical Characteristics Emitter Grounded Output Characteristics Emitter Grounded Output Characteristics 0.25 0.16 5mA 1mA -IC, Collector Current(A) Collector Current---IC(A) 0.14 0.12 0.1 500uA 0.08 400uA 300uA 0.06 200uA 0.04 -IB=100uA 0.02 0.2 2.5mA 2mA 0.15 1.5mA 0.1 -IB=500uA 0.05 0 0 0 1 2 3 4 5 -VCE, Collector-to-Emitter Voltage(V) 6 0 Current Gain vs Collector Current 6 Saturation Voltage vs Collector Current 1000 1000 25°C 100 VCESAT@IC=10IB VCE=-6V Saturation Voltage---(mV) 150°C Current Gain---HFE 1 2 3 4 5 -VCE, Collector-to-Emitter Voltage(V) -55°C 150°C 100 25°C -55°C 10 10 1 10 100 -IC, Collector Current(mA) 1000 1 Saturation Voltage vs Collector Current 1000 On Voltage vs Collector Current 10000 1000 VBESAT@IC=10IB VCE=-6V -IC, Collector Current(mA) Saturation Voltage---(mV) 10 100 -IC, Collector Current(mA) -55°C 1000 150°C 25°C 100 100 150°C -55°C 10 25°C 1 0.1 1 BTA2029Y3 10 100 -IC, Collector Current(mA) 1000 100 200 300 400 500 600 700 800 900 1000 -VBE, Base to Emitter Voltage(mV) CYStek Product Specification CYStech Electronics Corp. Spec. No. : C306Y3 Issued Date : 2011.11.03 Revised Date : 2011.11.04 Page No. : 4/7 Typical Characteristics Capacitance Characteristics Cutoff Frequency vs Collector Current 100 FT@VCE=-12V fT=1MHz Capacitance---(pF) Cutoff Frequency---FT(MHZ) 1000 100 Cib 10 Cob 10 1 0.1 1 10 -IC, Collector Current(mA) 100 0.1 1 10 Reverse-biased Voltage---(V) 100 Power Derating Curve Power Dissipation---PD(mW) 160 140 120 100 80 60 40 20 0 0 BTA2029Y3 50 100 150 Ambient Temperature --- Ta(℃ ) 200 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C306Y3 Issued Date : 2011.11.03 Revised Date : 2011.11.04 Page No. : 5/7 Reel Dimension Carrier Tape Dimension BTA2029Y3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C306Y3 Issued Date : 2011.11.03 Revised Date : 2011.11.04 Page No. : 6/7 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. BTA2029Y3 CYStek Product Specification Spec. No. : C306Y3 Issued Date : 2011.11.03 Revised Date : 2011.11.04 Page No. : 7/7 CYStech Electronics Corp. SOT-723 Dimension Marking: F* Device Code * HFE rank 3-Lead SOT-723 Plastic Surface Mounted Package CYStek Package Code: Y3 Style: Pin 1.Base 2.Emitter 3.Collector *Typical Millimeters Min. Max. 0.000 0.500 0.000 0.050 0.170 0.270 0.270 0.370 0.000 0.150 DIM A A1 b b1 c Inches Min. Max. 0.000 0.020 0.000 0.002 0.007 0.011 0.011 0.015 0.000 0.006 DIM D E E1 e θ Millimeters Min. Max. 1.150 1.250 1.150 1.250 0.750 0.850 0.800* 7° REF Inches Min. Max. 0.045 0.049 0.045 0.049 0.030 0.033 0.031* 7° REF Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTA2029Y3 CYStek Product Specification